DE102005026947A1 - Halbleiter-Leuchtvorrichtung und zugehöriges Herstellungsverfahren - Google Patents
Halbleiter-Leuchtvorrichtung und zugehöriges Herstellungsverfahren Download PDFInfo
- Publication number
- DE102005026947A1 DE102005026947A1 DE102005026947A DE102005026947A DE102005026947A1 DE 102005026947 A1 DE102005026947 A1 DE 102005026947A1 DE 102005026947 A DE102005026947 A DE 102005026947A DE 102005026947 A DE102005026947 A DE 102005026947A DE 102005026947 A1 DE102005026947 A1 DE 102005026947A1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- semiconductor layer
- layer
- semiconductor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004180915A JP4632697B2 (ja) | 2004-06-18 | 2004-06-18 | 半導体発光素子及びその製造方法 |
| JP2004-180915 | 2004-06-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102005026947A1 true DE102005026947A1 (de) | 2006-02-02 |
Family
ID=35480521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102005026947A Ceased DE102005026947A1 (de) | 2004-06-18 | 2005-06-10 | Halbleiter-Leuchtvorrichtung und zugehöriges Herstellungsverfahren |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7411220B2 (https=) |
| JP (1) | JP4632697B2 (https=) |
| DE (1) | DE102005026947A1 (https=) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2628887C (en) * | 2000-04-05 | 2013-06-11 | Sord Technologies Limited | Apparatus for assembling a liner |
| US20060108672A1 (en) * | 2004-11-24 | 2006-05-25 | Brennan John M | Die bonded device and method for transistor packages |
| JP4777757B2 (ja) * | 2005-12-01 | 2011-09-21 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
| JP4862386B2 (ja) * | 2005-12-15 | 2012-01-25 | ソニー株式会社 | 半導体発光ダイオード |
| TW200834958A (en) * | 2007-02-06 | 2008-08-16 | Chen Guei Fang | Light-emitting diode assembly, method of making the same and substrate thereof |
| US7816155B2 (en) * | 2007-07-06 | 2010-10-19 | Jds Uniphase Corporation | Mounted semiconductor device and a method for making the same |
| EP2206164A2 (en) * | 2007-10-08 | 2010-07-14 | 3M Innovative Properties Company | Light emitting diode with bonded semiconductor wavelength converter |
| US8916890B2 (en) * | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
| US9293656B2 (en) * | 2012-11-02 | 2016-03-22 | Epistar Corporation | Light emitting device |
| US8716723B2 (en) | 2008-08-18 | 2014-05-06 | Tsmc Solid State Lighting Ltd. | Reflective layer between light-emitting diodes |
| KR101020910B1 (ko) | 2008-12-24 | 2011-03-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| DE102009023849B4 (de) * | 2009-06-04 | 2022-10-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip |
| KR100999798B1 (ko) | 2010-02-11 | 2010-12-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| CN101872824A (zh) * | 2010-06-07 | 2010-10-27 | 厦门市三安光电科技有限公司 | 侧面具有双反射层的氮化镓基倒装发光二极管及其制备方法 |
| KR101252032B1 (ko) | 2010-07-08 | 2013-04-10 | 삼성전자주식회사 | 반도체 발광소자 및 이의 제조방법 |
| KR101650518B1 (ko) * | 2010-09-13 | 2016-08-23 | 에피스타 코포레이션 | 발광 구조체 |
| JP5508539B2 (ja) * | 2010-09-30 | 2014-06-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
| JP5517882B2 (ja) * | 2010-10-20 | 2014-06-11 | シャープ株式会社 | 窒化物半導体発光素子 |
| DE102011010504A1 (de) * | 2011-02-07 | 2012-08-09 | Osram Opto Semiconductors Gmbh | Optoelektrischer Halbleiterchip |
| CN102270714B (zh) * | 2011-08-24 | 2013-11-27 | 上海蓝光科技有限公司 | 发光二极管芯片的制备方法 |
| JP5869678B2 (ja) | 2011-09-16 | 2016-02-24 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 発光ダイオード及びそれを製造する方法 |
| EP2605295A3 (en) * | 2011-12-13 | 2015-11-11 | LG Innotek Co., Ltd. | Ultraviolet light emitting device |
| KR101961825B1 (ko) * | 2011-12-13 | 2019-03-25 | 엘지이노텍 주식회사 | 자외선 발광 소자 |
| JP5609925B2 (ja) | 2012-07-09 | 2014-10-22 | 日亜化学工業株式会社 | 発光装置 |
| KR101420787B1 (ko) | 2012-12-04 | 2014-07-18 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이를 제조하는 방법 |
| US9691944B2 (en) | 2012-12-04 | 2017-06-27 | Semicon Light Co., Ltd. | Semiconductor light-emitting device and method for manufacturing the same |
| KR101420789B1 (ko) | 2012-12-05 | 2014-07-18 | 주식회사 세미콘라이트 | 반도체 발광소자 |
| KR101420788B1 (ko) | 2012-12-05 | 2014-07-18 | 주식회사 세미콘라이트 | 반도체 발광소자 |
| JP6082653B2 (ja) * | 2013-05-16 | 2017-02-15 | スタンレー電気株式会社 | 半導体発光装置 |
| US9082926B2 (en) * | 2013-06-18 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor optical emitting device with metallized sidewalls |
| CN110635009B (zh) * | 2013-07-18 | 2023-03-31 | 亮锐控股有限公司 | 高度反射倒装芯片led管芯 |
| CN104465691A (zh) * | 2013-09-16 | 2015-03-25 | 上海蓝光科技有限公司 | 一种高压发光二极管结构及其制造方法 |
| DE102013222160A1 (de) * | 2013-10-31 | 2015-04-30 | Robert Bosch Gmbh | Halbleiterbauelement sowie ein Verfahren zur Erzeugung eines Halbleiterbauelementes in einem eine kristallographische (100)-Orientierung aufweisenden Substrat |
| CN103996773B (zh) * | 2014-06-06 | 2016-09-28 | 厦门市三安光电科技有限公司 | 一种倒装发光二极管结构及其制作方法 |
| JP2016081562A (ja) * | 2014-10-09 | 2016-05-16 | ソニー株式会社 | 表示装置、表示装置の製造方法および電子機器 |
| KR102322841B1 (ko) * | 2014-12-24 | 2021-11-08 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 발광소자 어레이 |
| US9455300B1 (en) | 2015-03-02 | 2016-09-27 | Rayvio Corporation | Pixel array of ultraviolet light emitting devices |
| JP6048528B2 (ja) * | 2015-04-03 | 2016-12-21 | 日亜化学工業株式会社 | 発光装置 |
| KR102377794B1 (ko) * | 2015-07-06 | 2022-03-23 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
| WO2017073759A1 (ja) * | 2015-10-29 | 2017-05-04 | 京セラ株式会社 | 発光素子、受発光素子モジュールおよび光学式センサ |
| KR102422380B1 (ko) * | 2016-01-08 | 2022-07-20 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
| JP2017162940A (ja) * | 2016-03-08 | 2017-09-14 | パナソニックIpマネジメント株式会社 | 発光装置及び照明装置 |
| CN106310960A (zh) * | 2016-09-28 | 2017-01-11 | 东莞市联洲知识产权运营管理有限公司 | 一种基于静电纺和自组装的聚赖氨酸纳滤膜及其制备方法 |
| JP6776855B2 (ja) | 2016-12-06 | 2020-10-28 | 日亜化学工業株式会社 | 発光装置 |
| JP6366799B1 (ja) * | 2017-02-10 | 2018-08-01 | ルーメンス カンパニー リミテッド | マイクロledモジュール及びその製造方法 |
| DE102017107198A1 (de) * | 2017-04-04 | 2018-10-04 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchip und optoelektronischer Halbleiterchip |
| JP6895348B2 (ja) * | 2017-08-31 | 2021-06-30 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子 |
| EP4701377A2 (en) * | 2017-09-28 | 2026-02-25 | Seoul Viosys Co., Ltd | Light emitting diode chip |
| US10418510B1 (en) * | 2017-12-22 | 2019-09-17 | Facebook Technologies, Llc | Mesa shaped micro light emitting diode with electroless plated N-contact |
| KR102656815B1 (ko) * | 2017-12-27 | 2024-04-15 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
| US11075321B2 (en) | 2017-12-27 | 2021-07-27 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device |
| JP6822429B2 (ja) * | 2018-02-19 | 2021-01-27 | 日亜化学工業株式会社 | 発光素子 |
| JP2019192731A (ja) * | 2018-04-23 | 2019-10-31 | 旭化成株式会社 | 窒化物半導体装置、窒化物半導体装置の製造方法 |
| JP7348520B2 (ja) | 2018-12-25 | 2023-09-21 | 日亜化学工業株式会社 | 発光装置及び表示装置 |
| US11387392B2 (en) | 2018-12-25 | 2022-07-12 | Nichia Corporation | Light-emitting device and display device |
| CN110379903B (zh) * | 2019-07-30 | 2021-01-19 | 华中科技大学鄂州工业技术研究院 | 全空间odr深紫外高光效二极管芯片及其制作工艺 |
| US11515452B2 (en) * | 2019-09-09 | 2022-11-29 | Chongqing Konka Photoelectric Technology Research | LED chip, LED array and LED packaging method |
| WO2021153561A1 (ja) * | 2020-01-31 | 2021-08-05 | 日亜化学工業株式会社 | 面状光源 |
| JP6924958B1 (ja) * | 2020-01-31 | 2021-08-25 | 日亜化学工業株式会社 | 面状光源 |
| JPWO2023210082A1 (https=) * | 2022-04-26 | 2023-11-02 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3892900A (en) * | 1972-11-02 | 1975-07-01 | Daicel Ltd | Masking films |
| JPH0738153A (ja) * | 1993-07-20 | 1995-02-07 | Sharp Corp | 半導体発光素子並びに光ファイバモジュール装置および半導体発光素子ディスプレイ装置 |
| DE59713024D1 (de) | 1996-06-26 | 2010-01-28 | Osram Opto Semiconductors Gmbh | Lichtabstrahlender Halbleiterchip und Lichtabstrahlendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
| DE19638667C2 (de) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
| US6613247B1 (en) | 1996-09-20 | 2003-09-02 | Osram Opto Semiconductors Gmbh | Wavelength-converting casting composition and white light-emitting semiconductor component |
| JP3065263B2 (ja) | 1996-12-27 | 2000-07-17 | 日亜化学工業株式会社 | 発光装置及びそれを用いたled表示器 |
| JP3540605B2 (ja) | 1998-05-15 | 2004-07-07 | 三洋電機株式会社 | 発光素子 |
| CN1190997C (zh) | 1999-07-23 | 2005-02-23 | 电灯专利信托有限公司 | 光源的发光物质及其相关的光源 |
| JP2001127346A (ja) | 1999-10-22 | 2001-05-11 | Stanley Electric Co Ltd | 発光ダイオード |
| JP2001196639A (ja) | 2000-01-12 | 2001-07-19 | Sanyo Electric Co Ltd | Led発光素子及びその製造方法 |
| JP2001210872A (ja) | 2000-01-26 | 2001-08-03 | Sanyo Electric Co Ltd | 半導体発光装置及びその製造方法 |
| JP2001345483A (ja) | 2000-05-31 | 2001-12-14 | Toshiba Lighting & Technology Corp | 発光ダイオード |
| JP2002026384A (ja) * | 2000-07-05 | 2002-01-25 | Nichia Chem Ind Ltd | 集積型窒化物半導体発光素子 |
| US7053413B2 (en) * | 2000-10-23 | 2006-05-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
| JP2002246647A (ja) * | 2001-02-16 | 2002-08-30 | Stanley Electric Co Ltd | 波長変換型半導体素子 |
| US6630689B2 (en) | 2001-05-09 | 2003-10-07 | Lumileds Lighting, U.S. Llc | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
| US6455878B1 (en) * | 2001-05-15 | 2002-09-24 | Lumileds Lighting U.S., Llc | Semiconductor LED flip-chip having low refractive index underfill |
| JP4123830B2 (ja) * | 2002-05-28 | 2008-07-23 | 松下電工株式会社 | Ledチップ |
| JP3707688B2 (ja) | 2002-05-31 | 2005-10-19 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
| JP3485182B1 (ja) * | 2002-06-28 | 2004-01-13 | 東京応化工業株式会社 | パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法 |
| JP2004047748A (ja) | 2002-07-12 | 2004-02-12 | Stanley Electric Co Ltd | 発光ダイオード |
| JP2004056034A (ja) * | 2002-07-24 | 2004-02-19 | Sony Corp | 半導体発光素子及び半導体発光素子の製造方法 |
| KR101095753B1 (ko) * | 2002-08-01 | 2011-12-21 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치 |
| JP4252297B2 (ja) * | 2002-12-12 | 2009-04-08 | 株式会社日立製作所 | 発光素子およびこの発光素子を用いた表示装置 |
| GB0302580D0 (en) * | 2003-02-05 | 2003-03-12 | Univ Strathclyde | MICRO LEDs |
-
2004
- 2004-06-18 JP JP2004180915A patent/JP4632697B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-10 DE DE102005026947A patent/DE102005026947A1/de not_active Ceased
- 2005-06-17 US US11/154,814 patent/US7411220B2/en active Active
-
2008
- 2008-02-14 US US12/031,068 patent/US7595206B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4632697B2 (ja) | 2011-02-16 |
| US7595206B2 (en) | 2009-09-29 |
| US20080145961A1 (en) | 2008-06-19 |
| US20050281303A1 (en) | 2005-12-22 |
| US7411220B2 (en) | 2008-08-12 |
| JP2006005215A (ja) | 2006-01-05 |
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| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed |
Effective date: 20120509 |
|
| R002 | Refusal decision in examination/registration proceedings | ||
| R003 | Refusal decision now final |