JPWO2023210082A1 - - Google Patents
Info
- Publication number
- JPWO2023210082A1 JPWO2023210082A1 JP2024517839A JP2024517839A JPWO2023210082A1 JP WO2023210082 A1 JPWO2023210082 A1 JP WO2023210082A1 JP 2024517839 A JP2024517839 A JP 2024517839A JP 2024517839 A JP2024517839 A JP 2024517839A JP WO2023210082 A1 JPWO2023210082 A1 JP WO2023210082A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022072564 | 2022-04-26 | ||
| PCT/JP2023/002511 WO2023210082A1 (ja) | 2022-04-26 | 2023-01-26 | 発光素子及び発光装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023210082A1 true JPWO2023210082A1 (https=) | 2023-11-02 |
Family
ID=88518310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024517839A Pending JPWO2023210082A1 (https=) | 2022-04-26 | 2023-01-26 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250113671A1 (https=) |
| JP (1) | JPWO2023210082A1 (https=) |
| CN (1) | CN119156712A (https=) |
| WO (1) | WO2023210082A1 (https=) |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100358163C (zh) * | 2002-08-01 | 2007-12-26 | 日亚化学工业株式会社 | 半导体发光元件及其制造方法、使用此的发光装置 |
| JP4632697B2 (ja) * | 2004-06-18 | 2011-02-16 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
| JP4630629B2 (ja) * | 2004-10-29 | 2011-02-09 | 豊田合成株式会社 | 発光装置の製造方法 |
| JP5223102B2 (ja) * | 2007-08-08 | 2013-06-26 | 豊田合成株式会社 | フリップチップ型発光素子 |
| JP6176032B2 (ja) * | 2013-01-30 | 2017-08-09 | 日亜化学工業株式会社 | 半導体発光素子 |
| KR102222861B1 (ko) * | 2013-07-18 | 2021-03-04 | 루미리즈 홀딩 비.브이. | 고반사성 플립칩 led 다이 |
| TWI597864B (zh) * | 2013-08-27 | 2017-09-01 | 晶元光電股份有限公司 | 具有複數個發光結構之發光元件 |
| JP6326852B2 (ja) * | 2014-02-17 | 2018-05-23 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP6384175B2 (ja) * | 2014-07-25 | 2018-09-05 | 日亜化学工業株式会社 | 半導体発光素子 |
| DE102017205639B4 (de) * | 2016-04-18 | 2025-02-13 | Seoul Viosys Co., Ltd | Lumineszenzdiode mit hoher Effizienz |
| DE112017006432T5 (de) * | 2016-12-21 | 2019-09-05 | Seoul Viosys Co., Ltd | Hochzuverlässige lumineszenzdiode |
| EP3399554B1 (en) * | 2017-03-14 | 2020-05-13 | Seoul Viosys Co., Ltd | Light emitting diode |
-
2023
- 2023-01-26 JP JP2024517839A patent/JPWO2023210082A1/ja active Pending
- 2023-01-26 CN CN202380035979.3A patent/CN119156712A/zh active Pending
- 2023-01-26 US US18/730,830 patent/US20250113671A1/en active Pending
- 2023-01-26 WO PCT/JP2023/002511 patent/WO2023210082A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023210082A1 (ja) | 2023-11-02 |
| CN119156712A (zh) | 2024-12-17 |
| US20250113671A1 (en) | 2025-04-03 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251226 |