CN119156712A - 发光元件以及发光装置 - Google Patents

发光元件以及发光装置 Download PDF

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Publication number
CN119156712A
CN119156712A CN202380035979.3A CN202380035979A CN119156712A CN 119156712 A CN119156712 A CN 119156712A CN 202380035979 A CN202380035979 A CN 202380035979A CN 119156712 A CN119156712 A CN 119156712A
Authority
CN
China
Prior art keywords
light
emitting element
substrate
semiconductor layer
exposed portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380035979.3A
Other languages
English (en)
Chinese (zh)
Inventor
楠濑健
渡边健太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of CN119156712A publication Critical patent/CN119156712A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Landscapes

  • Led Devices (AREA)
CN202380035979.3A 2022-04-26 2023-01-26 发光元件以及发光装置 Pending CN119156712A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022072564 2022-04-26
JP2022-072564 2022-04-26
PCT/JP2023/002511 WO2023210082A1 (ja) 2022-04-26 2023-01-26 発光素子及び発光装置

Publications (1)

Publication Number Publication Date
CN119156712A true CN119156712A (zh) 2024-12-17

Family

ID=88518310

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380035979.3A Pending CN119156712A (zh) 2022-04-26 2023-01-26 发光元件以及发光装置

Country Status (4)

Country Link
US (1) US20250113671A1 (https=)
JP (1) JPWO2023210082A1 (https=)
CN (1) CN119156712A (https=)
WO (1) WO2023210082A1 (https=)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100358163C (zh) * 2002-08-01 2007-12-26 日亚化学工业株式会社 半导体发光元件及其制造方法、使用此的发光装置
JP4632697B2 (ja) * 2004-06-18 2011-02-16 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP4630629B2 (ja) * 2004-10-29 2011-02-09 豊田合成株式会社 発光装置の製造方法
JP5223102B2 (ja) * 2007-08-08 2013-06-26 豊田合成株式会社 フリップチップ型発光素子
JP6176032B2 (ja) * 2013-01-30 2017-08-09 日亜化学工業株式会社 半導体発光素子
KR102222861B1 (ko) * 2013-07-18 2021-03-04 루미리즈 홀딩 비.브이. 고반사성 플립칩 led 다이
TWI597864B (zh) * 2013-08-27 2017-09-01 晶元光電股份有限公司 具有複數個發光結構之發光元件
JP6326852B2 (ja) * 2014-02-17 2018-05-23 日亜化学工業株式会社 半導体発光素子
JP6384175B2 (ja) * 2014-07-25 2018-09-05 日亜化学工業株式会社 半導体発光素子
DE102017205639B4 (de) * 2016-04-18 2025-02-13 Seoul Viosys Co., Ltd Lumineszenzdiode mit hoher Effizienz
DE112017006432T5 (de) * 2016-12-21 2019-09-05 Seoul Viosys Co., Ltd Hochzuverlässige lumineszenzdiode
EP3399554B1 (en) * 2017-03-14 2020-05-13 Seoul Viosys Co., Ltd Light emitting diode

Also Published As

Publication number Publication date
WO2023210082A1 (ja) 2023-11-02
JPWO2023210082A1 (https=) 2023-11-02
US20250113671A1 (en) 2025-04-03

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