DE10196635T1 - Speichermodul und in eine Speicherkomponente eingebaute Selbstprüfung - Google Patents

Speichermodul und in eine Speicherkomponente eingebaute Selbstprüfung

Info

Publication number
DE10196635T1
DE10196635T1 DE10196635T DE10196635T DE10196635T1 DE 10196635 T1 DE10196635 T1 DE 10196635T1 DE 10196635 T DE10196635 T DE 10196635T DE 10196635 T DE10196635 T DE 10196635T DE 10196635 T1 DE10196635 T1 DE 10196635T1
Authority
DE
Germany
Prior art keywords
self
memory
memory module
test built
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10196635T
Other languages
English (en)
Other versions
DE10196635B4 (de
Inventor
John Halbert
Randy Bonella
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of DE10196635T1 publication Critical patent/DE10196635T1/de
Application granted granted Critical
Publication of DE10196635B4 publication Critical patent/DE10196635B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0405—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals comprising complete test loop
DE10196635T 2000-09-18 2001-09-14 Speichermodul und in eine Speicherkomponente eingebaute Selbstprüfung Expired - Fee Related DE10196635B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/664,910 2000-09-18
US09/664,910 US6928593B1 (en) 2000-09-18 2000-09-18 Memory module and memory component built-in self test
PCT/US2001/028774 WO2002025957A2 (en) 2000-09-18 2001-09-14 Memory module and memory component built-in self test

Publications (2)

Publication Number Publication Date
DE10196635T1 true DE10196635T1 (de) 2003-08-21
DE10196635B4 DE10196635B4 (de) 2011-06-16

Family

ID=24667948

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10196635T Expired - Fee Related DE10196635B4 (de) 2000-09-18 2001-09-14 Speichermodul und in eine Speicherkomponente eingebaute Selbstprüfung

Country Status (7)

Country Link
US (1) US6928593B1 (de)
CN (1) CN1319072C (de)
AU (1) AU2001290935A1 (de)
DE (1) DE10196635B4 (de)
HK (1) HK1063264A1 (de)
TW (1) TWI234784B (de)
WO (1) WO2002025957A2 (de)

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DE10317371A1 (de) * 2003-04-15 2004-11-11 Infineon Technologies Ag Daten-Interface-Schaltung und Verfahren zum Testen einer Daten-Interface-Schaltung
US7184916B2 (en) * 2003-05-20 2007-02-27 Cray Inc. Apparatus and method for testing memory cards
US7139957B2 (en) * 2003-06-30 2006-11-21 Intel Corporation Automatic self test of an integrated circuit component via AC I/O loopback
US7194670B2 (en) * 2004-02-13 2007-03-20 International Business Machines Corp. Command multiplier for built-in-self-test
US20050289287A1 (en) * 2004-06-11 2005-12-29 Seung-Man Shin Method and apparatus for interfacing between test system and embedded memory on test mode setting operation
DE102004043051A1 (de) * 2004-09-06 2006-03-30 Infineon Technologies Ag Loop-back-Verfahren zur Vermessung des Interface-Timings von Halbleiterspeichervorrichtungen unter Verwendung des Normal-Mode-Speichers
KR100770749B1 (ko) * 2006-07-11 2007-10-26 삼성전자주식회사 셀프 테스트 기능을 추가한 메모리 컨트롤러 및 이를이용한 방법
EP1927949A1 (de) * 2006-12-01 2008-06-04 Thomson Licensing Verarbeitungselement-Array mit lokalen Registern
US7836372B2 (en) * 2007-06-08 2010-11-16 Apple Inc. Memory controller with loopback test interface
US7721175B2 (en) * 2007-08-21 2010-05-18 Micron Technology, Inc. System, apparatus, and method for memory built-in self testing using microcode sequencers
US8001434B1 (en) 2008-04-14 2011-08-16 Netlist, Inc. Memory board with self-testing capability
US8154901B1 (en) 2008-04-14 2012-04-10 Netlist, Inc. Circuit providing load isolation and noise reduction
US8386867B2 (en) 2009-07-02 2013-02-26 Silicon Image, Inc. Computer memory test structure
IT1397374B1 (it) 2009-12-30 2013-01-10 St Microelectronics Srl Soluzione integrata per l'individuazione dei componenti difettosi in dispositivi di memoria
US8543873B2 (en) * 2010-01-06 2013-09-24 Silicon Image, Inc. Multi-site testing of computer memory devices and serial IO ports
US8345558B2 (en) * 2010-02-02 2013-01-01 Juniper Networks, Inc. Packet-based memory test of a network device
JP2012027734A (ja) * 2010-07-23 2012-02-09 Panasonic Corp メモリコントローラおよびメモリアクセスシステム
CN102013274B (zh) * 2010-11-10 2013-08-07 无锡中星微电子有限公司 一种存储器的自检测电路和方法
US9299400B2 (en) 2012-09-28 2016-03-29 Intel Corporation Distributed row hammer tracking
CN103198001B (zh) * 2013-04-25 2017-02-01 加弘科技咨询(上海)有限公司 能够自测pcie接口的存储系统及测试方法
CN104425040A (zh) * 2013-08-23 2015-03-18 辉达公司 用于测试存储器的方法和系统
US9564245B2 (en) 2013-12-26 2017-02-07 Intel Corporation Integrated circuit defect detection and repair
US9548137B2 (en) 2013-12-26 2017-01-17 Intel Corporation Integrated circuit defect detection and repair
CN103943152B (zh) * 2014-03-31 2017-02-01 西安紫光国芯半导体有限公司 存储器的快速内建自测试系统及方法
CN105070321B (zh) * 2015-08-18 2019-03-08 珠海市一微半导体有限公司 存储器件的快速测试电路及方法
CN107305789B (zh) * 2016-04-21 2020-08-07 北京兆易创新科技股份有限公司 一种非挥发性存储器的自测试方法和装置
US9959185B2 (en) * 2016-04-28 2018-05-01 United Microelectronics Corp. Memory system capable of generating notification signals
TWI776785B (zh) * 2022-04-07 2022-09-01 點序科技股份有限公司 裸晶測試系統及其裸晶測試方法

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US5748640A (en) 1996-09-12 1998-05-05 Advanced Micro Devices Technique for incorporating a built-in self-test (BIST) of a DRAM block with existing functional test vectors for a microprocessor
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JP4310878B2 (ja) 2000-02-10 2009-08-12 ソニー株式会社 バスエミュレーション装置

Also Published As

Publication number Publication date
DE10196635B4 (de) 2011-06-16
CN1475015A (zh) 2004-02-11
WO2002025957A3 (en) 2002-07-11
WO2002025957A2 (en) 2002-03-28
CN1319072C (zh) 2007-05-30
US6928593B1 (en) 2005-08-09
HK1063264A1 (en) 2004-12-17
TWI234784B (en) 2005-06-21
AU2001290935A1 (en) 2002-04-02

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: G11C 29/12 AFI20051017BHDE

R018 Grant decision by examination section/examining division
R020 Patent grant now final

Effective date: 20110917

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee