HK1063264A1 - Memory module and memory component built-in self test and methods thereof - Google Patents

Memory module and memory component built-in self test and methods thereof

Info

Publication number
HK1063264A1
HK1063264A1 HK04105978A HK04105978A HK1063264A1 HK 1063264 A1 HK1063264 A1 HK 1063264A1 HK 04105978 A HK04105978 A HK 04105978A HK 04105978 A HK04105978 A HK 04105978A HK 1063264 A1 HK1063264 A1 HK 1063264A1
Authority
HK
Hong Kong
Prior art keywords
methods
memory
self test
component built
memory module
Prior art date
Application number
HK04105978A
Other languages
English (en)
Inventor
John Halbert
Randy Bonella
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of HK1063264A1 publication Critical patent/HK1063264A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12015—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising clock generation or timing circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0405—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals comprising complete test loop
HK04105978A 2000-09-18 2004-08-10 Memory module and memory component built-in self test and methods thereof HK1063264A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/664,910 US6928593B1 (en) 2000-09-18 2000-09-18 Memory module and memory component built-in self test
PCT/US2001/028774 WO2002025957A2 (en) 2000-09-18 2001-09-14 Memory module and memory component built-in self test

Publications (1)

Publication Number Publication Date
HK1063264A1 true HK1063264A1 (en) 2004-12-17

Family

ID=24667948

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04105978A HK1063264A1 (en) 2000-09-18 2004-08-10 Memory module and memory component built-in self test and methods thereof

Country Status (7)

Country Link
US (1) US6928593B1 (xx)
CN (1) CN1319072C (xx)
AU (1) AU2001290935A1 (xx)
DE (1) DE10196635B4 (xx)
HK (1) HK1063264A1 (xx)
TW (1) TWI234784B (xx)
WO (1) WO2002025957A2 (xx)

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US7836372B2 (en) * 2007-06-08 2010-11-16 Apple Inc. Memory controller with loopback test interface
US7721175B2 (en) * 2007-08-21 2010-05-18 Micron Technology, Inc. System, apparatus, and method for memory built-in self testing using microcode sequencers
US8154901B1 (en) 2008-04-14 2012-04-10 Netlist, Inc. Circuit providing load isolation and noise reduction
US8001434B1 (en) 2008-04-14 2011-08-16 Netlist, Inc. Memory board with self-testing capability
US8386867B2 (en) * 2009-07-02 2013-02-26 Silicon Image, Inc. Computer memory test structure
IT1397374B1 (it) 2009-12-30 2013-01-10 St Microelectronics Srl Soluzione integrata per l'individuazione dei componenti difettosi in dispositivi di memoria
US8543873B2 (en) 2010-01-06 2013-09-24 Silicon Image, Inc. Multi-site testing of computer memory devices and serial IO ports
US8345558B2 (en) * 2010-02-02 2013-01-01 Juniper Networks, Inc. Packet-based memory test of a network device
JP2012027734A (ja) * 2010-07-23 2012-02-09 Panasonic Corp メモリコントローラおよびメモリアクセスシステム
CN102013274B (zh) * 2010-11-10 2013-08-07 无锡中星微电子有限公司 一种存储器的自检测电路和方法
US9299400B2 (en) 2012-09-28 2016-03-29 Intel Corporation Distributed row hammer tracking
CN103198001B (zh) * 2013-04-25 2017-02-01 加弘科技咨询(上海)有限公司 能够自测pcie接口的存储系统及测试方法
CN104425040A (zh) * 2013-08-23 2015-03-18 辉达公司 用于测试存储器的方法和系统
US9564245B2 (en) 2013-12-26 2017-02-07 Intel Corporation Integrated circuit defect detection and repair
US9548137B2 (en) 2013-12-26 2017-01-17 Intel Corporation Integrated circuit defect detection and repair
CN103943152B (zh) * 2014-03-31 2017-02-01 西安紫光国芯半导体有限公司 存储器的快速内建自测试系统及方法
CN105070321B (zh) * 2015-08-18 2019-03-08 珠海市一微半导体有限公司 存储器件的快速测试电路及方法
CN107305789B (zh) * 2016-04-21 2020-08-07 北京兆易创新科技股份有限公司 一种非挥发性存储器的自测试方法和装置
US9959185B2 (en) * 2016-04-28 2018-05-01 United Microelectronics Corp. Memory system capable of generating notification signals
TWI776785B (zh) * 2022-04-07 2022-09-01 點序科技股份有限公司 裸晶測試系統及其裸晶測試方法

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Also Published As

Publication number Publication date
AU2001290935A1 (en) 2002-04-02
TWI234784B (en) 2005-06-21
WO2002025957A3 (en) 2002-07-11
CN1475015A (zh) 2004-02-11
WO2002025957A2 (en) 2002-03-28
US6928593B1 (en) 2005-08-09
DE10196635B4 (de) 2011-06-16
CN1319072C (zh) 2007-05-30
DE10196635T1 (de) 2003-08-21

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20170914