DE60228809D1 - Speicherschaltung mit komprimierter Testfunktion - Google Patents
Speicherschaltung mit komprimierter TestfunktionInfo
- Publication number
- DE60228809D1 DE60228809D1 DE60228809T DE60228809T DE60228809D1 DE 60228809 D1 DE60228809 D1 DE 60228809D1 DE 60228809 T DE60228809 T DE 60228809T DE 60228809 T DE60228809 T DE 60228809T DE 60228809 D1 DE60228809 D1 DE 60228809D1
- Authority
- DE
- Germany
- Prior art keywords
- memory circuit
- test function
- compressed test
- compressed
- function
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/40—Response verification devices using compression techniques
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001363871A JP3874653B2 (ja) | 2001-11-29 | 2001-11-29 | 圧縮テスト機能を有するメモリ回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60228809D1 true DE60228809D1 (de) | 2008-10-23 |
Family
ID=19174137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60228809T Expired - Lifetime DE60228809D1 (de) | 2001-11-29 | 2002-10-21 | Speicherschaltung mit komprimierter Testfunktion |
Country Status (7)
Country | Link |
---|---|
US (1) | US6731553B2 (de) |
EP (1) | EP1316966B1 (de) |
JP (1) | JP3874653B2 (de) |
KR (1) | KR100822980B1 (de) |
CN (1) | CN1252730C (de) |
DE (1) | DE60228809D1 (de) |
TW (1) | TW594777B (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100527535B1 (ko) * | 2003-04-17 | 2005-11-09 | 주식회사 하이닉스반도체 | 입출력 압축 회로 |
KR100541048B1 (ko) * | 2003-06-16 | 2006-01-11 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 테스트 방법 |
JP2005332446A (ja) * | 2004-05-18 | 2005-12-02 | Fujitsu Ltd | 半導体メモリ |
US7308598B2 (en) * | 2004-11-04 | 2007-12-11 | International Business Machines Corporation | Algorithm to encode and compress array redundancy data |
US7420847B2 (en) * | 2004-12-14 | 2008-09-02 | Sandisk Corporation | Multi-state memory having data recovery after program fail |
US7120051B2 (en) * | 2004-12-14 | 2006-10-10 | Sandisk Corporation | Pipelined programming of non-volatile memories using early data |
JP5011818B2 (ja) | 2006-05-19 | 2012-08-29 | 富士通セミコンダクター株式会社 | 半導体記憶装置及びその試験方法 |
US7596729B2 (en) * | 2006-06-30 | 2009-09-29 | Micron Technology, Inc. | Memory device testing system and method using compressed fail data |
JP2008097715A (ja) * | 2006-10-12 | 2008-04-24 | Elpida Memory Inc | 半導体メモリ及びメモリモジュール |
JP5181698B2 (ja) | 2008-01-30 | 2013-04-10 | 富士通セミコンダクター株式会社 | 半導体メモリおよび半導体メモリの製造方法 |
JP2009266317A (ja) | 2008-04-25 | 2009-11-12 | Elpida Memory Inc | 半導体記憶装置、およびデータ縮約テスト方法 |
JP2012038377A (ja) | 2010-08-05 | 2012-02-23 | Elpida Memory Inc | 半導体装置及びその試験方法 |
US8811101B2 (en) * | 2011-02-21 | 2014-08-19 | SK Hynix Inc. | SIP semiconductor system |
US10720197B2 (en) * | 2017-11-21 | 2020-07-21 | Samsung Electronics Co., Ltd. | Memory device for supporting command bus training mode and method of operating the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2974219B2 (ja) * | 1990-08-02 | 1999-11-10 | 三菱電機株式会社 | 半導体記憶装置のテスト回路 |
JPH04328399A (ja) | 1991-04-26 | 1992-11-17 | Nippon Telegr & Teleph Corp <Ntt> | テスト機能を有する半導体メモリ |
JP3753190B2 (ja) * | 1995-04-26 | 2006-03-08 | 三菱電機株式会社 | 半導体装置 |
JP3774500B2 (ja) * | 1995-05-12 | 2006-05-17 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
KR100319887B1 (ko) * | 1999-05-04 | 2002-01-10 | 윤종용 | 프로그래머블 출력핀 지정 수단을 구비하는 반도체 메모리장치 및 이의 테스트 모드시의 독출방법 |
JP3945939B2 (ja) * | 1999-05-31 | 2007-07-18 | 富士通株式会社 | 圧縮テスト可能なメモリ回路 |
US6324087B1 (en) * | 2000-06-08 | 2001-11-27 | Netlogic Microsystems, Inc. | Method and apparatus for partitioning a content addressable memory device |
JP2001297600A (ja) * | 2000-04-11 | 2001-10-26 | Mitsubishi Electric Corp | 半導体集積回路およびそのテスト方法 |
-
2001
- 2001-11-29 JP JP2001363871A patent/JP3874653B2/ja not_active Expired - Fee Related
-
2002
- 2002-10-15 US US10/270,196 patent/US6731553B2/en not_active Expired - Lifetime
- 2002-10-17 TW TW091123963A patent/TW594777B/zh not_active IP Right Cessation
- 2002-10-21 DE DE60228809T patent/DE60228809D1/de not_active Expired - Lifetime
- 2002-10-21 EP EP02257282A patent/EP1316966B1/de not_active Expired - Fee Related
- 2002-10-28 KR KR1020020065765A patent/KR100822980B1/ko active IP Right Grant
- 2002-11-29 CN CNB021543658A patent/CN1252730C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW594777B (en) | 2004-06-21 |
JP3874653B2 (ja) | 2007-01-31 |
KR100822980B1 (ko) | 2008-04-16 |
CN1252730C (zh) | 2006-04-19 |
EP1316966B1 (de) | 2008-09-10 |
EP1316966A3 (de) | 2006-03-22 |
US20030099143A1 (en) | 2003-05-29 |
EP1316966A2 (de) | 2003-06-04 |
US6731553B2 (en) | 2004-05-04 |
KR20030044782A (ko) | 2003-06-09 |
CN1421868A (zh) | 2003-06-04 |
JP2003168299A (ja) | 2003-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP |
|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |