GB0019618D0 - Spin memory device - Google Patents

Spin memory device

Info

Publication number
GB0019618D0
GB0019618D0 GBGB0019618.8A GB0019618A GB0019618D0 GB 0019618 D0 GB0019618 D0 GB 0019618D0 GB 0019618 A GB0019618 A GB 0019618A GB 0019618 D0 GB0019618 D0 GB 0019618D0
Authority
GB
United Kingdom
Prior art keywords
memory device
spin memory
spin
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0019618.8A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Scientific Generics Ltd
Original Assignee
Scientific Generics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Scientific Generics Ltd filed Critical Scientific Generics Ltd
Priority to GBGB0019618.8A priority Critical patent/GB0019618D0/en
Priority to EP00958801A priority patent/EP1328979A1/en
Priority to PCT/GB2000/003416 priority patent/WO2002013276A1/en
Priority to JP2002518535A priority patent/JP2004523097A/en
Priority to AU2000270219A priority patent/AU2000270219A1/en
Publication of GB0019618D0 publication Critical patent/GB0019618D0/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/221—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
GBGB0019618.8A 2000-08-09 2000-08-09 Spin memory device Ceased GB0019618D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GBGB0019618.8A GB0019618D0 (en) 2000-08-09 2000-08-09 Spin memory device
EP00958801A EP1328979A1 (en) 2000-08-09 2000-09-06 A memory device and a memory array
PCT/GB2000/003416 WO2002013276A1 (en) 2000-08-09 2000-09-06 A memory device and a memory array
JP2002518535A JP2004523097A (en) 2000-08-09 2000-09-06 Memory device and memory array
AU2000270219A AU2000270219A1 (en) 2000-08-09 2000-09-06 A memory device and a memory array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0019618.8A GB0019618D0 (en) 2000-08-09 2000-08-09 Spin memory device

Publications (1)

Publication Number Publication Date
GB0019618D0 true GB0019618D0 (en) 2000-09-27

Family

ID=9897321

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0019618.8A Ceased GB0019618D0 (en) 2000-08-09 2000-08-09 Spin memory device

Country Status (5)

Country Link
EP (1) EP1328979A1 (en)
JP (1) JP2004523097A (en)
AU (1) AU2000270219A1 (en)
GB (1) GB0019618D0 (en)
WO (1) WO2002013276A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004516697A (en) * 2000-10-10 2004-06-03 ジェンテク インヴェストメント グループ アーゲー Communication device
US10054400B2 (en) 2016-09-14 2018-08-21 Raytheon Company Robot arm launching system

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6021065A (en) * 1996-09-06 2000-02-01 Nonvolatile Electronics Incorporated Spin dependent tunneling memory
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation

Also Published As

Publication number Publication date
EP1328979A1 (en) 2003-07-23
WO2002013276A1 (en) 2002-02-14
AU2000270219A1 (en) 2002-02-18
JP2004523097A (en) 2004-07-29

Similar Documents

Publication Publication Date Title
GB2366554B (en) Storage device
GB0006142D0 (en) Spin transistor
EP1282133A4 (en) Semiconductor memory
GB2368983B (en) Non-volatile memory device
EP1310963A4 (en) Semiconductor memory device
GB2373906B (en) Semiconductor memory device
EP1293986A4 (en) Semiconductor storage device
EP1324205A4 (en) Memory device
AU147087S (en) Storage device
GB0021302D0 (en) Spin filter device
GB2374963B (en) Allocating memory based on memory device organization
EP1143453A4 (en) Semiconductor memory device
GB2362990B (en) Memory device
GB2354618B (en) Memory devices
GB2354865B (en) Semi-conductor memory device
GB0000354D0 (en) Semiconductor memory device
GB2376781B (en) Memory device
AU145850S (en) Storage device
SG97851A1 (en) Semiconductor memory device
EP1441392A4 (en) Magnetic memory device
GB0019618D0 (en) Spin memory device
GB2362976B (en) Memory device
HK1040480A1 (en) Exhibiting device
GB2371662B (en) Semiconductor memory device
GB2367424B (en) Semiconductor memory device

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)