GB2367424B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
GB2367424B
GB2367424B GB0023792A GB0023792A GB2367424B GB 2367424 B GB2367424 B GB 2367424B GB 0023792 A GB0023792 A GB 0023792A GB 0023792 A GB0023792 A GB 0023792A GB 2367424 B GB2367424 B GB 2367424B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0023792A
Other versions
GB0023792D0 (en
GB2367424A (en
Inventor
Piero Migliorato
Satoshi Inoue
Ichio Yudasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US09/643,773 priority Critical patent/US6580663B1/en
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to GB0023792A priority patent/GB2367424B/en
Publication of GB0023792D0 publication Critical patent/GB0023792D0/en
Priority to US09/965,686 priority patent/US6580633B2/en
Publication of GB2367424A publication Critical patent/GB2367424A/en
Application granted granted Critical
Publication of GB2367424B publication Critical patent/GB2367424B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
GB0023792A 1998-06-15 2000-09-29 Semiconductor memory device Expired - Fee Related GB2367424B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US09/643,773 US6580663B1 (en) 1998-06-15 2000-08-22 Celestial timepiece assembly
GB0023792A GB2367424B (en) 2000-09-29 2000-09-29 Semiconductor memory device
US09/965,686 US6580633B2 (en) 2000-09-28 2001-09-27 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0023792A GB2367424B (en) 2000-09-29 2000-09-29 Semiconductor memory device

Publications (3)

Publication Number Publication Date
GB0023792D0 GB0023792D0 (en) 2000-11-08
GB2367424A GB2367424A (en) 2002-04-03
GB2367424B true GB2367424B (en) 2004-10-27

Family

ID=9900307

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0023792A Expired - Fee Related GB2367424B (en) 1998-06-15 2000-09-29 Semiconductor memory device

Country Status (1)

Country Link
GB (1) GB2367424B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2010097862A1 (en) 2009-02-24 2012-08-30 パナソニック株式会社 Semiconductor memory cell, manufacturing method thereof, and semiconductor memory device
WO2011052179A1 (en) 2009-10-29 2011-05-05 パナソニック株式会社 Method for driving semiconductor storage device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08335645A (en) * 1995-06-08 1996-12-17 Mitsubishi Electric Corp Semiconductor device and its controlling method
JPH11214642A (en) * 1997-12-31 1999-08-06 Samsung Electronics Co Ltd Single transistor cell, manufacture thereof, memory circuit composed of the single transistor cells and drive method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08335645A (en) * 1995-06-08 1996-12-17 Mitsubishi Electric Corp Semiconductor device and its controlling method
US5723885A (en) * 1995-06-08 1998-03-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a ferroelectric film and control method thereof
JPH11214642A (en) * 1997-12-31 1999-08-06 Samsung Electronics Co Ltd Single transistor cell, manufacture thereof, memory circuit composed of the single transistor cells and drive method thereof
US6222756B1 (en) * 1997-12-31 2001-04-24 Samsung Electronics Co., Ltd. Single transistor cell, method for manufacturing the same, memory circuit composed of single transistor cells, and method for driving the same

Also Published As

Publication number Publication date
GB0023792D0 (en) 2000-11-08
GB2367424A (en) 2002-04-03

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20180929