GB2367423B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
GB2367423B
GB2367423B GB0023791A GB0023791A GB2367423B GB 2367423 B GB2367423 B GB 2367423B GB 0023791 A GB0023791 A GB 0023791A GB 0023791 A GB0023791 A GB 0023791A GB 2367423 B GB2367423 B GB 2367423B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0023791A
Other versions
GB0023791D0 (en
GB2367423A (en
Inventor
Piero Migliorato
Satoshi Inoue
Ichio Yudasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US09/643,773 priority Critical patent/US6580663B1/en
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to GB0023791A priority patent/GB2367423B/en
Publication of GB0023791D0 publication Critical patent/GB0023791D0/en
Priority to US09/965,686 priority patent/US6580633B2/en
Publication of GB2367423A publication Critical patent/GB2367423A/en
Application granted granted Critical
Publication of GB2367423B publication Critical patent/GB2367423B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
GB0023791A 1998-06-15 2000-09-28 Semiconductor memory device Expired - Fee Related GB2367423B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US09/643,773 US6580663B1 (en) 1998-06-15 2000-08-22 Celestial timepiece assembly
GB0023791A GB2367423B (en) 2000-09-28 2000-09-28 Semiconductor memory device
US09/965,686 US6580633B2 (en) 2000-09-28 2001-09-27 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0023791A GB2367423B (en) 2000-09-28 2000-09-28 Semiconductor memory device

Publications (3)

Publication Number Publication Date
GB0023791D0 GB0023791D0 (en) 2000-11-08
GB2367423A GB2367423A (en) 2002-04-03
GB2367423B true GB2367423B (en) 2004-10-06

Family

ID=9900306

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0023791A Expired - Fee Related GB2367423B (en) 1998-06-15 2000-09-28 Semiconductor memory device

Country Status (1)

Country Link
GB (1) GB2367423B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196647A (en) * 1992-12-24 1994-07-15 Sharp Corp Nonvolatile semiconductor storage device
JPH0997851A (en) * 1995-07-27 1997-04-08 Sony Corp Non-volatile semiconductor memory device
US5723885A (en) * 1995-06-08 1998-03-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a ferroelectric film and control method thereof
JPH11214642A (en) * 1997-12-31 1999-08-06 Samsung Electronics Co Ltd Single transistor cell, manufacture thereof, memory circuit composed of the single transistor cells and drive method thereof
US6054734A (en) * 1996-07-26 2000-04-25 Sony Corporation Non-volatile memory cell having dual gate electrodes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196647A (en) * 1984-03-21 1985-10-05 Canon Inc Photometric apparatus

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196647A (en) * 1992-12-24 1994-07-15 Sharp Corp Nonvolatile semiconductor storage device
US5446688A (en) * 1992-12-24 1995-08-29 Sharp Kabushiki Kaisha Non-volatile semiconductor memory device
US5723885A (en) * 1995-06-08 1998-03-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a ferroelectric film and control method thereof
JPH0997851A (en) * 1995-07-27 1997-04-08 Sony Corp Non-volatile semiconductor memory device
US6054734A (en) * 1996-07-26 2000-04-25 Sony Corporation Non-volatile memory cell having dual gate electrodes
JPH11214642A (en) * 1997-12-31 1999-08-06 Samsung Electronics Co Ltd Single transistor cell, manufacture thereof, memory circuit composed of the single transistor cells and drive method thereof
US6222756B1 (en) * 1997-12-31 2001-04-24 Samsung Electronics Co., Ltd. Single transistor cell, method for manufacturing the same, memory circuit composed of single transistor cells, and method for driving the same

Also Published As

Publication number Publication date
GB0023791D0 (en) 2000-11-08
GB2367423A (en) 2002-04-03

Similar Documents

Publication Publication Date Title
EP1282133A4 (en) Semiconductor memory
SG99939A1 (en) Semiconductor device
EP1231640A4 (en) Semiconductor device
GB2373634B (en) Semiconductor device
EP1310963A4 (en) Semiconductor memory device
GB2373906B (en) Semiconductor memory device
EP1293986A4 (en) Semiconductor storage device
GB2370916B (en) Semiconductor device
EP1324205A4 (en) Memory device
GB0003302D0 (en) Semiconductor devices
GB2365621B (en) Semiconductor device
EP1143453A4 (en) Semiconductor memory device
GB2368725B (en) Semiconductor memory device and fabrication
GB2342778B (en) Semiconductor memory device
SG109474A1 (en) Semiconductor device
GB2362990B (en) Memory device
GB0000354D0 (en) Semiconductor memory device
GB2354865B (en) Semi-conductor memory device
GB2376781B (en) Memory device
SG97851A1 (en) Semiconductor memory device
EP1209752A4 (en) Semiconductor device
GB2371662B (en) Semiconductor memory device
GB2367424B (en) Semiconductor memory device
GB2362976B (en) Memory device
GB2367423B (en) Semiconductor memory device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20180928