DE602004004253D1 - Gleichzeitiges lesen von und schreiben in verschiedene speicherzellen - Google Patents

Gleichzeitiges lesen von und schreiben in verschiedene speicherzellen

Info

Publication number
DE602004004253D1
DE602004004253D1 DE602004004253T DE602004004253T DE602004004253D1 DE 602004004253 D1 DE602004004253 D1 DE 602004004253D1 DE 602004004253 T DE602004004253 T DE 602004004253T DE 602004004253 T DE602004004253 T DE 602004004253T DE 602004004253 D1 DE602004004253 D1 DE 602004004253D1
Authority
DE
Germany
Prior art keywords
writing
memory cells
different memory
simultaneous reading
simultaneous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004004253T
Other languages
English (en)
Other versions
DE602004004253T2 (de
Inventor
Phan Kim Le
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE602004004253D1 publication Critical patent/DE602004004253D1/de
Application granted granted Critical
Publication of DE602004004253T2 publication Critical patent/DE602004004253T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0076—Write operation performed depending on read result

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
DE602004004253T 2003-03-20 2004-03-17 Gleichzeitiges lesen von und schreiben in verschiedene speicherzellen Expired - Lifetime DE602004004253T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP03100725 2003-03-20
EP03100725 2003-03-20
PCT/IB2004/050274 WO2004084226A1 (en) 2003-03-20 2004-03-17 Simultaneous reading from and writing to different memory cells

Publications (2)

Publication Number Publication Date
DE602004004253D1 true DE602004004253D1 (de) 2007-02-22
DE602004004253T2 DE602004004253T2 (de) 2007-11-15

Family

ID=33016982

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004004253T Expired - Lifetime DE602004004253T2 (de) 2003-03-20 2004-03-17 Gleichzeitiges lesen von und schreiben in verschiedene speicherzellen

Country Status (6)

Country Link
US (1) US7382664B2 (de)
EP (1) EP1609153B1 (de)
JP (1) JP2006523358A (de)
CN (1) CN100541650C (de)
DE (1) DE602004004253T2 (de)
WO (1) WO2004084226A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE378683T1 (de) * 2003-07-22 2007-11-15 Nxp Bv Kompensation einer langen lesezeit einer speichervorrichtung in datenvergleichs- und schreiboperationen
US8314024B2 (en) * 2008-12-19 2012-11-20 Unity Semiconductor Corporation Device fabrication
US7646627B2 (en) * 2006-05-18 2010-01-12 Renesas Technology Corp. Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
US7760542B2 (en) * 2008-04-21 2010-07-20 Seagate Technology Llc Spin-torque memory with unidirectional write scheme
US8233319B2 (en) 2008-07-18 2012-07-31 Seagate Technology Llc Unipolar spin-transfer switching memory unit
US7933146B2 (en) * 2008-10-08 2011-04-26 Seagate Technology Llc Electronic devices utilizing spin torque transfer to flip magnetic orientation
US7933137B2 (en) * 2008-10-08 2011-04-26 Seagate Teachnology Llc Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures
US8055958B2 (en) * 2008-12-11 2011-11-08 Samsung Electronics Co., Ltd. Replacement data storage circuit storing address of defective memory cell
US7965543B2 (en) * 2009-04-30 2011-06-21 Everspin Technologies, Inc. Method for reducing current density in a magnetoelectronic device
US8315081B2 (en) 2010-03-22 2012-11-20 Qualcomm Incorporated Memory cell that includes multiple non-volatile memories
US8284597B2 (en) * 2010-05-06 2012-10-09 Macronix International Co., Ltd. Diode memory
US9196341B2 (en) * 2010-05-12 2015-11-24 Qualcomm Incorporated Memory device having a local current sink
FR2964248B1 (fr) * 2010-09-01 2013-07-19 Commissariat Energie Atomique Dispositif magnetique et procede de lecture et d’ecriture dans un tel dispositif magnetique
US8625336B2 (en) * 2011-02-08 2014-01-07 Crocus Technology Inc. Memory devices with series-interconnected magnetic random access memory cells
EP2751807A4 (de) 2011-09-02 2015-02-18 Hewlett Packard Development Co Vorrichtung zur speicherung von daten und verfahren zum lesen von speicherzellen
KR20140052695A (ko) * 2012-10-25 2014-05-07 삼성전자주식회사 양방향 리드 스킴을 갖는 자기 메모리 장치
US9530822B2 (en) * 2013-04-28 2016-12-27 Alexander Mikhailovich Shukh High density nonvolatile memory
US9312005B2 (en) 2013-09-10 2016-04-12 Micron Technology, Inc. Accessing memory cells in parallel in a cross-point array
GB2527363B (en) * 2014-06-20 2019-06-19 Advanced Risc Mach Ltd Read assist techniques in a memory device
US9792986B2 (en) * 2015-05-29 2017-10-17 Intel Corporation Phase change memory current
US9514796B1 (en) 2015-06-26 2016-12-06 Intel Corporation Magnetic storage cell memory with back hop-prevention
US9614002B1 (en) * 2016-01-21 2017-04-04 Samsung Electronics Co., Ltd. 0T bi-directional memory cell
KR20210126436A (ko) 2020-04-10 2021-10-20 삼성전자주식회사 검증을 포함하는 기입 동작을 위한 메모리 장치 및 그것의 동작 방법
KR20220033146A (ko) * 2020-09-09 2022-03-16 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 데이터 리드 방법
CN117378009A (zh) * 2021-08-22 2024-01-09 华为技术有限公司 一种磁性随机存储器及电子设备
CN114022148B (zh) * 2021-12-24 2022-04-22 杭州趣链科技有限公司 基于区块链的交易冲突检测方法、装置、设备和存储介质
CN116644703B (zh) * 2023-05-29 2023-11-24 合芯科技有限公司 一种位图文件的生成方法及装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672583A (en) * 1983-06-15 1987-06-09 Nec Corporation Dynamic random access memory device provided with test circuit for internal refresh circuit
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
JP4215844B2 (ja) * 1997-11-05 2009-01-28 日本テキサス・インスツルメンツ株式会社 半導体記憶装置
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6687179B2 (en) * 2002-04-10 2004-02-03 Micron Technology, Inc. Method and system for writing data in an MRAM memory device
TW200405338A (en) * 2002-05-22 2004-04-01 Koninkl Philips Electronics Nv MRAM-cell and array-architecture with maximum read-out signal and reduced electro-magnetic interference

Also Published As

Publication number Publication date
WO2004084226A1 (en) 2004-09-30
US7382664B2 (en) 2008-06-03
CN1777956A (zh) 2006-05-24
JP2006523358A (ja) 2006-10-12
CN100541650C (zh) 2009-09-16
US20060209600A1 (en) 2006-09-21
DE602004004253T2 (de) 2007-11-15
EP1609153A1 (de) 2005-12-28
EP1609153B1 (de) 2007-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN