ATE378683T1 - Kompensation einer langen lesezeit einer speichervorrichtung in datenvergleichs- und schreiboperationen - Google Patents

Kompensation einer langen lesezeit einer speichervorrichtung in datenvergleichs- und schreiboperationen

Info

Publication number
ATE378683T1
ATE378683T1 AT04744556T AT04744556T ATE378683T1 AT E378683 T1 ATE378683 T1 AT E378683T1 AT 04744556 T AT04744556 T AT 04744556T AT 04744556 T AT04744556 T AT 04744556T AT E378683 T1 ATE378683 T1 AT E378683T1
Authority
AT
Austria
Prior art keywords
memory
data
write
parallel
memory device
Prior art date
Application number
AT04744556T
Other languages
English (en)
Inventor
Eric Persoon
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE378683T1 publication Critical patent/ATE378683T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2263—Write conditionally, e.g. only if new data and old data differ

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT04744556T 2003-07-22 2004-07-12 Kompensation einer langen lesezeit einer speichervorrichtung in datenvergleichs- und schreiboperationen ATE378683T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03102247 2003-07-22

Publications (1)

Publication Number Publication Date
ATE378683T1 true ATE378683T1 (de) 2007-11-15

Family

ID=34072669

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04744556T ATE378683T1 (de) 2003-07-22 2004-07-12 Kompensation einer langen lesezeit einer speichervorrichtung in datenvergleichs- und schreiboperationen

Country Status (7)

Country Link
US (1) US7263018B2 (de)
EP (1) EP1649468B1 (de)
JP (1) JP2006528398A (de)
CN (1) CN1826658B (de)
AT (1) ATE378683T1 (de)
DE (1) DE602004010134T2 (de)
WO (1) WO2005008675A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4565966B2 (ja) * 2004-10-29 2010-10-20 三洋電機株式会社 メモリ素子
CN100524267C (zh) * 2007-02-15 2009-08-05 威盛电子股份有限公司 数据处理系统及数据处理方法
KR101472797B1 (ko) * 2007-07-16 2014-12-15 삼성전자주식회사 데이터를 읽거나 쓰기 위한 방법 및 장치
EP2564387A1 (de) * 2010-04-26 2013-03-06 Mosaid Technologies Incorporated Schreibschema in einem phasenwechselspeicher
JP5443420B2 (ja) 2011-03-23 2014-03-19 株式会社東芝 半導体記憶装置
US8806263B2 (en) * 2011-08-26 2014-08-12 Micron Technology, Inc. Methods and apparatuses including a global timing generator and local control circuits
US11328222B1 (en) 2019-05-10 2022-05-10 Innovium, Inc. Network switch with integrated gradient aggregation for distributed machine learning
US11099902B1 (en) 2019-05-10 2021-08-24 Innovium, Inc. Parallelized ingress compute architecture for network switches in distributed artificial intelligence and other applications
US10931588B1 (en) * 2019-05-10 2021-02-23 Innovium, Inc. Network switch with integrated compute subsystem for distributed artificial intelligence and other applications
US10931602B1 (en) 2019-05-10 2021-02-23 Innovium, Inc. Egress-based compute architecture for network switches in distributed artificial intelligence and other applications
US11057318B1 (en) 2019-08-27 2021-07-06 Innovium, Inc. Distributed artificial intelligence extension modules for network switches
US11114149B2 (en) 2019-11-13 2021-09-07 Wuxi Petabyte Technologies Co, Ltd. Operation methods of ferroelectric memory
TWI755154B (zh) * 2020-03-03 2022-02-11 美商美光科技公司 基於計數器及錯誤校正碼反饋用於記憶體單元之即時程式化及驗證方法
WO2021176243A1 (en) 2020-03-03 2021-09-10 Micron Technology, Inc. On-the-fly programming and verifying method for memory cells based on counters and ecc feedback
CN113642419B (zh) * 2021-07-23 2024-03-01 上海亘存科技有限责任公司 一种用于目标识别的卷积神经网络及其识别方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3146075B2 (ja) * 1992-10-14 2001-03-12 三菱電機株式会社 多重化メモリ装置
US6052302A (en) * 1999-09-27 2000-04-18 Motorola, Inc. Bit-wise conditional write method and system for an MRAM
JP3701886B2 (ja) * 2001-04-27 2005-10-05 インターナショナル・ビジネス・マシーンズ・コーポレーション 記憶回路ブロック及びアクセス方法
US6545906B1 (en) * 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
JP2003151262A (ja) * 2001-11-15 2003-05-23 Toshiba Corp 磁気ランダムアクセスメモリ
EP1609153B1 (de) * 2003-03-20 2007-01-10 Koninklijke Philips Electronics N.V. Gleichzeitiges lesen von und schreiben in verschiedene speicherzellen

Also Published As

Publication number Publication date
JP2006528398A (ja) 2006-12-14
US7263018B2 (en) 2007-08-28
US20060248258A1 (en) 2006-11-02
EP1649468A1 (de) 2006-04-26
CN1826658B (zh) 2011-06-15
CN1826658A (zh) 2006-08-30
WO2005008675A1 (en) 2005-01-27
DE602004010134D1 (de) 2007-12-27
DE602004010134T2 (de) 2008-09-11
EP1649468B1 (de) 2007-11-14

Similar Documents

Publication Publication Date Title
ATE378683T1 (de) Kompensation einer langen lesezeit einer speichervorrichtung in datenvergleichs- und schreiboperationen
TW200506609A (en) Data storage device, management information updating method in data storage device, and computer program
TW200632916A (en) Scratch pad block
EP2150958A4 (de) Mehrebenen-zellenzugangspuffer mit zweifacher funktion
DK1497730T3 (da) Fremgangsmåde ved lagring af data i et ikke-flygtigt datalager
GB2446355A (en) A controller for non-volatile memories, and methods of operating the memory controller
ATE531048T1 (de) Nicht flüchtiger speicher mit hintergrund- datensperren-caching während leseoperationen und entsprechende verfahren
TW200721016A (en) Memory system and method of writing into nonvolatile semiconductor memory
WO2008132725A3 (en) A method for efficient storage of metadata in flash memory
WO2004059651A3 (en) Nonvolatile memory unit with specific cache
KR950015396A (ko) 반도체 불휘발성 기억장치
TW200732917A (en) Dual mode access for non-volatile storage devices
GB2476536B (en) Modified B+ tree to store nand memory indirection maps
EP1818941A3 (de) Halbleiterspeicher und Datenzugangsverfahren
WO2006064497A3 (en) A method of handling limitations on the order of writing to a non-volatile memory
ATE526666T1 (de) Speicheranordnung mit einem befehl für verzögertes schreiben
ATE476709T1 (de) Speichersteuerung und verfahren zum schreiben in einen speicher
TW200703361A (en) Nonvolatile memory performing verify processing in sequential write
WO2006014395A3 (en) Memory systems and methods
WO2007073538A3 (en) Non-volatile memories and methods with data alignment in a directly mapped file storage system
CN104461750A (zh) 一种NAND flash的访问方法和装置
PT2439680E (pt) Método e dispositivo para leitura e gravação de cartões de memória
TW200729232A (en) Method for page random write and read in the block of flash memory
WO2004029972A3 (en) Reducing the effect of write disturbs in polymer memories
KR950025777A (ko) 반도체메모리장치

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties