DK1497730T3 - Fremgangsmåde ved lagring af data i et ikke-flygtigt datalager - Google Patents

Fremgangsmåde ved lagring af data i et ikke-flygtigt datalager

Info

Publication number
DK1497730T3
DK1497730T3 DK03723535T DK03723535T DK1497730T3 DK 1497730 T3 DK1497730 T3 DK 1497730T3 DK 03723535 T DK03723535 T DK 03723535T DK 03723535 T DK03723535 T DK 03723535T DK 1497730 T3 DK1497730 T3 DK 1497730T3
Authority
DK
Denmark
Prior art keywords
data
memory
identical copies
read
location
Prior art date
Application number
DK03723535T
Other languages
English (en)
Inventor
Christer Karlsson
Lars Sundell Torjussen
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Application granted granted Critical
Publication of DK1497730T3 publication Critical patent/DK1497730T3/da

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/74—Masking faults in memories by using spares or by reconfiguring using duplex memories, i.e. using dual copies
DK03723535T 2002-04-16 2003-04-10 Fremgangsmåde ved lagring af data i et ikke-flygtigt datalager DK1497730T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20021792A NO315959B1 (no) 2002-04-16 2002-04-16 Fremgangsmåter til lagring av data i et ikke-flyktig minne

Publications (1)

Publication Number Publication Date
DK1497730T3 true DK1497730T3 (da) 2006-10-23

Family

ID=19913532

Family Applications (1)

Application Number Title Priority Date Filing Date
DK03723535T DK1497730T3 (da) 2002-04-16 2003-04-10 Fremgangsmåde ved lagring af data i et ikke-flygtigt datalager

Country Status (15)

Country Link
US (1) US6822890B2 (da)
EP (1) EP1497730B1 (da)
JP (1) JP2005522811A (da)
KR (1) KR100603671B1 (da)
CN (1) CN1329830C (da)
AT (1) ATE331987T1 (da)
AU (1) AU2003230468B2 (da)
CA (1) CA2481492A1 (da)
DE (1) DE60306510T2 (da)
DK (1) DK1497730T3 (da)
ES (1) ES2266812T3 (da)
HK (1) HK1078959A1 (da)
NO (1) NO315959B1 (da)
RU (1) RU2278426C2 (da)
WO (1) WO2003088041A1 (da)

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US7701247B1 (en) * 2005-10-28 2010-04-20 Xilinx, Inc. Data buffering with readout latency for single-event upset tolerant operation
JP4676378B2 (ja) * 2006-05-18 2011-04-27 株式会社バッファロー データ記憶装置およびデータ記憶方法
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
US7653846B2 (en) * 2006-12-28 2010-01-26 Intel Corporation Memory cell bit valve loss detection and restoration
JP4560072B2 (ja) * 2007-08-30 2010-10-13 株式会社東芝 半導体記憶装置
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory
JP2010079954A (ja) * 2008-09-24 2010-04-08 Toshiba Corp 半導体記憶装置および半導体記憶装置の駆動方法
JP2010097633A (ja) * 2008-10-14 2010-04-30 Toshiba Corp 半導体記憶装置
JP4491034B1 (ja) * 2008-12-19 2010-06-30 株式会社東芝 不揮発性記憶デバイスを有する記憶装置
CN101859548B (zh) * 2009-04-07 2012-08-29 瑞鼎科技股份有限公司 时序控制器及其操作方法
CN102609332A (zh) * 2011-01-19 2012-07-25 上海华虹集成电路有限责任公司 智能ic卡数据防掉电保护方法
CN102768631A (zh) * 2012-06-28 2012-11-07 惠州市德赛西威汽车电子有限公司 一种数据保存和校验方法
KR101970712B1 (ko) 2012-08-23 2019-04-22 삼성전자주식회사 단말기의 데이터 이동장치 및 방법
CN103794253B (zh) * 2012-10-30 2017-02-08 北京兆易创新科技股份有限公司 一种Nand闪存和读取其配置信息的方法和装置
US9110829B2 (en) * 2012-11-30 2015-08-18 Taiwan Semiconductor Manufacturing Co. Ltd. MRAM smart bit write algorithm with error correction parity bits
JP5902137B2 (ja) 2013-09-24 2016-04-13 株式会社東芝 ストレージシステム
US9093158B2 (en) * 2013-12-06 2015-07-28 Sandisk Technologies Inc. Write scheme for charge trapping memory
DE102015211320A1 (de) * 2015-06-19 2016-12-22 Robert Bosch Gmbh Speichereinheit zum automatischen Multiplizieren des Inhalts einer Speicherstelle, und Datennetz mit Speichereinheit
WO2017145530A1 (ja) * 2016-02-22 2017-08-31 株式会社村田製作所 圧電デバイス
CN106529940A (zh) * 2016-10-25 2017-03-22 天地融科技股份有限公司 一种智能卡的操作执行方法、智能卡读写系统和智能卡
US10388351B2 (en) * 2017-08-30 2019-08-20 Micron Technology, Inc. Wear leveling for random access and ferroelectric memory
WO2019152822A1 (en) * 2018-02-02 2019-08-08 Dover Microsystems, Inc. Systems and methods for post cache interlocking
CN108897499A (zh) * 2018-07-19 2018-11-27 江苏华存电子科技有限公司 一种闪存内块的类型识别方法
US10817370B2 (en) 2018-12-17 2020-10-27 Gsi Technology Inc. Self correcting memory device
US10811082B1 (en) * 2019-06-24 2020-10-20 Sandisk Technologies Llc Non-volatile memory with fast data cache transfer scheme
US10825526B1 (en) 2019-06-24 2020-11-03 Sandisk Technologies Llc Non-volatile memory with reduced data cache buffer
US10783978B1 (en) * 2019-08-27 2020-09-22 Micron Technology, Inc. Read voltage-assisted manufacturing tests of memory sub-system
US11282558B2 (en) * 2020-05-21 2022-03-22 Wuxi Petabyte Technologies Co., Ltd. Ferroelectric random-access memory with ROMFUSE area having redundant configuration wordlines
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US11948653B2 (en) * 2021-07-20 2024-04-02 Avago Technologies International Sales Pte. Limited Early error detection and automatic correction techniques for storage elements to improve reliability

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Also Published As

Publication number Publication date
WO2003088041A1 (en) 2003-10-23
CA2481492A1 (en) 2003-10-23
ES2266812T3 (es) 2007-03-01
RU2278426C2 (ru) 2006-06-20
CN1647045A (zh) 2005-07-27
AU2003230468A1 (en) 2003-10-27
JP2005522811A (ja) 2005-07-28
US6822890B2 (en) 2004-11-23
EP1497730B1 (en) 2006-06-28
DE60306510T2 (de) 2006-12-21
EP1497730A1 (en) 2005-01-19
KR20040105870A (ko) 2004-12-16
NO315959B1 (no) 2003-11-17
NO20021792L (no) 2003-10-17
KR100603671B1 (ko) 2006-07-20
RU2004131638A (ru) 2005-05-27
DE60306510D1 (de) 2006-08-10
AU2003230468B2 (en) 2007-11-08
CN1329830C (zh) 2007-08-01
ATE331987T1 (de) 2006-07-15
US20030218925A1 (en) 2003-11-27
HK1078959A1 (en) 2006-03-24
NO20021792D0 (no) 2002-04-16

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