DE10102354C1 - Halbleiter-Bauelement mit ESD-Schutz - Google Patents

Halbleiter-Bauelement mit ESD-Schutz

Info

Publication number
DE10102354C1
DE10102354C1 DE10102354A DE10102354A DE10102354C1 DE 10102354 C1 DE10102354 C1 DE 10102354C1 DE 10102354 A DE10102354 A DE 10102354A DE 10102354 A DE10102354 A DE 10102354A DE 10102354 C1 DE10102354 C1 DE 10102354C1
Authority
DE
Germany
Prior art keywords
conductor track
semiconductor body
signal
processed
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10102354A
Other languages
German (de)
English (en)
Inventor
Marco Troost
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Polaris Innovations Ltd
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE10102354A priority Critical patent/DE10102354C1/de
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to KR10-2003-7009295A priority patent/KR100530449B1/ko
Priority to PCT/DE2002/000175 priority patent/WO2002058154A2/de
Priority to JP2002558338A priority patent/JP3886905B2/ja
Priority to DE50211919T priority patent/DE50211919D1/de
Priority to EP02706607A priority patent/EP1360726B1/de
Priority to CNB028039335A priority patent/CN1244151C/zh
Application granted granted Critical
Publication of DE10102354C1 publication Critical patent/DE10102354C1/de
Priority to US10/623,815 priority patent/US7250659B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/80—Arrangements for protection of devices protecting against overcurrent or overload, e.g. fuses or shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE10102354A 2001-01-19 2001-01-19 Halbleiter-Bauelement mit ESD-Schutz Expired - Fee Related DE10102354C1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE10102354A DE10102354C1 (de) 2001-01-19 2001-01-19 Halbleiter-Bauelement mit ESD-Schutz
PCT/DE2002/000175 WO2002058154A2 (de) 2001-01-19 2002-01-21 Halbleiter-bauelement mit esd-schutz
JP2002558338A JP3886905B2 (ja) 2001-01-19 2002-01-21 Ｅｓｄ保護を備える半導体部品
DE50211919T DE50211919D1 (de) 2001-01-19 2002-01-21 Halbleiter-Bauelement mit ESD-Schutz
KR10-2003-7009295A KR100530449B1 (ko) 2001-01-19 2002-01-21 Ｅｓｄ 보호 소자를 포함하는 반도체 소자
EP02706607A EP1360726B1 (de) 2001-01-19 2002-01-21 Halbleiter-Bauelement mit ESD-Schutz
CNB028039335A CN1244151C (zh) 2001-01-19 2002-01-21 具esd保护之半导体组件
US10/623,815 US7250659B2 (en) 2001-01-19 2003-07-21 Semiconductor component with ESD protection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10102354A DE10102354C1 (de) 2001-01-19 2001-01-19 Halbleiter-Bauelement mit ESD-Schutz

Publications (1)

Publication Number Publication Date
DE10102354C1 true DE10102354C1 (de) 2002-08-08

Family

ID=7671118

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10102354A Expired - Fee Related DE10102354C1 (de) 2001-01-19 2001-01-19 Halbleiter-Bauelement mit ESD-Schutz
DE50211919T Expired - Lifetime DE50211919D1 (de) 2001-01-19 2002-01-21 Halbleiter-Bauelement mit ESD-Schutz

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE50211919T Expired - Lifetime DE50211919D1 (de) 2001-01-19 2002-01-21 Halbleiter-Bauelement mit ESD-Schutz

Country Status (7)

Country Link
US (1) US7250659B2 (https=)
EP (1) EP1360726B1 (https=)
JP (1) JP3886905B2 (https=)
KR (1) KR100530449B1 (https=)
CN (1) CN1244151C (https=)
DE (2) DE10102354C1 (https=)
WO (1) WO2002058154A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004031455A1 (de) * 2004-06-29 2006-01-19 Infineon Technologies Ag Verfahren zur Erstellung eines ESD-Schutzes bei einem mikroelektronischen Baustein und entsprechend ausgebildeter mikroelektronischer Baustein

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9387313B2 (en) 2004-08-03 2016-07-12 Interventional Spine, Inc. Telescopic percutaneous tissue dilation systems and related methods
JP4993092B2 (ja) * 2007-05-31 2012-08-08 富士電機株式会社 レベルシフト回路および半導体装置
US7586179B2 (en) * 2007-10-09 2009-09-08 Fairchild Semiconductor Corporation Wireless semiconductor package for efficient heat dissipation
US10015916B1 (en) * 2013-05-21 2018-07-03 Xilinx, Inc. Removal of electrostatic charges from an interposer via a ground pad thereof for die attach for formation of a stacked die
US9960227B2 (en) 2013-09-11 2018-05-01 Xilinx, Inc. Removal of electrostatic charges from interposer for die attachment
US11088134B2 (en) 2016-11-07 2021-08-10 Dialog Semiconductor (Uk) Limited Electrostatic discharge device and split multi rail network with symmetrical layout design technique

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0736904A1 (de) * 1995-04-06 1996-10-09 Siemens Aktiengesellschaft Integrierte Halbleiterschaltung mit einem Schutzmittel

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065705B2 (ja) * 1989-08-11 1994-01-19 株式会社東芝 半導体集積回路装置
JPH03156965A (ja) * 1989-11-15 1991-07-04 Fujitsu Ltd 半導体集積回路装置
JPH05308107A (ja) * 1991-07-01 1993-11-19 Sumitomo Electric Ind Ltd 半導体装置及びその製作方法
JP2888005B2 (ja) * 1992-01-24 1999-05-10 住友電気工業株式会社 マイクロ波デバイス用パッケージ
EP0623958B1 (de) * 1993-05-04 1998-04-01 Siemens Aktiengesellschaft Integrierte Halbleiterschaltung mit einem Schutzmittel
DE19507313C2 (de) * 1995-03-02 1996-12-19 Siemens Ag Halbleiterbauelement mit Schutzstruktur zum Schutz vor elektrostatischer Entladung
US5917362A (en) * 1996-01-29 1999-06-29 Sony Corporation Switching circuit
JPH1022448A (ja) 1996-07-03 1998-01-23 Oki Micro Design Miyazaki:Kk 静電破壊／ラッチアップ対策半導体装置
US6476486B1 (en) * 1997-10-30 2002-11-05 Agilent Technologies, Inc. Ball grid array package with supplemental electronic component
US5886862A (en) * 1997-11-26 1999-03-23 Digital Equipment Corporation Cross-referenced electrostatic discharge protection systems and methods for power supplies

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0736904A1 (de) * 1995-04-06 1996-10-09 Siemens Aktiengesellschaft Integrierte Halbleiterschaltung mit einem Schutzmittel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004031455A1 (de) * 2004-06-29 2006-01-19 Infineon Technologies Ag Verfahren zur Erstellung eines ESD-Schutzes bei einem mikroelektronischen Baustein und entsprechend ausgebildeter mikroelektronischer Baustein
DE102004031455B4 (de) * 2004-06-29 2014-10-30 Infineon Technologies Ag Verfahren zur Erstellung eines ESD-Schutzes bei einem mikroelektronischen Baustein und entsprechend ausgebildeter mikroelektronischer Baustein

Also Published As

Publication number Publication date
EP1360726B1 (de) 2008-03-19
CN1244151C (zh) 2006-03-01
CN1488171A (zh) 2004-04-07
US20040056339A1 (en) 2004-03-25
EP1360726A2 (de) 2003-11-12
KR100530449B1 (ko) 2005-11-22
KR20030072594A (ko) 2003-09-15
JP3886905B2 (ja) 2007-02-28
DE50211919D1 (de) 2008-04-30
WO2002058154A2 (de) 2002-07-25
JP2004531051A (ja) 2004-10-07
WO2002058154A3 (de) 2003-08-21
US7250659B2 (en) 2007-07-31

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Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

R081 Change of applicant/patentee

Owner name: POLARIS INNOVATIONS LTD., IE

Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE

Owner name: INFINEON TECHNOLOGIES AG, DE

Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE

R081 Change of applicant/patentee

Owner name: POLARIS INNOVATIONS LTD., IE

Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG, 85579 NEUBIBERG, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee