CN1244151C - 具esd保护之半导体组件 - Google Patents

具esd保护之半导体组件 Download PDF

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Publication number
CN1244151C
CN1244151C CNB028039335A CN02803933A CN1244151C CN 1244151 C CN1244151 C CN 1244151C CN B028039335 A CNB028039335 A CN B028039335A CN 02803933 A CN02803933 A CN 02803933A CN 1244151 C CN1244151 C CN 1244151C
Authority
CN
China
Prior art keywords
conductor tracks
end points
semiconductor chip
semiconductor
outside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028039335A
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English (en)
Chinese (zh)
Other versions
CN1488171A (zh
Inventor
M·特鲁斯特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of CN1488171A publication Critical patent/CN1488171A/zh
Application granted granted Critical
Publication of CN1244151C publication Critical patent/CN1244151C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/80—Arrangements for protection of devices protecting against overcurrent or overload, e.g. fuses or shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB028039335A 2001-01-19 2002-01-21 具esd保护之半导体组件 Expired - Fee Related CN1244151C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10102354A DE10102354C1 (de) 2001-01-19 2001-01-19 Halbleiter-Bauelement mit ESD-Schutz
DE10102354.5 2001-01-19

Publications (2)

Publication Number Publication Date
CN1488171A CN1488171A (zh) 2004-04-07
CN1244151C true CN1244151C (zh) 2006-03-01

Family

ID=7671118

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028039335A Expired - Fee Related CN1244151C (zh) 2001-01-19 2002-01-21 具esd保护之半导体组件

Country Status (7)

Country Link
US (1) US7250659B2 (https=)
EP (1) EP1360726B1 (https=)
JP (1) JP3886905B2 (https=)
KR (1) KR100530449B1 (https=)
CN (1) CN1244151C (https=)
DE (2) DE10102354C1 (https=)
WO (1) WO2002058154A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004031455B4 (de) * 2004-06-29 2014-10-30 Infineon Technologies Ag Verfahren zur Erstellung eines ESD-Schutzes bei einem mikroelektronischen Baustein und entsprechend ausgebildeter mikroelektronischer Baustein
US9387313B2 (en) 2004-08-03 2016-07-12 Interventional Spine, Inc. Telescopic percutaneous tissue dilation systems and related methods
JP4993092B2 (ja) * 2007-05-31 2012-08-08 富士電機株式会社 レベルシフト回路および半導体装置
US7586179B2 (en) * 2007-10-09 2009-09-08 Fairchild Semiconductor Corporation Wireless semiconductor package for efficient heat dissipation
US10015916B1 (en) * 2013-05-21 2018-07-03 Xilinx, Inc. Removal of electrostatic charges from an interposer via a ground pad thereof for die attach for formation of a stacked die
US9960227B2 (en) 2013-09-11 2018-05-01 Xilinx, Inc. Removal of electrostatic charges from interposer for die attachment
US11088134B2 (en) 2016-11-07 2021-08-10 Dialog Semiconductor (Uk) Limited Electrostatic discharge device and split multi rail network with symmetrical layout design technique

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065705B2 (ja) * 1989-08-11 1994-01-19 株式会社東芝 半導体集積回路装置
JPH03156965A (ja) * 1989-11-15 1991-07-04 Fujitsu Ltd 半導体集積回路装置
JPH05308107A (ja) * 1991-07-01 1993-11-19 Sumitomo Electric Ind Ltd 半導体装置及びその製作方法
JP2888005B2 (ja) * 1992-01-24 1999-05-10 住友電気工業株式会社 マイクロ波デバイス用パッケージ
EP0623958B1 (de) * 1993-05-04 1998-04-01 Siemens Aktiengesellschaft Integrierte Halbleiterschaltung mit einem Schutzmittel
DE19507313C2 (de) * 1995-03-02 1996-12-19 Siemens Ag Halbleiterbauelement mit Schutzstruktur zum Schutz vor elektrostatischer Entladung
DE59510495D1 (de) * 1995-04-06 2003-01-16 Infineon Technologies Ag Integrierte Halbleiterschaltung mit einem Schutzmittel
US5917362A (en) * 1996-01-29 1999-06-29 Sony Corporation Switching circuit
JPH1022448A (ja) 1996-07-03 1998-01-23 Oki Micro Design Miyazaki:Kk 静電破壊／ラッチアップ対策半導体装置
US6476486B1 (en) * 1997-10-30 2002-11-05 Agilent Technologies, Inc. Ball grid array package with supplemental electronic component
US5886862A (en) * 1997-11-26 1999-03-23 Digital Equipment Corporation Cross-referenced electrostatic discharge protection systems and methods for power supplies

Also Published As

Publication number Publication date
EP1360726B1 (de) 2008-03-19
CN1488171A (zh) 2004-04-07
DE10102354C1 (de) 2002-08-08
US20040056339A1 (en) 2004-03-25
EP1360726A2 (de) 2003-11-12
KR100530449B1 (ko) 2005-11-22
KR20030072594A (ko) 2003-09-15
JP3886905B2 (ja) 2007-02-28
DE50211919D1 (de) 2008-04-30
WO2002058154A2 (de) 2002-07-25
JP2004531051A (ja) 2004-10-07
WO2002058154A3 (de) 2003-08-21
US7250659B2 (en) 2007-07-31

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C41 Transfer of patent application or patent right or utility model
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Owner name: INFINEON TECHNOLOGIES AG

Free format text: FORMER NAME: INFENNIAN TECHNOLOGIES AG

CP01 Change in the name or title of a patent holder

Address after: Munich, Germany

Patentee after: Infineon Technologies AG

Address before: Munich, Germany

Patentee before: INFINEON TECHNOLOGIES AG

TR01 Transfer of patent right

Effective date of registration: 20130607

Address after: Munich, Germany

Patentee after: QIMONDA AG

Address before: Munich, Germany

Patentee before: Infineon Technologies AG

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160114

Address after: German Berg, Laura Ibiza

Patentee after: Infineon Technologies AG

Address before: Munich, Germany

Patentee before: QIMONDA AG

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060301

Termination date: 20160121

EXPY Termination of patent right or utility model