DE10058578C2 - Lichtemittierendes Bauelement mit organischen Schichten - Google Patents
Lichtemittierendes Bauelement mit organischen SchichtenInfo
- Publication number
- DE10058578C2 DE10058578C2 DE10058578A DE10058578A DE10058578C2 DE 10058578 C2 DE10058578 C2 DE 10058578C2 DE 10058578 A DE10058578 A DE 10058578A DE 10058578 A DE10058578 A DE 10058578A DE 10058578 C2 DE10058578 C2 DE 10058578C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- layers
- transport layer
- light
- component according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012044 organic layer Substances 0.000 title claims abstract description 10
- 239000010410 layer Substances 0.000 claims abstract description 233
- 239000000463 material Substances 0.000 claims description 28
- 239000000126 substance Substances 0.000 claims description 15
- 230000005525 hole transport Effects 0.000 claims description 10
- 239000002800 charge carrier Substances 0.000 abstract description 37
- 238000005215 recombination Methods 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 7
- 230000000903 blocking effect Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 4
- 239000011368 organic material Substances 0.000 abstract description 3
- 238000002347 injection Methods 0.000 description 27
- 239000007924 injection Substances 0.000 description 27
- 239000002019 doping agent Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000004770 highest occupied molecular orbital Methods 0.000 description 8
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 8
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 5
- 239000000370 acceptor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 4
- 238000010791 quenching Methods 0.000 description 4
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 235000005505 Ziziphus oenoplia Nutrition 0.000 description 1
- 244000104547 Ziziphus oenoplia Species 0.000 description 1
- IUFDZNVMARBLOJ-UHFFFAOYSA-K aluminum;quinoline-2-carboxylate Chemical compound [Al+3].C1=CC=CC2=NC(C(=O)[O-])=CC=C21.C1=CC=CC2=NC(C(=O)[O-])=CC=C21.C1=CC=CC2=NC(C(=O)[O-])=CC=C21 IUFDZNVMARBLOJ-UHFFFAOYSA-K 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Priority Applications (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10058578A DE10058578C2 (de) | 2000-11-20 | 2000-11-20 | Lichtemittierendes Bauelement mit organischen Schichten |
| BR0115497-4A BR0115497A (pt) | 2000-11-20 | 2001-11-20 | Componente emissor de luz com câmadas orgânicas |
| US10/432,173 US7074500B2 (en) | 2000-11-20 | 2001-11-20 | Light emitting component comprising organic layers |
| AU2002216935A AU2002216935A1 (en) | 2000-11-20 | 2001-11-20 | Light emitting component comprising organic layers |
| EP01996894A EP1336208B1 (de) | 2000-11-20 | 2001-11-20 | Lichtemittierendes bauelement mit organischen schichten |
| JP2002543714A JP3695714B2 (ja) | 2000-11-20 | 2001-11-20 | 有機層を持つ発光素子 |
| KR20037006815A KR100641900B1 (ko) | 2000-11-20 | 2001-11-20 | 유기층을 갖는 발광 소자 |
| CNB018191924A CN100369286C (zh) | 2000-11-20 | 2001-11-20 | 包含有机层的发光元件 |
| DE50111165T DE50111165D1 (de) | 2000-11-20 | 2001-11-20 | Lichtemittierendes bauelement mit organischen schichten |
| PCT/DE2001/004422 WO2002041414A1 (de) | 2000-11-20 | 2001-11-20 | Lichtemittierendes bauelement mit organischen schichten |
| ES01996894T ES2273923T3 (es) | 2000-11-20 | 2001-11-20 | Componente emisor de luz con capas organicas. |
| AT01996894T ATE341837T1 (de) | 2000-11-20 | 2001-11-20 | Lichtemittierendes bauelement mit organischen schichten |
| IN736DE2003 IN2003DE00736A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2000-11-20 | 2003-05-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10058578A DE10058578C2 (de) | 2000-11-20 | 2000-11-20 | Lichtemittierendes Bauelement mit organischen Schichten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE10058578A1 DE10058578A1 (de) | 2002-06-06 |
| DE10058578C2 true DE10058578C2 (de) | 2002-11-28 |
Family
ID=7664651
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10058578A Expired - Lifetime DE10058578C2 (de) | 2000-11-20 | 2000-11-20 | Lichtemittierendes Bauelement mit organischen Schichten |
| DE50111165T Expired - Fee Related DE50111165D1 (de) | 2000-11-20 | 2001-11-20 | Lichtemittierendes bauelement mit organischen schichten |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE50111165T Expired - Fee Related DE50111165D1 (de) | 2000-11-20 | 2001-11-20 | Lichtemittierendes bauelement mit organischen schichten |
Country Status (12)
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10339772B4 (de) * | 2003-08-27 | 2006-07-13 | Novaled Gmbh | Licht emittierendes Bauelement und Verfahren zu seiner Herstellung |
| EP1806795A1 (de) | 2005-12-21 | 2007-07-11 | Novaled AG | Organisches Bauelement |
| DE102006052029A1 (de) * | 2006-09-22 | 2008-03-27 | Osram Opto Semiconductors Gmbh | Lichtemittierende Vorrichtung |
| EP2264806A2 (de) | 2005-04-13 | 2010-12-22 | Novaled AG | Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen |
Families Citing this family (150)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10135513B4 (de) | 2001-07-20 | 2005-02-24 | Novaled Gmbh | Lichtemittierendes Bauelement mit organischen Schichten |
| US6603150B2 (en) * | 2001-09-28 | 2003-08-05 | Eastman Kodak Company | Organic light-emitting diode having an interface layer between the hole-transporting layer and the light-emitting layer |
| US7141817B2 (en) | 2001-11-30 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20100026176A1 (en) | 2002-03-28 | 2010-02-04 | Jan Blochwitz-Nomith | Transparent, Thermally Stable Light-Emitting Component Having Organic Layers |
| DE10215210B4 (de) * | 2002-03-28 | 2006-07-13 | Novaled Gmbh | Transparentes, thermisch stabiles lichtemittierendes Bauelement mit organischen Schichten |
| EP1353388B1 (en) * | 2002-04-12 | 2010-03-17 | Konica Corporation | Organic electroluminescence element |
| DE10224021B4 (de) * | 2002-05-24 | 2006-06-01 | Novaled Gmbh | Phosphoreszentes lichtemittierendes Bauelement mit organischen Schichten |
| CN100565960C (zh) * | 2003-04-02 | 2009-12-02 | 富士胶片株式会社 | 有机电致发光元件和有机电致发光显示器 |
| KR101286219B1 (ko) | 2003-09-26 | 2013-07-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광소자의 제조방법 |
| EP1521316B1 (en) | 2003-10-03 | 2016-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of a light emitting element |
| ATE454719T1 (de) * | 2003-10-29 | 2010-01-15 | Koninkl Philips Electronics Nv | Lichtaussendendes gerät mit verbesserter quantenausbeute |
| DE10357044A1 (de) * | 2003-12-04 | 2005-07-14 | Novaled Gmbh | Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten |
| CN101673808B (zh) | 2003-12-26 | 2012-05-23 | 株式会社半导体能源研究所 | 发光元件 |
| US20060017057A1 (en) * | 2004-07-20 | 2006-01-26 | Cumpston Brian H | Device structure to improve OLED reliability |
| TWI270318B (en) * | 2004-03-30 | 2007-01-01 | Osram Opto Semiconductors Gmbh | Device structure to improve OLED reliability |
| DE102004022004B4 (de) * | 2004-05-03 | 2007-07-05 | Novaled Ag | Schichtanordnung für eine organische lichtemittierende Diode |
| JP2006295104A (ja) | 2004-07-23 | 2006-10-26 | Semiconductor Energy Lab Co Ltd | 発光素子およびそれを用いた発光装置 |
| US7540978B2 (en) | 2004-08-05 | 2009-06-02 | Novaled Ag | Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component |
| EP1789994A1 (de) | 2004-08-13 | 2007-05-30 | Novaled AG | Schichtanordnung für ein lichtemittierendes bauelement |
| CN1738069A (zh) | 2004-08-17 | 2006-02-22 | 国际商业机器公司 | 其电极具有增强注入特性的电子器件制造方法和电子器件 |
| EP1803172B1 (en) | 2004-09-24 | 2017-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| EP1648042B1 (en) | 2004-10-07 | 2007-05-02 | Novaled AG | A method for doping a semiconductor material with cesium |
| KR101436791B1 (ko) | 2004-10-29 | 2014-09-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합 재료, 발광 소자, 발광 장치 및 이의 제조방법 |
| EP1705727B1 (de) * | 2005-03-15 | 2007-12-26 | Novaled AG | Lichtemittierendes Bauelement |
| EP1866984B1 (en) | 2005-03-23 | 2017-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Composite material, light emitting element and light emitting device |
| US7851989B2 (en) | 2005-03-25 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US8057916B2 (en) | 2005-04-20 | 2011-11-15 | Global Oled Technology, Llc. | OLED device with improved performance |
| EP1724852A3 (en) * | 2005-05-20 | 2010-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
| EP1727221B1 (de) * | 2005-05-27 | 2010-04-14 | Novaled AG | Transparente organische Leuchtdiode |
| US8334057B2 (en) | 2005-06-08 | 2012-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
| CN101194379B (zh) * | 2005-06-10 | 2010-05-19 | 汤姆森特许公司 | 包含不超过两层不同有机材料的有机发光二极管 |
| US7745989B2 (en) | 2005-06-30 | 2010-06-29 | Semiconductor Energy Laboratory Co., Ltd | Light emitting element, light emitting device, and electronic apparatus |
| EP1739765A1 (de) * | 2005-07-01 | 2007-01-03 | Novaled AG | Organische Leuchtdiode und Anordnung mit mehreren organischen Leuchtdioden |
| EP1943678A1 (fr) | 2005-11-04 | 2008-07-16 | Thomson Licensing | Élement electro-optique integrant une diode organique electroluminescente et un transistor organique de modulation de cette diode. |
| KR100752383B1 (ko) * | 2005-12-26 | 2007-08-27 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그 제조방법 |
| DE602006001930D1 (de) * | 2005-12-23 | 2008-09-04 | Novaled Ag | tur von organischen Schichten |
| EP1968131A4 (en) | 2005-12-27 | 2009-08-19 | Idemitsu Kosan Co | MATERIAL FOR AN ORGANIC ELECTROLUMINESCENCE DEVICE AND ORGANIC ELECTROLUMINESCENCE DEVICE |
| EP1808909A1 (de) | 2006-01-11 | 2007-07-18 | Novaled AG | Elekrolumineszente Lichtemissionseinrichtung |
| WO2007080801A1 (ja) | 2006-01-11 | 2007-07-19 | Idemitsu Kosan Co., Ltd. | 新規イミド誘導体、有機エレクトロルミネッセンス素子用材料及びそれを用いた有機エレクトロルミネッセンス素子 |
| WO2007095061A2 (en) * | 2006-02-09 | 2007-08-23 | Qd Vision, Inc. | Device including semiconductor nanocrystals and a layer including a doped organic material and methods |
| DE602007014188D1 (de) * | 2006-02-27 | 2011-06-09 | Commissariat Energie Atomique | Organische leuchtdiode mit mehrschichtiger transparenter elektrode |
| WO2007099229A2 (fr) | 2006-02-28 | 2007-09-07 | Commissariat A L'energie Atomique | Composant électronique à semi-conducteur organique dopé p. |
| EP2000456A2 (en) | 2006-03-30 | 2008-12-10 | Idemitsu Kosan Co., Ltd. | Material for organic electroluminescent device and organic electroluminescent device using the same |
| EP1848049B1 (de) * | 2006-04-19 | 2009-12-09 | Novaled AG | Lichtemittierendes Bauelement |
| EP1860709B1 (de) * | 2006-05-24 | 2012-08-08 | Novaled AG | Verwendung von quadratisch planaren Übergangsmetallkomplexen als Dotand |
| KR20090034987A (ko) * | 2006-07-19 | 2009-04-08 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 광전 활성 유기 다이오드, 이러한 다이오드를 포함하는, 조명 장치, 디스플레이 장치, 및 유기 태양 전지 장치 |
| GB2440368A (en) * | 2006-07-26 | 2008-01-30 | Oled T Ltd | Cathode coating for an electroluminescent device |
| US8884322B2 (en) | 2006-09-22 | 2014-11-11 | Osram Opto Semiconductor Gmbh | Light-emitting device |
| DE102006059509B4 (de) | 2006-12-14 | 2012-05-03 | Novaled Ag | Organisches Leuchtbauelement |
| KR20090088902A (ko) | 2006-12-15 | 2009-08-20 | 이데미쓰 고산 가부시키가이샤 | 유기 전계 발광 소자용 재료 및 유기 전계 발광 소자 |
| WO2008074847A1 (fr) * | 2006-12-20 | 2008-06-26 | Thomson Licensing | Diode organique electroluminescente ayant une couche barriere en materiau bipolaire |
| KR100826002B1 (ko) * | 2007-03-28 | 2008-04-29 | 엘지디스플레이 주식회사 | 유기전계발광소자 |
| DE102007019260B4 (de) * | 2007-04-17 | 2020-01-16 | Novaled Gmbh | Nichtflüchtiges organisches Speicherelement |
| US8044390B2 (en) | 2007-05-25 | 2011-10-25 | Idemitsu Kosan Co., Ltd. | Material for organic electroluminescent device, organic electroluminescent device, and organic electroluminescent display |
| KR20100031127A (ko) | 2007-07-11 | 2010-03-19 | 이데미쓰 고산 가부시키가이샤 | 유기 전계 발광 소자용 재료 및 유기 전계 발광 소자 |
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| DE10339772B4 (de) * | 2003-08-27 | 2006-07-13 | Novaled Gmbh | Licht emittierendes Bauelement und Verfahren zu seiner Herstellung |
| EP2264806A2 (de) | 2005-04-13 | 2010-12-22 | Novaled AG | Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen |
| EP2284923A2 (de) | 2005-04-13 | 2011-02-16 | Novaled AG | Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen |
| EP1806795A1 (de) | 2005-12-21 | 2007-07-11 | Novaled AG | Organisches Bauelement |
| DE102006052029A1 (de) * | 2006-09-22 | 2008-03-27 | Osram Opto Semiconductors Gmbh | Lichtemittierende Vorrichtung |
| DE102006052029B4 (de) * | 2006-09-22 | 2020-01-09 | Osram Oled Gmbh | Lichtemittierende Vorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030072355A (ko) | 2003-09-13 |
| US20040062949A1 (en) | 2004-04-01 |
| ATE341837T1 (de) | 2006-10-15 |
| DE10058578A1 (de) | 2002-06-06 |
| US7074500B2 (en) | 2006-07-11 |
| IN2003DE00736A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2006-05-12 |
| ES2273923T3 (es) | 2007-05-16 |
| CN100369286C (zh) | 2008-02-13 |
| BR0115497A (pt) | 2003-10-21 |
| JP2004514257A (ja) | 2004-05-13 |
| DE50111165D1 (de) | 2006-11-16 |
| EP1336208B1 (de) | 2006-10-04 |
| CN1475035A (zh) | 2004-02-11 |
| AU2002216935A1 (en) | 2002-05-27 |
| KR100641900B1 (ko) | 2006-11-03 |
| JP3695714B2 (ja) | 2005-09-14 |
| EP1336208A1 (de) | 2003-08-20 |
| WO2002041414A1 (de) | 2002-05-23 |
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