DE10035108B4 - Nichtflüchtiger ferroelektrischer Speicher - Google Patents

Nichtflüchtiger ferroelektrischer Speicher Download PDF

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Publication number
DE10035108B4
DE10035108B4 DE10035108A DE10035108A DE10035108B4 DE 10035108 B4 DE10035108 B4 DE 10035108B4 DE 10035108 A DE10035108 A DE 10035108A DE 10035108 A DE10035108 A DE 10035108A DE 10035108 B4 DE10035108 B4 DE 10035108B4
Authority
DE
Germany
Prior art keywords
transistor
pull
sense amplifier
signal
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10035108A
Other languages
German (de)
English (en)
Other versions
DE10035108A1 (de
Inventor
Hee Bok Kang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of DE10035108A1 publication Critical patent/DE10035108A1/de
Application granted granted Critical
Publication of DE10035108B4 publication Critical patent/DE10035108B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE10035108A 1999-07-21 2000-07-19 Nichtflüchtiger ferroelektrischer Speicher Expired - Fee Related DE10035108B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019990029647A KR100335119B1 (ko) 1999-07-21 1999-07-21 불휘발성 강유전체 메모리 장치
KRP99-29647 1999-07-21

Publications (2)

Publication Number Publication Date
DE10035108A1 DE10035108A1 (de) 2001-02-08
DE10035108B4 true DE10035108B4 (de) 2006-08-17

Family

ID=19603493

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10035108A Expired - Fee Related DE10035108B4 (de) 1999-07-21 2000-07-19 Nichtflüchtiger ferroelektrischer Speicher

Country Status (3)

Country Link
JP (1) JP4553453B2 (ko)
KR (1) KR100335119B1 (ko)
DE (1) DE10035108B4 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100499631B1 (ko) * 2002-11-08 2005-07-05 주식회사 하이닉스반도체 강유전체 메모리 장치
KR100709436B1 (ko) 2006-02-17 2007-04-18 주식회사 하이닉스반도체 멀티 칩 패키지 장치 및 그 형성 방법
US7842990B2 (en) 2006-02-17 2010-11-30 Hynix Semiconductor Inc. Nonvolatile ferroelectric memory device including trench capacitor
KR100709455B1 (ko) * 2006-02-17 2007-04-18 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그 형성 방법
JP2007257786A (ja) * 2006-03-24 2007-10-04 Toshiba Corp 半導体記憶装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5228106A (en) * 1991-05-30 1993-07-13 Integrated Device Technology, Inc. Track-and-regenerate amplifiers and memories using such amplifiers
US5367213A (en) * 1993-06-09 1994-11-22 Micron Semiconductor, Inc. P-channel sense amplifier pull-up circuit incorporating a voltage comparator for use in DRAM memories having non-bootstrapped word lines
US5668765A (en) * 1996-06-06 1997-09-16 Philips Electronics North America Corporation Charge transfer sense amplifier

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2885415B2 (ja) * 1989-03-17 1999-04-26 株式会社東芝 ダイナミック型半導体記憶装置
KR100261174B1 (ko) * 1997-12-12 2000-07-01 김영환 비휘발성 강유전체 메모리 및 그의 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5228106A (en) * 1991-05-30 1993-07-13 Integrated Device Technology, Inc. Track-and-regenerate amplifiers and memories using such amplifiers
US5367213A (en) * 1993-06-09 1994-11-22 Micron Semiconductor, Inc. P-channel sense amplifier pull-up circuit incorporating a voltage comparator for use in DRAM memories having non-bootstrapped word lines
US5668765A (en) * 1996-06-06 1997-09-16 Philips Electronics North America Corporation Charge transfer sense amplifier

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KANG, H.B. et al: "Multi-phase-driven split-word- line ferroelectric memory without plate line" IEEE International Solid-State Circuits Conferen- ce, 15-17 Feb. 1999, 108-109 *
KOIKE H., et al.: "A 60ns 1Mb Nonvolatile Ferro- electric Memory with Non-Driven Cell Plate Line Write/Read Scheme", IEEE International Solid- State Circuits Conference, 10. Feb. 1996, 368-369, 475
KOIKE H., et al.: "A 60ns 1Mb Nonvolatile Ferro- electric Memory with Non-Driven Cell Plate Line Write/Read Scheme", IEEE International Solid- State Circuits Conference, 10. Feb. 1996, 368-369,475 *

Also Published As

Publication number Publication date
JP4553453B2 (ja) 2010-09-29
KR100335119B1 (ko) 2002-05-04
KR20010010654A (ko) 2001-02-15
JP2001057073A (ja) 2001-02-27
DE10035108A1 (de) 2001-02-08

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140201