JP4553453B2 - 不揮発性強誘電体メモリ装置 - Google Patents

不揮発性強誘電体メモリ装置 Download PDF

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Publication number
JP4553453B2
JP4553453B2 JP2000212943A JP2000212943A JP4553453B2 JP 4553453 B2 JP4553453 B2 JP 4553453B2 JP 2000212943 A JP2000212943 A JP 2000212943A JP 2000212943 A JP2000212943 A JP 2000212943A JP 4553453 B2 JP4553453 B2 JP 4553453B2
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JP
Japan
Prior art keywords
transistor
pull
sensing amplifier
cell array
amplifier unit
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000212943A
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English (en)
Japanese (ja)
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JP2001057073A (ja
Inventor
煕 福 姜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
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Hynix Semiconductor Inc
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Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of JP2001057073A publication Critical patent/JP2001057073A/ja
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Publication of JP4553453B2 publication Critical patent/JP4553453B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2000212943A 1999-07-21 2000-07-13 不揮発性強誘電体メモリ装置 Expired - Fee Related JP4553453B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR29647/1999 1999-07-21
KR1019990029647A KR100335119B1 (ko) 1999-07-21 1999-07-21 불휘발성 강유전체 메모리 장치

Publications (2)

Publication Number Publication Date
JP2001057073A JP2001057073A (ja) 2001-02-27
JP4553453B2 true JP4553453B2 (ja) 2010-09-29

Family

ID=19603493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000212943A Expired - Fee Related JP4553453B2 (ja) 1999-07-21 2000-07-13 不揮発性強誘電体メモリ装置

Country Status (3)

Country Link
JP (1) JP4553453B2 (ko)
KR (1) KR100335119B1 (ko)
DE (1) DE10035108B4 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100499631B1 (ko) * 2002-11-08 2005-07-05 주식회사 하이닉스반도체 강유전체 메모리 장치
US7842990B2 (en) 2006-02-17 2010-11-30 Hynix Semiconductor Inc. Nonvolatile ferroelectric memory device including trench capacitor
KR100709436B1 (ko) 2006-02-17 2007-04-18 주식회사 하이닉스반도체 멀티 칩 패키지 장치 및 그 형성 방법
KR100709455B1 (ko) * 2006-02-17 2007-04-18 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그 형성 방법
JP2007257786A (ja) * 2006-03-24 2007-10-04 Toshiba Corp 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2885415B2 (ja) * 1989-03-17 1999-04-26 株式会社東芝 ダイナミック型半導体記憶装置
US5228106A (en) * 1991-05-30 1993-07-13 Integrated Device Technology, Inc. Track-and-regenerate amplifiers and memories using such amplifiers
US5367213A (en) * 1993-06-09 1994-11-22 Micron Semiconductor, Inc. P-channel sense amplifier pull-up circuit incorporating a voltage comparator for use in DRAM memories having non-bootstrapped word lines
US5668765A (en) * 1996-06-06 1997-09-16 Philips Electronics North America Corporation Charge transfer sense amplifier
KR100261174B1 (ko) * 1997-12-12 2000-07-01 김영환 비휘발성 강유전체 메모리 및 그의 제조 방법

Also Published As

Publication number Publication date
JP2001057073A (ja) 2001-02-27
DE10035108B4 (de) 2006-08-17
DE10035108A1 (de) 2001-02-08
KR20010010654A (ko) 2001-02-15
KR100335119B1 (ko) 2002-05-04

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