CN1958663B - 液状环氧树脂组成物 - Google Patents
液状环氧树脂组成物 Download PDFInfo
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- CN1958663B CN1958663B CN2006101376440A CN200610137644A CN1958663B CN 1958663 B CN1958663 B CN 1958663B CN 2006101376440 A CN2006101376440 A CN 2006101376440A CN 200610137644 A CN200610137644 A CN 200610137644A CN 1958663 B CN1958663 B CN 1958663B
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- Prior art keywords
- acid
- epoxy resin
- liquid epoxy
- resin composition
- amine
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 68
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 title claims abstract description 39
- -1 organic acids salts Chemical class 0.000 claims abstract description 42
- 150000001412 amines Chemical class 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 150000001413 amino acids Chemical class 0.000 claims abstract description 22
- 239000011256 inorganic filler Substances 0.000 claims abstract description 11
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 11
- 239000004593 Epoxy Substances 0.000 claims description 50
- 229920005989 resin Polymers 0.000 claims description 48
- 239000011347 resin Substances 0.000 claims description 48
- 239000003351 stiffener Substances 0.000 claims description 40
- 239000002253 acid Substances 0.000 claims description 39
- 239000000470 constituent Substances 0.000 claims description 13
- 229920001296 polysiloxane Polymers 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 150000004982 aromatic amines Chemical group 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 3
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 claims 2
- 150000003973 alkyl amines Chemical class 0.000 claims 1
- 150000001414 amino alcohols Chemical class 0.000 claims 1
- 150000003053 piperidines Chemical class 0.000 claims 1
- UXAWXZDXVOYLII-UHFFFAOYSA-N tert-butyl 2,5-diazabicyclo[2.2.1]heptane-2-carboxylate Chemical compound C1C2N(C(=O)OC(C)(C)C)CC1NC2 UXAWXZDXVOYLII-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 16
- 229920000647 polyepoxide Polymers 0.000 abstract description 14
- 229910000679 solder Inorganic materials 0.000 abstract description 14
- 239000003795 chemical substances by application Substances 0.000 abstract description 13
- 239000003822 epoxy resin Substances 0.000 abstract description 13
- 150000001875 compounds Chemical class 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 2
- 125000001841 imino group Chemical class [H]N=* 0.000 abstract description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 abstract description 2
- 150000002830 nitrogen compounds Chemical class 0.000 abstract description 2
- 230000001476 alcoholic effect Effects 0.000 abstract 1
- 235000005985 organic acids Nutrition 0.000 abstract 1
- 150000003512 tertiary amines Chemical class 0.000 abstract 1
- 238000005476 soldering Methods 0.000 description 22
- 230000004907 flux Effects 0.000 description 21
- 229940024606 amino acid Drugs 0.000 description 18
- 235000001014 amino acid Nutrition 0.000 description 18
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 16
- 238000012360 testing method Methods 0.000 description 16
- 238000002156 mixing Methods 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Natural products CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical group CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 7
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 6
- 230000002378 acidificating effect Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- UXFQFBNBSPQBJW-UHFFFAOYSA-N 2-amino-2-methylpropane-1,3-diol Chemical compound OCC(N)(C)CO UXFQFBNBSPQBJW-UHFFFAOYSA-N 0.000 description 4
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 150000008065 acid anhydrides Chemical class 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 239000006229 carbon black Substances 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- JFCQEDHGNNZCLN-UHFFFAOYSA-N glutaric acid Chemical compound OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 4
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 125000002769 thiazolinyl group Chemical group 0.000 description 4
- VOORKBJLBDXKGM-UHFFFAOYSA-N (2,3-diethylphenyl)-phenylmethanediamine Chemical compound CCC1=CC=CC(C(N)(N)C=2C=CC=CC=2)=C1CC VOORKBJLBDXKGM-UHFFFAOYSA-N 0.000 description 3
- MNAHQWDCXOHBHK-UHFFFAOYSA-N 1-phenylpropane-1,1-diol Chemical compound CCC(O)(O)C1=CC=CC=C1 MNAHQWDCXOHBHK-UHFFFAOYSA-N 0.000 description 3
- 239000004475 Arginine Substances 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 3
- 239000004471 Glycine Substances 0.000 description 3
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 3
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 3
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 3
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 3
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 3
- 229960000310 isoleucine Drugs 0.000 description 3
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229960002429 proline Drugs 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229960004418 trolamine Drugs 0.000 description 3
- WXUAQHNMJWJLTG-UHFFFAOYSA-N 2-methylbutanedioic acid Chemical compound OC(=O)C(C)CC(O)=O WXUAQHNMJWJLTG-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- XJMMNTGIMDZPMU-UHFFFAOYSA-N 3-methylglutaric acid Chemical compound OC(=O)CC(C)CC(O)=O XJMMNTGIMDZPMU-UHFFFAOYSA-N 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- ZEYHEAKUIGZSGI-UHFFFAOYSA-N 4-methoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C=C1 ZEYHEAKUIGZSGI-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 2
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-ONCXSQPRSA-N abietic acid Chemical compound C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C(O)=O RSWGJHLUYNHPMX-ONCXSQPRSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- CUBCNYWQJHBXIY-UHFFFAOYSA-N benzoic acid;2-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC=C1.OC(=O)C1=CC=CC=C1O CUBCNYWQJHBXIY-UHFFFAOYSA-N 0.000 description 2
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 230000000254 damaging effect Effects 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- YAQXGBBDJYBXKL-UHFFFAOYSA-N iron(2+);1,10-phenanthroline;dicyanide Chemical compound [Fe+2].N#[C-].N#[C-].C1=CN=C2C3=NC=CC=C3C=CC2=C1.C1=CN=C2C3=NC=CC=C3C=CC2=C1 YAQXGBBDJYBXKL-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- ZWLPBLYKEWSWPD-UHFFFAOYSA-N o-toluic acid Chemical compound CC1=CC=CC=C1C(O)=O ZWLPBLYKEWSWPD-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229940067107 phenylethyl alcohol Drugs 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- ZDPHROOEEOARMN-UHFFFAOYSA-N undecanoic acid Chemical compound CCCCCCCCCCC(O)=O ZDPHROOEEOARMN-UHFFFAOYSA-N 0.000 description 2
- 229960000604 valproic acid Drugs 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- PAHUTFPWSUWSCR-BHPSOXLSSA-N (z)-2-methylbut-2-enedioic acid Chemical compound OC(=O)C(/C)=C\C(O)=O.OC(=O)C(/C)=C\C(O)=O PAHUTFPWSUWSCR-BHPSOXLSSA-N 0.000 description 1
- YZAZXIUFBCPZGB-QZOPMXJLSA-N (z)-octadec-9-enoic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O.CCCCCCCC\C=C/CCCCCCCC(O)=O YZAZXIUFBCPZGB-QZOPMXJLSA-N 0.000 description 1
- GRHFIPKABQYICC-UHFFFAOYSA-N 1,1'-biphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1.C1=CC=CC=C1C1=CC=CC=C1 GRHFIPKABQYICC-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- QPKNDHZQPGMLCJ-UHFFFAOYSA-N 1-(3-aminophenyl)ethanol Chemical compound CC(O)C1=CC=CC(N)=C1 QPKNDHZQPGMLCJ-UHFFFAOYSA-N 0.000 description 1
- YAXQOLYGKLGQKA-UHFFFAOYSA-N 1-morpholin-4-ylpropan-2-ol Chemical compound CC(O)CN1CCOCC1 YAXQOLYGKLGQKA-UHFFFAOYSA-N 0.000 description 1
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical compound CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- RIAJKLALLINDOP-UHFFFAOYSA-N 2-(2,4-dimethylheptyl)butanedioic acid Chemical compound CCCC(C)CC(C)CC(C(O)=O)CC(O)=O RIAJKLALLINDOP-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- SUSANQWSCSKXPF-UHFFFAOYSA-N 2-(2-methylpropoxy)benzoic acid Chemical compound CC(C)COC1=CC=CC=C1C(O)=O SUSANQWSCSKXPF-UHFFFAOYSA-N 0.000 description 1
- SMNNDVUKAKPGDD-UHFFFAOYSA-N 2-butylbenzoic acid Chemical compound CCCCC1=CC=CC=C1C(O)=O SMNNDVUKAKPGDD-UHFFFAOYSA-N 0.000 description 1
- TWJNQYPJQDRXPH-UHFFFAOYSA-N 2-cyanobenzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1C#N TWJNQYPJQDRXPH-UHFFFAOYSA-N 0.000 description 1
- XDZMPRGFOOFSBL-UHFFFAOYSA-N 2-ethoxybenzoic acid Chemical compound CCOC1=CC=CC=C1C(O)=O XDZMPRGFOOFSBL-UHFFFAOYSA-N 0.000 description 1
- WUWPVNVBYOKSSZ-UHFFFAOYSA-N 2-ethyl-2-methyl valeric ccid Chemical compound CCCC(C)(CC)C(O)=O WUWPVNVBYOKSSZ-UHFFFAOYSA-N 0.000 description 1
- LHJPKLWGGMAUAN-UHFFFAOYSA-N 2-ethyl-2-methyl-butanoic acid Chemical compound CCC(C)(CC)C(O)=O LHJPKLWGGMAUAN-UHFFFAOYSA-N 0.000 description 1
- KTCIQOVSDDBEIG-UHFFFAOYSA-N 2-ethyl-2-methylheptanoic acid Chemical compound CCCCCC(C)(CC)C(O)=O KTCIQOVSDDBEIG-UHFFFAOYSA-N 0.000 description 1
- LYIMSMCQBKXQDK-UHFFFAOYSA-N 2-ethyl-2-methylhexanoic acid Chemical compound CCCCC(C)(CC)C(O)=O LYIMSMCQBKXQDK-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical class [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- YCEOVSROCSOBPD-UHFFFAOYSA-N 2-methyl-2-propylheptanoic acid Chemical compound CCCCCC(C)(C(O)=O)CCC YCEOVSROCSOBPD-UHFFFAOYSA-N 0.000 description 1
- AQYCMVICBNBXNA-UHFFFAOYSA-N 2-methylglutaric acid Chemical compound OC(=O)C(C)CCC(O)=O AQYCMVICBNBXNA-UHFFFAOYSA-N 0.000 description 1
- GIEGKXINITVUOO-UHFFFAOYSA-N 2-methylidenebutanedioic acid Chemical compound OC(=O)CC(=C)C(O)=O.OC(=O)CC(=C)C(O)=O GIEGKXINITVUOO-UHFFFAOYSA-N 0.000 description 1
- SLAMLWHELXOEJZ-UHFFFAOYSA-N 2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1[N+]([O-])=O SLAMLWHELXOEJZ-UHFFFAOYSA-N 0.000 description 1
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 1
- WWPLDSOFBMZGIJ-UHFFFAOYSA-N 2-propan-2-yloxybenzoic acid Chemical compound CC(C)OC1=CC=CC=C1C(O)=O WWPLDSOFBMZGIJ-UHFFFAOYSA-N 0.000 description 1
- OXOWWPXTTOCKKU-UHFFFAOYSA-N 2-propoxybenzoic acid Chemical compound CCCOC1=CC=CC=C1C(O)=O OXOWWPXTTOCKKU-UHFFFAOYSA-N 0.000 description 1
- GADSJKKDLMALGL-UHFFFAOYSA-N 2-propylbenzoic acid Chemical compound CCCC1=CC=CC=C1C(O)=O GADSJKKDLMALGL-UHFFFAOYSA-N 0.000 description 1
- QBPCTCRGNMIUDV-UHFFFAOYSA-N 2-propylheptanedioic acid Chemical compound CCCC(C(O)=O)CCCCC(O)=O QBPCTCRGNMIUDV-UHFFFAOYSA-N 0.000 description 1
- KFIRODWJCYBBHY-UHFFFAOYSA-N 3-nitrophthalic acid Chemical compound OC(=O)C1=CC=CC([N+]([O-])=O)=C1C(O)=O KFIRODWJCYBBHY-UHFFFAOYSA-N 0.000 description 1
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 description 1
- PVNNOLUAMRODAC-UHFFFAOYSA-N 4-(ethylamino)butan-1-ol Chemical class CCNCCCCO PVNNOLUAMRODAC-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- DUAXLVGFFDFSAG-UHFFFAOYSA-N 4-amino-2-methylbutan-1-ol Chemical class OCC(C)CCN DUAXLVGFFDFSAG-UHFFFAOYSA-N 0.000 description 1
- PNWSHHILERSSLF-UHFFFAOYSA-N 4-methylbenzene-1,3-dicarboxylic acid Chemical compound CC1=CC=C(C(O)=O)C=C1C(O)=O PNWSHHILERSSLF-UHFFFAOYSA-N 0.000 description 1
- SUTWPJHCRAITLU-UHFFFAOYSA-N 6-aminohexan-1-ol Chemical compound NCCCCCCO SUTWPJHCRAITLU-UHFFFAOYSA-N 0.000 description 1
- OEOIWYCWCDBOPA-UHFFFAOYSA-N 6-methyl-heptanoic acid Chemical compound CC(C)CCCCC(O)=O OEOIWYCWCDBOPA-UHFFFAOYSA-N 0.000 description 1
- GUONUDPDDLXOPF-UHFFFAOYSA-N 7,9-diphenylhexadecanedioic acid Chemical compound C=1C=CC=CC=1C(CCCCCCC(=O)O)CC(CCCCCC(O)=O)C1=CC=CC=C1 GUONUDPDDLXOPF-UHFFFAOYSA-N 0.000 description 1
- PRDBHPGSMGDEGU-UHFFFAOYSA-N 7-methyltetradec-7-enedioic acid Chemical compound OC(=O)CCCCCC(C)=CCCCCCC(O)=O PRDBHPGSMGDEGU-UHFFFAOYSA-N 0.000 description 1
- IQWKYRKBHFUUKH-UHFFFAOYSA-N 8,13-dimethylicosanedioic acid Chemical compound OC(=O)CCCCCCC(C)CCCCC(C)CCCCCCC(O)=O IQWKYRKBHFUUKH-UHFFFAOYSA-N 0.000 description 1
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- YSGKLGSKOCLPDX-UHFFFAOYSA-N C(=O)O.C(C(C)C)C1=CC=CC=C1 Chemical compound C(=O)O.C(C(C)C)C1=CC=CC=C1 YSGKLGSKOCLPDX-UHFFFAOYSA-N 0.000 description 1
- ATRYGRLBRNIVRM-UHFFFAOYSA-N C(=O)O.C1(=CC=CC=C1)OCCCC Chemical compound C(=O)O.C1(=CC=CC=C1)OCCCC ATRYGRLBRNIVRM-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229920003656 Daiamid® Polymers 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229930182816 L-glutamine Natural products 0.000 description 1
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- 235000021360 Myristic acid Nutrition 0.000 description 1
- TUNFSRHWOTWDNC-UHFFFAOYSA-N Myristic acid Natural products CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 1
- XUYPXLNMDZIRQH-LURJTMIESA-N N-acetyl-L-methionine Chemical compound CSCC[C@@H](C(O)=O)NC(C)=O XUYPXLNMDZIRQH-LURJTMIESA-N 0.000 description 1
- MNDLNRWDFVTCQF-UHFFFAOYSA-N O1CCN(CC1)CCO.OCCN1CCOCC1 Chemical compound O1CCN(CC1)CCO.OCCN1CCOCC1 MNDLNRWDFVTCQF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- MCEBKLYUUDGVMD-UHFFFAOYSA-N [SiH3]S(=O)=O Chemical class [SiH3]S(=O)=O MCEBKLYUUDGVMD-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 229960000250 adipic acid Drugs 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 229960002255 azelaic acid Drugs 0.000 description 1
- HGRNRWNRNVPVMM-UHFFFAOYSA-N benzene-1,3-diol;benzoic acid Chemical compound OC1=CC=CC(O)=C1.OC(=O)C1=CC=CC=C1 HGRNRWNRNVPVMM-UHFFFAOYSA-N 0.000 description 1
- YENFKNKVJDTLGZ-UHFFFAOYSA-N benzoic acid ethyl benzoate Chemical compound OC(=O)C1=CC=CC=C1.CCOC(=O)C1=CC=CC=C1 YENFKNKVJDTLGZ-UHFFFAOYSA-N 0.000 description 1
- 229940000635 beta-alanine Drugs 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- GMVARPAQVYKXMQ-UHFFFAOYSA-N cyclohexanecarboxylic acid Chemical compound OC(=O)C1CCCCC1.OC(=O)C1CCCCC1 GMVARPAQVYKXMQ-UHFFFAOYSA-N 0.000 description 1
- OIDAQHJUOIRQJG-UHFFFAOYSA-N cyclopentanecarboxylic acid Chemical compound C1(CCCC1)C(=O)O.C1(CCCC1)C(=O)O OIDAQHJUOIRQJG-UHFFFAOYSA-N 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- GJBRTCPWCKRSTQ-UHFFFAOYSA-N decanedioic acid Chemical compound OC(=O)CCCCCCCCC(O)=O.OC(=O)CCCCCCCCC(O)=O GJBRTCPWCKRSTQ-UHFFFAOYSA-N 0.000 description 1
- HABLENUWIZGESP-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O.CCCCCCCCCC(O)=O HABLENUWIZGESP-UHFFFAOYSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- NIJJYAXOARWZEE-UHFFFAOYSA-N di-n-propyl-acetic acid Natural products CCCC(C(O)=O)CCC NIJJYAXOARWZEE-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- ZBAOLFGCQBCKOJ-UHFFFAOYSA-N ethanol 2-piperidin-1-ylethanol Chemical compound N1(CCCCC1)CCO.C(C)O ZBAOLFGCQBCKOJ-UHFFFAOYSA-N 0.000 description 1
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- UKFXDFUAPNAMPJ-UHFFFAOYSA-N ethylmalonic acid Chemical compound CCC(C(O)=O)C(O)=O UKFXDFUAPNAMPJ-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NKHAVTQWNUWKEO-UHFFFAOYSA-N fumaric acid monomethyl ester Natural products COC(=O)C=CC(O)=O NKHAVTQWNUWKEO-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229960002989 glutamic acid Drugs 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- BMXFPSYOCKSSBE-UHFFFAOYSA-N guanidine Chemical class NC(N)=N.NC(N)=N BMXFPSYOCKSSBE-UHFFFAOYSA-N 0.000 description 1
- XEUHNWODXVYLFD-UHFFFAOYSA-N heptanedioic acid Chemical compound OC(=O)CCCCCC(O)=O.OC(=O)CCCCCC(O)=O XEUHNWODXVYLFD-UHFFFAOYSA-N 0.000 description 1
- JLRBNGCMXSGALP-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O.CCCCCCC(O)=O JLRBNGCMXSGALP-UHFFFAOYSA-N 0.000 description 1
- KYYWBEYKBLQSFW-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCC(O)=O KYYWBEYKBLQSFW-UHFFFAOYSA-N 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- UJKDYMOBUGTJLZ-RUCXOUQFSA-N ksc605q1h Chemical compound OC(=O)[C@@H](N)CCC(O)=O.OC(=O)[C@@H](N)CCC(O)=O UJKDYMOBUGTJLZ-RUCXOUQFSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- NKHAVTQWNUWKEO-IHWYPQMZSA-N methyl hydrogen fumarate Chemical compound COC(=O)\C=C/C(O)=O NKHAVTQWNUWKEO-IHWYPQMZSA-N 0.000 description 1
- ZIYVHBGGAOATLY-UHFFFAOYSA-N methylmalonic acid Chemical compound OC(=O)C(C)C(O)=O ZIYVHBGGAOATLY-UHFFFAOYSA-N 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- GLTDLAUASUFHNK-UHFFFAOYSA-N n-silylaniline Chemical class [SiH3]NC1=CC=CC=C1 GLTDLAUASUFHNK-UHFFFAOYSA-N 0.000 description 1
- WHQDPSGUFIHZTE-UHFFFAOYSA-N naphthalen-2-ol Chemical group C1=CC=CC2=CC(O)=CC=C21.C1=CC=CC2=CC(O)=CC=C21 WHQDPSGUFIHZTE-UHFFFAOYSA-N 0.000 description 1
- BWSNYLWZGNCWIH-UHFFFAOYSA-N naphthalene Chemical compound C1=CC=CC2=CC=CC=C21.C1=CC=CC2=CC=CC=C21 BWSNYLWZGNCWIH-UHFFFAOYSA-N 0.000 description 1
- QVJXYCFQBBHRJN-UHFFFAOYSA-N nonadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCCC(O)=O QVJXYCFQBBHRJN-UHFFFAOYSA-N 0.000 description 1
- TWHMVKPVFOOAMY-UHFFFAOYSA-N octanedioic acid Chemical compound OC(=O)CCCCCCC(O)=O.OC(=O)CCCCCCC(O)=O TWHMVKPVFOOAMY-UHFFFAOYSA-N 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical group OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- QQVIHTHCMHWDBS-UHFFFAOYSA-N perisophthalic acid Natural products OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- ZFACJPAPCXRZMQ-UHFFFAOYSA-N phthalic acid Chemical group OC(=O)C1=CC=CC=C1C(O)=O.OC(=O)C1=CC=CC=C1C(O)=O ZFACJPAPCXRZMQ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000962 poly(amidoamine) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N propylene glycol Substances CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- RHHHGLCTQKINES-UHFFFAOYSA-M sodium;5-amino-2-methoxy-4-sulfobenzenesulfonate Chemical compound [Na+].COC1=CC(S(O)(=O)=O)=C(N)C=C1S([O-])(=O)=O RHHHGLCTQKINES-UHFFFAOYSA-M 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- KHOSIPSPBMXIRQ-UHFFFAOYSA-N tridecanoic acid Chemical compound CCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCC(O)=O KHOSIPSPBMXIRQ-UHFFFAOYSA-N 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- MSRILKIQRXUYCT-UHFFFAOYSA-M valproate semisodium Chemical compound [Na+].CCCC(C(O)=O)CCC.CCCC(C([O-])=O)CCC MSRILKIQRXUYCT-UHFFFAOYSA-M 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
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Abstract
本发明提供一种焊料连接性优异且适用于倒装芯片型半导体装置的无流动制法的胺硬化系环氧树脂组成物、以及一种使用该环氧树脂组成物制造的倒装芯片型半导体装置。本发明的液状环氧树脂组成物,其含有如下成分而成:(A)液状环氧树脂,(B)胺系硬化剂,(C)0.1~20重量份的含氮化合物,其是相对于(A)成分及(B)成分的总量100重量份,且含氮化合物是选自由3级胺的有机酸盐、氨基酸、亚氨基酸、具有醇性羟基的单氨基化合物所组成的群组中的至少一种,(D)50~900重量份的无机填充剂,其是相对于(A)液状环氧树脂为100重量份。
Description
技术领域
本发明关于一种可靠性及操作性优异且可使半导体装置的制造步骤简化的半导体密封用液状环氧树脂组成物以及一种用该环氧树脂组成物进行密封的半导体装置。
背景技术
近年来,随着半导体封装(package)的小型化、薄型化及轻量化,半导体芯片的高密度化较为显着。高密度半导体芯片的代表性封装法为,广泛进行倒装芯片(flip chip)封装。倒装芯片封装的代表性方法可列举,将半导体芯片的焊料电极与封装基板电路上的焊料凸点(solder bump)或焊盘(solder land)直接进行焊料接合的C4(Controlled Collapsed ChipConnect)工艺。接合后,为了保护连接部,可用环氧树脂密封半导体芯片与封装基板的缝隙。
在利用C4工艺的倒装芯片封装中,先前利用毛细流动(capillaryflow)法来进行树脂密封,但因为1)利用助焊剂(flux)进行焊料润湿性改善处理、2)焊料连接、3)助焊剂清洗、4)利用液状密封树脂的毛细管现象进行注入、5)树脂硬化等步骤较多,且树脂的注入也很费时间,所以存在生产性低的问题。特别是,随着焊垫(pad)的微细化、精细间距(fine-pitch)化,助焊剂的清洗除去性恶化,存在助焊剂残渣造成的密封树脂润湿性不良,或助焊剂残渣中的离子(ion)性杂质造成的半导体封装可靠性降低的问题,涉及助焊剂的技术性课题较多。
作为这些问题的对策,提出有如下无流动(noflow)法:在直接封装基板上涂布添加有助焊剂成分的密封树脂,将具备焊料电极的半导体芯片搭载在其上,通过回流焊(reflow)来同时进行焊料连接和树脂密封(美国专利5128746号公报)。
对应于无流动(noflow)法,提出有兼具助焊剂性能的各种组成物,例如有使用具有助焊剂性能的硬化剂者、将酚树脂(phenol resin)作为硬化剂者(日本专利特开2002-232123号公报)、将酚系羧酸(carboxylicacid)作为硬化剂者(日本专利特开2003-128874号公报)、将酸酐(acidanhydride)作为硬化剂者(日本专利特开2001-329048号公报、日本专利特开2003-160639号公报)、将羧酸作为硬化剂者(日本专利特开2002-293883号公报)、将芳香族羧酸酰肼(carboxylic acid hydrazide)作为硬化剂者(日本专利特开2004-303874号公报)。
另外,作为其他添加助焊剂成分者,已知有在酚系或者酸酐系硬化剂中添加羧酸(包含嵌段羧酸(block carboxylic acid))作为助焊剂成分者(例如日本专利特开2002-190497号公报、日本专利特开2003-82064号公报、日本专利特开2001-223227号公报)。
发明内容
上述组成物的硬化剂大多是酚系或者酸酐系。但是,一般而言,使用胺系硬化剂的粘合剂对各种基材相对的粘着性高,几乎不会产生从基板或芯片的界面剥离,且提供可靠性高的封装。在上述日本专利特开2002-293883号公报中研讨有胺加合物系硬化剂,但却得出无助焊剂性能的结果。因此,本发明的目的在于提供一种含有可在无流动法中使用的胺系硬化剂的粘合剂组成物。
本发明者们对上述课题进行积极研究,结果发现,通过将特定的含有氮化合物添加到使用有胺系硬化剂的环氧树脂组成物中,可获得可在无流动法中使用的半导体密封用环氧树脂组成物。
即,本发明是一种含有如下成分而成的液状环氧树脂组成物:
(A)液状环氧树脂,
(B)胺系硬化剂,(A)液状环氧树脂的环氧基量与(B)胺系硬化剂的活性氢量的比达到大于等于0.7、小于等于1.1,
(C)0.1~20重量份的含氮化合物,其是相对于(A)成分及(B)成分的总量100重量份,且含氮化合物是选自由3级胺的有机酸盐、氨基酸(amino acid)、亚氨基酸(imino acid)、具有醇性羟基(alcoholichydroxyl)的单氨基化合物所组成的群组中的至少一种,
(D)50~900重量份的无机填充剂,其是相对于100重量份(A)成分的环氧树脂。
进而,本发明是一种用于密封倒装芯片型半导体的上述液状环氧树脂组成物。另外,本发明提供一种含有上述液状环氧树脂组成物的硬化物的倒装芯片型半导体装置。
本发明的液状环氧树脂组成物不仅维持胺系硬化剂系的优异粘着性,而且利用特定的含氮化合物所表现的助焊剂性能,可在利用无流动法的倒装芯片型半导体装置制造中适当使用。因该含氮化合物不会与胺系硬化剂反应,所以组成物的适用期(pot life)长,而且也不会像酸系助焊剂成分一样损害电路的可靠性。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,并可依照说明书的内容予以实施,以下以本发明的较佳实施例并配合附图详细说明如后。
附图说明
图1是表示本发明的倒装芯片型半导体装置的剖面图。
1:有机基板 2:底部填充剂
3:焊垫 4:半导体芯片
5:凸点
具体实施方式
下面,对各成分加以说明。
[(A)液状环氧树脂]
环氧树脂是指,每一分子具有2个以上环氧基且在常温下为液状者。环氧树脂可使用先前众所周知者,其例如可列举,双酚A(bisphenol A)型环氧树脂、双酚AD型环氧树脂、双酚F型环氧树脂、萘(naphthalene)型环氧树脂、苯酚酚醛清漆(phenol novolac)型环氧树脂、联苯(biphenyl)型环氧树脂、缩水甘油胺(glycidyl amine)型环氧树脂、脂环式环氧树脂(cycloaliphatic epoxy resin)、二环戊二烯型环氧树脂等环氧树脂。上述环氧树脂可组合2种以上使用。这些之中,优选耐热性或耐湿性优异的双酚A型环氧树脂、双酚F型环氧树脂、双酚AD型环氧树脂、萘型环氧树脂。
该环氧树脂,来源于其合成过程中所使用的表氯醇(epichlorohydrin)的氯的总氯含量优选为小于等于1500ppm,特别优选为小于等于1000ppm。另外,在环氧树脂中添加等重量的离子交换水,在100℃、20小时的条件下进行萃取处理后水中氯浓度优选为小于等于10ppm。
[(B)胺系硬化剂]
本发明中所使用的胺系硬化剂是可与环氧树脂反应生成硬化物者,其具有至少2个以上的活性氨基。本发明的胺系硬化剂也可以是使用除了芳香族胺以外的脂肪族胺(aliphatic amine)、聚酰胺胺(polyamidoamine)、咪唑(imidazole)类、胍(guanidine)类等,但从粘着性、耐环境试验中的可靠性观点来看,优选是使用芳香族胺。
本发明中所使用的芳香族胺系硬化剂,例如优选3,3′-二乙基-4,4′-二氨基二苯基甲烷(3,3′-diethyl-4,4′-diaminodiphenylmethane)、3,3′,5,5′-四甲基-4,4′-二氨基二苯基甲烷、3,3′,5,5′-四乙基-4,4′-二氨基二苯基甲烷、2,4-二氨基甲苯、1,4-苯二胺、1,3-苯二胺等芳香族胺。这些芳香族胺系硬化剂既可单独使用1种,也可以混合使用2种以上。
上述胺系硬化剂在常温下为固体的情况下,优选预先与环氧树脂或者其他液状胺系硬化剂熔融混合。在环氧树脂中进行熔融混合时,希望以后述添加量,在70~150℃的温度范围内熔融混合1小时~2小时。如果混合温度不足70℃,则可能胺系硬化剂变得难以充分相熔,如果超过150℃的温度,则可能与环氧树脂反应而使粘度上升。另外,如果混合时间不足1小时,则可能胺系硬化剂不能充分相熔且导致粘度上升,如果混合时间超过2小时,则可能与环氧树脂反应而使粘度上升。与液状芳香族胺进行熔融混合的情况下希望在70~150℃的温度范围内熔融混合1小时~2小时。
此外,本发明中所使用的胺系硬化剂的总添加量,优选使液状环氧树脂的环氧基量与胺系硬化剂的活性氢量的比,即[(A)液状环氧树脂的环氧基量/(B)胺系硬化剂的活性氢量]达到大于等于0.7、小于等于1.1,更优选大于等于0.8、小于等于1.0。另外,在含有后述(E)成分的情况下,(E)成分为硅酮改性(silicone modification)环氧树脂时,(A)成分与(E)成分的环氧基总量、与(B)成分的活性氢量比,即[(A)成分的环氧基量+(E)成分的环氧基量]/[(B)成分的活性氢量]为0.7~1.1,优选0.8~1.0。另外,(E)成分为硅酮改性酚树脂时,(A)成分的环氧基量、与(B)成分的活性氢量及(E)成分的酚量的总量比,即[(A)成分的环氧基量]/[(B)成分的活性氢量+(E)成分的酚性羟基量]为0.7~1.1,优选0.8~1.0,上述的量比不足0.7时,可能残留有未反应的氨基或者酚性羟基,导致硬化物的玻璃转移温度(glass transition temperature)降低,另外对基盘的粘着强度降低。相反地,如果超过1.1,则可能硬化物会变得硬而脆,且在回流焊时产生龟裂(crack)。
[(C)含氮化合物]
本发明的组成物的含氮化合物,含有选自由3级胺的有机酸盐、氨基酸、亚氨基酸、具有醇性羟基的单氨基化合物所组成的群组中的至少一种。通过将这些与胺系硬化剂组合添加,可以获得表现助焊剂性能且保存稳定性优良的组成物。构成3级胺的有机酸盐的3级胺,例如可列举三-正丁胺、三-正辛胺、1,5-二氮杂双环(4,3,0)壬烯-5(DBN),1,8-二氮杂双环(5,4,0)十一烯-7(DBU)、N-甲基咪唑、N-甲基苯并咪唑等。
另外,有机酸,例如可列举:脂肪族单羧酸(aliphatic monocarboxylicacid),其例如己酸(caproic acid)、庚酸(enanthic acid)、辛酸(caprylicacid)、癸酸(capric acid)、十一酸(undecanoic acid)、十三酸(tridecanoic acid)、十四酸(myristic acid)、十五酸(pentadecanoicacid)、十六酸(palmitic acid)、十七酸(heptadecanoic acid)、十九酸(nonadecanoic acid)、二十酸(arachic acid)、异辛酸、丙基戊酸、乙基己酸、异癸酸、2,2-二甲基丁酸、2,2-二甲基戊酸、2,2-二甲基己酸、2,2-二甲基辛酸、2-甲基-2-乙基丁酸、2-甲基-2-乙基戊酸、2-甲基-2-乙基己酸、2-甲基-2-乙基庚酸、2-甲基-2-丙基戊酸、2-甲基-2-丙基己酸、2-甲基-2-丙基庚酸、辛酸(octylic acid)、辛烯酸(octene acid)、油酸(oleic acid)、环戊烷羧酸(cyclopentanecarboxylic acid)、环己烷羧酸(cyclohexane carboxylic acid)等;脂肪族聚羧酸(aliphaticpolycarboxylic acid),其例如草酸(oxalic acid)、丙二酸(malonicacid)、琥珀酸(succinic acid)、戊二酸(gluteric acid)、己二酸(adipicacid)、庚二酸(pimelic acid)、辛二酸(suberic acid)、壬二酸(azelaicacid)、癸二酸(sebacic acid)、甲基丙二酸、乙基丙二酸、甲基琥珀酸、乙基琥珀酸、2,2-二甲基琥珀酸、2,3-二甲基琥珀酸、2-甲基-戊二酸、3-甲基戊二酸、马来酸(maleic acid)、柠康酸(citraconic acid)、衣康酸(itaconic acid)、亚甲基戊二酸、马来酸单甲酯、1,5-辛烷二羧酸、5,6-癸烷二羧酸、1,7-癸烷二羧酸、4,6-二甲基-4-壬烯-1,2-二羧酸、4,6-二甲基-1,2-壬烷二羧酸、1,7-十二烷二羧酸、5-乙基-1,10-癸烷二羧酸、6-甲基-6-十二烯-1,12-二羧酸(6-methyl-6-dodecene-1,12-dicarboxylic acid)、6-甲基-1,12-十二烷二羧酸、6-乙烯基-1,12-十二烷二羧酸、6-乙基-1,12-十二烷二羧酸、7-甲基-7-十四烯-1,14-二羧酸、7-甲基-1,14-十四烷二羧酸、3-己基-4-癸烯-1,2-二羧酸、3-己基-1,2-癸烷二羧酸、6-乙烯基-9-十六烯-1,16-二羧酸、6-乙基-1,16-十六烷二羧酸、6-苯基-1,12-十二烷二羧酸、7,12-二甲基-7,11-十八碳二烯-1,18-二羧酸、7,12-二甲基-1,18-十八烷二羧酸、6,8-二苯基-1,14-十四烷二羧酸(6,8-diphenyl-1,14-tetradecane dicarboxylicacid)、1,1-环戊烷二羧酸、1,2-环戊烷二羧酸、1,1-环己烯二羧酸、1,2-环己烯二羧酸、4-环己烯-1,2-二羧酸、5-降冰片烯-2,3-二羧酸、苹果酸(malic acid)等;芳香族单羧酸(aromatic monocarboxylic acid),其例如苯甲酸、甲苯甲酸(toluic acid)、乙基苯甲酸(benzoic acid)、丙基苯甲酸、异丙基苯甲酸、丁基苯甲酸、异丁基苯甲酸、羟基苯甲酸、对甲氧基苯甲酸、乙氧基苯甲酸、丙氧基苯甲酸、异丙氧基苯甲酸、丁氧基苯甲酸、异丁氧基苯甲酸、硝基苯甲酸、间苯二酚苯甲酸等;芳香族聚羧酸,其例如邻苯二甲酸(phthalic acid)、硝基邻苯二甲酸、偏苯三甲酸等;苯酚化合物,其例如β-萘酚(β-naphthol)、邻硝基苯酚、对硝基苯酚、邻苯二酚、间苯二酚、4,4′-二羟基二苯基-2,2-丙烷、苯酚酚醛清漆、邻甲酚酚醛清漆(ortho cresol novolac)等。
3级胺及有机酸可以分别是2种以上的混合物。从树脂组成物的保存性更好的观点来看,优选使用含有DBU或DBN及与单羧酸的盐,进一步从容易获得易于添加的液状物的观点来看,优选使用含有DBU或DBN与脂肪族单羧酸的盐。
氨基酸是指1分子中具有至少1个羧基(-COOH)以及至少1个氨基(-NH2)的化合物,而亚氨基酸是指1分子中具有至少1个羧基及至少1个亚氨基(-NH-)的化合物,其皆被归类为广义的氨基酸。这些化合物与先前用作助焊剂成分的有机羧酸相比时,表现出具有同等水平以上的助焊剂性能。此外,氨基酸(亚氨基酸)中熔点高的比较多,可通过使其溶解在硬化剂等液状成分中来使用。
氨基酸(亚氨基酸)大致分为中性氨基酸、碱性氨基酸、酸性氨基酸、酸性氨基酸的酰胺。但这些之中,在使用中性氨基酸以及酸性氨基酸的酰胺的情况下,环氧树脂组成物的粘度变化非常小,可以获得优异的保存性。碱性氨基酸,可列举赖氨酸(lysine)、精氨酸(arginine);酸性氨基酸,可列举天冬酰胺酸(asparagine acid)、谷氨酸(glutamic acid);中性氨基酸,例如可列举异亮氨酸(isoleucine)、甘氨酸(glycine)、丙氨酸(alanine)、丝氨酸(serine)、甜菜碱(lycine)、谷酰胺(glutamine)、氨基苯甲酸、苯基丙氨酸;杂环亚氨基酸可列举脯氨酸(proline)等。因此,上述例中,优选使用异亮氨酸、甘氨酸、丙氨酸、丝氨酸、精氨酸、谷酰胺、氨基苯甲酸。
本发明中所使用的醇胺类是指,1分子中具有氨基(-NH2)、亚氨基(-NH-)或者被取代的氨基中任一个的醇类。如果是具有助焊剂性能者则可适于使用,优选使用沸点高或者蒸汽压低者,其在焊料连接或者树脂密封步骤中挥发而不会导致于树脂中产生孔隙。
醇胺(alcohol amine)类,例如可列举:3-氨基-1-丙醇(3-amino-1-propanol)、5-氨基-1-戊醇、6-氨基-1-己醇、N-甲基-二乙醇胺、三乙醇胺、4-氨基-2-甲基丁醇、2-(2-氨基乙氧基)乙醇、2-(2-氨基乙基氨基)乙醇、4-乙基氨基-1-丁醇、2-氨基-1-苯基乙醇、1-(3-氨基苯基)乙醇、3-氨基-2,2-二甲基-1-丙醇、2-氨基-2-甲基-1,3-丙二醇、2-氨基-2-乙基-1,3-丙二醇、N-(2-羟基乙基)吗啉(N-(2-hydroxyethyl)morpholine)、N-(2-羟基丙基)吗啉、1-哌嗪乙醇(1-piperazine ethanol)、1-哌啶乙醇(1-piperidine ethanol)、2-哌啶乙醇、4-哌啶乙醇等。优选使用2-氨基-2-甲基-1,3-丙二醇、2-氨基-1-苯基乙醇、三乙醇胺。
相对于(A)成分的环氧树脂及(B)成分的胺系硬化剂的总量100重量份,(C)含氮化合物的添加量为0.1~20重量份,优选1~10重量份。如果(C)含氮化合物的添加量不足0.1重量份,则不能获得充分的助焊剂性能,如果(C)含氮化合物的添加量超过20重量份,则可能会产生玻璃转移温度降低或粘着性降低等特性恶化。
在(C)含氮化合物于常温下为固体的情况下,特别是添加量较多的情况下,优选预先在液状环氧树脂或者液状胺系硬化剂中进行熔融混合。该混合优选在70~150℃的温度下进行1小时~2小时。氨基酸(亚氨基酸)中具有较高熔点的很多,对液状环氧树脂或者液状芳香族胺不熔解的情况很多。在这种情况下,粉碎处理后直接以固体状态进行添加即可。
[(D)无机填充剂]
无机填充剂可减小硬化物的膨胀系数。该硬化剂可以使用先前众所周知的各种无机填充剂,其例如可列举熔融二氧化硅、结晶二氧化硅、氧化铝、氧化钛、二氧化硅二氧化钛、氮化硼、氮化铝、氮化硅、氧化镁、硅酸镁、铝等,也可以组合使用这些的2种以上。其中,细球形(finespherical)的熔融二氧化硅因为低粘度化,所以较为理想。
无机填充剂因为可以强化与树脂的结合强度,所以优选以硅烷偶合剂、钛酸酯偶合剂等偶合剂预先进行表面处理。此种偶合剂,优选使用:γ-缩水甘油氧基丙基三甲氧基硅烷、γ-缩水甘油氧基丙基甲基二乙氧基硅烷、β-(3,4-环氧基环己基)乙基三甲氧基硅烷等环氧基硅烷,N-β(氨基乙基)-γ-氨基丙基三甲氧基硅烷、γ-氨基丙基三乙氧基硅烷、N-苯基-γ-氨基丙基三甲氧基硅烷等氨基硅烷,γ-巯基硅烷等巯基硅烷(mercapto silane)等硅烷偶合剂。此处使用于表面处理的偶合剂的添加量以及表面处理方法为众所周知的量及方法即可。
该情况下的无机填充剂的添加量,优选相对于100重量份环氧树脂添加50~900重量份,更优选在100~500重量份的范围内进行添加。如果不足50重量份时,可能膨胀系数较大,在冷热试验中诱发产生龟裂。如果超过900重量份,则可能粘度变高且易于产生孔隙、或者利用无机填充剂的焊料连接性降低。
本发明的环氧树脂组成物除上述各成分以外,可以在不损害本发明效果的范围内,视情况添加下述成分。
[(E)硅酮改性环氧树脂]
在本发明的液状环氧树脂组成物中,可以添加使硬化物的应力降低的硅酮改性环氧树脂作为低应力化剂。低应力化剂,可列举:粉末状、胶状、油状等的硅酮树脂;热可塑性树脂,例如液状的聚丁二烯橡胶、丙烯酸核壳树脂等,但优选硅酮改性环氧树脂。特别优选添加如下获得的硅酮改性环氧树脂:将以下述通式(1)~(4)所表示的含有烯基的环氧树脂或者含有烯基的树脂
(其中,R1为氢原子或者另外,R2为氢原子或甲基,X为氢原子或碳数1~6的一价烃基,n为0~50的整数,优选为1~20的整数,m为1~5的整数,特别优选1。)。
与以下述平均组成式(5)所表示的1分子中硅原子数为10~400、每分子的SiH基数为1~5的有机聚硅氧烷,进行众所周知的加成反应。
HaR3bSiO(4-a-b)/2 (5)
(其中,式中R3为取代或者非取代的一价烃基,a为0.01~0.1,b为1.8~2.2,1.81≤a+b≤2.3。)。
此外,作为R3的一价烃基,优选碳数为1~10者,特别优选1~8者,可列举:甲基、乙基、丙基、异丙基、丁基、异丁基、叔丁基、己基、辛基、癸基等烷基,乙烯基、烯丙基、丙烯基、丁烯基、己烯基等烯基,苯基、二甲苯基、甲苯基等芳基,苯甲基、苯乙基、苯丙基等芳烷基等,或者这些烃基的氢原子的一部分或全部以氯、氟、溴等卤素原子取代的氯甲基、溴乙基、三氟丙基等卤代一价烃基。
上述硅酮改性环氧树脂,优选下述结构(6)者。
(上述式中,R4为氢原子或碳数1~6的一价烃基R5为-CH2CH2CH2-、-OCH2-CH(OH)-CH2-O-CH2CH2CH2-或-O-CH2CH2CH2-。L为8~398,优选18~198的整数,p为1~10的整数,q为1~10的整数。)。
上述R4的碳数1~6、优选1~3的一价烃基,例如可列举:甲基、乙基、丙基、异丙基、丁基、叔丁基、戊基、己基等烷基;环戊基、环己基等环烷基;苯基等芳基;乙烯基、烯丙基等烯基,而在这些之中优选甲基。上述R4可以分别相同,也可以不同。
上述p及q分别为1~10,优选分别为1~5的整数。如果p及/或q超过10,则可能组成物的硬化物过硬、耐龟裂性或粘着性恶化、树脂的可靠性大为受损,所以并不优选。
上述L为8~398,优选18~198的整数,如果L不足8,则缓和应力的聚硅氧烷部分的比例变小,无法充分获得低应力化的效果,所以并不优选,如果L超过398,则分散性降低易于分离,不仅树脂的质量不稳定,而且不能充分获得低应力化的效果,所以并不优选。
(E)成分的添加量通过以相对于100重量份(A)成分的液状环氧树脂,含有小于等于20重量份,特别是2~15重量份的方式进行添加,可进一步降低应力。
[其他添加剂]
在本发明的液状环氧树脂组成物中,可在不损害本发明目的的范围内视情况添加硬化促进剂(hardening accelerator)、界面活性剂(interfacial active agent)、消泡剂(antifoam)、均化剂(levelingagent)、离子捕捉剂(ion trapping agent)、碳黑(carbon black)等颜料、染料及其他添加剂。
本发明的液状环氧树脂组成物,可通过将(A)液状环氧树脂、(B)胺系硬化剂、(C)含氮化合物、(D)无机填充剂、以及任意成分,同时或分别,视情况一边加热处理一边混合而得到。混合装置并无特别限制,可以使用具备搅拌、加热装置的擂溃机、三辊研磨机(three roll mill)、球磨机(ball mill)、行星式混合机(planetary mixer)等。另外也可以将这些装置加以适当组合后使用。
此外,本发明的液状环氧树脂组成物的粘度在25℃下优选为小于等于1,000Pa·s,特别优选为小于等于500Pa·s。另外,该组成物的成形方法、成形条件优选最初在100~120℃下加热约0.5小时,然后在150~175℃下加热0.5小时~4小时左右,以进行热风处理(hot cure)。通过最初的加热,可以切实防止硬化后产生孔隙。另外,如果在150~175℃下的加热不足0.5小时,则存在无法获得充分的硬化物特性的情况。
本发明中所使用的倒装芯片型半导体装置,例如如图1所示,通常为在有机基板1的布线图案面上的焊垫3上经多个凸点5而搭载有半导体芯片4者,在上述有机基板1与半导体芯片4的缝隙以及凸点5间的缝隙中填充有底部填充剂2。本发明的组成物在用作底部填充剂的情况下特别有效。
在使用本发明的液状环氧树脂组成物作为底部填充剂的情况下,优选该硬化物的玻璃转移温度以下的膨胀系数为20~40ppm/℃。
以下,根据实施例、比较例,具体说明本发明,但本发明并不限于这些。另外,只要没有预先说明,则%、份就分别表示重量百分比(wt%)、重量份。
使用下列物质。
(A)液状环氧树脂
环氧树脂(a)双酚F型环氧树脂:RE303S-L(日本化药股份有限公司制造,环氧当量:170)
环氧树脂(b)以下述式(7)所表示的3官能型环氧树脂:Epikote 630H(日本环氧树脂股份有限公司制造,环氧当量:101)
(B)硬化剂
芳香族胺硬化剂:二乙基二氨基二苯基甲烷(日本化药股份有限公司制造,Kayahard A-A,胺当量:63.5)
(C)含氮化合物
各编号对应于实施例的编号。
1.DBU的辛酸盐:U-CAT SA102(SAN-APRO Co.,Ltd制造)
2.DBN的辛酸盐:U-CAT 1102(SAN-APRO Co.,Ltd制造)
3.DBU的邻苯二甲酸盐(orthophthalate salt):U-CAT SA810(SAN-APRO Co.,Ltd制造)
4.3-氨基苯甲酸(东京化成工业股份有限公司制造),
5.β-丙氨酸(东京化成工业股份有限公司制造)
6.DL-脯氨酸(东京化成工业股份有限公司制造)
7.L-谷氨酸(东京化成工业股份有限公司制造)
8.L-谷酰胺(东京化成工业股份有限公司制造)
9.2-氨基-2-甲基-1,3-丙二醇(东京化成工业股份有限公司制造)
10.2-氨基-1-苯基乙醇(东京化成工业股份有限公司制造)
11.三乙醇胺(东京化成工业股份有限公司制造)
12.4-哌啶基乙醇
13.3-吗啉基-1,2-丙二醇
(D)无机填充剂
球状二氧化硅平均粒径2μm、最大粒径10μm的球状二氧化硅(龙森股份有限公司制造)
(E)硅酮改性环氧树脂
下述式(8)的化合物与下述式(9)的化合物的加成聚合物(重量平均分子量3800,环氧当量291)
其他添加剂
碳黑:Denka Black(电气化学工业股份有限公司制造)
硅烷偶合剂:γ-缩水甘油氧基丙基三甲氧基硅烷(信越化学工业股份有限公司制造,KBM403)
比较例中使用的化合物
各编号与比较例的编号对应。
1.松香酸(abietic acid)
2.水杨酸(salicylic acid)
3.甘油
4.1,6-己二醇
实施例1
将31.8重量份环氧树脂(a)、31.8重量份环氧树脂(b)、33重量份硬化剂二乙基二氨基二苯基甲烷、2重量份含氮化合物1、100重量份球状二氧化硅、4重量份硅酮改性环氧树脂、1重量份硅烷偶合剂、以及1重量份碳黑,以行星式混合机进行均匀混炼。然后,以三辊混炼机将固形原料充分进行混合分散,将得到的混合物进行真空脱泡处理后,获得液状环氧树脂组成物。
实施例2~13
除分别使用上述含氮化合物2~12代替含氮化合物1以外,与实施例1同样进行操作,获得组成物。此外,3-氨基苯甲酸(含氮化合物4)预先熔融添加到二乙基二氨基二苯基甲烷中,含氮化合物5~7在经过微粉碎处理后,直接以微粉固形状进行添加。
比较例1~5
在比较例1~4中,使用上述比较例中所使用的化合物1~4代替含氮化合物,比较例5中不添加任何物质,除此以外,与实施例1同样进行操作,制备组成物。此处,松香酸以及水杨酸在预先熔融添加到液状环氧树脂中后,与其他成分进行混合。
对于各实施例的液状环氧树脂组成物,使用以下方法进行特性评价。
(1)粘度
使用BH型旋转粘度计,以4rpm的旋转数来测定25℃时的粘度。
(2)保存性
在25℃/60%RH下将树脂组成物保存48小时,根据相对于初始粘度的粘度变化率,对适用期(可使用时间)进行如下评价。此外,粘度测定以上述条件实施。
A:相对于初始粘度的变化率不足30%,适用期良好。
B:相对于初始粘度的变化率为30~50%,适用期稍微存在问题。
C:相对于初始粘度的变化率超过100%,适用期短而不充分。
(3)粘着强度
在涂布有感光性聚酰亚胺的硅芯片上,使用模板形成上面直径为2mm、下面直径为5mm、高为3mm的圆锥体状树脂硬化物,以制成试验片。此外,试验片的成形条件为在120℃下硬化0.5小时然后在165℃下硬化3小时。硬化后,一边以0.2mm/sec的速度挤压获得的树脂硬化物的侧面一边测定,作为初始值。然后,将硬化的试验片放入PCT(高压蒸煮试验(pressurecooker test):121℃/2.1atm)中336小时后,测定粘着力。在任一情况下,试验片的片数都以5片进行,将其平均值记作粘着力。
(4)焊料连接性
使用倒装芯片型半导体芯片以及基板(4area/1chip,凸点数576个/1area,具备Sn-3.0Ag-0.5Cu焊料),以分配器装置在基板上涂布树脂组成物后,以倒装芯片接合机(flip chip bonder)装置搭载半导体芯片(焊料接合条件:260℃/3sec,荷重10N),在120℃下硬化0.5小时,然后在165℃下硬化3小时,制成倒装芯片型半导体试验片。对各树脂组成物,制成10片试验片(共计40area),数出确认导通的area数。
(5)孔隙
对上述焊料连接性评价中制成的倒装芯片型半导体试验片,使用超音波探伤装置,确认在树脂中产生孔隙的芯片数。
(6)剥离试验
对上述倒装芯片型半导体试验片中没有产生孔隙的10个,在30℃/65%RH/192小时放置后,以超音波探伤装置确认使其通过设定为最高温度265℃的IR回流焊炉5次后产生龟裂、剥离的芯片数。然后,放置在PCT(121℃/2.1atm)的环境下,确认336小时后产生龟裂、剥离的芯片数。
(7)温度循环试验
对上述倒装芯片型半导体试验片中没有产生孔隙的10个,在30℃/65%RH/192小时放置后,将-65℃/30分钟、150℃/30分钟作为1个周期,确认在250、500、750、1000周期后产生龟裂、剥离的芯片数。
将获得的结果示于表1及2。
比较例2及3因为产生孔隙者较多,所以不实施剥离试验以及温度循环试验。
如表1及2所示,各实施例的环氧树脂组成物的粘着性、焊料连接性优异,既不会产生孔隙,可靠性亦优异。另外,保存性虽然在使用酸性氨基酸的实施例7中存在一些缺陷,但是非常良好。另一方面,在使用羧酸作为助焊剂成分的比较例1及2的情况下,保存性差,特别是在使用水杨酸的比较例2的情况下,焊料连接性差,产生很多孔隙。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的结构及技术内容作出些许的更动或修饰为等同变化的等效实施例,但是凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。
Claims (9)
1.一种液状环氧树脂组成物,其特征在于包含:
(A)液状环氧树脂;
(B)胺系硬化剂,(A)液状环氧树脂的环氧基量与(B)胺系硬化剂的活性氢量的比达到大于等于0.7、小于等于1.1;
(C)0.1~20重量份的含氮化合物,其是相对于(A)成分及(B)成分的总量100重量份,且含氮化合物是选自由3级胺的有机酸盐、氨基酸、亚氨基酸及具有醇性羟基的单氨基化合物所组成的群组中的至少一种;以及
(D)50~900重量份的无机填充剂,其是相对于(A)液状环氧树脂为100重量份。
2.根据权利要求1所述的液状环氧树脂组成物,其特征在于:上述3级胺是选自由碳数2以上的烷基胺、1,5-二氮杂双环(4,3,0)壬烯-5、1,8-二氮杂双环(5,4,0)十一烯-7、以及N-甲基咪唑所组成的群组。
3.根据权利要求1所述的液状环氧树脂组成物,其特征在于:上述氨基酸为中性氨基酸。
4.根据权利要求1所述的液状环氧树脂组成物,其特征在于:上述亚氨基酸是选自杂环亚氨基酸。
5.根据权利要求1所述的液状环氧树脂组成物,其特征在于:上述具有醇性羟基的单氨基化合物是选自由C3~8的脂肪族或芳香族氨基醇、吗啉醇及哌啶醇所组成的群组。
6.根据权利要求1所述的液状环氧树脂组成物,其特征在于:(B)胺系硬化剂是芳香族胺。
8.根据权利要求1至7中任一项所述的液状环氧树脂组成物,其特征在于:其是倒装芯片型半导体密封用组成物。
9.一种倒装芯片型半导体装置,其特征在于:其含有根据权利要求8所述的液状环氧树脂组成物的硬化物。
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JP2005-336368 | 2005-11-21 | ||
JP2005-336469 | 2005-11-22 | ||
JP2005336469 | 2005-11-22 | ||
JP2005336469 | 2005-11-22 | ||
JP2006283060 | 2006-10-17 | ||
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TW200718749A (en) | 2007-05-16 |
CN1958663A (zh) | 2007-05-09 |
US20100001415A1 (en) | 2010-01-07 |
KR20070047217A (ko) | 2007-05-04 |
TWI385210B (zh) | 2013-02-11 |
US20070104959A1 (en) | 2007-05-10 |
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