CN1940146B - 匀平剂化合物 - Google Patents

匀平剂化合物 Download PDF

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Publication number
CN1940146B
CN1940146B CN2006101416221A CN200610141622A CN1940146B CN 1940146 B CN1940146 B CN 1940146B CN 2006101416221 A CN2006101416221 A CN 2006101416221A CN 200610141622 A CN200610141622 A CN 200610141622A CN 1940146 B CN1940146 B CN 1940146B
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CN
China
Prior art keywords
copper
levelling agent
metal
base material
weight
Prior art date
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Active
Application number
CN2006101416221A
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English (en)
Chinese (zh)
Other versions
CN1940146A (zh
Inventor
D·王
R·D·米克拉
G·G·巴克利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
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Rohm and Haas Electronic Materials LLC
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Publication of CN1940146A publication Critical patent/CN1940146A/zh
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L39/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/04Homopolymers or copolymers of ethene
    • C08L23/08Copolymers of ethene
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • C25D3/40Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/423Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Toxicology (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
CN2006101416221A 2005-09-30 2006-09-28 匀平剂化合物 Active CN1940146B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US72274705P 2005-09-30 2005-09-30
US60/722,747 2005-09-30

Publications (2)

Publication Number Publication Date
CN1940146A CN1940146A (zh) 2007-04-04
CN1940146B true CN1940146B (zh) 2010-05-12

Family

ID=37958663

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006101416221A Active CN1940146B (zh) 2005-09-30 2006-09-28 匀平剂化合物

Country Status (6)

Country Link
US (2) US8262891B2 (de)
EP (1) EP1798314B1 (de)
JP (1) JP4812582B2 (de)
KR (1) KR101295196B1 (de)
CN (1) CN1940146B (de)
TW (1) TWI328622B (de)

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US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
TWI328622B (en) 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds
JP4816901B2 (ja) * 2005-11-21 2011-11-16 上村工業株式会社 電気銅めっき浴
EP2161355A4 (de) 2007-05-21 2012-01-25 Uyemura C & Co Ltd Kupfergalvanisierungsbad
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US9260790B2 (en) 2007-12-18 2016-02-16 Integran Technologies Inc. Method for preparing polycrystalline structures having improved mechanical and physical properties
DE502008002080D1 (de) * 2008-06-02 2011-02-03 Autotech Deutschland Gmbh Pyrophosphathaltiges Bad zur cyanidfreien Abscheidung von Kupfer-Zinn-Legierungen
JP5525762B2 (ja) * 2008-07-01 2014-06-18 上村工業株式会社 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法
US8388824B2 (en) * 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
US9455139B2 (en) 2009-06-17 2016-09-27 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US9677188B2 (en) 2009-06-17 2017-06-13 Novellus Systems, Inc. Electrofill vacuum plating cell
US8962085B2 (en) 2009-06-17 2015-02-24 Novellus Systems, Inc. Wetting pretreatment for enhanced damascene metal filling
WO2011135673A1 (ja) * 2010-04-27 2011-11-03 荏原ユージライト株式会社 新規化合物およびその用途
TWI572750B (zh) 2010-05-24 2017-03-01 安頌股份有限公司 直通矽穿孔之銅充填
JP2012092366A (ja) * 2010-10-25 2012-05-17 Imec 銅の電着方法
JP5731802B2 (ja) * 2010-11-25 2015-06-10 ローム・アンド・ハース電子材料株式会社 金めっき液
KR101705734B1 (ko) * 2011-02-18 2017-02-14 삼성전자주식회사 구리 도금 용액 및 이것을 이용한 구리 도금 방법
US8454815B2 (en) * 2011-10-24 2013-06-04 Rohm And Haas Electronics Materials Llc Plating bath and method
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US9613833B2 (en) 2013-02-20 2017-04-04 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
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CN104005061B (zh) * 2014-06-05 2016-05-18 中节能太阳能科技有限公司 一种用于太阳能电池前电极电镀铜的负整平剂
US9758692B2 (en) 2014-07-25 2017-09-12 Tommie Copper Ip, Inc. Article with reactive metals bound to its surface and method of application
US9611560B2 (en) 2014-12-30 2017-04-04 Rohm And Haas Electronic Materials Llc Sulfonamide based polymers for copper electroplating
US9725816B2 (en) 2014-12-30 2017-08-08 Rohm And Haas Electronic Materials Llc Amino sulfonic acid based polymers for copper electroplating
US9783905B2 (en) 2014-12-30 2017-10-10 Rohm and Haas Electronic Mateirals LLC Reaction products of amino acids and epoxies
US9617648B2 (en) 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
US9870995B2 (en) * 2015-06-18 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Formation of copper layer structure with self anneal strain improvement
KR101657675B1 (ko) * 2015-09-25 2016-09-22 한국생산기술연구원 2종의 평탄제를 포함하는 전해 구리 도금용 유기첨가제 및 이를 포함하는 전해 구리 도금액
JP6733314B2 (ja) * 2015-09-29 2020-07-29 三菱マテリアル株式会社 高純度銅電解精錬用添加剤と高純度銅製造方法
EP3359709B1 (de) * 2015-10-08 2020-07-29 Rohm and Haas Electronic Materials LLC Kupfergalvanikbäder mit verbindungen von reaktionsprodukten von aminen und polyacrylamiden
KR101733141B1 (ko) * 2016-03-18 2017-05-08 한국생산기술연구원 고평탄 구리도금막 형성을 위한 전해 구리 도금용 유기첨가제 및 이를 포함하는 전해구리 도금액
CN107278058A (zh) * 2016-04-08 2017-10-20 东莞市斯坦得电子材料有限公司 一种用于印制线路板埋孔、盲孔填孔镀铜的工艺
KR101693586B1 (ko) * 2016-04-21 2017-01-06 한국생산기술연구원 2종의 평탄제를 포함하는 전해 구리 도금액을 이용한 전해 구리 도금 방법
KR101693597B1 (ko) * 2016-04-21 2017-01-06 한국생산기술연구원 2종의 평탄제를 포함하는 전해 구리 도금액을 이용한 전해 구리 도금 방법
KR101693595B1 (ko) * 2016-04-21 2017-01-17 한국생산기술연구원 2종의 평탄제를 포함하는 전해 구리 도금용 유기첨가제 및 이를 포함하는 전해 구리 도금액
KR101693588B1 (ko) * 2016-04-21 2017-01-17 한국생산기술연구원 2종의 평탄제를 포함하는 전해 구리 도금용 유기첨가제 및 이를 포함하는 전해 구리 도금액
KR102505102B1 (ko) * 2016-06-30 2023-03-03 솔브레인 주식회사 금속 도금 조성물 및 이를 이용한 금속 도금 방법
WO2018057490A1 (en) * 2016-09-22 2018-03-29 Macdermid Enthone Inc. Copper plating method and composition for semiconductor substrates
CN106757191B (zh) * 2016-11-23 2019-10-01 苏州昕皓新材料科技有限公司 一种具有高择优取向的铜晶体颗粒及其制备方法
US10718059B2 (en) * 2017-07-10 2020-07-21 Rohm And Haas Electronic Materials Llc Nickel electroplating compositions with cationic polymers and methods of electroplating nickel
US11377748B2 (en) * 2017-11-20 2022-07-05 Basf Se Composition for cobalt electroplating comprising leveling agent
JP6984352B2 (ja) * 2017-11-28 2021-12-17 東洋インキScホールディングス株式会社 積層体の製造方法、および積層体
KR102388225B1 (ko) * 2018-02-22 2022-04-18 코니카 미놀타 가부시키가이샤 패턴 형성 방법
CN111108234B (zh) * 2018-08-28 2023-11-17 株式会社杰希优 硫酸铜镀液和使用了其的硫酸铜镀敷方法
JP6899062B1 (ja) * 2020-05-18 2021-07-07 深▲せん▼市創智成功科技有限公司 Icボードのスルーホールを充填するための電気銅めっき液およびその電気めっき方法
CN114016094B (zh) * 2021-09-29 2022-11-18 深圳市励高表面处理材料有限公司 一种整平剂及其制备方法

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US5840170A (en) * 1992-11-30 1998-11-24 Gould Electronics Inc. Method for inhibiting the electrodeposition of organic particulate matter on copper foil
US6024857A (en) * 1997-10-08 2000-02-15 Novellus Systems, Inc. Electroplating additive for filling sub-micron features
CN1497069A (zh) * 2002-06-03 2004-05-19 希普雷公司 匀平剂化合物

Also Published As

Publication number Publication date
TW200716793A (en) 2007-05-01
EP1798314A1 (de) 2007-06-20
JP2007146285A (ja) 2007-06-14
US8262891B2 (en) 2012-09-11
CN1940146A (zh) 2007-04-04
TWI328622B (en) 2010-08-11
JP4812582B2 (ja) 2011-11-09
EP1798314B1 (de) 2011-08-24
US8506788B2 (en) 2013-08-13
KR101295196B1 (ko) 2013-08-12
US20070084732A1 (en) 2007-04-19
KR20070037349A (ko) 2007-04-04
US20130001088A1 (en) 2013-01-03

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