JP5851233B2 - 電解銅めっき液及び電解銅めっき方法 - Google Patents
電解銅めっき液及び電解銅めっき方法 Download PDFInfo
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- JP5851233B2 JP5851233B2 JP2011281470A JP2011281470A JP5851233B2 JP 5851233 B2 JP5851233 B2 JP 5851233B2 JP 2011281470 A JP2011281470 A JP 2011281470A JP 2011281470 A JP2011281470 A JP 2011281470A JP 5851233 B2 JP5851233 B2 JP 5851233B2
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- Prior art keywords
- electrolytic copper
- copper plating
- plating solution
- plating
- resin
- Prior art date
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- 238000007747 plating Methods 0.000 title claims description 151
- 239000010949 copper Substances 0.000 title claims description 79
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 75
- 229910052802 copper Inorganic materials 0.000 title claims description 75
- 238000000034 method Methods 0.000 title claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 18
- -1 cyclic amine compound Chemical class 0.000 claims description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- 125000004434 sulfur atom Chemical group 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- UIUJIQZEACWQSV-UHFFFAOYSA-N succinic semialdehyde Chemical compound OC(=O)CCC=O UIUJIQZEACWQSV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052783 alkali metal Chemical group 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 150000001340 alkali metals Chemical group 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 67
- 229920005989 resin Polymers 0.000 description 46
- 239000011347 resin Substances 0.000 description 46
- 229910052717 sulfur Inorganic materials 0.000 description 26
- 238000011049 filling Methods 0.000 description 19
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 18
- 229910000365 copper sulfate Inorganic materials 0.000 description 18
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 18
- 239000011593 sulfur Substances 0.000 description 18
- 125000001931 aliphatic group Chemical group 0.000 description 14
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- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
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- 229910001431 copper ion Inorganic materials 0.000 description 2
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
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- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 2
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- 238000001465 metallisation Methods 0.000 description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 2
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- NJZLKINMWXQCHI-UHFFFAOYSA-N sodium;3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical compound [Na].[Na].OS(=O)(=O)CCCSSCCCS(O)(=O)=O NJZLKINMWXQCHI-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09563—Metal filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/0959—Plated through-holes or plated blind vias filled with insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
- H05K3/427—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in metal-clad substrates
Description
すなわち、本発明は、−X−S−Y−構造(式中、XおよびYはそれぞれ独立して、水素原子、炭素原子、硫黄原子、窒素原子および酸素原子からなる群から選択される原子であり、XおよびYは炭素原子の場合のみ同一となりうる。)を有する化合物、および脂肪族セミアルデヒドを含む電解銅めっき液に関する。また、本発明は、前記電解銅めっき液を用いた電解銅めっき方法に関する。
(1) M−SO3−(CH2)a−S−(CH2)b−SO3−M;
(2) M−SO3−(CH2)a−O−CH2−S−CH2−O−(CH2)b−SO3−M;
(3) M−SO3−(CH2)a−S−S−(CH2)b−SO3−M;
(4) M−SO3−(CH2)a−O−CH2−S−S−CH2−O−(CH2)b−SO3−M;
(5) M−SO3−(CH2)a−S−C(=S)−S−(CH2)b−SO3−M;
(6) M−SO3−(CH2)a−O−CH2−S−C(=S)−S−CH2−O−(CH2)b−SO3−M;
(7) A−S−(CH2)a−SO3−M;および
(8) A−S−CH2−O−(CH2)a−SO3−M
上記、式(1)〜(8)においては、式中、a,b=3〜8の整数であり;Mは水素又はアルカリ金属元素であり;Aは水素原子、炭素数1〜10のアルキル基、アリール基、1〜6個の窒素原子と1〜20個の炭素原子と複数の水素原子とにより構成される鎖状または環状アミン化合物、または1〜2個の硫黄原子と1〜6個の窒素原子と1〜20個の炭素原子と複数の水素原子とにより構成される複素環化合物のいずれかである。
(9) HO−(CH2−CH2−O)a−H(式中、a=5〜500の整数である);
(10)HO−(CH2−CH(CH3)−O)a−H(式中、a=5〜200の整数である);
(11)HO−(CH2−CH2−O)a−(CH2−CH(CH3)−O)b−(CH2−CH2−O)c−H(式中、aおよびcは整数であって、a+c=5〜250の整数であり,b=1〜100の整数である);
(12)H−(NH2CH2CH2)n−H (式中、n=5〜500である。);
および
(13)
1.電気化学測定 (Galvanostatic analysis)
各種添加剤を含有する電解銅めっき液の性能をスクリーニングするために、電気化学測定を行った。下記組成の電解銅めっき液を調整し、模擬老化めっき液を再現するために前記めっき液にさらに3−メルカプト−1−プロパンスルホン酸ナトリウム塩(MPS/東京化成社製)を50ppbとなるように添加した。得られた模擬老化めっき液に電極(銅を被覆した、白金回転ディスク電極/PIN社製を電気をかけない状態で浸漬し、銅上の電位(自然電位)をポテンショ・ガルバノスタット((potentiostat/Galvanostat electrochemical analysis system)PGSTAT302/ECO CHEM社製))を用いて23℃、2500rpmの条件で測定した。測定によって得られる典型的な例を図1及び図2に示す。図1及び図2において、それぞれ横軸は時間(秒)、縦軸は電位(単位:V)である。図1の曲線は上から順に無添加(ベースライン)、効果の中程度のもの、効果の高いものを測定した結果である。一方図2はベースラインとほぼ同様の曲線を示しており、効果の低いことを示している。得られた結果を効果の高いものから順にA、B、Cランクに分類した。なお、Aランクは90秒後におおよそベースラインから40%未満の電位を示したもの、Bランクは同様におおよそ50から70%の電位を示したもの、Cランクは同様におおよそ90%以上の電位を示したものである。
硫酸銅・5水和物 200g/L
硫酸 100g/L
塩素 50mg/L
ビス(3−スルホプロピル)ジスルフィドジソーダ(SPS) 2mg/L
界面活性剤 2g/L
各種添加剤 表1及び表2記載量
残部 脱イオン水
前記スクリーニングで選別された添加剤に関して、ビアフィル性能評価を行った。非めっき物(基体)として(ビアフィル:平均直径100μm、深さ60μm/CMK社製)を用い、めっき液として下記組成の電解銅めっき液にさらにMPSを100ppbとなるように添加した模擬劣化めっき液を用いて、下記工程に従いビアフィルめっきを行った。めっき後のビアをビアに対して垂直面で切断し、切断面を金属顕微鏡(GX51/OLMPUS製)で観察した。
硫酸銅・5水和物 200g/L
硫酸 100g/L
塩素 50mg/L
ビス(3−スルホプロピル)ジスルフィドジソーダ(SPS) 2mg/L
界面活性剤 2g/L
各種添加剤 表1及び表2記載量
残部 脱イオン水
無電解めっき(キューポジット(登録商標)(CUPOSITTM)253/ロームアンドハース電子材料製,めっき条件: 35℃ 20分間)
酸洗浄(アシッドクリーナー(商標)(ACID CLEANERTM) 1022−B:10%/ロームアンドハース電子材料製、40℃/3分間)
水洗浄(30−40℃、1分間)
水洗浄(室温、1分間)
酸洗浄(10%硫酸、1分間)
電解銅めっき(各組成、22℃、電流密度:2A/dm、45分間)
水洗浄(室温、1分間)
防錆剤(アンチターニッシュ(商標)(ANTITARNISHTM)7130/ロームアンドハース電子材料製、10%、室温、30秒間)
水洗浄(室温、30秒間)
乾燥(ドライヤー乾燥:60℃、30秒間)
表1に示す添加剤を表1に示す量使用し、各種試験を行った。結果を表1に併記する。また、実施例1にてビアフィル試験を行った際の顕微鏡写真を図3に、実施例3にてビアフィル試験を行った際の顕微鏡写真を図4に示す。
表2に示す添加剤を表2に示す量使用し、各種試験を行った。結果を表2に併記する。また比較例1にてビアフィル試験を行った際の顕微鏡写真を図5に示す。
Claims (4)
- 下記式(1)〜(8)からなる群より選択される式を有する化合物、およびコハク酸セミアルデヒドを含む電解銅めっき液:
(1) M−SO 3 −(CH 2 ) a −S−(CH 2 ) b −SO 3 −M;
(2) M−SO 3 −(CH 2 ) a −O−CH 2 −S−CH 2 −O−(CH 2 ) b −SO 3 −M;
(3) M−SO 3 −(CH 2 ) a −S−S−(CH 2 ) b −SO 3 −M;
(4) M−SO 3 −(CH 2 ) a −O−CH 2 −S−S−CH 2 −O−(CH 2 ) b −SO 3 −M;
(5) M−SO 3 −(CH 2 ) a −S−C(=S)−S−(CH 2 ) b −SO 3 −M;
(6) M−SO 3 −(CH 2 ) a −O−CH 2 −S−C(=S)−S−CH 2 −O−(CH 2 ) b −SO 3 −M;
(7) A−S−(CH 2 ) a −SO 3 −M;
(8) A−S−CH 2 −O−(CH 2 ) a −SO 3 −M
(式(1)〜(8)中、aは3〜8の整数であり、bは3〜8の整数であり;Mは水素又はアルカリ金属元素であり;Aは水素原子であるか、炭素数1〜10のアルキル基であるか、アリール基であるか、1〜6個の窒素原子と1〜20個の炭素原子と複数の水素原子とにより構成される鎖状または環状アミン化合物であるか、または1〜2個の硫黄原子と1〜6個の窒素原子と1〜20個の炭素原子と複数の水素原子とにより構成される複素環化合物である。)。 - コハク酸セミアルデヒドが、電解銅めっき液中に1.0×10−4〜1.0×10−1mol/Lの量で存在することを特徴とする請求項1記載の電解銅めっき液。
- 請求項1または2に記載の電解銅めっき液を用いて基体を電解銅めっきする方法。
- 基体がスルーホールまたはビアホールを有する、請求項3記載の電解銅めっき方法。
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