CN1925321B - 集成电子器件及其制造方法 - Google Patents

集成电子器件及其制造方法 Download PDF

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Publication number
CN1925321B
CN1925321B CN2006101288079A CN200610128807A CN1925321B CN 1925321 B CN1925321 B CN 1925321B CN 2006101288079 A CN2006101288079 A CN 2006101288079A CN 200610128807 A CN200610128807 A CN 200610128807A CN 1925321 B CN1925321 B CN 1925321B
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CN
China
Prior art keywords
coil
substrate
electronic device
integrated electronic
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006101288079A
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English (en)
Chinese (zh)
Other versions
CN1925321A (zh
Inventor
宓晓宇
水野义博
松本刚
奥田久雄
上田知史
高桥岳雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Fujitsu Ltd
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Taiyo Yuden Co Ltd filed Critical Fujitsu Ltd
Publication of CN1925321A publication Critical patent/CN1925321A/zh
Application granted granted Critical
Publication of CN1925321B publication Critical patent/CN1925321B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2006101288079A 2005-08-31 2006-08-30 集成电子器件及其制造方法 Expired - Fee Related CN1925321B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005252596A JP4707056B2 (ja) 2005-08-31 2005-08-31 集積型電子部品および集積型電子部品製造方法
JP2005252596 2005-08-31
JP2005-252596 2005-08-31

Publications (2)

Publication Number Publication Date
CN1925321A CN1925321A (zh) 2007-03-07
CN1925321B true CN1925321B (zh) 2011-07-06

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Family Applications (1)

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CN2006101288079A Expired - Fee Related CN1925321B (zh) 2005-08-31 2006-08-30 集成电子器件及其制造方法

Country Status (5)

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US (2) US7948056B2 (enExample)
EP (1) EP1760731B1 (enExample)
JP (1) JP4707056B2 (enExample)
KR (1) KR100730672B1 (enExample)
CN (1) CN1925321B (enExample)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4842052B2 (ja) 2006-08-28 2011-12-21 富士通株式会社 インダクタ素子および集積型電子部品
GB2463806B (en) 2007-05-08 2012-07-18 Scanimetrics Inc Ultra high speed signal transmission/reception
JP5090118B2 (ja) * 2007-09-28 2012-12-05 太陽誘電株式会社 電子部品
JP2009088161A (ja) * 2007-09-28 2009-04-23 Fujitsu Media Device Kk 電子部品
JP5090117B2 (ja) 2007-09-28 2012-12-05 太陽誘電株式会社 電子部品
TWI397930B (zh) * 2007-11-06 2013-06-01 威盛電子股份有限公司 螺旋電感元件
JP5172287B2 (ja) * 2007-11-19 2013-03-27 株式会社東芝 集積回路装置
JP5058770B2 (ja) * 2007-12-12 2012-10-24 太陽誘電株式会社 電子部品
KR100922551B1 (ko) * 2007-12-26 2009-10-21 주식회사 동부하이텍 반도체 소자 및 그 제조방법
JP5133047B2 (ja) 2007-12-28 2013-01-30 太陽誘電株式会社 電子部品の製造方法
JP5154262B2 (ja) * 2008-02-26 2013-02-27 太陽誘電株式会社 電子部品
JP5133091B2 (ja) 2008-02-28 2013-01-30 太陽誘電株式会社 電子部品及びその製造方法
US20090236689A1 (en) * 2008-03-24 2009-09-24 Freescale Semiconductor, Inc. Integrated passive device and method with low cost substrate
JP4656196B2 (ja) 2008-07-11 2011-03-23 株式会社村田製作所 インダクタおよびフィルタ
US20110175602A1 (en) * 2009-12-23 2011-07-21 California Institute Of Technology Inductors with uniform magnetic field strength in the near-field
US9599591B2 (en) 2009-03-06 2017-03-21 California Institute Of Technology Low cost, portable sensor for molecular assays
US9439287B2 (en) 2009-03-09 2016-09-06 Nucurrent, Inc. Multi-layer wire structure for high efficiency wireless communication
US11476566B2 (en) 2009-03-09 2022-10-18 Nucurrent, Inc. Multi-layer-multi-turn structure for high efficiency wireless communication
US9444213B2 (en) 2009-03-09 2016-09-13 Nucurrent, Inc. Method for manufacture of multi-layer wire structure for high efficiency wireless communication
US9208942B2 (en) * 2009-03-09 2015-12-08 Nucurrent, Inc. Multi-layer-multi-turn structure for high efficiency wireless communication
US9300046B2 (en) 2009-03-09 2016-03-29 Nucurrent, Inc. Method for manufacture of multi-layer-multi-turn high efficiency inductors
EP4234001A3 (en) 2009-03-09 2023-10-18 NuCurrent, Inc. System and method for wireless power transfer in implantable medical devices
US9232893B2 (en) 2009-03-09 2016-01-12 Nucurrent, Inc. Method of operation of a multi-layer-multi-turn structure for high efficiency wireless communication
US9306358B2 (en) 2009-03-09 2016-04-05 Nucurrent, Inc. Method for manufacture of multi-layer wire structure for high efficiency wireless communication
JP5589313B2 (ja) * 2009-06-23 2014-09-17 富士通株式会社 集積型電子部品
KR101215303B1 (ko) * 2009-07-21 2012-12-26 한국전자통신연구원 엘티씨씨 인덕터를 포함하는 전자 장치
US9691544B2 (en) 2011-08-18 2017-06-27 Winchester Technologies, LLC Electrostatically tunable magnetoelectric inductors with large inductance tunability
US8378776B1 (en) * 2011-08-26 2013-02-19 National Semiconductor Corporation Semiconductor structure with galvanically-isolated signal and power paths
US20130140671A1 (en) * 2011-12-06 2013-06-06 Win Semiconductors Corp. Compound semiconductor integrated circuit with three-dimensionally formed components
US8552828B1 (en) * 2012-09-07 2013-10-08 Infineon Technologies Ag System and method for a coreless transformer
TWI649980B (zh) * 2013-03-08 2019-02-01 美商紐克倫有限公司 用於高效率無線通信之多層導線結構
TWI596915B (zh) * 2013-03-08 2017-08-21 紐克倫有限公司 用於高效率無線通信之多層多匝結構
FR3004289B1 (fr) * 2013-04-08 2015-05-15 Soitec Silicon On Insulator Composant a ondes acoustiques de surface et sa methode de fabrication
US9136822B2 (en) 2013-08-19 2015-09-15 Harris Corporation Microelectromechanical system with a micro-scale spring suspension system and methods for making the same
US9093975B2 (en) 2013-08-19 2015-07-28 Harris Corporation Microelectromechanical systems comprising differential inductors and methods for making the same
US9172352B2 (en) 2013-08-19 2015-10-27 Harris Corporation Integrated microelectromechanical system devices and methods for making the same
US9123493B2 (en) 2014-01-23 2015-09-01 Harris Corporation Microelectromechanical switches for steering of RF signals
US9343403B2 (en) * 2014-04-04 2016-05-17 Qualcomm Incorporated Stress mitigation structure for wafer warpage reduction
US10236115B2 (en) * 2014-06-16 2019-03-19 Stmicroelectronics S.R.L. Integrated transformer
US9583433B2 (en) 2015-02-25 2017-02-28 Qualcomm Incorporated Integrated device package comprising conductive sheet configured as an inductor in an encapsulation layer
US9960629B2 (en) 2015-08-07 2018-05-01 Nucurrent, Inc. Method of operating a single structure multi mode antenna for wireless power transmission using magnetic field coupling
US9948129B2 (en) 2015-08-07 2018-04-17 Nucurrent, Inc. Single structure multi mode antenna for wireless power transmission using magnetic field coupling having an internal switch circuit
US10063100B2 (en) 2015-08-07 2018-08-28 Nucurrent, Inc. Electrical system incorporating a single structure multimode antenna for wireless power transmission using magnetic field coupling
US9960628B2 (en) 2015-08-07 2018-05-01 Nucurrent, Inc. Single structure multi mode antenna having a single layer structure with coils on opposing sides for wireless power transmission using magnetic field coupling
US10636563B2 (en) 2015-08-07 2020-04-28 Nucurrent, Inc. Method of fabricating a single structure multi mode antenna for wireless power transmission using magnetic field coupling
US9941590B2 (en) 2015-08-07 2018-04-10 Nucurrent, Inc. Single structure multi mode antenna for wireless power transmission using magnetic field coupling having magnetic shielding
US10658847B2 (en) 2015-08-07 2020-05-19 Nucurrent, Inc. Method of providing a single structure multi mode antenna for wireless power transmission using magnetic field coupling
US9941729B2 (en) 2015-08-07 2018-04-10 Nucurrent, Inc. Single layer multi mode antenna for wireless power transmission using magnetic field coupling
US9941743B2 (en) 2015-08-07 2018-04-10 Nucurrent, Inc. Single structure multi mode antenna having a unitary body construction for wireless power transmission using magnetic field coupling
US11205848B2 (en) 2015-08-07 2021-12-21 Nucurrent, Inc. Method of providing a single structure multi mode antenna having a unitary body construction for wireless power transmission using magnetic field coupling
US10985465B2 (en) 2015-08-19 2021-04-20 Nucurrent, Inc. Multi-mode wireless antenna configurations
US9893048B2 (en) * 2015-09-14 2018-02-13 Qualcomm Incorporated Passive-on-glass (POG) device and method
WO2017188062A1 (ja) * 2016-04-25 2017-11-02 株式会社村田製作所 弾性波フィルタ装置およびマルチプレクサ
CN107545081A (zh) * 2016-06-24 2018-01-05 上海北京大学微电子研究院 一种rf螺旋电感高精度集总参数模型及参数提取方法
CN113937901A (zh) 2016-08-26 2022-01-14 纽卡润特有限公司 无线连接器系统
WO2018107037A1 (en) 2016-12-09 2018-06-14 Nucurrent, Inc. A substrate configured to facilitate through-metal energy transfer via near field magnetic coupling
US10958105B2 (en) 2017-02-13 2021-03-23 Nucurrent, Inc. Transmitting base with repeater
US11283295B2 (en) 2017-05-26 2022-03-22 Nucurrent, Inc. Device orientation independent wireless transmission system
JP6909060B2 (ja) 2017-06-08 2021-07-28 太陽誘電株式会社 電子部品
US10832848B2 (en) * 2017-06-26 2020-11-10 Qualcomm Incorporated Low DC resistance and high RF resistance power amplifier choke inductor
US10419128B2 (en) * 2017-07-19 2019-09-17 Axalume, Inc. Low-Q inductive-peaking optical front-end
JP7117725B2 (ja) * 2018-01-18 2022-08-15 株式会社ダイヘン インダクタ、インダクタを備えた装置及びインダクタの製造方法
JP7266996B2 (ja) 2018-11-20 2023-05-01 太陽誘電株式会社 インダクタ、フィルタおよびマルチプレクサ
US11227712B2 (en) 2019-07-19 2022-01-18 Nucurrent, Inc. Preemptive thermal mitigation for wireless power systems
US11271430B2 (en) 2019-07-19 2022-03-08 Nucurrent, Inc. Wireless power transfer system with extended wireless charging range
US11056922B1 (en) 2020-01-03 2021-07-06 Nucurrent, Inc. Wireless power transfer system for simultaneous transfer to multiple devices
JP7200956B2 (ja) * 2020-01-27 2023-01-10 株式会社村田製作所 インダクタ部品
US11283303B2 (en) 2020-07-24 2022-03-22 Nucurrent, Inc. Area-apportioned wireless power antenna for maximized charging volume
TWI766633B (zh) * 2020-11-18 2022-06-01 稜研科技股份有限公司 寬頻線極化天線結構
US11876386B2 (en) 2020-12-22 2024-01-16 Nucurrent, Inc. Detection of foreign objects in large charging volume applications
US11881716B2 (en) 2020-12-22 2024-01-23 Nucurrent, Inc. Ruggedized communication for wireless power systems in multi-device environments
US11695302B2 (en) 2021-02-01 2023-07-04 Nucurrent, Inc. Segmented shielding for wide area wireless power transmitter
US11831174B2 (en) 2022-03-01 2023-11-28 Nucurrent, Inc. Cross talk and interference mitigation in dual wireless power transmitter
US12003116B2 (en) 2022-03-01 2024-06-04 Nucurrent, Inc. Wireless power transfer system for simultaneous transfer to multiple devices with cross talk and interference mitigation
CN119207969A (zh) * 2023-06-25 2024-12-27 北京京东方传感技术有限公司 滤波器及其制备方法、电子设备

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US644309A (en) * 1898-10-20 1900-02-27 Albert White Knitting-machine.
JPH0461264A (ja) 1990-06-29 1992-02-27 Nippon Telegr & Teleph Corp <Ntt> Ｌｃ複合素子
JPH04290212A (ja) * 1991-03-18 1992-10-14 Murata Mfg Co Ltd 半導体装置
JPH05190333A (ja) * 1992-01-13 1993-07-30 Sharp Corp 重層型スパイラルインダクタ
JPH05335487A (ja) * 1992-05-28 1993-12-17 Rohm Co Ltd 伝送回路素子
JP3036233B2 (ja) * 1992-06-22 2000-04-24 松下電器産業株式会社 半導体装置およびその製造方法
JPH06334137A (ja) * 1993-05-20 1994-12-02 Hitachi Ltd ハイブリッド集積回路およびその製造方法
US5370766A (en) 1993-08-16 1994-12-06 California Micro Devices Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices
TW262595B (enExample) * 1993-11-17 1995-11-11 Ikeda Takeshi
US5629533A (en) 1995-02-06 1997-05-13 Motorola Optical sensor and method
KR100243658B1 (ko) * 1996-12-06 2000-02-01 정선종 기판 변환기술을 이용한 인덕터 소자 및 그 제조 방법
JPH10335590A (ja) * 1997-06-04 1998-12-18 Nec Corp 受動素子回路
JP3620623B2 (ja) * 1997-10-21 2005-02-16 富士電機デバイステクノロジー株式会社 平面型磁気素子
US6008102A (en) * 1998-04-09 1999-12-28 Motorola, Inc. Method of forming a three-dimensional integrated inductor
KR20000011585A (ko) * 1998-07-28 2000-02-25 윤덕용 반도체소자및그제조방법
US6885275B1 (en) * 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
US6303423B1 (en) * 1998-12-21 2001-10-16 Megic Corporation Method for forming high performance system-on-chip using post passivation process
JP2000306732A (ja) * 1999-04-22 2000-11-02 Ricoh Co Ltd インダクタおよびその製造方法
KR20010026587A (ko) * 1999-09-07 2001-04-06 구자홍 마이크로머신드 튠어블 필터 및 제조 방법
JP2002050519A (ja) * 2000-08-04 2002-02-15 Sony Corp 高周波コイル装置及びその製造方法
SE0004794L (sv) * 2000-12-22 2002-06-23 Ericsson Telefon Ab L M En flerskikts-symmetreringstransformatorstruktur
KR100368930B1 (ko) * 2001-03-29 2003-01-24 한국과학기술원 반도체 기판 위에 높이 떠 있는 3차원 금속 소자, 그 회로모델, 및 그 제조방법
JP3579000B2 (ja) * 2001-04-05 2004-10-20 シャープ株式会社 半導体装置
KR100576542B1 (ko) * 2001-08-07 2006-05-03 한국전자통신연구원 집적형 인덕터
CN100407573C (zh) * 2001-08-14 2008-07-30 皇家飞利浦电子股份有限公司 电子器件及测试和制造方法
JP2003109819A (ja) * 2001-09-28 2003-04-11 Toshiba Corp インダクタを有する半導体装置
KR100400234B1 (ko) * 2001-11-15 2003-10-01 삼성전자주식회사 송수신용 수동소자와 그 집적모듈
US6972635B2 (en) * 2002-02-26 2005-12-06 The Regents Of The University Of Michigan MEMS-based, computer systems, clock generation and oscillator circuits and LC-tank apparatus for use therein
JP2004213196A (ja) * 2002-12-27 2004-07-29 Fujikura Ltd 半導体モジュール、非接触ｉｃタグ、半導体モジュールの製造方法
JP2004260017A (ja) * 2003-02-26 2004-09-16 Tdk Corp 薄膜型コモンモードチョークコイル及びコモンモードチョークコイルアレイ
US7005751B2 (en) * 2003-04-10 2006-02-28 Formfactor, Inc. Layered microelectronic contact and method for fabricating same
EP1652264A1 (en) * 2003-07-28 2006-05-03 Philips Intellectual Property & Standards GmbH High frequency component
JP4762531B2 (ja) * 2004-11-30 2011-08-31 太陽誘電株式会社 電子部品及びその製造方法
TWI286454B (en) * 2005-03-09 2007-09-01 Phoenix Prec Technology Corp Electrical connector structure of circuit board and method for fabricating the same

Also Published As

Publication number Publication date
EP1760731A3 (en) 2013-11-27
US20110171806A1 (en) 2011-07-14
KR20070026027A (ko) 2007-03-08
JP2007067236A (ja) 2007-03-15
US20070045773A1 (en) 2007-03-01
EP1760731A2 (en) 2007-03-07
US8518789B2 (en) 2013-08-27
KR100730672B1 (ko) 2007-06-21
JP4707056B2 (ja) 2011-06-22
CN1925321A (zh) 2007-03-07
US7948056B2 (en) 2011-05-24
EP1760731B1 (en) 2015-04-01

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Owner name: FUJITSU LTD.

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Inventor after: Fu Xiaoyu

Inventor after: Mizuno Yasuhiro

Inventor after: Song Bengang

Inventor after: Okuda Hisao

Inventor after: Ueda Satoshi

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