CN1886798A - 具有交错的局部互连结构的存储单元阵列 - Google Patents
具有交错的局部互连结构的存储单元阵列 Download PDFInfo
- Publication number
- CN1886798A CN1886798A CNA2004800301978A CN200480030197A CN1886798A CN 1886798 A CN1886798 A CN 1886798A CN A2004800301978 A CNA2004800301978 A CN A2004800301978A CN 200480030197 A CN200480030197 A CN 200480030197A CN 1886798 A CN1886798 A CN 1886798A
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- 239000007924 injection Substances 0.000 claims description 17
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- 210000004027 cell Anatomy 0.000 description 53
- 238000004519 manufacturing process Methods 0.000 description 26
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- 239000012535 impurity Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910008065 Si-SiO Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910006405 Si—SiO Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
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- 150000004767 nitrides Chemical class 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 2
- 229910006249 ZrSi Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/685,044 US6911704B2 (en) | 2003-10-14 | 2003-10-14 | Memory cell array with staggered local inter-connect structure |
US10/685,044 | 2003-10-14 | ||
PCT/US2004/030415 WO2005038810A1 (en) | 2003-10-14 | 2004-09-16 | Memory cell array with staggered local inter-connect structure |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1886798A true CN1886798A (zh) | 2006-12-27 |
CN1886798B CN1886798B (zh) | 2010-04-28 |
Family
ID=34423082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800301978A Expired - Fee Related CN1886798B (zh) | 2003-10-14 | 2004-09-16 | 具有交错的局部互连结构的存储单元阵列 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6911704B2 (zh) |
EP (1) | EP1673781B1 (zh) |
JP (1) | JP2007528592A (zh) |
KR (1) | KR101012128B1 (zh) |
CN (1) | CN1886798B (zh) |
DE (1) | DE602004007815T2 (zh) |
TW (1) | TWI345241B (zh) |
WO (1) | WO2005038810A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100553147C (zh) * | 2007-04-25 | 2009-10-21 | 中国科学院半导体研究所 | 基于部分局部互连结构的fpga逻辑块 |
CN109087925A (zh) * | 2018-08-09 | 2018-12-25 | 京东方科技集团股份有限公司 | 阵列基板、x射线平板探测器及x射线探测方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7320934B2 (en) * | 2005-06-20 | 2008-01-22 | Infineon Technologies Ag | Method of forming a contact in a flash memory device |
US7462907B1 (en) * | 2005-11-07 | 2008-12-09 | Spansion Llc | Method of increasing erase speed in memory arrays |
EP2244306B1 (en) * | 2009-04-22 | 2014-05-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | A memory cell, an array, and a method for manufacturing a memory cell |
TWI514387B (zh) * | 2012-02-09 | 2015-12-21 | Macronix Int Co Ltd | 具有分段字線之熱輔助快閃記憶體 |
US9424129B2 (en) * | 2014-04-24 | 2016-08-23 | Seagate Technology Llc | Methods and systems including at least two types of non-volatile cells |
US10832765B2 (en) * | 2018-06-29 | 2020-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Variation tolerant read assist circuit for SRAM |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4281397A (en) | 1979-10-29 | 1981-07-28 | Texas Instruments Incorporated | Virtual ground MOS EPROM or ROM matrix |
US5440518A (en) * | 1991-06-12 | 1995-08-08 | Hazani; Emanuel | Non-volatile memory circuits, architecture and methods |
JP3212421B2 (ja) | 1993-09-20 | 2001-09-25 | 富士通株式会社 | 不揮発性半導体記憶装置 |
JP3564610B2 (ja) | 1994-07-26 | 2004-09-15 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
JP3456073B2 (ja) * | 1995-10-09 | 2003-10-14 | ソニー株式会社 | 不揮発性半導体記憶装置の製造方法 |
US5712179A (en) * | 1995-10-31 | 1998-01-27 | Sandisk Corporation | Method of making triple polysilicon flash EEPROM arrays having a separate erase gate for each row of floating gates |
JPH10321821A (ja) * | 1997-05-14 | 1998-12-04 | Sanyo Electric Co Ltd | 不揮発性半導体メモリおよびその動作方法 |
JP3583042B2 (ja) * | 1999-11-09 | 2004-10-27 | Necエレクトロニクス株式会社 | 半導体記憶装置 |
JP2002093165A (ja) * | 2000-09-18 | 2002-03-29 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6727545B2 (en) * | 2000-09-20 | 2004-04-27 | Silicon Storage Technology, Inc. | Semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling |
US6643159B2 (en) * | 2002-04-02 | 2003-11-04 | Hewlett-Packard Development Company, L.P. | Cubic memory array |
-
2003
- 2003-10-14 US US10/685,044 patent/US6911704B2/en not_active Expired - Fee Related
-
2004
- 2004-09-16 WO PCT/US2004/030415 patent/WO2005038810A1/en active IP Right Grant
- 2004-09-16 EP EP04784309A patent/EP1673781B1/en not_active Expired - Fee Related
- 2004-09-16 JP JP2006535499A patent/JP2007528592A/ja active Pending
- 2004-09-16 DE DE602004007815T patent/DE602004007815T2/de active Active
- 2004-09-16 KR KR1020067007269A patent/KR101012128B1/ko not_active IP Right Cessation
- 2004-09-16 CN CN2004800301978A patent/CN1886798B/zh not_active Expired - Fee Related
- 2004-10-12 TW TW093130836A patent/TWI345241B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100553147C (zh) * | 2007-04-25 | 2009-10-21 | 中国科学院半导体研究所 | 基于部分局部互连结构的fpga逻辑块 |
CN109087925A (zh) * | 2018-08-09 | 2018-12-25 | 京东方科技集团股份有限公司 | 阵列基板、x射线平板探测器及x射线探测方法 |
CN109087925B (zh) * | 2018-08-09 | 2020-11-13 | 京东方科技集团股份有限公司 | 阵列基板、x射线平板探测器及x射线探测方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101012128B1 (ko) | 2011-02-07 |
JP2007528592A (ja) | 2007-10-11 |
DE602004007815T2 (de) | 2008-04-17 |
US6911704B2 (en) | 2005-06-28 |
TWI345241B (en) | 2011-07-11 |
DE602004007815D1 (de) | 2007-09-06 |
CN1886798B (zh) | 2010-04-28 |
US20050077567A1 (en) | 2005-04-14 |
KR20070018802A (ko) | 2007-02-14 |
WO2005038810A1 (en) | 2005-04-28 |
TW200527447A (en) | 2005-08-16 |
EP1673781B1 (en) | 2007-07-25 |
EP1673781A1 (en) | 2006-06-28 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
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ASS | Succession or assignment of patent right |
Owner name: SPANSION CO.,LTD. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20070302 Owner name: SPANSION CO., LTD. Free format text: FORMER OWNER: SPANSION CO.,LTD. Effective date: 20070302 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20070302 Address after: California, USA Applicant after: SPANSION LLC Address before: California, USA Applicant before: Spanson Co. Effective date of registration: 20070302 Address after: California, USA Applicant after: Spanson Co. Address before: California, USA Applicant before: ADVANCED MICRO DEVICES, Inc. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160317 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: California, USA Patentee before: SPANSION LLC |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100428 Termination date: 20160916 |