DE602004007815D1 - Speicherzellenarray mit gestaffelter lokaler verbindungsstruktur - Google Patents

Speicherzellenarray mit gestaffelter lokaler verbindungsstruktur

Info

Publication number
DE602004007815D1
DE602004007815D1 DE602004007815T DE602004007815T DE602004007815D1 DE 602004007815 D1 DE602004007815 D1 DE 602004007815D1 DE 602004007815 T DE602004007815 T DE 602004007815T DE 602004007815 T DE602004007815 T DE 602004007815T DE 602004007815 D1 DE602004007815 D1 DE 602004007815D1
Authority
DE
Germany
Prior art keywords
cellararray
trunked
storage
connector structure
local connector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004007815T
Other languages
English (en)
Other versions
DE602004007815T2 (de
Inventor
Mark Randolph
Sameer Haddad
Timothy Thurgate
Richard Fastow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE602004007815D1 publication Critical patent/DE602004007815D1/de
Application granted granted Critical
Publication of DE602004007815T2 publication Critical patent/DE602004007815T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE602004007815T 2003-10-14 2004-09-16 Speicherzellenarray mit gestaffelter lokaler verbindungsstruktur Active DE602004007815T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US685044 1991-04-15
US10/685,044 US6911704B2 (en) 2003-10-14 2003-10-14 Memory cell array with staggered local inter-connect structure
PCT/US2004/030415 WO2005038810A1 (en) 2003-10-14 2004-09-16 Memory cell array with staggered local inter-connect structure

Publications (2)

Publication Number Publication Date
DE602004007815D1 true DE602004007815D1 (de) 2007-09-06
DE602004007815T2 DE602004007815T2 (de) 2008-04-17

Family

ID=34423082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004007815T Active DE602004007815T2 (de) 2003-10-14 2004-09-16 Speicherzellenarray mit gestaffelter lokaler verbindungsstruktur

Country Status (8)

Country Link
US (1) US6911704B2 (de)
EP (1) EP1673781B1 (de)
JP (1) JP2007528592A (de)
KR (1) KR101012128B1 (de)
CN (1) CN1886798B (de)
DE (1) DE602004007815T2 (de)
TW (1) TWI345241B (de)
WO (1) WO2005038810A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7320934B2 (en) * 2005-06-20 2008-01-22 Infineon Technologies Ag Method of forming a contact in a flash memory device
US7462907B1 (en) * 2005-11-07 2008-12-09 Spansion Llc Method of increasing erase speed in memory arrays
CN100553147C (zh) * 2007-04-25 2009-10-21 中国科学院半导体研究所 基于部分局部互连结构的fpga逻辑块
EP2244306B1 (de) * 2009-04-22 2014-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Speicherzelle, Anordnung und Verfahren zur Herstellung einer Speicherzelle
TWI514387B (zh) * 2012-02-09 2015-12-21 Macronix Int Co Ltd 具有分段字線之熱輔助快閃記憶體
US9424129B2 (en) * 2014-04-24 2016-08-23 Seagate Technology Llc Methods and systems including at least two types of non-volatile cells
US10832765B2 (en) * 2018-06-29 2020-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Variation tolerant read assist circuit for SRAM
CN109087925B (zh) * 2018-08-09 2020-11-13 京东方科技集团股份有限公司 阵列基板、x射线平板探测器及x射线探测方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281397A (en) 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
US5440518A (en) * 1991-06-12 1995-08-08 Hazani; Emanuel Non-volatile memory circuits, architecture and methods
JP3212421B2 (ja) 1993-09-20 2001-09-25 富士通株式会社 不揮発性半導体記憶装置
JP3564610B2 (ja) 1994-07-26 2004-09-15 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3456073B2 (ja) * 1995-10-09 2003-10-14 ソニー株式会社 不揮発性半導体記憶装置の製造方法
US5712179A (en) * 1995-10-31 1998-01-27 Sandisk Corporation Method of making triple polysilicon flash EEPROM arrays having a separate erase gate for each row of floating gates
JPH10321821A (ja) * 1997-05-14 1998-12-04 Sanyo Electric Co Ltd 不揮発性半導体メモリおよびその動作方法
JP3583042B2 (ja) * 1999-11-09 2004-10-27 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
JP2002093165A (ja) * 2000-09-18 2002-03-29 Mitsubishi Electric Corp 半導体記憶装置
US6727545B2 (en) * 2000-09-20 2004-04-27 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling
US6643159B2 (en) * 2002-04-02 2003-11-04 Hewlett-Packard Development Company, L.P. Cubic memory array

Also Published As

Publication number Publication date
WO2005038810A1 (en) 2005-04-28
DE602004007815T2 (de) 2008-04-17
CN1886798A (zh) 2006-12-27
EP1673781A1 (de) 2006-06-28
US20050077567A1 (en) 2005-04-14
EP1673781B1 (de) 2007-07-25
JP2007528592A (ja) 2007-10-11
US6911704B2 (en) 2005-06-28
TW200527447A (en) 2005-08-16
KR20070018802A (ko) 2007-02-14
KR101012128B1 (ko) 2011-02-07
TWI345241B (en) 2011-07-11
CN1886798B (zh) 2010-04-28

Similar Documents

Publication Publication Date Title
DE602005025144D1 (de) Erweiterbares rahmenwerk mit überlappenden verbindern
DE502005004089D1 (de) Steckverbinder
DE60336590D1 (de) Brennstoffzelle
DE602004032238D1 (de) Kombinations-batterie
DE60321264D1 (de) Antriebsstranglagerung
DE602005003245D1 (de) Steckverbinder mit Verriegelungsanordnung
DE602005003874D1 (de) Steckverbinder
DE602004000356T8 (de) Steckverbinder
DE502004011333D1 (de) Polyalkenamine mit verbesserten anwendungseigenschaften
DE602004020394D1 (de) Brennstoffzelle
DE502004011106D1 (de) 6-arylmethyl-substituierte pyrazolopyrimidine
DE60320649D1 (de) Datenspeicher mit beschränktem Zugang
DE602004025608D1 (de) Brennstoffzelle
DE602004023588D1 (de) Brennstoffzelle
DE602004026145D1 (de) Rippenstruktur
DE602004007815D1 (de) Speicherzellenarray mit gestaffelter lokaler verbindungsstruktur
DE502004002279D1 (de) Webschaft mit Mittelverbinder
DE60328921D1 (de) Kondom mit integriertem wulstaufbau
DE602004030501D1 (de) Brennstoffzelle
DE602004028858D1 (de) Brennstoffzellenseparator
DE602004005799D1 (de) Verbinder mit verbesserter Zuverlässigkeit
DE502004009741D1 (de) Lagersystem mit mehreren Lagerliften
DE502004007792D1 (de) Kabelspeicher
DE602005027476D1 (de) Mais mit verbesserter verdaulichkeit
DE602004014451D1 (de) Brennstoffzelle

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SU, US

8364 No opposition during term of opposition