CN1856840B - 非易失性存储器及其操作方法，和非易失性存储器系统 - Google Patents

非易失性存储器及其操作方法，和非易失性存储器系统 Download PDF

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Publication number
CN1856840B
CN1856840B CN2004800276800A CN200480027680A CN1856840B CN 1856840 B CN1856840 B CN 1856840B CN 2004800276800 A CN2004800276800 A CN 2004800276800A CN 200480027680 A CN200480027680 A CN 200480027680A CN 1856840 B CN1856840 B CN 1856840B
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China
Prior art keywords
memory
voltage
well structure
erase
unselected
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Expired - Lifetime
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CN2004800276800A
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English (en)
Chinese (zh)
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CN1856840A (zh
Inventor
汉德克尔·N·卡迪尔
劳尔-阿德里安·切尔内亚
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SanDisk Technologies LLC
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SanDisk Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data

Landscapes

  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Mechanical Pencils And Projecting And Retracting Systems Therefor, And Multi-System Writing Instruments (AREA)
CN2004800276800A 2003-09-25 2004-09-21 非易失性存储器及其操作方法，和非易失性存储器系统 Expired - Lifetime CN1856840B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/671,847 US6958936B2 (en) 2003-09-25 2003-09-25 Erase inhibit in non-volatile memories
US10/671,847 2003-09-25
PCT/US2004/031082 WO2005031753A1 (en) 2003-09-25 2004-09-21 Erase inhibit in non-volatile memories

Publications (2)

Publication Number Publication Date
CN1856840A CN1856840A (zh) 2006-11-01
CN1856840B true CN1856840B (zh) 2010-09-15

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CN2004800276800A Expired - Lifetime CN1856840B (zh) 2003-09-25 2004-09-21 非易失性存储器及其操作方法，和非易失性存储器系统

Country Status (9)

Country Link
US (2) US6958936B2 (enExample)
EP (1) EP1665282B1 (enExample)
JP (1) JP2007507055A (enExample)
KR (1) KR101062152B1 (enExample)
CN (1) CN1856840B (enExample)
AT (1) ATE418785T1 (enExample)
DE (1) DE602004018663D1 (enExample)
TW (1) TWI248618B (enExample)
WO (1) WO2005031753A1 (enExample)

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US6958936B2 (en) * 2003-09-25 2005-10-25 Sandisk Corporation Erase inhibit in non-volatile memories
KR100528482B1 (ko) * 2003-12-31 2005-11-15 삼성전자주식회사 데이타를 섹터 단위로 랜덤하게 입출력할 수 있는 플래시메모리 시스템
KR100582422B1 (ko) * 2004-05-15 2006-05-22 에스티마이크로일렉트로닉스 엔.브이. 낸드 플래시 메모리 소자
JP4709523B2 (ja) * 2004-10-14 2011-06-22 株式会社東芝 不揮発性半導体記憶装置
KR100749736B1 (ko) * 2005-06-13 2007-08-16 삼성전자주식회사 플래시 메모리 장치 및 그것의 소거 방법
US7495954B2 (en) * 2006-10-13 2009-02-24 Sandisk Corporation Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory
US7535766B2 (en) * 2006-10-13 2009-05-19 Sandisk Corporation Systems for partitioned soft programming in non-volatile memory
WO2008048798A1 (en) * 2006-10-13 2008-04-24 Sandisk Corporation Partitioned erase and erase verification in non-volatile memory
US7499317B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling
US7499338B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation Partitioned soft programming in non-volatile memory
JP2008117471A (ja) * 2006-11-02 2008-05-22 Toshiba Corp 不揮発性半導体記憶装置及び不揮発性メモリシステム
US7495958B2 (en) * 2006-11-06 2009-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Program and erase methods and structures for byte-alterable flash memory
KR100889780B1 (ko) * 2007-04-24 2009-03-20 삼성전자주식회사 패스 전압 윈도우를 향상시킬 수 있는 플래시 메모리 장치및 그것의 프로그램 방법
US7969783B2 (en) 2007-06-15 2011-06-28 Micron Technology, Inc. Memory with correlated resistance
KR101489885B1 (ko) * 2007-11-21 2015-02-06 삼성전자주식회사 개선된 신뢰성을 갖는 트랩형 비휘발성 메모리 장치 및 그동작 방법
KR20090061344A (ko) * 2007-12-11 2009-06-16 삼성전자주식회사 매트 구조를 가지는 반도체 메모리 장치
KR100938094B1 (ko) * 2008-03-14 2010-01-21 주식회사 하이닉스반도체 반도체 메모리 소자 및 이의 소거 방법
KR101503875B1 (ko) 2008-03-17 2015-03-25 삼성전자주식회사 단채널 효과를 억제할 수 있는 반도체 장치 및 그 제조방법
KR101407361B1 (ko) * 2008-04-14 2014-06-13 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
US7851846B2 (en) * 2008-12-03 2010-12-14 Silicon Storage Technology, Inc. Non-volatile memory cell with buried select gate, and method of making same
JP2011138579A (ja) * 2009-12-28 2011-07-14 Toshiba Corp 不揮発性半導体記憶装置
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
TWI462106B (zh) * 2012-05-07 2014-11-21 Macronix Int Co Ltd 藉由使用回復偏壓來減少記憶體中抹除干擾的方法與裝置
US9389999B2 (en) * 2012-08-17 2016-07-12 Infineon Technologies Ag System and method for emulating an EEPROM in a non-volatile memory device
KR102157863B1 (ko) 2014-09-01 2020-09-22 삼성전자주식회사 불 휘발성 메모리 장치
CN105575430B (zh) * 2014-10-11 2020-02-07 北京兆易创新科技股份有限公司 一种非易失性存储器的擦除方法
US9361990B1 (en) * 2014-12-18 2016-06-07 SanDisk Technologies, Inc. Time domain ramp rate control for erase inhibit in flash memory
US9318209B1 (en) 2015-03-24 2016-04-19 Sandisk Technologies Inc. Digitally controlled source side select gate offset in 3D NAND memory erase
CN105551524B (zh) * 2015-12-15 2019-10-18 北京兆易创新科技股份有限公司 一种存储单元的擦除方法
US10482968B1 (en) * 2018-11-22 2019-11-19 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. Local x-decoder and related memory system
US10748618B2 (en) * 2018-11-26 2020-08-18 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. Local X-decoder and related memory system with a voltage clamping transistor
US11288007B2 (en) * 2019-05-16 2022-03-29 Western Digital Technologies, Inc. Virtual physical erase of a memory of a data storage device
CN110364211B (zh) * 2019-06-18 2021-03-02 珠海博雅科技有限公司 一种减小非易失性存储器擦除干扰时间的方法、装置及设备
WO2022041032A1 (en) * 2020-08-27 2022-03-03 Yangtze Memory Technologies Co., Ltd. Erasing method for 3d nand flash memory
KR20230012697A (ko) * 2021-07-16 2023-01-26 에스케이하이닉스 주식회사 비휘발성 메모리 장치에 데이터를 삭제하기 위한 장치 및 방법

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JP3730508B2 (ja) * 2000-11-13 2006-01-05 株式会社東芝 半導体記憶装置およびその動作方法
US6731544B2 (en) 2001-05-14 2004-05-04 Nexflash Technologies, Inc. Method and apparatus for multiple byte or page mode programming of a flash memory array
US6958936B2 (en) * 2003-09-25 2005-10-25 Sandisk Corporation Erase inhibit in non-volatile memories

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EP1271553B1 (en) * 2001-06-27 2007-06-13 SanDisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory in multiple-data states

Also Published As

Publication number Publication date
TWI248618B (en) 2006-02-01
JP2007507055A (ja) 2007-03-22
ATE418785T1 (de) 2009-01-15
KR101062152B1 (ko) 2011-09-05
DE602004018663D1 (de) 2009-02-05
CN1856840A (zh) 2006-11-01
US6958936B2 (en) 2005-10-25
US7379346B2 (en) 2008-05-27
US20050068808A1 (en) 2005-03-31
US20060028876A1 (en) 2006-02-09
EP1665282A1 (en) 2006-06-07
WO2005031753A1 (en) 2005-04-07
TW200532698A (en) 2005-10-01
EP1665282B1 (en) 2008-12-24
KR20060119988A (ko) 2006-11-24

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