JP2007507055A - 不揮発性メモリにおける消去禁止 - Google Patents

不揮発性メモリにおける消去禁止 Download PDF

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Publication number
JP2007507055A
JP2007507055A JP2006528138A JP2006528138A JP2007507055A JP 2007507055 A JP2007507055 A JP 2007507055A JP 2006528138 A JP2006528138 A JP 2006528138A JP 2006528138 A JP2006528138 A JP 2006528138A JP 2007507055 A JP2007507055 A JP 2007507055A
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JP
Japan
Prior art keywords
control gate
well structure
voltage
erase voltage
erase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006528138A
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English (en)
Japanese (ja)
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JP2007507055A5 (enExample
Inventor
クアデール，カハンドカー　エヌ．
セルニア，ラウル−エイドリアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of JP2007507055A publication Critical patent/JP2007507055A/ja
Publication of JP2007507055A5 publication Critical patent/JP2007507055A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
JP2006528138A 2003-09-25 2004-09-21 不揮発性メモリにおける消去禁止 Pending JP2007507055A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/671,847 US6958936B2 (en) 2003-09-25 2003-09-25 Erase inhibit in non-volatile memories
PCT/US2004/031082 WO2005031753A1 (en) 2003-09-25 2004-09-21 Erase inhibit in non-volatile memories

Publications (2)

Publication Number Publication Date
JP2007507055A true JP2007507055A (ja) 2007-03-22
JP2007507055A5 JP2007507055A5 (enExample) 2007-10-11

Family

ID=34376203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006528138A Pending JP2007507055A (ja) 2003-09-25 2004-09-21 不揮発性メモリにおける消去禁止

Country Status (9)

Country Link
US (2) US6958936B2 (enExample)
EP (1) EP1665282B1 (enExample)
JP (1) JP2007507055A (enExample)
KR (1) KR101062152B1 (enExample)
CN (1) CN1856840B (enExample)
AT (1) ATE418785T1 (enExample)
DE (1) DE602004018663D1 (enExample)
TW (1) TWI248618B (enExample)
WO (1) WO2005031753A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011138579A (ja) * 2009-12-28 2011-07-14 Toshiba Corp 不揮発性半導体記憶装置

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CA2717218C (en) * 2001-06-06 2014-05-27 The Chamberlain Group, Inc. Improved method, system and apparatus for opening doors
US6958936B2 (en) * 2003-09-25 2005-10-25 Sandisk Corporation Erase inhibit in non-volatile memories
KR100528482B1 (ko) * 2003-12-31 2005-11-15 삼성전자주식회사 데이타를 섹터 단위로 랜덤하게 입출력할 수 있는 플래시메모리 시스템
KR100582422B1 (ko) * 2004-05-15 2006-05-22 에스티마이크로일렉트로닉스 엔.브이. 낸드 플래시 메모리 소자
JP4709523B2 (ja) * 2004-10-14 2011-06-22 株式会社東芝 不揮発性半導体記憶装置
KR100749736B1 (ko) * 2005-06-13 2007-08-16 삼성전자주식회사 플래시 메모리 장치 및 그것의 소거 방법
US7495954B2 (en) * 2006-10-13 2009-02-24 Sandisk Corporation Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory
US7535766B2 (en) * 2006-10-13 2009-05-19 Sandisk Corporation Systems for partitioned soft programming in non-volatile memory
WO2008048798A1 (en) * 2006-10-13 2008-04-24 Sandisk Corporation Partitioned erase and erase verification in non-volatile memory
US7499317B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling
US7499338B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation Partitioned soft programming in non-volatile memory
JP2008117471A (ja) * 2006-11-02 2008-05-22 Toshiba Corp 不揮発性半導体記憶装置及び不揮発性メモリシステム
US7495958B2 (en) * 2006-11-06 2009-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Program and erase methods and structures for byte-alterable flash memory
KR100889780B1 (ko) * 2007-04-24 2009-03-20 삼성전자주식회사 패스 전압 윈도우를 향상시킬 수 있는 플래시 메모리 장치및 그것의 프로그램 방법
US7969783B2 (en) 2007-06-15 2011-06-28 Micron Technology, Inc. Memory with correlated resistance
KR101489885B1 (ko) * 2007-11-21 2015-02-06 삼성전자주식회사 개선된 신뢰성을 갖는 트랩형 비휘발성 메모리 장치 및 그동작 방법
KR20090061344A (ko) * 2007-12-11 2009-06-16 삼성전자주식회사 매트 구조를 가지는 반도체 메모리 장치
KR100938094B1 (ko) * 2008-03-14 2010-01-21 주식회사 하이닉스반도체 반도체 메모리 소자 및 이의 소거 방법
KR101503875B1 (ko) 2008-03-17 2015-03-25 삼성전자주식회사 단채널 효과를 억제할 수 있는 반도체 장치 및 그 제조방법
KR101407361B1 (ko) * 2008-04-14 2014-06-13 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
US7851846B2 (en) * 2008-12-03 2010-12-14 Silicon Storage Technology, Inc. Non-volatile memory cell with buried select gate, and method of making same
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
TWI462106B (zh) * 2012-05-07 2014-11-21 Macronix Int Co Ltd 藉由使用回復偏壓來減少記憶體中抹除干擾的方法與裝置
US9389999B2 (en) * 2012-08-17 2016-07-12 Infineon Technologies Ag System and method for emulating an EEPROM in a non-volatile memory device
KR102157863B1 (ko) 2014-09-01 2020-09-22 삼성전자주식회사 불 휘발성 메모리 장치
CN105575430B (zh) * 2014-10-11 2020-02-07 北京兆易创新科技股份有限公司 一种非易失性存储器的擦除方法
US9361990B1 (en) * 2014-12-18 2016-06-07 SanDisk Technologies, Inc. Time domain ramp rate control for erase inhibit in flash memory
US9318209B1 (en) 2015-03-24 2016-04-19 Sandisk Technologies Inc. Digitally controlled source side select gate offset in 3D NAND memory erase
CN105551524B (zh) * 2015-12-15 2019-10-18 北京兆易创新科技股份有限公司 一种存储单元的擦除方法
US10482968B1 (en) * 2018-11-22 2019-11-19 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. Local x-decoder and related memory system
US10748618B2 (en) * 2018-11-26 2020-08-18 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. Local X-decoder and related memory system with a voltage clamping transistor
US11288007B2 (en) * 2019-05-16 2022-03-29 Western Digital Technologies, Inc. Virtual physical erase of a memory of a data storage device
CN110364211B (zh) * 2019-06-18 2021-03-02 珠海博雅科技有限公司 一种减小非易失性存储器擦除干扰时间的方法、装置及设备
WO2022041032A1 (en) * 2020-08-27 2022-03-03 Yangtze Memory Technologies Co., Ltd. Erasing method for 3d nand flash memory
KR20230012697A (ko) * 2021-07-16 2023-01-26 에스케이하이닉스 주식회사 비휘발성 메모리 장치에 데이터를 삭제하기 위한 장치 및 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11177071A (ja) * 1997-12-11 1999-07-02 Toshiba Corp 不揮発性半導体記憶装置
JP2002150782A (ja) * 2000-11-13 2002-05-24 Toshiba Corp 半導体記憶装置およびその動作方法

Family Cites Families (5)

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TW439293B (en) 1999-03-18 2001-06-07 Toshiba Corp Nonvolatile semiconductor memory
JP3863330B2 (ja) 1999-09-28 2006-12-27 株式会社東芝 不揮発性半導体メモリ
US6731544B2 (en) 2001-05-14 2004-05-04 Nexflash Technologies, Inc. Method and apparatus for multiple byte or page mode programming of a flash memory array
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6958936B2 (en) * 2003-09-25 2005-10-25 Sandisk Corporation Erase inhibit in non-volatile memories

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11177071A (ja) * 1997-12-11 1999-07-02 Toshiba Corp 不揮発性半導体記憶装置
JP2002150782A (ja) * 2000-11-13 2002-05-24 Toshiba Corp 半導体記憶装置およびその動作方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011138579A (ja) * 2009-12-28 2011-07-14 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
CN1856840B (zh) 2010-09-15
TWI248618B (en) 2006-02-01
ATE418785T1 (de) 2009-01-15
KR101062152B1 (ko) 2011-09-05
DE602004018663D1 (de) 2009-02-05
CN1856840A (zh) 2006-11-01
US6958936B2 (en) 2005-10-25
US7379346B2 (en) 2008-05-27
US20050068808A1 (en) 2005-03-31
US20060028876A1 (en) 2006-02-09
EP1665282A1 (en) 2006-06-07
WO2005031753A1 (en) 2005-04-07
TW200532698A (en) 2005-10-01
EP1665282B1 (en) 2008-12-24
KR20060119988A (ko) 2006-11-24

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