CN1856834A - 面积有效的电荷泵 - Google Patents
面积有效的电荷泵 Download PDFInfo
- Publication number
- CN1856834A CN1856834A CNA2004800278897A CN200480027889A CN1856834A CN 1856834 A CN1856834 A CN 1856834A CN A2004800278897 A CNA2004800278897 A CN A2004800278897A CN 200480027889 A CN200480027889 A CN 200480027889A CN 1856834 A CN1856834 A CN 1856834A
- Authority
- CN
- China
- Prior art keywords
- voltage
- vcc
- clock signal
- signal
- phase place
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 104
- 230000000295 complement effect Effects 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 11
- 238000007599 discharging Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Steroid Compounds (AREA)
- Peptides Or Proteins (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/636,839 | 2003-08-07 | ||
US10/636,839 US6922096B2 (en) | 2003-08-07 | 2003-08-07 | Area efficient charge pump |
PCT/US2004/024064 WO2005017902A1 (en) | 2003-08-07 | 2004-07-27 | Area efficient charge pump |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1856834A true CN1856834A (zh) | 2006-11-01 |
CN1856834B CN1856834B (zh) | 2011-09-07 |
Family
ID=34116483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800278897A Expired - Fee Related CN1856834B (zh) | 2003-08-07 | 2004-07-27 | 面积有效的电荷泵 |
Country Status (9)
Country | Link |
---|---|
US (2) | US6922096B2 (zh) |
EP (1) | EP1652189B8 (zh) |
JP (1) | JP4768614B2 (zh) |
KR (1) | KR101039236B1 (zh) |
CN (1) | CN1856834B (zh) |
AT (1) | ATE373308T1 (zh) |
DE (1) | DE602004008935T2 (zh) |
TW (1) | TWI266170B (zh) |
WO (1) | WO2005017902A1 (zh) |
Families Citing this family (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6734718B1 (en) * | 2002-12-23 | 2004-05-11 | Sandisk Corporation | High voltage ripple reduction |
US7397299B2 (en) * | 2004-12-28 | 2008-07-08 | The Hong Kong University Of Science And Technology | N-stage exponential charge pumps, charging stages therefor and methods of operation thereof |
US20070126494A1 (en) * | 2005-12-06 | 2007-06-07 | Sandisk Corporation | Charge pump having shunt diode for improved operating efficiency |
US7372320B2 (en) * | 2005-12-16 | 2008-05-13 | Sandisk Corporation | Voltage regulation with active supplemental current for output stabilization |
US20070139099A1 (en) * | 2005-12-16 | 2007-06-21 | Sandisk Corporation | Charge pump regulation control for improved power efficiency |
US20070229149A1 (en) * | 2006-03-30 | 2007-10-04 | Sandisk Corporation | Voltage regulator having high voltage protection |
US7554311B2 (en) * | 2006-07-31 | 2009-06-30 | Sandisk Corporation | Hybrid charge pump regulation |
US7368979B2 (en) | 2006-09-19 | 2008-05-06 | Sandisk Corporation | Implementation of output floating scheme for hv charge pumps |
US20080068068A1 (en) * | 2006-09-19 | 2008-03-20 | Sridhar Yadala | Method and system for charge pumps |
US7440342B2 (en) | 2006-12-29 | 2008-10-21 | Sandisk Corporation | Unified voltage generation method with improved power efficiency |
US7477092B2 (en) * | 2006-12-29 | 2009-01-13 | Sandisk Corporation | Unified voltage generation apparatus with improved power efficiency |
US7580298B2 (en) * | 2007-03-30 | 2009-08-25 | Sandisk 3D Llc | Method for managing electrical load of an electronic device |
US7558129B2 (en) * | 2007-03-30 | 2009-07-07 | Sandisk 3D Llc | Device with load-based voltage generation |
US7580296B2 (en) * | 2007-03-30 | 2009-08-25 | Sandisk 3D Llc | Load management for memory device |
US7515488B2 (en) * | 2007-03-30 | 2009-04-07 | Sandisk 3D Llc | Method for load-based voltage generation |
US8232833B2 (en) * | 2007-05-23 | 2012-07-31 | Silicon Storage Technology, Inc. | Charge pump systems and methods |
US20090058507A1 (en) * | 2007-08-28 | 2009-03-05 | Prajit Nandi | Bottom Plate Regulated Charge Pump |
US8044705B2 (en) * | 2007-08-28 | 2011-10-25 | Sandisk Technologies Inc. | Bottom plate regulation of charge pumps |
KR100900965B1 (ko) * | 2007-11-05 | 2009-06-08 | 한국전자통신연구원 | 고전압용 씨모스 전하 펌프 |
US7586362B2 (en) * | 2007-12-12 | 2009-09-08 | Sandisk Corporation | Low voltage charge pump with regulation |
US7586363B2 (en) * | 2007-12-12 | 2009-09-08 | Sandisk Corporation | Diode connected regulation of charge pumps |
US7969235B2 (en) | 2008-06-09 | 2011-06-28 | Sandisk Corporation | Self-adaptive multi-stage charge pump |
US20090302930A1 (en) * | 2008-06-09 | 2009-12-10 | Feng Pan | Charge Pump with Vt Cancellation Through Parallel Structure |
US8710907B2 (en) | 2008-06-24 | 2014-04-29 | Sandisk Technologies Inc. | Clock generator circuit for a charge pump |
US7683700B2 (en) * | 2008-06-25 | 2010-03-23 | Sandisk Corporation | Techniques of ripple reduction for charge pumps |
KR20100011650A (ko) * | 2008-07-25 | 2010-02-03 | 삼성전자주식회사 | 저전압 캐패시터로 구현되는 차치 펌프 및 이를 구비하는ddi |
US7795952B2 (en) * | 2008-12-17 | 2010-09-14 | Sandisk Corporation | Regulation of recovery rates in charge pumps |
US7973592B2 (en) * | 2009-07-21 | 2011-07-05 | Sandisk Corporation | Charge pump with current based regulation |
US8339183B2 (en) | 2009-07-24 | 2012-12-25 | Sandisk Technologies Inc. | Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories |
US20110148509A1 (en) | 2009-12-17 | 2011-06-23 | Feng Pan | Techniques to Reduce Charge Pump Overshoot |
US8305807B2 (en) | 2010-07-09 | 2012-11-06 | Sandisk Technologies Inc. | Detection of broken word-lines in memory arrays |
US8514630B2 (en) | 2010-07-09 | 2013-08-20 | Sandisk Technologies Inc. | Detection of word-line leakage in memory arrays: current based approach |
US8432732B2 (en) | 2010-07-09 | 2013-04-30 | Sandisk Technologies Inc. | Detection of word-line leakage in memory arrays |
US8106701B1 (en) | 2010-09-30 | 2012-01-31 | Sandisk Technologies Inc. | Level shifter with shoot-through current isolation |
KR101204569B1 (ko) * | 2010-12-03 | 2012-11-23 | 에스케이하이닉스 주식회사 | 고전압 발생기 및 고전압 발생 방법 |
US8294509B2 (en) | 2010-12-20 | 2012-10-23 | Sandisk Technologies Inc. | Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances |
US8339185B2 (en) | 2010-12-20 | 2012-12-25 | Sandisk 3D Llc | Charge pump system that dynamically selects number of active stages |
US8537593B2 (en) | 2011-04-28 | 2013-09-17 | Sandisk Technologies Inc. | Variable resistance switch suitable for supplying high voltage to drive load |
US8379454B2 (en) | 2011-05-05 | 2013-02-19 | Sandisk Technologies Inc. | Detection of broken word-lines in memory arrays |
US8726104B2 (en) | 2011-07-28 | 2014-05-13 | Sandisk Technologies Inc. | Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages |
US8775901B2 (en) | 2011-07-28 | 2014-07-08 | SanDisk Technologies, Inc. | Data recovery for defective word lines during programming of non-volatile memory arrays |
US8750042B2 (en) | 2011-07-28 | 2014-06-10 | Sandisk Technologies Inc. | Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures |
US8699247B2 (en) | 2011-09-09 | 2014-04-15 | Sandisk Technologies Inc. | Charge pump system dynamically reconfigurable for read and program |
US8514628B2 (en) | 2011-09-22 | 2013-08-20 | Sandisk Technologies Inc. | Dynamic switching approach to reduce area and power consumption of high voltage charge pumps |
US8400212B1 (en) | 2011-09-22 | 2013-03-19 | Sandisk Technologies Inc. | High voltage charge pump regulation system with fine step adjustment |
US8395434B1 (en) | 2011-10-05 | 2013-03-12 | Sandisk Technologies Inc. | Level shifter with negative voltage capability |
US8730722B2 (en) | 2012-03-02 | 2014-05-20 | Sandisk Technologies Inc. | Saving of data in cases of word-line to word-line short in memory arrays |
US8710909B2 (en) | 2012-09-14 | 2014-04-29 | Sandisk Technologies Inc. | Circuits for prevention of reverse leakage in Vth-cancellation charge pumps |
US9164526B2 (en) | 2012-09-27 | 2015-10-20 | Sandisk Technologies Inc. | Sigma delta over-sampling charge pump analog-to-digital converter |
US9810723B2 (en) | 2012-09-27 | 2017-11-07 | Sandisk Technologies Llc | Charge pump based over-sampling ADC for current detection |
CN103066832B (zh) * | 2012-12-07 | 2016-06-22 | 广州慧智微电子有限公司 | 一种能快速启动的电荷泵 |
US8836412B2 (en) | 2013-02-11 | 2014-09-16 | Sandisk 3D Llc | Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple |
US8981835B2 (en) * | 2013-06-18 | 2015-03-17 | Sandisk Technologies Inc. | Efficient voltage doubler |
US9024680B2 (en) | 2013-06-24 | 2015-05-05 | Sandisk Technologies Inc. | Efficiency for charge pumps with low supply voltages |
US9077238B2 (en) | 2013-06-25 | 2015-07-07 | SanDisk Technologies, Inc. | Capacitive regulation of charge pumps without refresh operation interruption |
US9007046B2 (en) | 2013-06-27 | 2015-04-14 | Sandisk Technologies Inc. | Efficient high voltage bias regulation circuit |
US9165683B2 (en) | 2013-09-23 | 2015-10-20 | Sandisk Technologies Inc. | Multi-word line erratic programming detection |
US9083231B2 (en) | 2013-09-30 | 2015-07-14 | Sandisk Technologies Inc. | Amplitude modulation for pass gate to improve charge pump efficiency |
US9154027B2 (en) | 2013-12-09 | 2015-10-06 | Sandisk Technologies Inc. | Dynamic load matching charge pump for reduced current consumption |
US9071236B1 (en) * | 2013-12-23 | 2015-06-30 | Nxp B.V. | Method and system for controlling a charge pump |
US9460809B2 (en) | 2014-07-10 | 2016-10-04 | Sandisk Technologies Llc | AC stress mode to screen out word line to word line shorts |
US9484086B2 (en) | 2014-07-10 | 2016-11-01 | Sandisk Technologies Llc | Determination of word line to local source line shorts |
US9443612B2 (en) | 2014-07-10 | 2016-09-13 | Sandisk Technologies Llc | Determination of bit line to low voltage signal shorts |
US9514835B2 (en) | 2014-07-10 | 2016-12-06 | Sandisk Technologies Llc | Determination of word line to word line shorts between adjacent blocks |
US9379605B2 (en) | 2014-08-11 | 2016-06-28 | Samsung Electronics Co., Ltd. | Clocking circuit, charge pumps, and related methods of operation |
US9330776B2 (en) | 2014-08-14 | 2016-05-03 | Sandisk Technologies Inc. | High voltage step down regulator with breakdown protection |
US9202593B1 (en) | 2014-09-02 | 2015-12-01 | Sandisk Technologies Inc. | Techniques for detecting broken word lines in non-volatile memories |
US9240249B1 (en) | 2014-09-02 | 2016-01-19 | Sandisk Technologies Inc. | AC stress methods to screen out bit line defects |
US9449694B2 (en) | 2014-09-04 | 2016-09-20 | Sandisk Technologies Llc | Non-volatile memory with multi-word line select for defect detection operations |
US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
US9647536B2 (en) | 2015-07-28 | 2017-05-09 | Sandisk Technologies Llc | High voltage generation using low voltage devices |
US9659666B2 (en) | 2015-08-31 | 2017-05-23 | Sandisk Technologies Llc | Dynamic memory recovery at the sub-block level |
US9520776B1 (en) | 2015-09-18 | 2016-12-13 | Sandisk Technologies Llc | Selective body bias for charge pump transfer switches |
US9698676B1 (en) | 2016-03-11 | 2017-07-04 | Sandisk Technologies Llc | Charge pump based over-sampling with uniform step size for current detection |
US20190311749A1 (en) * | 2018-04-09 | 2019-10-10 | Anaflash Inc. | Logic Compatible Embedded Flash Memory |
US10461635B1 (en) | 2018-05-15 | 2019-10-29 | Analog Devices Global Unlimited Company | Low VIN high efficiency chargepump |
KR102491767B1 (ko) | 2018-11-05 | 2023-01-27 | 삼성전자주식회사 | 전압을 변환하기 위한 차지 펌프를 포함하는 전자 회로 |
US11599760B2 (en) | 2020-06-25 | 2023-03-07 | Samsung Electronics Co., Ltd. | Bi-directional voltage converter of smart card and smart card including the same |
US12046987B2 (en) * | 2022-01-24 | 2024-07-23 | Stmicroelectronics S.R.L. | Voltage regulator circuit for a switching circuit load |
US11810626B2 (en) | 2022-02-11 | 2023-11-07 | Sandisk Technologies Llc | Generating boosted voltages with a hybrid charge pump |
WO2023223836A1 (ja) * | 2022-05-17 | 2023-11-23 | 国立大学法人大阪大学 | 電源回路、パワーマネジメント回路及びセンサデバイス |
US11955196B2 (en) * | 2022-07-13 | 2024-04-09 | Nanya Technology Corporation | Memory device, voltage generating device and voltage generating method thereof |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5245009B2 (zh) * | 1972-02-24 | 1977-11-12 | ||
GB1364618A (en) * | 1971-12-03 | 1974-08-21 | Seiko Instr & Electronics | Voltage boosters |
DE2821418A1 (de) | 1978-05-16 | 1979-11-22 | Siemens Ag | Taktgesteuerter gleichspannungswandler |
US4888738A (en) | 1988-06-29 | 1989-12-19 | Seeq Technology | Current-regulated, voltage-regulated erase circuit for EEPROM memory |
US5059815A (en) | 1990-04-05 | 1991-10-22 | Advanced Micro Devices, Inc. | High voltage charge pumps with series capacitors |
US5008799A (en) | 1990-04-05 | 1991-04-16 | Montalvo Antonio J | Back-to-back capacitor charge pumps |
JPH04268294A (ja) * | 1991-02-25 | 1992-09-24 | Nec Corp | 昇圧回路 |
US5397931A (en) | 1993-03-31 | 1995-03-14 | Texas Instruments Deutschland Gmbh | Voltage multiplier |
US5436587A (en) | 1993-11-24 | 1995-07-25 | Sundisk Corporation | Charge pump circuit with exponetral multiplication |
DE69408665T2 (de) | 1994-08-12 | 1998-10-15 | Cons Ric Microelettronica | Spannungserhöher vom Ladungspumpentype |
US5508971A (en) | 1994-10-17 | 1996-04-16 | Sandisk Corporation | Programmable power generation circuit for flash EEPROM memory systems |
US5596532A (en) * | 1995-10-18 | 1997-01-21 | Sandisk Corporation | Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range |
FR2742942B1 (fr) * | 1995-12-26 | 1998-01-16 | Sgs Thomson Microelectronics | Generateur de creneaux de haute tension |
US5625544A (en) | 1996-04-25 | 1997-04-29 | Programmable Microelectronics Corp. | Charge pump |
KR100280434B1 (ko) * | 1998-01-23 | 2001-03-02 | 김영환 | 고전압발생회로 |
US6208542B1 (en) | 1998-06-30 | 2001-03-27 | Sandisk Corporation | Techniques for storing digital data in an analog or multilevel memory |
US6044019A (en) | 1998-10-23 | 2000-03-28 | Sandisk Corporation | Non-volatile memory with improved sensing and method therefor |
KR100347144B1 (ko) * | 2000-05-02 | 2002-08-03 | 주식회사 하이닉스반도체 | 고전압 발생회로 |
JP4427898B2 (ja) * | 2000-12-12 | 2010-03-10 | 株式会社デンソー | 昇圧装置及びその制御方法 |
US6861894B2 (en) | 2002-09-27 | 2005-03-01 | Sandisk Corporation | Charge pump with Fibonacci number multiplication |
-
2003
- 2003-08-07 US US10/636,839 patent/US6922096B2/en not_active Expired - Lifetime
-
2004
- 2004-07-27 WO PCT/US2004/024064 patent/WO2005017902A1/en active IP Right Grant
- 2004-07-27 DE DE602004008935T patent/DE602004008935T2/de not_active Expired - Lifetime
- 2004-07-27 KR KR1020067002634A patent/KR101039236B1/ko active IP Right Grant
- 2004-07-27 EP EP04779231A patent/EP1652189B8/en not_active Expired - Lifetime
- 2004-07-27 JP JP2006522598A patent/JP4768614B2/ja not_active Expired - Fee Related
- 2004-07-27 CN CN2004800278897A patent/CN1856834B/zh not_active Expired - Fee Related
- 2004-07-27 AT AT04779231T patent/ATE373308T1/de not_active IP Right Cessation
- 2004-08-06 TW TW093123747A patent/TWI266170B/zh not_active IP Right Cessation
-
2005
- 2005-06-21 US US11/158,557 patent/US7113023B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2007502096A (ja) | 2007-02-01 |
WO2005017902A1 (en) | 2005-02-24 |
US20050237103A1 (en) | 2005-10-27 |
JP4768614B2 (ja) | 2011-09-07 |
US20050030088A1 (en) | 2005-02-10 |
US7113023B2 (en) | 2006-09-26 |
EP1652189A1 (en) | 2006-05-03 |
DE602004008935T2 (de) | 2008-04-30 |
EP1652189B1 (en) | 2007-09-12 |
KR101039236B1 (ko) | 2011-06-07 |
TWI266170B (en) | 2006-11-11 |
KR20060052973A (ko) | 2006-05-19 |
TW200517805A (en) | 2005-06-01 |
WO2005017902A9 (en) | 2005-05-19 |
ATE373308T1 (de) | 2007-09-15 |
EP1652189B8 (en) | 2008-02-13 |
US6922096B2 (en) | 2005-07-26 |
DE602004008935D1 (de) | 2007-10-25 |
CN1856834B (zh) | 2011-09-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGIES, INC. Free format text: FORMER OWNER: SANDISK CORPORATION Effective date: 20120905 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120905 Address after: Texas, USA Patentee after: Sandy Technology Corp. Address before: California, USA Patentee before: Sandisk Corp. |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Texas, USA Patentee after: SANDISK TECHNOLOGIES LLC Address before: Texas, USA Patentee before: Sandy Technology Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110907 |
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CF01 | Termination of patent right due to non-payment of annual fee |