ATE373308T1 - Flächeneffiziente ladungspumpe - Google Patents

Flächeneffiziente ladungspumpe

Info

Publication number
ATE373308T1
ATE373308T1 AT04779231T AT04779231T ATE373308T1 AT E373308 T1 ATE373308 T1 AT E373308T1 AT 04779231 T AT04779231 T AT 04779231T AT 04779231 T AT04779231 T AT 04779231T AT E373308 T1 ATE373308 T1 AT E373308T1
Authority
AT
Austria
Prior art keywords
voltage
vcc
charge pump
area
adder
Prior art date
Application number
AT04779231T
Other languages
English (en)
Inventor
Raul-Adrian Cernea
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE373308T1 publication Critical patent/ATE373308T1/de

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Peptides Or Proteins (AREA)
  • Steroid Compounds (AREA)
AT04779231T 2003-08-07 2004-07-27 Flächeneffiziente ladungspumpe ATE373308T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/636,839 US6922096B2 (en) 2003-08-07 2003-08-07 Area efficient charge pump

Publications (1)

Publication Number Publication Date
ATE373308T1 true ATE373308T1 (de) 2007-09-15

Family

ID=34116483

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04779231T ATE373308T1 (de) 2003-08-07 2004-07-27 Flächeneffiziente ladungspumpe

Country Status (9)

Country Link
US (2) US6922096B2 (de)
EP (1) EP1652189B8 (de)
JP (1) JP4768614B2 (de)
KR (1) KR101039236B1 (de)
CN (1) CN1856834B (de)
AT (1) ATE373308T1 (de)
DE (1) DE602004008935T2 (de)
TW (1) TWI266170B (de)
WO (1) WO2005017902A1 (de)

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US7397299B2 (en) * 2004-12-28 2008-07-08 The Hong Kong University Of Science And Technology N-stage exponential charge pumps, charging stages therefor and methods of operation thereof
US20070126494A1 (en) * 2005-12-06 2007-06-07 Sandisk Corporation Charge pump having shunt diode for improved operating efficiency
US20070139099A1 (en) * 2005-12-16 2007-06-21 Sandisk Corporation Charge pump regulation control for improved power efficiency
US7372320B2 (en) * 2005-12-16 2008-05-13 Sandisk Corporation Voltage regulation with active supplemental current for output stabilization
US20070229149A1 (en) * 2006-03-30 2007-10-04 Sandisk Corporation Voltage regulator having high voltage protection
US7554311B2 (en) * 2006-07-31 2009-06-30 Sandisk Corporation Hybrid charge pump regulation
US20080068068A1 (en) * 2006-09-19 2008-03-20 Sridhar Yadala Method and system for charge pumps
US7368979B2 (en) 2006-09-19 2008-05-06 Sandisk Corporation Implementation of output floating scheme for hv charge pumps
US7440342B2 (en) 2006-12-29 2008-10-21 Sandisk Corporation Unified voltage generation method with improved power efficiency
US7477092B2 (en) * 2006-12-29 2009-01-13 Sandisk Corporation Unified voltage generation apparatus with improved power efficiency
US7580298B2 (en) * 2007-03-30 2009-08-25 Sandisk 3D Llc Method for managing electrical load of an electronic device
US7558129B2 (en) * 2007-03-30 2009-07-07 Sandisk 3D Llc Device with load-based voltage generation
US7580296B2 (en) * 2007-03-30 2009-08-25 Sandisk 3D Llc Load management for memory device
US7515488B2 (en) * 2007-03-30 2009-04-07 Sandisk 3D Llc Method for load-based voltage generation
US8232833B2 (en) 2007-05-23 2012-07-31 Silicon Storage Technology, Inc. Charge pump systems and methods
US8044705B2 (en) * 2007-08-28 2011-10-25 Sandisk Technologies Inc. Bottom plate regulation of charge pumps
US20090058507A1 (en) * 2007-08-28 2009-03-05 Prajit Nandi Bottom Plate Regulated Charge Pump
KR100900965B1 (ko) * 2007-11-05 2009-06-08 한국전자통신연구원 고전압용 씨모스 전하 펌프
US7586362B2 (en) * 2007-12-12 2009-09-08 Sandisk Corporation Low voltage charge pump with regulation
US7586363B2 (en) * 2007-12-12 2009-09-08 Sandisk Corporation Diode connected regulation of charge pumps
US20090302930A1 (en) * 2008-06-09 2009-12-10 Feng Pan Charge Pump with Vt Cancellation Through Parallel Structure
US7969235B2 (en) 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US8710907B2 (en) 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
US7683700B2 (en) * 2008-06-25 2010-03-23 Sandisk Corporation Techniques of ripple reduction for charge pumps
KR20100011650A (ko) * 2008-07-25 2010-02-03 삼성전자주식회사 저전압 캐패시터로 구현되는 차치 펌프 및 이를 구비하는ｄｄｉ
US7795952B2 (en) * 2008-12-17 2010-09-14 Sandisk Corporation Regulation of recovery rates in charge pumps
US7973592B2 (en) * 2009-07-21 2011-07-05 Sandisk Corporation Charge pump with current based regulation
US8339183B2 (en) 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US20110148509A1 (en) 2009-12-17 2011-06-23 Feng Pan Techniques to Reduce Charge Pump Overshoot
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8106701B1 (en) 2010-09-30 2012-01-31 Sandisk Technologies Inc. Level shifter with shoot-through current isolation
KR101204569B1 (ko) * 2010-12-03 2012-11-23 에스케이하이닉스 주식회사 고전압 발생기 및 고전압 발생 방법
US8294509B2 (en) 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8537593B2 (en) 2011-04-28 2013-09-17 Sandisk Technologies Inc. Variable resistance switch suitable for supplying high voltage to drive load
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8400212B1 (en) 2011-09-22 2013-03-19 Sandisk Technologies Inc. High voltage charge pump regulation system with fine step adjustment
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
US8395434B1 (en) 2011-10-05 2013-03-12 Sandisk Technologies Inc. Level shifter with negative voltage capability
US8730722B2 (en) 2012-03-02 2014-05-20 Sandisk Technologies Inc. Saving of data in cases of word-line to word-line short in memory arrays
US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US9810723B2 (en) 2012-09-27 2017-11-07 Sandisk Technologies Llc Charge pump based over-sampling ADC for current detection
US9164526B2 (en) 2012-09-27 2015-10-20 Sandisk Technologies Inc. Sigma delta over-sampling charge pump analog-to-digital converter
CN103066832B (zh) * 2012-12-07 2016-06-22 广州慧智微电子有限公司 一种能快速启动的电荷泵
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) * 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US9165683B2 (en) 2013-09-23 2015-10-20 Sandisk Technologies Inc. Multi-word line erratic programming detection
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
US9071236B1 (en) * 2013-12-23 2015-06-30 Nxp B.V. Method and system for controlling a charge pump
US9460809B2 (en) 2014-07-10 2016-10-04 Sandisk Technologies Llc AC stress mode to screen out word line to word line shorts
US9443612B2 (en) 2014-07-10 2016-09-13 Sandisk Technologies Llc Determination of bit line to low voltage signal shorts
US9514835B2 (en) 2014-07-10 2016-12-06 Sandisk Technologies Llc Determination of word line to word line shorts between adjacent blocks
US9484086B2 (en) 2014-07-10 2016-11-01 Sandisk Technologies Llc Determination of word line to local source line shorts
US9379605B2 (en) 2014-08-11 2016-06-28 Samsung Electronics Co., Ltd. Clocking circuit, charge pumps, and related methods of operation
US9330776B2 (en) 2014-08-14 2016-05-03 Sandisk Technologies Inc. High voltage step down regulator with breakdown protection
US9240249B1 (en) 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9202593B1 (en) 2014-09-02 2015-12-01 Sandisk Technologies Inc. Techniques for detecting broken word lines in non-volatile memories
US9449694B2 (en) 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9659666B2 (en) 2015-08-31 2017-05-23 Sandisk Technologies Llc Dynamic memory recovery at the sub-block level
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
US9698676B1 (en) 2016-03-11 2017-07-04 Sandisk Technologies Llc Charge pump based over-sampling with uniform step size for current detection
US20190311749A1 (en) * 2018-04-09 2019-10-10 Anaflash Inc. Logic Compatible Embedded Flash Memory
US10461635B1 (en) 2018-05-15 2019-10-29 Analog Devices Global Unlimited Company Low VIN high efficiency chargepump
KR102491767B1 (ko) 2018-11-05 2023-01-27 삼성전자주식회사 전압을 변환하기 위한 차지 펌프를 포함하는 전자 회로
US11599760B2 (en) 2020-06-25 2023-03-07 Samsung Electronics Co., Ltd. Bi-directional voltage converter of smart card and smart card including the same
US20230238873A1 (en) * 2022-01-24 2023-07-27 Stmicroelectronics S.R.L. Voltage regulator circuit for a switching circuit load
US11810626B2 (en) 2022-02-11 2023-11-07 Sandisk Technologies Llc Generating boosted voltages with a hybrid charge pump
WO2023223836A1 (ja) * 2022-05-17 2023-11-23 国立大学法人大阪大学 電源回路、パワーマネジメント回路及びセンサデバイス
US11955196B2 (en) * 2022-07-13 2024-04-09 Nanya Technology Corporation Memory device, voltage generating device and voltage generating method thereof

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Also Published As

Publication number Publication date
KR101039236B1 (ko) 2011-06-07
TW200517805A (en) 2005-06-01
CN1856834A (zh) 2006-11-01
WO2005017902A1 (en) 2005-02-24
JP2007502096A (ja) 2007-02-01
US20050030088A1 (en) 2005-02-10
EP1652189B8 (de) 2008-02-13
JP4768614B2 (ja) 2011-09-07
US7113023B2 (en) 2006-09-26
US6922096B2 (en) 2005-07-26
EP1652189A1 (de) 2006-05-03
KR20060052973A (ko) 2006-05-19
US20050237103A1 (en) 2005-10-27
TWI266170B (en) 2006-11-11
EP1652189B1 (de) 2007-09-12
WO2005017902A9 (en) 2005-05-19
DE602004008935D1 (de) 2007-10-25
DE602004008935T2 (de) 2008-04-30
CN1856834B (zh) 2011-09-07

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