CN1813357A - 氧化锌基纳米棒和半导体薄膜的p-n异质结结构、其制备和包括其的纳米器件 - Google Patents
氧化锌基纳米棒和半导体薄膜的p-n异质结结构、其制备和包括其的纳米器件 Download PDFInfo
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- CN1813357A CN1813357A CN200480017788.1A CN200480017788A CN1813357A CN 1813357 A CN1813357 A CN 1813357A CN 200480017788 A CN200480017788 A CN 200480017788A CN 1813357 A CN1813357 A CN 1813357A
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- heterojunction structure
- zno
- nanometer rods
- film
- nano
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000010409 thin film Substances 0.000 title abstract description 7
- 239000002073 nanorod Substances 0.000 title abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title description 44
- 239000011787 zinc oxide Substances 0.000 title description 23
- 238000002360 preparation method Methods 0.000 title description 6
- 239000000463 material Substances 0.000 claims abstract description 14
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000000376 reactant Substances 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 238000004020 luminiscence type Methods 0.000 abstract description 3
- 230000005669 field effect Effects 0.000 abstract description 2
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- 239000011777 magnesium Substances 0.000 description 17
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
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- 239000002243 precursor Substances 0.000 description 5
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- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 3
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- 238000004626 scanning electron microscopy Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 238000001228 spectrum Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- MHOFGBJTSNWTDT-UHFFFAOYSA-M 2-[n-ethyl-4-[(6-methoxy-3-methyl-1,3-benzothiazol-3-ium-2-yl)diazenyl]anilino]ethanol;methyl sulfate Chemical compound COS([O-])(=O)=O.C1=CC(N(CCO)CC)=CC=C1N=NC1=[N+](C)C2=CC=C(OC)C=C2S1 MHOFGBJTSNWTDT-UHFFFAOYSA-M 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- STRSUPBFTFGPNR-UHFFFAOYSA-N CC1(C=CC=C1)[Mg] Chemical compound CC1(C=CC=C1)[Mg] STRSUPBFTFGPNR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 208000005168 Intussusception Diseases 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
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- 238000002441 X-ray diffraction Methods 0.000 description 1
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- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- AQBNSUGIFRIQSL-UHFFFAOYSA-N acetyl acetate;magnesium Chemical compound [Mg].CC(=O)OC(C)=O AQBNSUGIFRIQSL-UHFFFAOYSA-N 0.000 description 1
- DIWNCNINVWYUCD-UHFFFAOYSA-N acetyl acetate;zinc Chemical compound [Zn].CC(=O)OC(C)=O DIWNCNINVWYUCD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- UJYLYGDHTIVYRI-UHFFFAOYSA-N cadmium(2+);ethane Chemical compound [Cd+2].[CH2-]C.[CH2-]C UJYLYGDHTIVYRI-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- -1 ethyl cyclopentadienyl Chemical group 0.000 description 1
- ALCDAWARCQFJBA-UHFFFAOYSA-N ethylselanylethane Chemical compound CC[Se]CC ALCDAWARCQFJBA-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 1
- 239000011654 magnesium acetate Substances 0.000 description 1
- 235000011285 magnesium acetate Nutrition 0.000 description 1
- 229940069446 magnesium acetate Drugs 0.000 description 1
- AKTIAGQCYPCKFX-FDGPNNRMSA-L magnesium;(z)-4-oxopent-2-en-2-olate Chemical compound [Mg+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O AKTIAGQCYPCKFX-FDGPNNRMSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- LGRLWUINFJPLSH-UHFFFAOYSA-N methanide Chemical compound [CH3-] LGRLWUINFJPLSH-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002097 pentamethylcyclopentadienyl group Chemical group 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
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KR100767284B1 (ko) * | 2006-03-27 | 2007-10-17 | 학교법인 포항공과대학교 | 산화아연계 미세 구조물 및 그 제조방법 |
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US20080108122A1 (en) * | 2006-09-01 | 2008-05-08 | State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon | Microchemical nanofactories |
US20080135089A1 (en) * | 2006-11-15 | 2008-06-12 | General Electric Company | Graded hybrid amorphous silicon nanowire solar cells |
US20080110486A1 (en) * | 2006-11-15 | 2008-05-15 | General Electric Company | Amorphous-crystalline tandem nanostructured solar cells |
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2003
- 2003-06-26 KR KR1020030041813A patent/KR100593264B1/ko active IP Right Grant
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2004
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Also Published As
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KR20050001582A (ko) | 2005-01-07 |
US7541623B2 (en) | 2009-06-02 |
WO2004114422A1 (en) | 2004-12-29 |
CN100499186C (zh) | 2009-06-10 |
US20060189018A1 (en) | 2006-08-24 |
KR100593264B1 (ko) | 2006-06-26 |
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