CN102456786A - 发光二极管及其制作方法 - Google Patents
发光二极管及其制作方法 Download PDFInfo
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- CN102456786A CN102456786A CN2010105249563A CN201010524956A CN102456786A CN 102456786 A CN102456786 A CN 102456786A CN 2010105249563 A CN2010105249563 A CN 2010105249563A CN 201010524956 A CN201010524956 A CN 201010524956A CN 102456786 A CN102456786 A CN 102456786A
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- zinc oxide
- gallium nitride
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- emitting diode
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CN201010524956.3A CN102456786B (zh) | 2010-10-29 | 2010-10-29 | 发光二极管及其制作方法 |
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CN201010524956.3A CN102456786B (zh) | 2010-10-29 | 2010-10-29 | 发光二极管及其制作方法 |
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CN102456786A true CN102456786A (zh) | 2012-05-16 |
CN102456786B CN102456786B (zh) | 2016-03-09 |
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CN201010524956.3A Expired - Fee Related CN102456786B (zh) | 2010-10-29 | 2010-10-29 | 发光二极管及其制作方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106384762A (zh) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | 生长在铝酸锶钽镧衬底上的纳米柱led及其制备方法 |
CN106384761A (zh) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | 生长在铝酸锶钽镧衬底上的InGaN/GaN纳米柱多量子阱及其制备方法 |
CN106653966A (zh) * | 2016-10-31 | 2017-05-10 | 华南理工大学 | 生长在铝酸锶钽镧衬底上的GaN纳米柱及其制法与应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1813357A (zh) * | 2003-06-26 | 2006-08-02 | 学校法人浦项工科大学校 | 氧化锌基纳米棒和半导体薄膜的p-n异质结结构、其制备和包括其的纳米器件 |
US20070041214A1 (en) * | 2005-05-24 | 2007-02-22 | Ha Jun S | Rod type light emitting device and method for fabricating the same |
US20070235738A1 (en) * | 2004-09-13 | 2007-10-11 | Samsung Electronics Co., Ltd. | Nanowire light emitting device and method of fabricating the same |
US20090146142A1 (en) * | 2007-12-05 | 2009-06-11 | Samsung Electronics Co., Ltd | Light-emitting device including nanorod and method of manufacturing the same |
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2010
- 2010-10-29 CN CN201010524956.3A patent/CN102456786B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1813357A (zh) * | 2003-06-26 | 2006-08-02 | 学校法人浦项工科大学校 | 氧化锌基纳米棒和半导体薄膜的p-n异质结结构、其制备和包括其的纳米器件 |
US20070235738A1 (en) * | 2004-09-13 | 2007-10-11 | Samsung Electronics Co., Ltd. | Nanowire light emitting device and method of fabricating the same |
US20070041214A1 (en) * | 2005-05-24 | 2007-02-22 | Ha Jun S | Rod type light emitting device and method for fabricating the same |
US20090146142A1 (en) * | 2007-12-05 | 2009-06-11 | Samsung Electronics Co., Ltd | Light-emitting device including nanorod and method of manufacturing the same |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106384762A (zh) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | 生长在铝酸锶钽镧衬底上的纳米柱led及其制备方法 |
CN106384761A (zh) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | 生长在铝酸锶钽镧衬底上的InGaN/GaN纳米柱多量子阱及其制备方法 |
CN106653966A (zh) * | 2016-10-31 | 2017-05-10 | 华南理工大学 | 生长在铝酸锶钽镧衬底上的GaN纳米柱及其制法与应用 |
CN106384762B (zh) * | 2016-10-31 | 2019-05-14 | 华南理工大学 | 生长在铝酸锶钽镧衬底上的纳米柱led及其制备方法 |
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Publication number | Publication date |
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CN102456786B (zh) | 2016-03-09 |
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Inventor after: Zhuang Songcai Inventor before: Xu Jialin |
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TR01 | Transfer of patent right |
Effective date of registration: 20171101 Address after: Guangdong city of Shenzhen province Futian District Huaqiang North Street 2070 Shennan Zhong Road, electronic technology building C, 22B Patentee after: SHENZHEN HUAZHIHAI INDUSTRY CO.,LTD. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Co-patentee before: HON HAI PRECISION INDUSTRY Co.,Ltd. Patentee before: HONG FU JIN PRECISION INDUSTRY (SHENZHEN) Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160309 Termination date: 20211029 |