CN106571405A - 一种带有GaN纳米线阵列的紫外探测器及其制作方法 - Google Patents
一种带有GaN纳米线阵列的紫外探测器及其制作方法 Download PDFInfo
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- CN106571405A CN106571405A CN201610936288.2A CN201610936288A CN106571405A CN 106571405 A CN106571405 A CN 106571405A CN 201610936288 A CN201610936288 A CN 201610936288A CN 106571405 A CN106571405 A CN 106571405A
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
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Application Number | Priority Date | Filing Date | Title |
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CN201610936288.2A CN106571405B (zh) | 2016-11-01 | 2016-11-01 | 一种带有GaN纳米线阵列的紫外探测器及其制作方法 |
PCT/CN2017/079209 WO2018082251A1 (zh) | 2016-11-01 | 2017-04-01 | 一种带有GaN纳米线阵列的紫外探测器及其制作方法 |
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CN201610936288.2A CN106571405B (zh) | 2016-11-01 | 2016-11-01 | 一种带有GaN纳米线阵列的紫外探测器及其制作方法 |
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CN106571405B CN106571405B (zh) | 2018-04-03 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107195586A (zh) * | 2017-04-27 | 2017-09-22 | 华南师范大学 | 一种GaN水平纳米线电子器件制备方法 |
CN108417676A (zh) * | 2018-02-09 | 2018-08-17 | 郑州大学 | 基于等离子体增强效应的核壳结构钙钛矿led及其制备方法 |
CN108831969A (zh) * | 2018-05-28 | 2018-11-16 | 北京大学 | 利用空气作为绝缘介质的半导体纳米线电注入发光器件 |
CN111725338A (zh) * | 2019-03-19 | 2020-09-29 | 华南师范大学 | 一种微米线阵列异质结紫外光探测器及其制备方法 |
CN111063725B (zh) * | 2019-12-19 | 2021-01-19 | 太原理工大学 | 一种三维氮化镓基呼出式气体传感器及其制备方法 |
CN112880821A (zh) * | 2019-11-29 | 2021-06-01 | 中国科学技术大学 | 日盲紫外光电化学光探测器及其制备方法 |
CN112880823A (zh) * | 2019-11-29 | 2021-06-01 | 中国科学技术大学 | 日盲紫外光电化学光探测器及其产品 |
CN115084296A (zh) * | 2022-05-23 | 2022-09-20 | 南京航空航天大学 | 复合型自驱动氧化锌同质结基紫外探测器及其制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2685032C1 (ru) * | 2018-07-26 | 2019-04-16 | Общество с ограниченной ответственностью "Научно технический центр "Новые технологии" | Фоточувствительное устройство и способ его изготовления |
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CN1813357A (zh) * | 2003-06-26 | 2006-08-02 | 学校法人浦项工科大学校 | 氧化锌基纳米棒和半导体薄膜的p-n异质结结构、其制备和包括其的纳米器件 |
CN101510504A (zh) * | 2009-03-13 | 2009-08-19 | 苏州纳晶光电有限公司 | 半导体薄膜的纳区横向外延生长方法 |
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CN103760336A (zh) * | 2014-01-02 | 2014-04-30 | 中国科学院苏州生物医学工程技术研究所 | 一种线阵ZnO纳米线异质结LED生物传感器及制备方法 |
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CN102260907B (zh) * | 2011-06-17 | 2013-03-13 | 浙江大学 | 一种ZnO纳米同质p-n结阵列的制备方法 |
CN104638031A (zh) * | 2015-01-21 | 2015-05-20 | 中电投西安太阳能电力有限公司 | 基于GaN纳米线阵列的太阳能电池及其制备方法 |
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US20040262636A1 (en) * | 2002-12-09 | 2004-12-30 | The Regents Of The University Of California | Fluidic nanotubes and devices |
CN1813357A (zh) * | 2003-06-26 | 2006-08-02 | 学校法人浦项工科大学校 | 氧化锌基纳米棒和半导体薄膜的p-n异质结结构、其制备和包括其的纳米器件 |
CN101510504A (zh) * | 2009-03-13 | 2009-08-19 | 苏州纳晶光电有限公司 | 半导体薄膜的纳区横向外延生长方法 |
CN101853894A (zh) * | 2010-04-14 | 2010-10-06 | 大连海事大学 | 一种纳米线异质结阵列基紫外光探测器及其制备方法 |
CN102315330A (zh) * | 2011-09-20 | 2012-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种高灵敏度紫外探测器的制备方法 |
CN104011883A (zh) * | 2011-12-20 | 2014-08-27 | 法国原子能及替代能源委员会 | 制造半导体微或纳米线的方法、包括所述微或纳米线的半导体结构和制造半导体结构的方法 |
CN103579415A (zh) * | 2013-10-22 | 2014-02-12 | 华中科技大学 | 一种氧化锌纳米线阵列紫外光电探测器的制备方法 |
CN103760336A (zh) * | 2014-01-02 | 2014-04-30 | 中国科学院苏州生物医学工程技术研究所 | 一种线阵ZnO纳米线异质结LED生物传感器及制备方法 |
CN105140331A (zh) * | 2015-08-03 | 2015-12-09 | 宋金会 | 紫外探测器 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107195586A (zh) * | 2017-04-27 | 2017-09-22 | 华南师范大学 | 一种GaN水平纳米线电子器件制备方法 |
CN108417676A (zh) * | 2018-02-09 | 2018-08-17 | 郑州大学 | 基于等离子体增强效应的核壳结构钙钛矿led及其制备方法 |
CN108417676B (zh) * | 2018-02-09 | 2019-05-17 | 郑州大学 | 基于等离子体增强效应的核壳结构钙钛矿led及其制备方法 |
CN108831969A (zh) * | 2018-05-28 | 2018-11-16 | 北京大学 | 利用空气作为绝缘介质的半导体纳米线电注入发光器件 |
CN111725338B (zh) * | 2019-03-19 | 2022-04-01 | 华南师范大学 | 一种微米线阵列异质结紫外光探测器及其制备方法 |
CN111725338A (zh) * | 2019-03-19 | 2020-09-29 | 华南师范大学 | 一种微米线阵列异质结紫外光探测器及其制备方法 |
CN112880821A (zh) * | 2019-11-29 | 2021-06-01 | 中国科学技术大学 | 日盲紫外光电化学光探测器及其制备方法 |
CN112880823A (zh) * | 2019-11-29 | 2021-06-01 | 中国科学技术大学 | 日盲紫外光电化学光探测器及其产品 |
WO2021104528A1 (zh) * | 2019-11-29 | 2021-06-03 | 中国科学技术大学 | 日盲紫外光电化学光探测器及其产品 |
CN112880823B (zh) * | 2019-11-29 | 2022-05-13 | 中国科学技术大学 | 日盲紫外光电化学光探测器及其产品 |
CN111063725B (zh) * | 2019-12-19 | 2021-01-19 | 太原理工大学 | 一种三维氮化镓基呼出式气体传感器及其制备方法 |
CN115084296A (zh) * | 2022-05-23 | 2022-09-20 | 南京航空航天大学 | 复合型自驱动氧化锌同质结基紫外探测器及其制备方法 |
CN115084296B (zh) * | 2022-05-23 | 2023-09-29 | 南京航空航天大学 | 复合型自驱动氧化锌同质结基紫外探测器及其制备方法 |
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