CN103715325A - 单根ZnO微米线同质结发光二极管的制备方法 - Google Patents
单根ZnO微米线同质结发光二极管的制备方法 Download PDFInfo
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- CN103715325A CN103715325A CN201310730886.0A CN201310730886A CN103715325A CN 103715325 A CN103715325 A CN 103715325A CN 201310730886 A CN201310730886 A CN 201310730886A CN 103715325 A CN103715325 A CN 103715325A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000843 powder Substances 0.000 claims description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 239000010453 quartz Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 239000003708 ampul Substances 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 76
- 239000011787 zinc oxide Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- -1 calcirm-fluoride Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000855 fermentation Methods 0.000 description 1
- 230000004151 fermentation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310730886.0A CN103715325B (zh) | 2013-12-26 | 2013-12-26 | 单根ZnO微米线同质结发光二极管的制备方法 |
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CN201310730886.0A CN103715325B (zh) | 2013-12-26 | 2013-12-26 | 单根ZnO微米线同质结发光二极管的制备方法 |
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CN103715325A true CN103715325A (zh) | 2014-04-09 |
CN103715325B CN103715325B (zh) | 2016-09-14 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810434A (zh) * | 2015-02-10 | 2015-07-29 | 华中科技大学 | 一种白光发光二极管及其制备方法 |
CN108088875A (zh) * | 2017-12-22 | 2018-05-29 | 辽宁师范大学 | 基于单根ZnO微米线的非平衡电桥式乙醇气体传感器 |
CN112909109A (zh) * | 2021-02-10 | 2021-06-04 | 北京工业大学 | 一种基于横向桥接pn结的自供电纳米紫外探测器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040252737A1 (en) * | 2003-06-16 | 2004-12-16 | Gyu Chul Yi | Zinc oxide based nanorod with quantum well or coaxial quantum structure |
CN1691362A (zh) * | 2004-04-07 | 2005-11-02 | 三星电子株式会社 | 纳米丝发光器件及其制造方法 |
CN1949554A (zh) * | 2006-11-02 | 2007-04-18 | 浙江大学 | 一种ZnO基纳米线发光二极管及其制备方法 |
KR20120061397A (ko) * | 2010-12-03 | 2012-06-13 | 한국기계연구원 | 나노 와이어, 이를 이용한 발광 다이오드, 및 이의 제조 방법 |
-
2013
- 2013-12-26 CN CN201310730886.0A patent/CN103715325B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040252737A1 (en) * | 2003-06-16 | 2004-12-16 | Gyu Chul Yi | Zinc oxide based nanorod with quantum well or coaxial quantum structure |
CN1691362A (zh) * | 2004-04-07 | 2005-11-02 | 三星电子株式会社 | 纳米丝发光器件及其制造方法 |
CN1949554A (zh) * | 2006-11-02 | 2007-04-18 | 浙江大学 | 一种ZnO基纳米线发光二极管及其制备方法 |
KR20120061397A (ko) * | 2010-12-03 | 2012-06-13 | 한국기계연구원 | 나노 와이어, 이를 이용한 발광 다이오드, 및 이의 제조 방법 |
Non-Patent Citations (2)
Title |
---|
冯秋菊等: "《CVD法制备p-ZnO薄膜/n-Si异质结发光二极管及其性能研究》", 《物理学报》 * |
曹璐: "《纳/微米半导体氧化物(氧化锌和三氧化二镓)的制备及其特性分析》", 《中国优秀硕士学位论文全文数据库工程科技Ⅰ辑》 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810434A (zh) * | 2015-02-10 | 2015-07-29 | 华中科技大学 | 一种白光发光二极管及其制备方法 |
CN108088875A (zh) * | 2017-12-22 | 2018-05-29 | 辽宁师范大学 | 基于单根ZnO微米线的非平衡电桥式乙醇气体传感器 |
CN112909109A (zh) * | 2021-02-10 | 2021-06-04 | 北京工业大学 | 一种基于横向桥接pn结的自供电纳米紫外探测器 |
CN112909109B (zh) * | 2021-02-10 | 2022-11-29 | 北京工业大学 | 一种基于横向桥接pn结的自供电纳米紫外探测器 |
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CN103715325B (zh) | 2016-09-14 |
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Effective date of registration: 20191114 Address after: 214500 No.8 JinDou Road, Jingjiang City, Taizhou City, Jiangsu Province Patentee after: Jiangsu Xinhe Environmental Technology Co., Ltd Address before: 430074 No. 41 Guanggu Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province. Room 09, 22 floors, 3 buildings in phase I of International Design City Patentee before: Wuhan Mai Liao Network Technology Co., Ltd. |
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