CN1812267A - 驱动电路 - Google Patents

驱动电路 Download PDF

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Publication number
CN1812267A
CN1812267A CNA2006100066540A CN200610006654A CN1812267A CN 1812267 A CN1812267 A CN 1812267A CN A2006100066540 A CNA2006100066540 A CN A2006100066540A CN 200610006654 A CN200610006654 A CN 200610006654A CN 1812267 A CN1812267 A CN 1812267A
Authority
CN
China
Prior art keywords
mos transistor
potential
output
inverter
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006100066540A
Other languages
English (en)
Chinese (zh)
Inventor
名野隆夫
女屋佳隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of CN1812267A publication Critical patent/CN1812267A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Logic Circuits (AREA)
CNA2006100066540A 2005-01-24 2006-01-23 驱动电路 Pending CN1812267A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005015282A JP2006203748A (ja) 2005-01-24 2005-01-24 駆動回路
JP2005015282 2005-01-24

Publications (1)

Publication Number Publication Date
CN1812267A true CN1812267A (zh) 2006-08-02

Family

ID=36696133

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006100066540A Pending CN1812267A (zh) 2005-01-24 2006-01-23 驱动电路

Country Status (5)

Country Link
US (1) US20060164135A1 (enExample)
JP (1) JP2006203748A (enExample)
KR (1) KR100715415B1 (enExample)
CN (1) CN1812267A (enExample)
TW (1) TW200642277A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101345475B (zh) * 2007-07-12 2012-09-12 瑞萨电子株式会社 电荷泵驱动电路
CN110350905A (zh) * 2018-04-03 2019-10-18 中国科学院声学研究所 一种mems电容式加速度计接口电路

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200820571A (en) * 2006-10-27 2008-05-01 Fitipower Integrated Tech Inc Driving device
US8183845B2 (en) * 2008-11-24 2012-05-22 Exelis, Inc. Low voltage power supply
KR101998078B1 (ko) 2012-12-10 2019-07-09 삼성전자 주식회사 하이브리드 차지 펌프 및 그 구동 방법, 파워 관리 회로, 및 디스플레이 장치
EP4224712B1 (en) * 2022-02-08 2025-10-01 NXP USA, Inc Circuits for inverters and pull-up/pull-down circuits
US12463631B2 (en) * 2022-10-14 2025-11-04 The Florida State University Research Foundation, Inc. Charge pump gate driver circuit with an adjustable pump voltage for active DV/DT control

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207315B (en) * 1987-06-08 1991-08-07 Philips Electronic Associated High voltage semiconductor with integrated low voltage circuitry
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
JPH04175010A (ja) * 1990-11-08 1992-06-23 Nec Ic Microcomput Syst Ltd 出力バッファ回路
JPH04263514A (ja) * 1991-02-19 1992-09-18 Toshiba Corp 論理回路
TW247975B (enExample) * 1992-07-14 1995-05-21 Philips Electronics Nv
JP3708561B2 (ja) * 1993-07-15 2005-10-19 株式会社ルネサステクノロジ 出力回路
JPH07111311A (ja) * 1993-10-13 1995-04-25 Fuji Electric Co Ltd 半導体装置およびその製造方法
JPH07307660A (ja) * 1994-05-11 1995-11-21 Mitsubishi Denki Semiconductor Software Kk 出力バッファ回路
JPH08316817A (ja) * 1995-05-19 1996-11-29 Sanyo Electric Co Ltd 出力回路及び半導体装置
JP3641511B2 (ja) * 1995-06-16 2005-04-20 株式会社ルネサステクノロジ 半導体装置
JPH09148909A (ja) * 1995-11-17 1997-06-06 Hitachi Ltd 半導体集積回路装置
KR100255507B1 (ko) * 1996-12-30 2000-05-01 김영환 고속 출력버퍼 회로
US6535034B1 (en) * 1997-07-30 2003-03-18 Programmable Silicon Solutions High performance integrated circuit devices adaptable to use lower supply voltages with smaller device geometries
JPH11274908A (ja) * 1998-03-18 1999-10-08 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2001036093A (ja) * 1999-07-23 2001-02-09 Sanyo Electric Co Ltd 半導体装置
JP2001145370A (ja) * 1999-11-19 2001-05-25 Mitsubishi Electric Corp 駆動回路
JP2002252555A (ja) * 2001-02-26 2002-09-06 Mitsubishi Electric Corp 出力回路
JP2003309460A (ja) * 2002-04-15 2003-10-31 Hitachi Ltd 半導体集積回路装置
US6753708B2 (en) * 2002-06-13 2004-06-22 Hewlett-Packard Development Company, L.P. Driver circuit connected to pulse shaping circuitry and method of operating same
JP3939208B2 (ja) * 2002-06-24 2007-07-04 富士通株式会社 出力パルスサイクルを短くできるパルス発生回路
WO2004054106A1 (ja) * 2002-12-09 2004-06-24 Fujitsu Limited 高速伝送回路
US7187139B2 (en) * 2003-09-09 2007-03-06 Microsemi Corporation Split phase inverters for CCFL backlight system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101345475B (zh) * 2007-07-12 2012-09-12 瑞萨电子株式会社 电荷泵驱动电路
CN110350905A (zh) * 2018-04-03 2019-10-18 中国科学院声学研究所 一种mems电容式加速度计接口电路
CN110350905B (zh) * 2018-04-03 2024-04-19 中国科学院声学研究所 一种mems电容式加速度计接口电路

Also Published As

Publication number Publication date
KR20060085578A (ko) 2006-07-27
TWI311006B (enExample) 2009-06-11
KR100715415B1 (ko) 2007-05-07
JP2006203748A (ja) 2006-08-03
US20060164135A1 (en) 2006-07-27
TW200642277A (en) 2006-12-01

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Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication