KR100715415B1 - 구동 회로 - Google Patents

구동 회로 Download PDF

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Publication number
KR100715415B1
KR100715415B1 KR1020060006693A KR20060006693A KR100715415B1 KR 100715415 B1 KR100715415 B1 KR 100715415B1 KR 1020060006693 A KR1020060006693 A KR 1020060006693A KR 20060006693 A KR20060006693 A KR 20060006693A KR 100715415 B1 KR100715415 B1 KR 100715415B1
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KR
South Korea
Prior art keywords
inverter
potential
mos transistor
output
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060006693A
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English (en)
Korean (ko)
Other versions
KR20060085578A (ko
Inventor
다까오 묘노
요시따까 오나야
Original Assignee
산요덴키가부시키가이샤
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Application filed by 산요덴키가부시키가이샤 filed Critical 산요덴키가부시키가이샤
Publication of KR20060085578A publication Critical patent/KR20060085578A/ko
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Dc-Dc Converters (AREA)
KR1020060006693A 2005-01-24 2006-01-23 구동 회로 Expired - Fee Related KR100715415B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00015282 2005-01-24
JP2005015282A JP2006203748A (ja) 2005-01-24 2005-01-24 駆動回路

Publications (2)

Publication Number Publication Date
KR20060085578A KR20060085578A (ko) 2006-07-27
KR100715415B1 true KR100715415B1 (ko) 2007-05-07

Family

ID=36696133

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060006693A Expired - Fee Related KR100715415B1 (ko) 2005-01-24 2006-01-23 구동 회로

Country Status (5)

Country Link
US (1) US20060164135A1 (enExample)
JP (1) JP2006203748A (enExample)
KR (1) KR100715415B1 (enExample)
CN (1) CN1812267A (enExample)
TW (1) TW200642277A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200820571A (en) * 2006-10-27 2008-05-01 Fitipower Integrated Tech Inc Driving device
JP5013603B2 (ja) * 2007-07-12 2012-08-29 ルネサスエレクトロニクス株式会社 チャージポンプ駆動回路、及びそれを用いた半導体装置
US8183845B2 (en) * 2008-11-24 2012-05-22 Exelis, Inc. Low voltage power supply
KR101998078B1 (ko) 2012-12-10 2019-07-09 삼성전자 주식회사 하이브리드 차지 펌프 및 그 구동 방법, 파워 관리 회로, 및 디스플레이 장치
CN110350905B (zh) * 2018-04-03 2024-04-19 中国科学院声学研究所 一种mems电容式加速度计接口电路
EP4224712B1 (en) * 2022-02-08 2025-10-01 NXP USA, Inc Circuits for inverters and pull-up/pull-down circuits
US12463631B2 (en) * 2022-10-14 2025-11-04 The Florida State University Research Foundation, Inc. Charge pump gate driver circuit with an adjustable pump voltage for active DV/DT control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980057056A (ko) * 1996-12-30 1998-09-25 김영환 고속 출력버퍼 회로
KR20010049440A (ko) * 1999-11-19 2001-06-15 다니구찌 이찌로오, 기타오카 다카시 구동회로

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207315B (en) * 1987-06-08 1991-08-07 Philips Electronic Associated High voltage semiconductor with integrated low voltage circuitry
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
JPH04175010A (ja) * 1990-11-08 1992-06-23 Nec Ic Microcomput Syst Ltd 出力バッファ回路
JPH04263514A (ja) * 1991-02-19 1992-09-18 Toshiba Corp 論理回路
TW247975B (enExample) * 1992-07-14 1995-05-21 Philips Electronics Nv
JP3708561B2 (ja) * 1993-07-15 2005-10-19 株式会社ルネサステクノロジ 出力回路
JPH07111311A (ja) * 1993-10-13 1995-04-25 Fuji Electric Co Ltd 半導体装置およびその製造方法
JPH07307660A (ja) * 1994-05-11 1995-11-21 Mitsubishi Denki Semiconductor Software Kk 出力バッファ回路
JPH08316817A (ja) * 1995-05-19 1996-11-29 Sanyo Electric Co Ltd 出力回路及び半導体装置
JP3641511B2 (ja) * 1995-06-16 2005-04-20 株式会社ルネサステクノロジ 半導体装置
JPH09148909A (ja) * 1995-11-17 1997-06-06 Hitachi Ltd 半導体集積回路装置
US6535034B1 (en) * 1997-07-30 2003-03-18 Programmable Silicon Solutions High performance integrated circuit devices adaptable to use lower supply voltages with smaller device geometries
JPH11274908A (ja) * 1998-03-18 1999-10-08 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2001036093A (ja) * 1999-07-23 2001-02-09 Sanyo Electric Co Ltd 半導体装置
JP2002252555A (ja) * 2001-02-26 2002-09-06 Mitsubishi Electric Corp 出力回路
JP2003309460A (ja) * 2002-04-15 2003-10-31 Hitachi Ltd 半導体集積回路装置
US6753708B2 (en) * 2002-06-13 2004-06-22 Hewlett-Packard Development Company, L.P. Driver circuit connected to pulse shaping circuitry and method of operating same
JP3939208B2 (ja) * 2002-06-24 2007-07-04 富士通株式会社 出力パルスサイクルを短くできるパルス発生回路
JP4169208B2 (ja) * 2002-12-09 2008-10-22 富士通株式会社 高速伝送回路
US7187139B2 (en) * 2003-09-09 2007-03-06 Microsemi Corporation Split phase inverters for CCFL backlight system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980057056A (ko) * 1996-12-30 1998-09-25 김영환 고속 출력버퍼 회로
KR20010049440A (ko) * 1999-11-19 2001-06-15 다니구찌 이찌로오, 기타오카 다카시 구동회로

Also Published As

Publication number Publication date
TWI311006B (enExample) 2009-06-11
TW200642277A (en) 2006-12-01
US20060164135A1 (en) 2006-07-27
JP2006203748A (ja) 2006-08-03
CN1812267A (zh) 2006-08-02
KR20060085578A (ko) 2006-07-27

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