TWI311006B - - Google Patents

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Publication number
TWI311006B
TWI311006B TW094147472A TW94147472A TWI311006B TW I311006 B TWI311006 B TW I311006B TW 094147472 A TW094147472 A TW 094147472A TW 94147472 A TW94147472 A TW 94147472A TW I311006 B TWI311006 B TW I311006B
Authority
TW
Taiwan
Prior art keywords
potential
transistor
inverter
output
power supply
Prior art date
Application number
TW094147472A
Other languages
English (en)
Chinese (zh)
Other versions
TW200642277A (en
Inventor
Takao Myono
Yoshitaka Onaya
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200642277A publication Critical patent/TW200642277A/zh
Application granted granted Critical
Publication of TWI311006B publication Critical patent/TWI311006B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Dc-Dc Converters (AREA)
TW094147472A 2005-01-24 2005-12-30 Driving circuit TW200642277A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005015282A JP2006203748A (ja) 2005-01-24 2005-01-24 駆動回路

Publications (2)

Publication Number Publication Date
TW200642277A TW200642277A (en) 2006-12-01
TWI311006B true TWI311006B (enExample) 2009-06-11

Family

ID=36696133

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094147472A TW200642277A (en) 2005-01-24 2005-12-30 Driving circuit

Country Status (5)

Country Link
US (1) US20060164135A1 (enExample)
JP (1) JP2006203748A (enExample)
KR (1) KR100715415B1 (enExample)
CN (1) CN1812267A (enExample)
TW (1) TW200642277A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200820571A (en) * 2006-10-27 2008-05-01 Fitipower Integrated Tech Inc Driving device
JP5013603B2 (ja) * 2007-07-12 2012-08-29 ルネサスエレクトロニクス株式会社 チャージポンプ駆動回路、及びそれを用いた半導体装置
US8183845B2 (en) * 2008-11-24 2012-05-22 Exelis, Inc. Low voltage power supply
KR101998078B1 (ko) 2012-12-10 2019-07-09 삼성전자 주식회사 하이브리드 차지 펌프 및 그 구동 방법, 파워 관리 회로, 및 디스플레이 장치
CN110350905B (zh) * 2018-04-03 2024-04-19 中国科学院声学研究所 一种mems电容式加速度计接口电路
EP4224712B1 (en) * 2022-02-08 2025-10-01 NXP USA, Inc Circuits for inverters and pull-up/pull-down circuits
US12463631B2 (en) * 2022-10-14 2025-11-04 The Florida State University Research Foundation, Inc. Charge pump gate driver circuit with an adjustable pump voltage for active DV/DT control

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2207315B (en) * 1987-06-08 1991-08-07 Philips Electronic Associated High voltage semiconductor with integrated low voltage circuitry
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
JPH04175010A (ja) * 1990-11-08 1992-06-23 Nec Ic Microcomput Syst Ltd 出力バッファ回路
JPH04263514A (ja) * 1991-02-19 1992-09-18 Toshiba Corp 論理回路
TW247975B (enExample) * 1992-07-14 1995-05-21 Philips Electronics Nv
JP3708561B2 (ja) * 1993-07-15 2005-10-19 株式会社ルネサステクノロジ 出力回路
JPH07111311A (ja) * 1993-10-13 1995-04-25 Fuji Electric Co Ltd 半導体装置およびその製造方法
JPH07307660A (ja) * 1994-05-11 1995-11-21 Mitsubishi Denki Semiconductor Software Kk 出力バッファ回路
JPH08316817A (ja) * 1995-05-19 1996-11-29 Sanyo Electric Co Ltd 出力回路及び半導体装置
JP3641511B2 (ja) * 1995-06-16 2005-04-20 株式会社ルネサステクノロジ 半導体装置
JPH09148909A (ja) * 1995-11-17 1997-06-06 Hitachi Ltd 半導体集積回路装置
KR100255507B1 (ko) * 1996-12-30 2000-05-01 김영환 고속 출력버퍼 회로
US6535034B1 (en) * 1997-07-30 2003-03-18 Programmable Silicon Solutions High performance integrated circuit devices adaptable to use lower supply voltages with smaller device geometries
JPH11274908A (ja) * 1998-03-18 1999-10-08 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2001036093A (ja) * 1999-07-23 2001-02-09 Sanyo Electric Co Ltd 半導体装置
JP2001145370A (ja) * 1999-11-19 2001-05-25 Mitsubishi Electric Corp 駆動回路
JP2002252555A (ja) * 2001-02-26 2002-09-06 Mitsubishi Electric Corp 出力回路
JP2003309460A (ja) * 2002-04-15 2003-10-31 Hitachi Ltd 半導体集積回路装置
US6753708B2 (en) * 2002-06-13 2004-06-22 Hewlett-Packard Development Company, L.P. Driver circuit connected to pulse shaping circuitry and method of operating same
JP3939208B2 (ja) * 2002-06-24 2007-07-04 富士通株式会社 出力パルスサイクルを短くできるパルス発生回路
JP4169208B2 (ja) * 2002-12-09 2008-10-22 富士通株式会社 高速伝送回路
US7187139B2 (en) * 2003-09-09 2007-03-06 Microsemi Corporation Split phase inverters for CCFL backlight system

Also Published As

Publication number Publication date
TW200642277A (en) 2006-12-01
US20060164135A1 (en) 2006-07-27
JP2006203748A (ja) 2006-08-03
CN1812267A (zh) 2006-08-02
KR20060085578A (ko) 2006-07-27
KR100715415B1 (ko) 2007-05-07

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees