CN1797758A - 具有半－刻蚀键合焊盘和切割电镀线的bga封装及其制造方法 - Google Patents

具有半－刻蚀键合焊盘和切割电镀线的bga封装及其制造方法 Download PDF

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CN1797758A
CN1797758A CNA2005100874425A CN200510087442A CN1797758A CN 1797758 A CN1797758 A CN 1797758A CN A2005100874425 A CNA2005100874425 A CN A2005100874425A CN 200510087442 A CN200510087442 A CN 200510087442A CN 1797758 A CN1797758 A CN 1797758A
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Prior art keywords
etched
solder ball
pads
plating line
welding pad
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李孝洙
朴成垠
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Samsung Electro Mechanics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Publication of CN1797758A publication Critical patent/CN1797758A/zh
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Abstract

公开了一种具有半－刻蚀键合焊盘和切割电镀线的BGA封装及其制造方法。在BGA封装中，在设计步骤切割电镀线，以使用半－刻蚀形成预定的不均匀键合焊盘，由此增加键合焊盘和焊球之间的接触面积。因此，保证键合焊盘的优异表面性能和良好的点滴测试特性。BGA封装包括：第一外层，其包括第一电路图形和引线键合焊盘图形，其中使用引线键合将芯片连接到引线键合焊盘；第二外层，其包括第二电路图形、切割电镀线图形以及半－刻蚀不均匀焊球焊盘图形。在第二外层中，在焊球焊盘上安装另外的芯片。具有穿通孔的绝缘层，该穿通孔插入第一和第二外层之间以及穿过其电连接第一和第二外层。

Description

具有半-刻蚀键合焊盘和切割电镀线的 BGA封装及其制造方法
技术领域
本发明涉及具有半-刻蚀键合焊盘和切割电镀线的BGA封装及其制造方法。更具体，本发明涉及BGA封装，其中电镀线在设计步骤被切割，以使用半-刻蚀法形成预定的不均匀键合焊盘，由此增加键合焊盘和焊球之间的接触面积，保证键合焊盘的优异表面性能和良好的点滴测试性能，以及涉及制造该BGA封装的方法。
背景技术
OSP(有机可焊性防腐剂)表面处理工艺是能用来代替常规镍/金表面处理的技术，以及可以用于蜂窝电话和便携式电子部件，以便在点滴测试中实现优异的性能。但是，将其中在铜焊盘上涂敷有机物的OSP工艺应用于常规封装工艺是困难的。该原因是当铜焊盘经受封装步骤，如烘焙、引线键合、管芯粘附固化以及后模具固化时，铜焊盘上的OSP层被热和物理地致命损坏，因此在焊料连接工艺中它不容易被后焊剂除去。由于该缺点在焊料表面上形成不湿润的区域和连接性能的老化，其必须避免。最近，为了避免上述缺点，建议在OSP工艺之前半-刻蚀铜焊盘，由此改进OSP产品的性能。但是严重的化学反应，如半-刻蚀，取决于产品的设计。
图1是根据常规技术的第一实施例、使用金镀层处理表面的BGA封装的剖面图。
如图1所示，在绝缘层101的上侧面上设置电路图形103a和用金105a电镀的引线键合焊盘图形，待安装的芯片110通过引线106连接到引线键合焊盘，以及在绝缘层101的下侧面上设置包括电路图形103b的焊球焊盘图形和用金105b电镀的键合焊盘。焊球107安装在球焊盘上。此外，通过绝缘层101形成用于通过其电连接绝缘层101的上下侧边的穿通孔。
据此，使用金镀层105b表面处理焊球焊盘。如果使用金镀层105b表面处理焊球焊盘，那么在金镀层105b的形成中，电镀线起阻抗的作用，因此电性能是差的以及出现不合需要的性能，例如模具的弯曲。另外，不希望地，在点滴测试过程中焊球与球焊盘分开。
为了避免上述问题，如图2所示，进行OSP表面处理。
图2是根据常规技术的第二实施例，经受OSP表面处理工艺的BGA封装的剖面图。
如图2所示，在绝缘层201的上侧面上设置了电路图形203a和用金205a电镀的引线键合焊盘图形，待安装的芯片210通过引线207键合到引线键合焊盘，以及在绝缘层201的下侧面上设置了包括电路图形203b的焊球焊盘图形和用OSP 206处理的键合焊盘。焊球208安装在球形焊盘上。此外，通过绝缘层201形成用于通过其电连接绝缘层201的上下侧边穿通孔。
但是，如图3所示，在使用有机可焊性防腐剂(OSP)的BGA封装工艺中，在一列式工序或后端工序过程中，在其中将形成焊球焊盘的电镀层上涂敷的有机可焊性防腐剂(OSP)被热损坏。尤其，在后端工序中包括的175℃或更高的高温下进行后模具固化(PMC)工序过程中它被致命地热损坏。
换句话说，如图4所示，在其中形成BGA封装衬底的键合指状物或焊球焊盘的电镀层上，如球剪切测试所示，在一列式工序或后端工序过程中剩余热损坏的有机可焊性防腐剂(OSP)。
在这方面，如图5所示，当焊球被键合到不被纵向刻蚀的平面铜镀层203b时，同时热损坏的有机可焊性防腐剂(OSP)206剩下，那么由于剩余的有机可焊性防腐剂206，因此减小铜镀层203b和焊球208之间的键合面积。此外，包含于铜中的锡和构成铜镀层203b的焊球208与其他金属的相互作用被抑制，以阻止金属间化物(intermetallic compound)1200的形成。
由此，如图6所示，焊球208不粘附到铜镀层203b或受外部影响容易从那里分开，因此导致可靠性减小，如在焊料表面上形成不湿润的区域以及降低连接性能。
发明内容
由此，本发明关注现有技术中发生的上述问题，以及本发明的目的是提供一种具有半-刻蚀键合焊盘和切割电镀线的BGA封装，该BGA封装具有优异的电性能以及其中不发生模具的弯曲，以及在点滴测试过程中焊球不会与焊盘分开，以及提供制造该BGA封装的方法。
为了实现上述目的，本发明提供一种具有半-刻蚀键合焊盘和切割电镀线的BGA封装。该BGA封装包括第一外层，第一外层包括第一电路图形和引线键合焊盘图形，以及其中芯片使用引线键合连接到引线键合焊盘；第二外层，第二外层包括第二电路图形、切割电镀线图形以及半-刻蚀不均匀焊球焊盘图形，其中在焊球焊盘上安装另一芯片；以及具有穿通孔的绝缘层，穿通孔插入第一和第二外层之间并通过其电连接第一和第二外层。
此外，本发明提供一种制造具有半-刻蚀键合焊盘和切割电镀线的BGA封装的方法。该方法包括(A)提供包括第一外层、第二外层和在第一和第二外层之间插入的绝缘层的衬底；(B)形成用于通过其电连接第一和第二外层的穿通孔；(C)在第一外层上形成包括第一电路图形和引线键合焊盘图形的第一图形，以及在第二外层上形成包括第二电路图形、切割电镀线图形和焊球焊盘图形的第二图形；(D)在第一和第二外层上涂敷抗焊剂，以及半刻蚀第二外层的焊球焊盘图形；以及(E)金-电镀第一外层的引线键合焊盘图形，由第二外层的焊球焊盘图形形成不均匀的焊球焊盘，以表面-处理所得结构。
附图说明
从下面结合附图的详细说明将更清楚地理解本发明的上述及其他目的、特点及其他优点，其中：
图1是根据常规技术的第一实施例使用金电镀表面处理的BGA封装的剖面图。
图2是根据常规技术的第二实施例，经受OSP表面处理工艺的BGA封装的剖面图。
图3说明在逐步的方式中，由于常规BGA封装工艺的热固化处理热损伤键合焊盘；
图4说明焊球和键合焊盘之间的连接被有机可焊性防腐剂毁坏，该有机可焊性防腐剂由于常规BGA封装工艺的热固化处理被热损坏；
图5是说明具有通过常规BGA封装工艺制造的一维形状的键合焊盘的图片；
图6是焊球粘附到键合焊盘的扩大图片，该键合焊盘具有通过常规BGA封装工艺制造的一维形状；
图7是BGA封装的剖面图，该BGA封装包括根据本发明的方法制造的半-刻蚀的键合焊盘和切割电镀线；
图8A至8N是说明根据本发明制造BGA封装的剖面图，该BGA封装包括半刻蚀的键合焊盘和切割电镀线；
图9是说明根据本发明的BGA封装的焊球，该BGA封装包括半刻蚀的键合焊盘和切割电镀线；以及
图10是根据本发明的BGA封装的半刻蚀的光学图片，该BGA封装包括半-刻蚀的键合焊盘和切割电镀线。
具体实施方式
下面，将参考附图给出本发明的详细描述。
图7是BGA封装的剖面图，包括根据本发明的方法制造的切割电镀线。
如图7所示，电路图形803a和引线键合焊盘图形设置在绝缘层801的上侧面上，芯片820通过引线809连接到引线键合焊盘，以及电路图形803b、切割电镀线图形(B)、半-刻蚀的不均匀焊球焊盘图形设置在绝缘层801的下侧面上。焊球808安装在球焊盘上。
此外，穿过绝缘层801形成用于通过其电连接绝缘层801的上下侧面的穿通孔。金镀层806形成在引线键合焊盘图形上，以及焊球808具有延伸至用焊料掩模涂敷的键合焊盘的侧表面的鸟嘴形状。
由于上述结构特性，在点滴测试过程中焊球808不与焊球焊盘分离。
图8A至8N是说明根据本发明制造BGA封装的剖面图，该BGA封装包括切割电镀线。
如图8A所示，制备衬底800，衬底800是敷铜箔叠片，其中在绝缘树脂层801的两侧上涂敷铜箔802a、802b。
在这方面，敷铜箔叠片根据其应用分为玻璃/环氧树脂敷铜箔叠片、耐热树脂敷铜箔叠片、纸/苯酚敷铜箔叠片、高频敷铜箔叠片、柔性敷铜箔叠片(聚酰亚胺薄膜)以及复杂的敷铜箔叠片。但是，玻璃/环氧树脂敷铜箔叠片经常用于制造双面印刷电路板和多层印刷电路板。
此外，在本发明中使用没有内层的衬底800，但是根据目的和应用可以使用具有由2、4或6层构成的内层的多层衬底。
接下来，如图8B所示，机械地形成穿通孔(A)，以电连接CCL的上下侧面，作为内部铁心材料。
为了电连接引线，必须通过衬底的上下部分精确地形成垂直穿通孔(A)。另外，进行去毛刺工序，以除去钻孔工序过程中产生的铜箔的毛边、孔的壁上的尘粒以及铜箔表面上的灰尘和指印。由于在钻孔工序过程中产生大量热量，树脂熔融、流动和变得粘附到孔壁，导致污迹。因此，明确地减小孔壁上的铜镀层的质量。由此，必须进行去污，以除去污迹。
接着，如图8C所示，衬底800的表面和穿通孔(A)的壁经受无电电镀工序和电解电镀工序，由此形成用于电连接的铜镀层803a、803b。
据此，首先进行无电镀铜工序，然后实现电解铜电镀工序。在电解铜电镀工序之前进行无电镀铜工序的原因是在绝缘层上不可能使用电流进行电解铜电镀工序。换句话说，进行无电镀铜工序作为预处理，以便形成实现电解铜电镀工序需要的薄导电薄膜。由于无电镀铜工序具有困难的处理工艺和经济效率低的缺点，因此为了形成导电部分采用电解铜电镀工序是优选的。
接下来，如图8D所示，涂敷具有预定图形的干膜804a、804b。
每个干膜804a、804b由三层构成：覆盖膜、光刻胶膜以及聚脂膜，光刻胶膜主要用作抗蚀剂。
如图8E所示，形成具有预定图形的外层电路803a、803b。
形成外层电路803a、803b的过程如下。首先，在其上具有印刷的预定图形的干膜804a、804b被曝光并显影，以构图干膜804a、804b。接着，具有预定图形的干膜804a、804b用作刻蚀抗蚀剂，以及在衬底800上溅射刻蚀剂，以刻蚀部分上和下铜箔802a、802b和铜镀层803a、803b，该部分不对应干膜804a、804b的预定图形的位置，因此除去它们。此后，干膜804a、804b被剥离，且因此被从衬底800的上下侧边除去，由此形成外层电路803a、803b。
此外，通过预定图形切割电镀线(B)。
如果在不切割电镀线(B)的条件下进行半-刻蚀，那么由于电偶腐蚀发生过刻蚀。那通过使具有不同物理性能的两种金属互相接触，完成电偶腐蚀，以促进金属的氧化。在本发明中，两种金属，Au与Cu互相接触。由于，在设计步骤中存在用于常规金镀层的电镀线(B)，因此当由镀铜构成的焊球焊盘被半-刻蚀时，发生电偶腐蚀。因此，如果电镀线(B)被切割，那么可以防止由电偶腐蚀引起的过刻蚀。
此外，使用干膜804a、804b作为刻蚀抗蚀剂，但是可以使用光敏材料液体作为刻蚀抗蚀剂。
此后，如图8F所示，涂敷焊料抗蚀剂805a，805b，然后伪-干燥。
如果其上在铜箔802a、802b和铜镀层803a、803b上形成电路图形的衬底800被指印、油和灰尘玷污，那么衬底800不可以精密地粘附到在后续工序中形成的抗焊剂805a、805b。因此，在涂敷抗焊剂805a，805b之前，优选执行预处理，其中衬底的表面被冲洗和变粗糙，以便增加抗焊剂805a、805b和衬底800之间的粘合强度。
接下来，如图8G所示，使用激光形成开口(C)和开口(D)，开口(C)对应于引线键合焊盘的位置，开口(D)对应于焊球焊盘的位置。
在这方面，由于在高速下使用激光可能产生热量，容易处理具有窄热应变层的非常硬的材料。由于以无接触方式执行激光的使用，希望地，工具不被磨损，可以精细地处理具有复杂形状的部件和当工作时不产生噪音和振动。
此外，如果激光束照射材料表面，那么材料的表面温度迅速地增加，因此表面部分同时被熔化和蒸发，由此从其表面除去目标物质。
优选使用等离子体从除去抗焊剂层805a、805b的部分衬底801除去剩余的沙子和杂质。
接着，如图8H所示，在引线键合焊盘上形成金镀层806。
在这方面，衬底800被浸入金电镀浴盆中，以及使用直流整流器执行电解金电镀，由此形成金镀层806。据此，更优选通过在计算待电镀区域之后施加适当的电流到直流整流器以淀积金。
同样，优选在薄薄地电镀镍之后形成金镀层806，以便增加与金的粘合强度。
接下来，如图8I所示，在焊球焊盘经受半-刻蚀工序之后，使用OSP 807进行处理。
在OSP 807工序中，在印刷电路板的焊球焊盘的表面上涂敷有机物，以防止空气和铜表面接触，由此防止铜被氧化。如果在OSP 807工序中，以有机物均匀地覆盖铜表面的方式，在PCB焊盘的表面上涂敷有机物，那么铜箔可能被氧化，引起问题。因此，在真空封装未密封之后使用OSP是优选的。
此外，如果在处理它的过程中用户的手接触到OSP，那么由于手上的盐迅速地发生氧化，因此必须小心处理。
此后，如图8J所示，在焊球焊盘上涂敷具有预定粘滞度的后焊剂1807。
后焊剂1807包含酒精和酸性组分，因此溶解咪唑的OSP 807，由此除去由于由预模制固化工序引起的高温被热损坏的OSP 807，以及剩余在键合焊盘上。
如图8K所示，BGA封装衬底在约230-260℃下经受IR回流工序30秒，由此形成BGA封装，其中焊球通过IR回流工序形成的金属间化物粘附到焊球焊盘。
当不均匀地形成键合焊盘时，通过构成键合焊盘的铜的金属和焊球808中包含的锡之间的交互作用形成金属间化物，金属间化物延伸到覆盖键合焊盘和不均匀键合焊盘的焊料掩模的预定部分。
此外，焊接到不均匀键合焊盘的每个焊球808，具有鸟嘴形状，延伸到涂有焊料掩模的键合焊盘的预定部分。因此，他们不容易通过外部冲击与键合焊盘隔开，由此保证良好的点滴测试特性。
接下来，如图8L所示，使用添加剂810在上抗焊剂805a上安装半导体芯片820。
此后，如图8M所示，半导体芯片820通过引线809键合到引线键合焊盘上的金镀层806。
最后，如图8N所示，使用密封剂830模制最终结构，由此制造根据本发明的BGA封装。
图9说明根据本发明的BGA封装的焊球，该BGA封装包括半-刻蚀键合焊盘和切割电镀线。
由该图，可以看到电镀线被切割，这是本发明的特性。
另外，图10是说明根据本发明的BGA封装的半刻蚀的光学图片，该BGA封装包括半-刻蚀键合焊盘和切割电镀线。
在该图中，用于在绝缘层801上形成焊球焊盘的铜镀层803b被半-刻蚀，以及在除了焊球焊盘之外的部分上涂敷抗焊剂805b。此外，通过切割电镀线防止由电偶腐蚀引起的过刻蚀。当用于形成焊球焊盘的铜镀层803b被半刻蚀，同时电镀线被切割时，刻蚀深度是10-15μm。
本发明以说明性的方式进行了描述，但是应当理解使用的术语确定为具有描述的性质而不是限制的性质。根据上述教导本发明的许多改进和改变都是可能的。因此，应当理解在附加权利要求的范围内，除明确地描述之外可以实施发明。
如上所述，根据本发明具有半-刻蚀键合焊盘和切割电镀线的BGA封装及其制造方法是有利的，由于使用OSP表面处理了焊球焊盘，由此防止模具弯曲。
另一个优点通过它的不均匀形状增加焊球的粘附区，亦即，哑铃形状，因此在点滴测试中焊球不分离。
另一个优点是由于在设计步骤电镀线被切割，因此可以立即完成商品化。此外，由于电镀线被切割，以便防止电偶腐蚀，因此在半-刻蚀工序过程中铜镀层被恒定地刻蚀(10-15μm)。

Claims (9)

1.一种具有半-刻蚀键合焊盘和切割电镀线的BGA封装，包括：
第一外层，包括第一电路图形和引线键合焊盘图形，以及其中使用引线键合将芯片连接到引线键合焊盘；
第二外层，包括第二电路图形、切割电镀线图形和半-刻蚀的不均匀焊球焊盘图形，以及其中在焊球焊盘上安装另一个芯片；以及
具有穿通孔的绝缘层，所述穿通孔被插入第一和第二外层之间以及穿过其电连接第一和第二外层。
2.根据权利要求1所述的BGA封装，还包括在引线键合焊盘图形和焊球焊盘图形上形成的第一电镀层。
3.根据权利要求2所述的BGA封装，还包括在引线键合焊盘图形和金镀层之间以及焊球焊盘图形和第一电镀层之间插入的第二电镀层。
4.根据权利要求1所述的BGA封装，其中焊球粘附到具有鸟嘴形状的半-刻蚀键合焊盘，延伸到涂有焊料掩模的半-刻蚀键合焊盘的外侧面。
5.根据权利要求1所述的BGA封装，其中形成在半-刻蚀键合焊盘和焊球之间插入的金属间化物，以便延伸到涂有焊料掩模的半-刻蚀键合焊盘的外侧面。
6.一种制造具有半-刻蚀键合焊盘和切割电镀线的BGA封装的方法，包括：
(A)提供包括第一外层、第二外层以及在第一和第二外层之间插入的绝缘层的衬底；
(B)形成用于穿过其电连接第一和第二外层的穿通孔；
(C)在第一外层上形成包括第一电路图形和引线键合焊盘图形的第一图形，以及在第二外层上形成包括第二电路图形、切割电镀线图形以及焊球焊盘图形的第二图形；
(D)在第一和第二外层上涂敷抗焊剂，以及半-刻蚀第二外层的焊球焊盘图形；以及
(E)金-电镀第一外层的引线键合焊盘图形，以及由第二外层的焊球焊盘图形形成不均匀焊球焊盘，以表面-处理最终结构。
7.根据权利要求6所述的方法，还包括：
(F)在第一外层上安装第一芯片，以及使用引线键合将第一芯片连接到引线键合焊盘；
(G)在第二外层的焊球焊盘图形上安装第二芯片；以及
(H)在步骤(E)之后使用密封剂模制最终结构。
8.根据权利要求6所述的方法，其中绝缘层具有由多个层构成的内部层。
9.根据权利要求6所述的方法，其中在步骤(E)中在不均匀半-刻蚀键合焊盘上涂敷的表面处理部件是有机可焊性防腐剂(OSP)。
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CN102378493A (zh) * 2010-08-20 2012-03-14 三星电机株式会社 制造印刷电路板的方法
CN102593090A (zh) * 2011-01-06 2012-07-18 嘉盛马来西亚公司 具有安装在隔离引线的基座上的管芯的引线框封装
CN102593090B (zh) * 2011-01-06 2016-05-04 嘉盛马来西亚公司 具有安装在隔离引线的基座上的管芯的引线框封装
CN103227160A (zh) * 2013-03-18 2013-07-31 三星半导体(中国)研究开发有限公司 一种混合的表面镀层及其制造方法
CN103227160B (zh) * 2013-03-18 2016-03-16 三星半导体(中国)研究开发有限公司 一种混合的表面镀层及其制造方法
CN106163108A (zh) * 2015-04-10 2016-11-23 深圳市安特讯科技有限公司 线路及其制作方法
CN109192677A (zh) * 2018-09-11 2019-01-11 长江存储科技有限责任公司 封装体检测装置

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US20090093110A1 (en) 2009-04-09
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