CN1790749B - 有机薄膜晶体管、其制造方法和平板显示器 - Google Patents
有机薄膜晶体管、其制造方法和平板显示器 Download PDFInfo
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- CN1790749B CN1790749B CN200510119451.8A CN200510119451A CN1790749B CN 1790749 B CN1790749 B CN 1790749B CN 200510119451 A CN200510119451 A CN 200510119451A CN 1790749 B CN1790749 B CN 1790749B
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040091522A KR100603393B1 (ko) | 2004-11-10 | 2004-11-10 | 유기박막 트랜지스터 및 그의 제조방법과 유기 박막트랜지스터를 구비한 유기전계 발광표시장치 |
KR10-2004-0091522 | 2004-11-10 | ||
KR1020040091522 | 2004-11-10 |
Publications (2)
Publication Number | Publication Date |
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CN1790749A CN1790749A (zh) | 2006-06-21 |
CN1790749B true CN1790749B (zh) | 2011-02-02 |
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CN200510119451.8A Active CN1790749B (zh) | 2004-11-10 | 2005-11-10 | 有机薄膜晶体管、其制造方法和平板显示器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7485507B2 (zh) |
JP (1) | JP4137915B2 (zh) |
KR (1) | KR100603393B1 (zh) |
CN (1) | CN1790749B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100603393B1 (ko) * | 2004-11-10 | 2006-07-20 | 삼성에스디아이 주식회사 | 유기박막 트랜지스터 및 그의 제조방법과 유기 박막트랜지스터를 구비한 유기전계 발광표시장치 |
GB0427563D0 (en) * | 2004-12-16 | 2005-01-19 | Plastic Logic Ltd | A method of semiconductor patterning |
JP2007035742A (ja) * | 2005-07-25 | 2007-02-08 | Seiko Epson Corp | 薄膜トランジスタの形成方法 |
KR100752374B1 (ko) * | 2005-11-11 | 2007-08-27 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터의 제조방법 |
KR100787439B1 (ko) * | 2005-12-15 | 2007-12-26 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 구비한 유기 발광디스플레이 장치 |
KR101279296B1 (ko) * | 2006-04-17 | 2013-06-26 | 엘지디스플레이 주식회사 | 유기 반도체 구조물, 이의 제조 방법, 이를 이용한 유기박막 트랜지스터 및 이의 제조 방법 및 이를 이용한표시장치 |
JP2007324453A (ja) * | 2006-06-02 | 2007-12-13 | Kyushu Univ | 有機電界効果トランジスタ並びにそれを用いた集積回路及び電子デバイス |
KR101279927B1 (ko) * | 2006-10-16 | 2013-07-04 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
KR100781953B1 (ko) * | 2006-12-29 | 2007-12-06 | 전자부품연구원 | 유기 박막 트랜지스터 및 그 제조방법 |
JP5521270B2 (ja) * | 2007-02-21 | 2014-06-11 | 凸版印刷株式会社 | 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、および薄膜トランジスタアレイを用いたアクティブマトリクス型ディスプレイ |
EP2254727A2 (en) * | 2008-02-18 | 2010-12-01 | The Technical University of Denmark (DTU) | Method of thermocleaving a polymer layer |
TW201119110A (en) * | 2009-11-18 | 2011-06-01 | Metal Ind Res & Dev Ct | Fabrication method of organic thin-film transistors |
JP5656049B2 (ja) | 2010-05-26 | 2015-01-21 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
JP5884306B2 (ja) * | 2011-06-13 | 2016-03-15 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、ならびに電子機器 |
JP6076038B2 (ja) | 2011-11-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP6033071B2 (ja) * | 2011-12-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5603897B2 (ja) * | 2012-03-23 | 2014-10-08 | 株式会社東芝 | 有機電界発光素子及び照明装置 |
KR101996438B1 (ko) | 2012-12-13 | 2019-07-05 | 삼성디스플레이 주식회사 | 표시 장치용 기판, 이를 포함한 표시 장치 및 표시 장치의 제조 방법 |
TWI756922B (zh) * | 2020-11-17 | 2022-03-01 | 友達光電股份有限公司 | 有機半導體裝置 |
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US5329140A (en) * | 1991-10-01 | 1994-07-12 | Nec Corporation | Thin film transistor and its production method |
EP0716459A2 (en) * | 1994-12-09 | 1996-06-12 | AT&T Corp. | Article comprising organic thin film transistors |
CN1445596A (zh) * | 2002-03-14 | 2003-10-01 | 株式会社半导体能源研究所 | 显示器件及其制作方法 |
CN1469492A (zh) * | 2002-06-21 | 2004-01-21 | 三洋电机株式会社 | 薄膜晶体管及薄膜晶体管的制造方法 |
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GB9626344D0 (en) * | 1996-12-19 | 1997-02-05 | Philips Electronics Nv | Electronic devices and their manufacture |
JP2000269504A (ja) | 1999-03-16 | 2000-09-29 | Hitachi Ltd | 半導体装置、その製造方法及び液晶表示装置 |
US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
GB9928353D0 (en) * | 1999-12-01 | 2000-01-26 | Koninkl Philips Electronics Nv | Liquid crystal display and method of manufacture |
JP4951834B2 (ja) | 2001-09-19 | 2012-06-13 | 日本電気株式会社 | 薄膜トランジスタ |
JP2003309268A (ja) | 2002-02-15 | 2003-10-31 | Konica Minolta Holdings Inc | 有機トランジスタ素子及びその製造方法 |
KR100524552B1 (ko) | 2002-09-28 | 2005-10-28 | 삼성전자주식회사 | 유기 게이트 절연막 및 이를 이용한 유기박막 트랜지스터 |
US7037767B2 (en) * | 2003-03-24 | 2006-05-02 | Konica Minolta Holdings, Inc. | Thin-film transistor, thin-film transistor sheet and their manufacturing method |
KR100947567B1 (ko) | 2003-03-28 | 2010-03-12 | 매그나칩 반도체 유한회사 | 고전압 소자 및 그 제조 방법 |
US7384814B2 (en) | 2003-05-20 | 2008-06-10 | Polymer Vision Limited | Field effect transistor including an organic semiconductor and a dielectric layer having a substantially same pattern |
US6927108B2 (en) * | 2003-07-09 | 2005-08-09 | Hewlett-Packard Development Company, L.P. | Solution-processed thin film transistor formation method |
JP4385812B2 (ja) * | 2004-03-26 | 2009-12-16 | 株式会社日立製作所 | 薄膜トランジスタおよびその製造方法 |
KR100603393B1 (ko) * | 2004-11-10 | 2006-07-20 | 삼성에스디아이 주식회사 | 유기박막 트랜지스터 및 그의 제조방법과 유기 박막트랜지스터를 구비한 유기전계 발광표시장치 |
KR100669752B1 (ko) * | 2004-11-10 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치 |
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2004
- 2004-11-10 KR KR1020040091522A patent/KR100603393B1/ko active IP Right Grant
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2005
- 2005-06-02 JP JP2005163324A patent/JP4137915B2/ja active Active
- 2005-06-13 US US11/150,179 patent/US7485507B2/en active Active
- 2005-11-10 CN CN200510119451.8A patent/CN1790749B/zh active Active
Patent Citations (4)
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US7485507B2 (en) | 2009-02-03 |
JP4137915B2 (ja) | 2008-08-20 |
KR100603393B1 (ko) | 2006-07-20 |
CN1790749A (zh) | 2006-06-21 |
US20060097254A1 (en) | 2006-05-11 |
JP2006140433A (ja) | 2006-06-01 |
KR20060042751A (ko) | 2006-05-15 |
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