JP5884306B2 - 薄膜トランジスタおよびその製造方法、ならびに電子機器 - Google Patents
薄膜トランジスタおよびその製造方法、ならびに電子機器 Download PDFInfo
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- JP5884306B2 JP5884306B2 JP2011131103A JP2011131103A JP5884306B2 JP 5884306 B2 JP5884306 B2 JP 5884306B2 JP 2011131103 A JP2011131103 A JP 2011131103A JP 2011131103 A JP2011131103 A JP 2011131103A JP 5884306 B2 JP5884306 B2 JP 5884306B2
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- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Description
1.薄膜トランジスタの構成
2.薄膜トランジスタの製造方法
3.変形例
4.薄膜トランジスタの適用例(電子機器)
4−1.液晶表示装置
4−2.有機EL表示装置
4−3.電子ペーパー表示装置
まず、本技術の一実施形態の薄膜トランジスタの構成について説明する。図1は、薄膜トランジスタの断面構成を表している。
次に、上記した薄膜トランジスタの製造方法について説明する。図2および図3は、薄膜トランジスタである有機TFTの製造方法を説明するためのものであり、図1に対応する断面構成を示している。なお、有機TFTの各構成要素の形成材料については既に詳細に説明したので、以下では、その形成材料の一例を挙げることとする。
この薄膜トランジスタである有機TFTおよびその製造方法では、有機半導体層4とソース電極7およびドレイン電極8とが重なる領域において、それらの間に有機導電層5,6が挿入されている。この有機半導体層4は、エッチングガスと反応可能な金属元素および半金属元素のうちの少なくとも一方を含む金属含有材料により形成されている。これに対して、有機導電層5,6は、エッチングガスと反応可能な金属元素および半金属元素のうちの少なくとも一方を含まない非金属含有材料により形成されている。よって、以下の理由により、ソース電極7およびドレイン電極8と有機半導体層4とにおける電荷注入効率の向上と有機TFTの性能の確保とを両立させることができる。
図1では、有機TFTが有機導電層5,6に隣接すると共に金属含有材料により形成された有機半導体層4だけを備えているが、例えば、ゲート絶縁層3と有機半導体層4との間に1層または2層の以上の追加有機半導体層を備えていてもよい。
次に、上記した薄膜トランジスタである有機TFTの適用例について説明する。この有機TFTは、例えば、以下で説明するように、いくつかの電子機器に適用可能である。
有機TFTは、例えば、液晶表示装置に適用される。図7および図8は、それぞれ液晶表示装置の断面構成および回路構成を表している。なお、以下で説明する装置構成(図7)および回路構成(図8)はあくまで一例であるため、それらの構成は適宜変更可能である。
有機TFTは、例えば、有機EL表示装置に適用される。図9および図10は、それぞれ有機EL表示装置の断面構成および回路構成を表している。なお、以下で説明する装置構成(図9)および回路構成(図10)はあくまで一例であるため、それらの構成は適宜変更可能である。
有機TFTは、例えば、電子ペーパー表示装置に適用される。図11は、電子ペーパー表示装置の断面構成を表している。なお、以下で説明する装置構成(図11)および図8を参照して説明する回路構成はあくまで一例であるため、それらの構成は適宜変更可能である。
Claims (5)
- 酸素(O 2 )を含むエッチングガスと反応可能であるケイ素(Si)を構成元素として含む材料により形成された有機半導体層と、
互いに離間されたソース電極およびドレイン電極と、
前記有機半導体層と前記ソース電極およびドレイン電極とが重なる領域において前記有機半導体層と前記ソース電極およびドレイン電極との間に挿入され、前記酸素を含むエッチングガスと反応可能であるケイ素を構成元素として含まない材料により形成された有機導電層とを備えた、
薄膜トランジスタ。 - 前記ケイ素を構成元素として含む材料は、シリルアルキル基を有する有機半導体材料であり、
前記ケイ素を構成元素として含まない材料は、シリルアルキル基を有しない有機導電性材料またはシリルアルキル基を有しない有機半導体材料である、
請求項1記載の薄膜トランジスタ。 - 前記有機導電層は、前記ソース電極およびドレイン電極と前記有機半導体層との電荷注入効率を向上させるためのホール注入層である、
請求項1または請求項2に記載の薄膜トランジスタ。 - 酸素を含むエッチングガスと反応可能であるケイ素を構成元素として含む材料を用いて、有機半導体層を形成し、
前記有機半導体層の上に、前記酸素を含むエッチングガスと反応可能であるケイ素を構成元素として含まない材料を用いて、有機導電層を形成し、
前記有機導電層の上に、互いに離間されたソース電極およびドレイン電極を形成し、
前記酸素を含むエッチングガスを用いて、前記ソース電極およびドレイン電極をマスクとして前記有機導電層をエッチングする、
薄膜トランジスタの製造方法。 - 薄膜トランジスタを備え、
前記薄膜トランジスタは、
酸素を含むエッチングガスと反応可能であるケイ素を構成元素として含む材料により形成された有機半導体層と、
互いに離間されたソース電極およびドレイン電極と、
前記有機半導体層と前記ソース電極およびドレイン電極とが重なる領域において前記有機半導体層と前記ソース電極およびドレイン電極との間に挿入され、前記酸素を含むエッチングガスと反応可能であるケイ素を構成元素として含まない材料により形成された有機導電層とを備えた、
電子機器。
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JP2010171165A (ja) * | 2009-01-22 | 2010-08-05 | Sony Corp | 有機半導体装置およびその製造方法 |
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WO2011065465A1 (ja) * | 2009-11-26 | 2011-06-03 | 独立行政法人物質・材料研究機構 | 有機半導体デバイスのコンタクト構造の作製方法及び有機半導体デバイスのコンタクト構造 |
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CN102832345B (zh) | 2017-11-21 |
US9368738B2 (en) | 2016-06-14 |
US20120313150A1 (en) | 2012-12-13 |
JP2013004564A (ja) | 2013-01-07 |
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