CN1726431A - 纳米级设计结构、其制造方法及设备以及在掩模修复、增强和制造上的应用 - Google Patents
纳米级设计结构、其制造方法及设备以及在掩模修复、增强和制造上的应用 Download PDFInfo
- Publication number
- CN1726431A CN1726431A CNA200380105744XA CN200380105744A CN1726431A CN 1726431 A CN1726431 A CN 1726431A CN A200380105744X A CNA200380105744X A CN A200380105744XA CN 200380105744 A CN200380105744 A CN 200380105744A CN 1726431 A CN1726431 A CN 1726431A
- Authority
- CN
- China
- Prior art keywords
- mask
- tip
- substrate
- defective
- deposit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/161—Process or apparatus coating on selected surface areas by direct patterning from plating step, e.g. inkjet
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1658—Process features with two steps starting with metal deposition followed by addition of reducing agent
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
- Y10S977/857—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
- Y10S977/86—Scanning probe structure
- Y10S977/863—Atomic force probe
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Thermal Sciences (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Ceramic Engineering (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41978102P | 2002-10-21 | 2002-10-21 | |
| US60/419,781 | 2002-10-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1726431A true CN1726431A (zh) | 2006-01-25 |
Family
ID=32176479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200380105744XA Pending CN1726431A (zh) | 2002-10-21 | 2003-10-21 | 纳米级设计结构、其制造方法及设备以及在掩模修复、增强和制造上的应用 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7691541B2 (enExample) |
| EP (1) | EP1556737B1 (enExample) |
| JP (1) | JP2006504136A (enExample) |
| KR (1) | KR101101698B1 (enExample) |
| CN (1) | CN1726431A (enExample) |
| AT (1) | ATE419558T1 (enExample) |
| AU (1) | AU2003290531A1 (enExample) |
| DE (1) | DE60325629D1 (enExample) |
| WO (1) | WO2004038504A2 (enExample) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101638219A (zh) * | 2008-07-31 | 2010-02-03 | 首尔大学校产学协力团 | 纳米图形化中凸起效应的去除 |
| CN101344717B (zh) * | 2008-08-15 | 2011-05-18 | 深圳市路维电子有限公司 | 光罩修补液 |
| CN101726633B (zh) * | 2008-10-16 | 2011-12-07 | 京元电子股份有限公司 | 具修补层的测试载板 |
| CN101925977B (zh) * | 2008-01-30 | 2013-02-27 | 韩国标准科学研究院 | 修复光掩模的装置及方法 |
| CN101738514B (zh) * | 2008-11-11 | 2013-03-20 | 京元电子股份有限公司 | 具有修补层金属垫的测试载板制造方法 |
| CN107015029A (zh) * | 2017-05-11 | 2017-08-04 | 四川理工学院 | 原子力显微镜接触模式表征用碳素材料样本的制做方法 |
| CN109478558A (zh) * | 2016-03-22 | 2019-03-15 | Xtpl股份有限公司 | 用于在基板上形成线结构的自下而上法 |
| CN110627376A (zh) * | 2019-09-24 | 2019-12-31 | 上海电机学院 | 一种纳米SiO2超疏水涂层及制备工艺和用途 |
| CN111063610A (zh) * | 2019-12-30 | 2020-04-24 | 上海集成电路研发中心有限公司 | 光刻缺陷修复方法 |
| CN111480105A (zh) * | 2017-11-24 | 2020-07-31 | 浜松光子学株式会社 | 晶圆的检查方法及晶圆 |
| CN114014262A (zh) * | 2021-10-13 | 2022-02-08 | 电子科技大学 | 一种石墨烯量子点阵列的微纳复合制备方法 |
| TWI816149B (zh) * | 2020-06-30 | 2023-09-21 | 德商卡爾蔡司Smt有限公司 | 用於設定微影光罩之至少一圖案元素之至少一側壁角度的方法及設備、用於使用至少一具質量粒子束檢驗微影光罩之至少一缺陷的方法及設備、以及包含指令之電腦程式 |
| CN120033092A (zh) * | 2025-01-21 | 2025-05-23 | 广东工业大学 | 一种打印纳米铜辅助混合键合工艺的方法 |
Families Citing this family (125)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6339217B1 (en) | 1995-07-28 | 2002-01-15 | General Nanotechnology Llc | Scanning probe microscope assembly and method for making spectrophotometric, near-field, and scanning probe measurements |
| US6337479B1 (en) * | 1994-07-28 | 2002-01-08 | Victor B. Kley | Object inspection and/or modification system and method |
| US5751683A (en) | 1995-07-24 | 1998-05-12 | General Nanotechnology, L.L.C. | Nanometer scale data storage device and associated positioning system |
| US8071168B2 (en) * | 2002-08-26 | 2011-12-06 | Nanoink, Inc. | Micrometric direct-write methods for patterning conductive material and applications to flat panel display repair |
| US7491422B2 (en) * | 2002-10-21 | 2009-02-17 | Nanoink, Inc. | Direct-write nanolithography method of transporting ink with an elastomeric polymer coated nanoscopic tip to form a structure having internal hollows on a substrate |
| US7217396B2 (en) * | 2003-05-05 | 2007-05-15 | The Board Of Trustees Of The University Of Illinois | Microfabricated micro fluid channels |
| US20040228962A1 (en) * | 2003-05-16 | 2004-11-18 | Chang Liu | Scanning probe microscopy probe and method for scanning probe contact printing |
| US7153615B2 (en) * | 2003-08-20 | 2006-12-26 | Intel Corporation | Extreme ultraviolet pellicle using a thin film and supportive mesh |
| TWI261726B (en) * | 2004-04-09 | 2006-09-11 | Allied Integrated Patterning C | Acceptable defect positioning and manufacturing method for large-scaled photomask blanks |
| US8235302B2 (en) * | 2004-04-20 | 2012-08-07 | Nanolnk, Inc. | Identification features |
| JP4652725B2 (ja) * | 2004-06-09 | 2011-03-16 | エスアイアイ・ナノテクノロジー株式会社 | フォトマスク欠陥修正方法 |
| US7034290B2 (en) * | 2004-09-24 | 2006-04-25 | Agilent Technologies, Inc. | Target support with pattern recognition sites |
| US8261662B1 (en) | 2004-11-08 | 2012-09-11 | Nanolnk, Inc. | Active pen nanolithography |
| US7171841B2 (en) * | 2004-12-01 | 2007-02-06 | Uchicago Argonne, Llc | Ultrafast and ultrasensitive hydrogen sensors based on self-assembly monolayer promoted 2-dimensional palladium nanoclusters |
| CN1300635C (zh) * | 2004-12-09 | 2007-02-14 | 上海交通大学 | 真空负压纳米压印方法 |
| US20100294147A1 (en) * | 2004-12-20 | 2010-11-25 | Nanoink, Inc. | Apparatus and methods for preparing identification features including pharmaceutical applications |
| US20100297027A1 (en) * | 2004-12-20 | 2010-11-25 | Nanolnk, Inc. | Overt authentication features for compositions and objects and methods of fabrication and verification thereof |
| US20060138079A1 (en) * | 2004-12-27 | 2006-06-29 | Potyrailo Radislav A | Fabrication process of microfluidic devices |
| EP3228624A3 (en) * | 2005-02-10 | 2017-11-01 | Yeda Research And Development Co., Ltd. | Redox-active chromophore molecules and devices utilizing the same |
| US8461628B2 (en) * | 2005-03-18 | 2013-06-11 | Kovio, Inc. | MOS transistor with laser-patterned metal gate, and method for making the same |
| WO2006127736A2 (en) * | 2005-05-23 | 2006-11-30 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon | Silicon substrates with thermal oxide windows for transmission electron microscopy |
| US8212225B2 (en) * | 2005-05-13 | 2012-07-03 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon | TEM grids for determination of structure-property relationships in nanotechnology |
| US7833904B2 (en) * | 2005-06-16 | 2010-11-16 | The Trustees Of Columbia University In The City Of New York | Methods for fabricating nanoscale electrodes and uses thereof |
| WO2007008507A2 (en) * | 2005-07-06 | 2007-01-18 | Mirkin Chad A | Phase separation in patterned structures |
| US8557351B2 (en) * | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
| US7759407B2 (en) | 2005-07-22 | 2010-07-20 | Molecular Imprints, Inc. | Composition for adhering materials together |
| US8846195B2 (en) | 2005-07-22 | 2014-09-30 | Canon Nanotechnologies, Inc. | Ultra-thin polymeric adhesion layer |
| US8808808B2 (en) * | 2005-07-22 | 2014-08-19 | Molecular Imprints, Inc. | Method for imprint lithography utilizing an adhesion primer layer |
| JP4607705B2 (ja) * | 2005-08-24 | 2011-01-05 | 株式会社東芝 | マスク欠陥修正方法及び半導体装置の製造方法 |
| US20100294927A1 (en) * | 2005-09-12 | 2010-11-25 | Nanolnk, Inc. | High throughput inspecting |
| US7281419B2 (en) * | 2005-09-21 | 2007-10-16 | The Board Of Trustees Of The University Of Illinois | Multifunctional probe array system |
| US7473912B2 (en) * | 2005-11-09 | 2009-01-06 | Yang Xiao Charles | Method and apparatus for patterning micro and nano structures using a mask-less process |
| US20070172745A1 (en) * | 2006-01-26 | 2007-07-26 | Smith Bruce W | Evanescent wave assist features for microlithography |
| US8192794B2 (en) * | 2006-04-19 | 2012-06-05 | Northwestern University | Massively parallel lithography with two-dimensional pen arrays |
| EP2013662B1 (en) | 2006-04-19 | 2013-08-14 | Northwestern University | Article for parallel lithography with two-dimensional pen arrays |
| KR100866499B1 (ko) * | 2006-05-18 | 2008-11-03 | 주식회사 파이컴 | 폴리머 마스크의 수리 방법 |
| WO2008091279A2 (en) | 2006-06-28 | 2008-07-31 | Northwestern University | Etching and hole arrays |
| US8278216B1 (en) | 2006-08-18 | 2012-10-02 | Novellus Systems, Inc. | Selective capping of copper |
| JP5003094B2 (ja) * | 2006-10-20 | 2012-08-15 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスクの製造方法 |
| DE102007055540A1 (de) * | 2006-11-29 | 2008-06-19 | Sii Nano Technology Inc. | Verfahren zum Korrigieren von Photomaskendefekten |
| WO2008140504A2 (en) | 2006-12-15 | 2008-11-20 | Los Alamos National Security, Llc | Preparation of array of long carbon nanotubes and fibers therefrom |
| ES2391665T3 (es) * | 2006-12-18 | 2012-11-28 | Northwestern University | Fabricación de microestructuras y nanoestructuras utilizando resistencia al grabado |
| US7767985B2 (en) * | 2006-12-26 | 2010-08-03 | Globalfoundries Inc. | EUV pellicle and method for fabricating semiconductor dies using same |
| US8075697B2 (en) * | 2007-02-08 | 2011-12-13 | Fontana Technology | Particle removal method and composition |
| US7680553B2 (en) | 2007-03-08 | 2010-03-16 | Smp Logic Systems Llc | Methods of interfacing nanomaterials for the monitoring and execution of pharmaceutical manufacturing processes |
| CA2678943A1 (en) * | 2007-03-13 | 2008-09-18 | Nanoink, Inc. | Nanolithography with use of viewports |
| US20080264441A1 (en) * | 2007-04-30 | 2008-10-30 | Yoji Takagi | Method for removing residuals from photomask |
| EP2156246A1 (en) * | 2007-05-09 | 2010-02-24 | Nanoink, Inc. | Compact nanofabrication apparatus |
| US10231344B2 (en) | 2007-05-18 | 2019-03-12 | Applied Nanotech Holdings, Inc. | Metallic ink |
| US8404160B2 (en) | 2007-05-18 | 2013-03-26 | Applied Nanotech Holdings, Inc. | Metallic ink |
| AU2008299822A1 (en) * | 2007-06-20 | 2009-03-19 | Northwestern University | Universal matrix |
| US20090004231A1 (en) | 2007-06-30 | 2009-01-01 | Popp Shane M | Pharmaceutical dosage forms fabricated with nanomaterials for quality monitoring |
| US8039379B1 (en) * | 2007-07-02 | 2011-10-18 | Novellus Systems, Inc. | Nanoparticle cap layer |
| US7994640B1 (en) | 2007-07-02 | 2011-08-09 | Novellus Systems, Inc. | Nanoparticle cap layer |
| US7954166B2 (en) * | 2007-08-08 | 2011-05-31 | Northwestern University | Independently-addressable, self-correcting inking for cantilever arrays |
| US20090061161A1 (en) * | 2007-08-27 | 2009-03-05 | Lynn Sheehan | Laser patterning of a cross-linked polymer |
| US8540922B2 (en) * | 2007-08-27 | 2013-09-24 | Hewlett-Packard Development Company, L.P. | Laser patterning of a carbon nanotube layer |
| US20090061184A1 (en) * | 2007-08-31 | 2009-03-05 | United Technologies Corporation | Processes for Applying a Conversion Coating with Conductive Additive(S) and the Resultant Coated Articles |
| JP2011502183A (ja) * | 2007-10-15 | 2011-01-20 | ナノインク インコーポレーティッド | ナノ粒子ベースインクのリソグラフィ |
| US8205268B2 (en) * | 2007-11-26 | 2012-06-19 | Nanoink, Inc. | Cantilever with pivoting actuation |
| WO2009099619A2 (en) * | 2008-02-05 | 2009-08-13 | Nanoink, Inc. | Array and cantilever array leveling |
| US8506849B2 (en) | 2008-03-05 | 2013-08-13 | Applied Nanotech Holdings, Inc. | Additives and modifiers for solvent- and water-based metallic conductive inks |
| US8068328B2 (en) * | 2008-03-12 | 2011-11-29 | Intel Corporation | Nanolithographic method of manufacturing an embedded passive device for a microelectronic application, and microelectronic device containing same |
| WO2009140441A2 (en) * | 2008-05-13 | 2009-11-19 | Nanoink, Inc. | Height sensing cantilever |
| US9730333B2 (en) | 2008-05-15 | 2017-08-08 | Applied Nanotech Holdings, Inc. | Photo-curing process for metallic inks |
| US9104948B2 (en) | 2008-09-16 | 2015-08-11 | Ramot At Tel-Aviv University Ltd. | System and a method for nano imprinting |
| WO2010032243A1 (en) * | 2008-09-16 | 2010-03-25 | Ramot At Tel Aviv University Ltd. | A system and a method for nano imprinting |
| KR101053450B1 (ko) * | 2008-09-26 | 2011-08-03 | 참엔지니어링(주) | 마스크 리페어 장치 및 방법 |
| US8361546B2 (en) * | 2008-10-30 | 2013-01-29 | Molecular Imprints, Inc. | Facilitating adhesion between substrate and patterned layer |
| JP5168100B2 (ja) * | 2008-11-17 | 2013-03-21 | 大日本印刷株式会社 | フォトマスク等の欠陥修正方法 |
| JP5740389B2 (ja) | 2009-03-27 | 2015-06-24 | アプライド・ナノテック・ホールディングス・インコーポレーテッド | 光焼結及び/またはレーザー焼結を強化するためのバッファ層 |
| US20100288543A1 (en) * | 2009-04-14 | 2010-11-18 | Nanoink, Inc. | Conducting lines, nanoparticles, inks, and patterning |
| KR101129025B1 (ko) * | 2009-06-25 | 2012-03-23 | 주식회사 하이닉스반도체 | 위상반전마스크의 위상차 에러 보정방법 |
| WO2011002806A1 (en) | 2009-06-30 | 2011-01-06 | Nanoink, Inc. | Advanced photomask repair |
| US8422197B2 (en) | 2009-07-15 | 2013-04-16 | Applied Nanotech Holdings, Inc. | Applying optical energy to nanoparticles to produce a specified nanostructure |
| GB0915251D0 (en) * | 2009-09-02 | 2009-10-07 | Univ Bangor | Low temperature platinisation for dye-sensitised solar cells |
| US20110165412A1 (en) * | 2009-11-24 | 2011-07-07 | Molecular Imprints, Inc. | Adhesion layers in nanoimprint lithograhy |
| US20110203656A1 (en) * | 2010-02-24 | 2011-08-25 | Iowa State University Research Foundation, Inc. | Nanoscale High-Aspect-Ratio Metallic Structure and Method of Manufacturing Same |
| EP2564270A1 (en) * | 2010-04-27 | 2013-03-06 | Nanoink, Inc. | Force curve analysis method for planar object leveling |
| US20120154773A1 (en) * | 2010-12-17 | 2012-06-21 | Carl Zeiss Sms Gmbh | Method and apparatus for correcting errors on a wafer processed by a photolithographic mask |
| US8630479B2 (en) * | 2011-01-07 | 2014-01-14 | Kla-Tencor Corporation | Methods and systems for improved localized feature quantification in surface metrology tools |
| DE102011004214A1 (de) | 2011-02-16 | 2012-08-16 | Carl Zeiss Sms Gmbh | Vorrichtung und Verfahren zum Analysieren und Verändern einer Probenoberfläche |
| US8458810B2 (en) * | 2011-04-07 | 2013-06-04 | Michael E. MCCONNEY | Scanning thermal twisting atomic force microscopy |
| RO128117B1 (ro) * | 2011-06-16 | 2019-04-30 | Institutul Naţional De Cercetare-Dezvoltare Pentru Microtehnologie | Procedeu de nanolitografie 2d şi 3d de tip fountain pen asistat optic |
| TWI438436B (zh) * | 2011-07-12 | 2014-05-21 | Univ Nat Cheng Kung | 熱探針 |
| WO2013059670A2 (en) | 2011-10-21 | 2013-04-25 | Nanoink, Inc. | Octahedral and pyramid-on-post tips for microscopy and lithography |
| CN102736405B (zh) * | 2012-06-15 | 2014-07-16 | 深圳市华星光电技术有限公司 | 一种光罩及其修正方法 |
| TW201419315A (zh) | 2012-07-09 | 2014-05-16 | Applied Nanotech Holdings Inc | 微米尺寸銅粒子的光燒結法 |
| WO2014009952A2 (en) | 2012-07-09 | 2014-01-16 | Yeda Research And Development Co. Ltd | Logic circuits with plug and play solid-state molecular chips |
| US8748063B2 (en) | 2012-08-01 | 2014-06-10 | International Business Machines Corporation | Extreme ultraviolet (EUV) multilayer defect compensation and EUV masks |
| US9690191B2 (en) | 2013-02-17 | 2017-06-27 | Carl Zeiss Sms Ltd. | Surface defect repair by irradiation |
| US9494854B2 (en) * | 2013-03-14 | 2016-11-15 | Kla-Tencor Corporation | Technique for repairing an EUV photo-mask |
| US9038269B2 (en) * | 2013-04-02 | 2015-05-26 | Xerox Corporation | Printhead with nanotips for nanoscale printing and manufacturing |
| US9672316B2 (en) | 2013-07-17 | 2017-06-06 | Arm Limited | Integrated circuit manufacture using direct write lithography |
| US9086639B2 (en) | 2013-09-12 | 2015-07-21 | International Business Machines Corporation | Fabrication of on-product aberration monitors with nanomachining |
| IL229525A0 (en) | 2013-11-20 | 2014-01-30 | Yeda Res & Dev | Metal complexes of tris-bipyridyl and their uses in electrochromic applications |
| TWI639179B (zh) * | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| WO2015133090A1 (ja) * | 2014-03-07 | 2015-09-11 | 株式会社Joled | バンクの補修方法、有機el表示装置およびその製造方法 |
| US9899234B2 (en) | 2014-06-30 | 2018-02-20 | Lam Research Corporation | Liner and barrier applications for subtractive metal integration |
| US10252463B2 (en) * | 2014-07-22 | 2019-04-09 | Nabil A. Amro | Compact instrument with exchangeable modules for multiple microfabrication and/or nanofabrication methods |
| KR102352740B1 (ko) * | 2015-04-30 | 2022-01-18 | 삼성디스플레이 주식회사 | 마스크의 제조 방법 및 표시 장치의 제조 방법 |
| CN105182684A (zh) * | 2015-10-20 | 2015-12-23 | 京东方科技集团股份有限公司 | 一种掩模板的检修方法 |
| US9996004B2 (en) | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US10751933B2 (en) | 2015-12-16 | 2020-08-25 | The Regents Of The University Of California | Technique for three-dimensional nanoprinting |
| RU2702960C2 (ru) * | 2016-03-24 | 2019-10-14 | Федеральное государственное бюджетное учреждение науки Институт систем обработки изображений Российской академии наук (ИСОИ РАН) | Способ изготовления фазовых дифракционных решеток, микроструктур и контактных масок |
| DE102016205941B4 (de) | 2016-04-08 | 2020-11-05 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Analysieren eines Defekts einer fotolithographischen Maske oder eines Wafers |
| RU2659103C1 (ru) * | 2017-04-07 | 2018-06-28 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Владимирский Государственный Университет имени Александра Григорьевича и Николая Григорьевича Столетовых" (ВлГУ) | Способ формирования планарных структур методом атомно-силовой литографии |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US10510937B2 (en) | 2017-11-22 | 2019-12-17 | X-Celeprint Limited | Interconnection by lateral transfer printing |
| JP7474696B2 (ja) * | 2018-01-04 | 2024-04-25 | マジック リープ, インコーポレイテッド | 無機材料を組み込むポリマー構造に基づく光学要素 |
| US10679110B2 (en) | 2018-04-01 | 2020-06-09 | Ramot At Tel-Aviv University Ltd. | Nanotags for authentication |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| JP7361622B2 (ja) * | 2019-03-05 | 2023-10-16 | Hoya株式会社 | フォトマスクの修正方法、フォトマスクの修正装置、ペリクル付きフォトマスクの製造方法および表示装置の製造方法 |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US11459232B2 (en) * | 2019-04-08 | 2022-10-04 | Donna C. Mauro | Additive manufacturing methods for modification and improvement of the surfaces of micro-scale geometric features |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR20250007037A (ko) | 2020-01-15 | 2025-01-13 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
| WO2021173557A1 (en) | 2020-02-28 | 2021-09-02 | Lam Research Corporation | Multi-layer hardmask for defect reduction in euv patterning |
| TWI876020B (zh) | 2020-04-03 | 2025-03-11 | 美商蘭姆研究公司 | 處理光阻的方法、以及用於沉積薄膜的設備 |
| CN116626993A (zh) | 2020-07-07 | 2023-08-22 | 朗姆研究公司 | 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺 |
| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| US12416589B2 (en) | 2022-06-24 | 2025-09-16 | SanDisk Technologies, Inc. | Systems and methods for non-destructive inspection of semiconductor devices using reflective X-ray microscope tomographic imaging |
| KR102861030B1 (ko) * | 2022-12-08 | 2025-09-16 | 한국외국어대학교 연구산학협력단 | 제품의 표면에 미세 패턴을 형성하는 방법 및 이를 적용하여 형성한 미세 패턴을 포함하는 제품 |
Family Cites Families (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4160049A (en) | 1977-11-07 | 1979-07-03 | Harold Narcus | Bright electroless plating process producing two-layer nickel coatings on dielectric substrates |
| US4200668A (en) | 1978-09-05 | 1980-04-29 | Western Electric Company, Inc. | Method of repairing a defective photomask |
| EP0165685B1 (en) | 1984-06-20 | 1992-09-23 | Gould Inc. | Laser-based system for the total repair of photomasks |
| US4968390A (en) * | 1988-11-03 | 1990-11-06 | Board Of Regents, The University Of Texas System | High resolution deposition and etching in polymer films |
| US5126574A (en) | 1989-10-10 | 1992-06-30 | The United States Of America As Represented By The Secretary Of Commerce | Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication |
| US5015323A (en) | 1989-10-10 | 1991-05-14 | The United States Of America As Represented By The Secretary Of Commerce | Multi-tipped field-emission tool for nanostructure fabrication |
| US5104684A (en) | 1990-05-25 | 1992-04-14 | Massachusetts Institute Of Technology | Ion beam induced deposition of metals |
| US5879860A (en) | 1993-12-08 | 1999-03-09 | Leica Microsystems Lithography Limited | Method of writing a pattern by an electron beam |
| US6000947A (en) | 1994-04-12 | 1999-12-14 | The Board Of Trustees Of The Leland Stanford, Jr. | Method of fabricating transistor or other electronic device using scanning probe microscope |
| AU3152795A (en) | 1994-07-28 | 1996-02-22 | Victor B. Kley | Scanning probe microscope assembly |
| US5756997A (en) | 1996-03-04 | 1998-05-26 | General Nanotechnology, L.L.C. | Scanning probe/optical microscope with modular objective/probe and drive/detector units |
| US6337479B1 (en) * | 1994-07-28 | 2002-01-08 | Victor B. Kley | Object inspection and/or modification system and method |
| US5751683A (en) | 1995-07-24 | 1998-05-12 | General Nanotechnology, L.L.C. | Nanometer scale data storage device and associated positioning system |
| US6353219B1 (en) | 1994-07-28 | 2002-03-05 | Victor B. Kley | Object inspection and/or modification system and method |
| US5441386A (en) | 1994-07-29 | 1995-08-15 | Hsieh; Hsin M. | Lubricating system for cooling fans |
| US5674409A (en) | 1995-03-16 | 1997-10-07 | International Business Machines Corporation | Nanolithographic method of forming fine lines |
| DE19630705A1 (de) | 1995-08-30 | 1997-03-20 | Deutsche Telekom Ag | Verfahren zur Herstellung von 3-dimensional strukturierten Polymerschichten für die integrierte Optik |
| US5772905A (en) | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
| US6309580B1 (en) | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
| US5747120A (en) | 1996-03-29 | 1998-05-05 | Regents Of The University Of California | Laser ablated hard coating for microtools |
| KR100189741B1 (ko) * | 1996-07-19 | 1999-06-01 | 구본준 | 위상반전마스크 및 그의 제조방법 |
| CA2276100A1 (en) * | 1996-12-30 | 1998-07-09 | D-Star Technologies, Inc. | Near-ultraviolet formation of refractive-index grating using phase mask |
| US6165649A (en) | 1997-01-21 | 2000-12-26 | International Business Machines Corporation | Methods for repair of photomasks |
| EP1012584A4 (en) | 1997-01-21 | 2006-10-04 | Rave L L C | SYSTEM AND METHOD FOR MONITORING AND / OR MODIFYING OBJECTS |
| US6396966B1 (en) | 1997-02-09 | 2002-05-28 | Nanoptics, Inc. | Glass structures for nanodelivery and nanosensing |
| US5854487A (en) | 1997-02-28 | 1998-12-29 | Park Scientific Instruments | Scanning probe microscope providing unobstructed top down and bottom up views |
| JPH10282130A (ja) | 1997-04-01 | 1998-10-23 | Canon Inc | プローブとそれを用いた走査型プローブ顕微鏡 |
| US5948470A (en) | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
| US5865978A (en) * | 1997-05-09 | 1999-02-02 | Cohen; Adam E. | Near-field photolithographic masks and photolithography; nanoscale patterning techniques; apparatus and method therefor |
| US5798193A (en) | 1997-05-16 | 1998-08-25 | Micron Technology, Inc. | Method and apparatus to accurately correlate defect coordinates between photomask inspection and repair systems |
| US6292382B1 (en) | 1997-06-01 | 2001-09-18 | Nanoptics, Inc. | Nanometric writing and erasure combined with supersensitive reading without erasure |
| US5980998A (en) | 1997-09-16 | 1999-11-09 | Sri International | Deposition of substances on a surface |
| US6005247A (en) | 1997-10-01 | 1999-12-21 | Intevac, Inc. | Electron beam microscope using electron beam patterns |
| DE59913814D1 (de) | 1998-01-30 | 2006-10-12 | Nawotec Gmbh | Vielsondentestkopf und prüfverfahren |
| KR100269329B1 (ko) | 1998-06-29 | 2000-12-01 | 윤종용 | 포토마스크의 결함 수리 방법 |
| US6271130B1 (en) | 1998-11-25 | 2001-08-07 | The University Of Chicago | Semiconductor assisted metal deposition for nanolithography applications |
| US6146227A (en) * | 1998-09-28 | 2000-11-14 | Xidex Corporation | Method for manufacturing carbon nanotubes as functional elements of MEMS devices |
| US6600856B1 (en) | 1998-12-06 | 2003-07-29 | Nanoptics, Ltd. | Lensed optical fibers and unique micropipettes with subwavelength apertures |
| US6114073A (en) | 1998-12-28 | 2000-09-05 | Micron Technology, Inc. | Method for repairing phase shifting masks |
| US6096459A (en) | 1998-12-28 | 2000-08-01 | Micron Technology, Inc. | Method for repairing alternating phase shifting masks |
| US6635311B1 (en) | 1999-01-07 | 2003-10-21 | Northwestern University | Methods utilizing scanning probe microscope tips and products therefor or products thereby |
| US6827979B2 (en) * | 1999-01-07 | 2004-12-07 | Northwestern University | Methods utilizing scanning probe microscope tips and products therefor or produced thereby |
| US20020122873A1 (en) | 2000-01-05 | 2002-09-05 | Mirkin Chad A. | Nanolithography methods and products therefor and produced thereby |
| US6197455B1 (en) | 1999-01-14 | 2001-03-06 | Advanced Micro Devices, Inc. | Lithographic mask repair using a scanning tunneling microscope |
| US6270946B1 (en) | 1999-03-18 | 2001-08-07 | Luna Innovations, Inc. | Non-lithographic process for producing nanoscale features on a substrate |
| US6452171B1 (en) | 1999-07-23 | 2002-09-17 | Piezomax Technologies, Inc. | Method for sharpening nanotube bundles |
| US6253015B1 (en) * | 2000-02-08 | 2001-06-26 | Corning Incorporated | Planar waveguides with high refractive index |
| KR100455279B1 (ko) | 2000-05-06 | 2004-11-06 | 삼성전자주식회사 | Set 소자 제작 방법 |
| US6322938B1 (en) | 2000-05-22 | 2001-11-27 | The United States Of America As Represented By The Secretary Of The Air Force | Nanolithography for multi-passband grating filters |
| US6455175B1 (en) | 2000-07-06 | 2002-09-24 | Honeywell International Inc. | Electroless rhodium plating |
| JP2002040627A (ja) | 2000-07-24 | 2002-02-06 | Nec Corp | レーザパターン修正方法並びに修正装置 |
| US7887885B2 (en) * | 2000-10-20 | 2011-02-15 | Northwestern University | Nanolithography methods and products therefor and produced thereby |
| JP3914386B2 (ja) * | 2000-12-28 | 2007-05-16 | 株式会社ルネサステクノロジ | フォトマスク、その製造方法、パターン形成方法および半導体装置の製造方法 |
| US6451375B1 (en) | 2001-01-05 | 2002-09-17 | International Business Machines Corporation | Process for depositing a film on a nanometer structure |
| JP4149676B2 (ja) | 2001-02-05 | 2008-09-10 | 株式会社東芝 | フォトマスクの修正方法 |
| US6573592B2 (en) | 2001-08-21 | 2003-06-03 | Micron Technology, Inc. | Semiconductor die packages with standard ball grid array footprint and method for assembling the same |
| IL145136A0 (en) | 2001-08-27 | 2002-06-30 | Multiple plate tip or sample scanning reconfigurable scanning probe microscope with transparent interfacing of far-field optical microscopes | |
| IL145191A0 (en) | 2001-08-30 | 2002-06-30 | Aaron Lewis | Optically amplifying near-field optical signals |
| US6740474B2 (en) | 2001-11-06 | 2004-05-25 | Eastman Kodak Company | Technique for making deep microstructures in photoresist |
| TWI287170B (en) * | 2001-12-17 | 2007-09-21 | Univ Northwestern | Patterning of solid state features by direct write nanolithographic printing |
| US7994450B2 (en) | 2002-01-07 | 2011-08-09 | International Business Machines Corporation | Debris minimization and improved spatial resolution in pulsed laser ablation of materials |
| US7998528B2 (en) | 2002-02-14 | 2011-08-16 | Massachusetts Institute Of Technology | Method for direct fabrication of nanostructures |
| US7098056B2 (en) | 2002-08-09 | 2006-08-29 | Nanoink, Inc. | Apparatus, materials, and methods for fabrication and catalysis |
| US7005378B2 (en) | 2002-08-26 | 2006-02-28 | Nanoink, Inc. | Processes for fabricating conductive patterns using nanolithography as a patterning tool |
| US8071168B2 (en) | 2002-08-26 | 2011-12-06 | Nanoink, Inc. | Micrometric direct-write methods for patterning conductive material and applications to flat panel display repair |
| WO2004027791A1 (en) * | 2002-09-17 | 2004-04-01 | Northwestern University | Patterning magnetic nanostructures |
| US7491422B2 (en) * | 2002-10-21 | 2009-02-17 | Nanoink, Inc. | Direct-write nanolithography method of transporting ink with an elastomeric polymer coated nanoscopic tip to form a structure having internal hollows on a substrate |
-
2003
- 2003-10-21 KR KR1020057006817A patent/KR101101698B1/ko not_active Expired - Fee Related
- 2003-10-21 AT AT03783067T patent/ATE419558T1/de not_active IP Right Cessation
- 2003-10-21 US US10/689,547 patent/US7691541B2/en not_active Expired - Fee Related
- 2003-10-21 WO PCT/US2003/033148 patent/WO2004038504A2/en not_active Ceased
- 2003-10-21 DE DE60325629T patent/DE60325629D1/de not_active Expired - Fee Related
- 2003-10-21 AU AU2003290531A patent/AU2003290531A1/en not_active Abandoned
- 2003-10-21 JP JP2004546910A patent/JP2006504136A/ja active Pending
- 2003-10-21 CN CNA200380105744XA patent/CN1726431A/zh active Pending
- 2003-10-21 EP EP03783067A patent/EP1556737B1/en not_active Expired - Lifetime
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101925977B (zh) * | 2008-01-30 | 2013-02-27 | 韩国标准科学研究院 | 修复光掩模的装置及方法 |
| CN101638219B (zh) * | 2008-07-31 | 2013-01-09 | 首尔大学校产学协力团 | 纳米图形化中凸起效应的去除方法 |
| CN101638219A (zh) * | 2008-07-31 | 2010-02-03 | 首尔大学校产学协力团 | 纳米图形化中凸起效应的去除 |
| CN101344717B (zh) * | 2008-08-15 | 2011-05-18 | 深圳市路维电子有限公司 | 光罩修补液 |
| CN101726633B (zh) * | 2008-10-16 | 2011-12-07 | 京元电子股份有限公司 | 具修补层的测试载板 |
| CN101738514B (zh) * | 2008-11-11 | 2013-03-20 | 京元电子股份有限公司 | 具有修补层金属垫的测试载板制造方法 |
| CN109478558B (zh) * | 2016-03-22 | 2020-05-05 | Xtpl股份有限公司 | 用于在基板上形成结构的方法和设备 |
| CN109478558A (zh) * | 2016-03-22 | 2019-03-15 | Xtpl股份有限公司 | 用于在基板上形成线结构的自下而上法 |
| CN107015029A (zh) * | 2017-05-11 | 2017-08-04 | 四川理工学院 | 原子力显微镜接触模式表征用碳素材料样本的制做方法 |
| CN107015029B (zh) * | 2017-05-11 | 2019-12-13 | 四川理工学院 | 原子力显微镜接触模式表征用碳素材料样本的制做方法 |
| US11624902B2 (en) | 2017-11-24 | 2023-04-11 | Hamamatsu Photonics K.K. | Wafer inspection method and wafer |
| CN111480105A (zh) * | 2017-11-24 | 2020-07-31 | 浜松光子学株式会社 | 晶圆的检查方法及晶圆 |
| CN111480105B (zh) * | 2017-11-24 | 2022-05-31 | 浜松光子学株式会社 | 晶圆的检查方法及晶圆 |
| CN110627376A (zh) * | 2019-09-24 | 2019-12-31 | 上海电机学院 | 一种纳米SiO2超疏水涂层及制备工艺和用途 |
| CN111063610A (zh) * | 2019-12-30 | 2020-04-24 | 上海集成电路研发中心有限公司 | 光刻缺陷修复方法 |
| CN111063610B (zh) * | 2019-12-30 | 2024-02-02 | 上海集成电路研发中心有限公司 | 光刻缺陷修复方法 |
| TWI816149B (zh) * | 2020-06-30 | 2023-09-21 | 德商卡爾蔡司Smt有限公司 | 用於設定微影光罩之至少一圖案元素之至少一側壁角度的方法及設備、用於使用至少一具質量粒子束檢驗微影光罩之至少一缺陷的方法及設備、以及包含指令之電腦程式 |
| CN114014262A (zh) * | 2021-10-13 | 2022-02-08 | 电子科技大学 | 一种石墨烯量子点阵列的微纳复合制备方法 |
| CN120033092A (zh) * | 2025-01-21 | 2025-05-23 | 广东工业大学 | 一种打印纳米铜辅助混合键合工艺的方法 |
| CN120033092B (zh) * | 2025-01-21 | 2025-10-03 | 广东工业大学 | 一种打印纳米铜辅助混合键合工艺的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| ATE419558T1 (de) | 2009-01-15 |
| US20040175631A1 (en) | 2004-09-09 |
| KR20050071599A (ko) | 2005-07-07 |
| WO2004038504A2 (en) | 2004-05-06 |
| US7691541B2 (en) | 2010-04-06 |
| AU2003290531A1 (en) | 2004-05-13 |
| KR101101698B1 (ko) | 2011-12-30 |
| EP1556737B1 (en) | 2008-12-31 |
| EP1556737A2 (en) | 2005-07-27 |
| WO2004038504A3 (en) | 2004-11-04 |
| DE60325629D1 (de) | 2009-02-12 |
| JP2006504136A (ja) | 2006-02-02 |
| AU2003290531A8 (en) | 2004-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1726431A (zh) | 纳米级设计结构、其制造方法及设备以及在掩模修复、增强和制造上的应用 | |
| Mirkin | The power of the pen: development of massively parallel dip-pen nanolithography | |
| Sreenivasan | Nanoimprint lithography steppers for volume fabrication of leading-edge semiconductor integrated circuits | |
| Sreenivasan | Nanoscale manufacturing enabled by imprint lithography | |
| Hu et al. | Tip-based nanofabrication for scalable manufacturing | |
| Zhang et al. | Detection of novel gaseous states at the highly oriented pyrolytic graphite− water interface | |
| Rozhok et al. | Dip-pen nanolithography: what controls ink transport? | |
| Li et al. | Elucidating the role of surface hydrolysis in preparing organosilane nanostructures via particle lithography | |
| Liddle et al. | Lithography, metrology and nanomanufacturing | |
| KR101165484B1 (ko) | 기판 표면에 잉크를 전달하는 방법, 도전성 금속을 기입하는 방법, 나노리소그래피 또는 마이크로리소그래피용 잉크 제형, 금속 트레이스를 침착시키기 위한 방법, 평판 표시 장치 기판의 수리 방법 및 장치 | |
| TW200426496A (en) | Formation of discontinuous films during an imprint lithography process | |
| Higashiki et al. | Nanoimprint lithography for semiconductor devices and future patterning innovation | |
| Imboden et al. | Top-down nanomanufacturing | |
| CN101519184A (zh) | 利用光热效应制作应用基板的方法 | |
| Takeishi et al. | Nanoimprint system development and status for high volume semiconductor manufacturing | |
| Garno et al. | Directed electroless growth of metal nanostructures on patterned self-assembled monolayers | |
| Yeshua et al. | Micrometer to 15 nm printing of metallic inks with fountain pen nanolithography | |
| Fourkas et al. | Grand challenges in nanofabrication: There remains plenty of room at the bottom | |
| Schoot et al. | Next-generation lithography–an outlook on EUV projection and nanoimprint | |
| Takashima et al. | Nanoimprint system development and status for high-volume semiconductor manufacturing | |
| Resnick et al. | Imprint lithography: lab curiosity or the real NGL | |
| HK1088079A (en) | Nanometer-scale engineered structures, methods and apparatus for fabrication thereof, and applications to mask repair, enhancement, and fabrication | |
| US8142704B2 (en) | Imprint lithography system and method | |
| Kumar et al. | Lithography and 3D fabrication processes: a review | |
| Emoto et al. | Defectivity and particle reduction for mask life extension, and imprint mask replication for high-volume semiconductor manufacturing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1088079 Country of ref document: HK |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1088079 Country of ref document: HK |