CN1698193A - 一种形成分层半导体工艺结构的方法与相应的分层半导体工艺结构 - Google Patents
一种形成分层半导体工艺结构的方法与相应的分层半导体工艺结构 Download PDFInfo
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- CN1698193A CN1698193A CNA028201957A CN02820195A CN1698193A CN 1698193 A CN1698193 A CN 1698193A CN A028201957 A CNA028201957 A CN A028201957A CN 02820195 A CN02820195 A CN 02820195A CN 1698193 A CN1698193 A CN 1698193A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32875901P | 2001-10-12 | 2001-10-12 | |
US60/328,759 | 2001-10-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1698193A true CN1698193A (zh) | 2005-11-16 |
CN1316586C CN1316586C (zh) | 2007-05-16 |
Family
ID=23282315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028201957A Expired - Fee Related CN1316586C (zh) | 2001-10-12 | 2002-10-11 | 一种形成分层半导体工艺结构的方法与相应的分层半导体工艺结构 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7294564B2 (zh) |
EP (1) | EP1435110B1 (zh) |
JP (1) | JP4225905B2 (zh) |
KR (1) | KR100618103B1 (zh) |
CN (1) | CN1316586C (zh) |
AU (1) | AU2002340555A1 (zh) |
DE (1) | DE60211190T2 (zh) |
WO (1) | WO2003034484A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101385138B (zh) * | 2006-01-12 | 2011-05-11 | Nxp股份有限公司 | 具有正面衬底接触的绝缘体上半导体器件的制造方法 |
CN102203913A (zh) * | 2008-10-02 | 2011-09-28 | 瓦里安半导体设备公司 | 植入制程的热模组 |
CN101501836B (zh) * | 2006-08-30 | 2012-08-22 | 硅电子股份公司 | 多层半导体晶片及其制造方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2843061B1 (fr) * | 2002-08-02 | 2004-09-24 | Soitec Silicon On Insulator | Procede de polissage de tranche de materiau |
US7749881B2 (en) | 2005-05-18 | 2010-07-06 | Intermolecular, Inc. | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region |
US8084400B2 (en) | 2005-10-11 | 2011-12-27 | Intermolecular, Inc. | Methods for discretized processing and process sequence integration of regions of a substrate |
US8882914B2 (en) | 2004-09-17 | 2014-11-11 | Intermolecular, Inc. | Processing substrates using site-isolated processing |
US7390739B2 (en) | 2005-05-18 | 2008-06-24 | Lazovsky David E | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region |
US7879710B2 (en) | 2005-05-18 | 2011-02-01 | Intermolecular, Inc. | Substrate processing including a masking layer |
US7309658B2 (en) | 2004-11-22 | 2007-12-18 | Intermolecular, Inc. | Molecular self-assembly in substrate processing |
DE102005024073A1 (de) * | 2005-05-25 | 2006-11-30 | Siltronic Ag | Halbleiter-Schichtstruktur und Verfahren zur Herstellung einer Halbleiter-Schichtstruktur |
US7544574B2 (en) | 2005-10-11 | 2009-06-09 | Intermolecular, Inc. | Methods for discretized processing of regions of a substrate |
US7955436B2 (en) | 2006-02-24 | 2011-06-07 | Intermolecular, Inc. | Systems and methods for sealing in site-isolated reactors |
US8772772B2 (en) | 2006-05-18 | 2014-07-08 | Intermolecular, Inc. | System and method for increasing productivity of combinatorial screening |
US8011317B2 (en) | 2006-12-29 | 2011-09-06 | Intermolecular, Inc. | Advanced mixing system for integrated tool having site-isolated reactors |
JP2009149481A (ja) * | 2007-12-21 | 2009-07-09 | Siltronic Ag | 半導体基板の製造方法 |
DE102008006745B3 (de) * | 2008-01-30 | 2009-10-08 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterstruktur |
EP2172967A1 (en) | 2008-08-04 | 2010-04-07 | Siltronic AG | Method for manufacturing silicon carbide |
US10049914B2 (en) | 2015-11-20 | 2018-08-14 | Infineon Technologies Ag | Method for thinning substrates |
EP4135006A1 (en) | 2021-08-13 | 2023-02-15 | Siltronic AG | A method for manufacturing a substrate wafer for building group iii-v devices thereon and a substrate wafer for building group iii-v devices thereon |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3622382A (en) * | 1969-05-05 | 1971-11-23 | Ibm | Semiconductor isolation structure and method of producing |
WO1997039476A1 (fr) * | 1996-04-18 | 1997-10-23 | Matsushita Electric Industrial Co., Ltd. | ELEMENT EN SiC ET SON PROCEDE DE PRODUCTION |
JP3958404B2 (ja) * | 1997-06-06 | 2007-08-15 | 三菱電機株式会社 | 横型高耐圧素子を有する半導体装置 |
ES2165315B1 (es) * | 2000-03-31 | 2003-08-01 | Consejo Superior Investigacion | Procedimiento de fabricacion de capas de carburo de silicio (sic) mediante implantacion ionica de carbono y recocidos. |
-
2002
- 2002-10-11 DE DE60211190T patent/DE60211190T2/de not_active Expired - Lifetime
- 2002-10-11 JP JP2003537114A patent/JP4225905B2/ja not_active Expired - Fee Related
- 2002-10-11 WO PCT/EP2002/011423 patent/WO2003034484A2/en active IP Right Grant
- 2002-10-11 KR KR1020047005378A patent/KR100618103B1/ko not_active IP Right Cessation
- 2002-10-11 CN CNB028201957A patent/CN1316586C/zh not_active Expired - Fee Related
- 2002-10-11 US US10/492,329 patent/US7294564B2/en not_active Expired - Fee Related
- 2002-10-11 AU AU2002340555A patent/AU2002340555A1/en not_active Abandoned
- 2002-10-11 EP EP02774705A patent/EP1435110B1/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101385138B (zh) * | 2006-01-12 | 2011-05-11 | Nxp股份有限公司 | 具有正面衬底接触的绝缘体上半导体器件的制造方法 |
CN101501836B (zh) * | 2006-08-30 | 2012-08-22 | 硅电子股份公司 | 多层半导体晶片及其制造方法 |
CN102203913A (zh) * | 2008-10-02 | 2011-09-28 | 瓦里安半导体设备公司 | 植入制程的热模组 |
CN102203913B (zh) * | 2008-10-02 | 2014-12-10 | 瓦里安半导体设备公司 | 植入制程的热模组 |
Also Published As
Publication number | Publication date |
---|---|
KR100618103B1 (ko) | 2006-08-29 |
WO2003034484A3 (en) | 2003-09-18 |
EP1435110B1 (en) | 2006-05-03 |
AU2002340555A1 (en) | 2003-04-28 |
JP4225905B2 (ja) | 2009-02-18 |
US20040248390A1 (en) | 2004-12-09 |
DE60211190T2 (de) | 2006-10-26 |
DE60211190D1 (de) | 2006-06-08 |
CN1316586C (zh) | 2007-05-16 |
KR20050035156A (ko) | 2005-04-15 |
JP2005506699A (ja) | 2005-03-03 |
WO2003034484A2 (en) | 2003-04-24 |
US7294564B2 (en) | 2007-11-13 |
EP1435110A2 (en) | 2004-07-07 |
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