CN1691301A - 制造连接结构的方法 - Google Patents
制造连接结构的方法 Download PDFInfo
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- CN1691301A CN1691301A CNA2005100518420A CN200510051842A CN1691301A CN 1691301 A CN1691301 A CN 1691301A CN A2005100518420 A CNA2005100518420 A CN A2005100518420A CN 200510051842 A CN200510051842 A CN 200510051842A CN 1691301 A CN1691301 A CN 1691301A
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Abstract
一种用于制造连接结构(100)的方法,该连接结构具有在其间由焊料制成的焊接层(30)结合的第一和第二连接部件(10,20),该方法包含以下步骤:在第一和第二连接部件(10,20)之间夹上焊接层(30);在保持第一温度的情况下把焊接层(30)降压到第一压强(P1),该温度低于焊料的固相线;在保持第一压强(P1)的情况下把焊接层(30)加热到第二温度,该第二温度高于焊料的液相线;在保持第二温度的情况下把焊接层(30)加压到第二压强(P2),该第二压强(P2)高于第一压强(P1);和在保持第二压强(P2)的情况下使焊料凝固。
Description
技术领域
本发明涉及一种用于制造连接结构的方法,该结构具有通过焊接层结合的第一和第二连接部件。
背景技术
现有技术中具有中间由焊接层结合的第一和第二连接部件的连接结构,例如作为第一连接部件的半导体装置通过焊接层结合到作为第二连接部件的基板或引线框上。所述焊接结合处理以下述方法进行,即把焊料颗粒夹在半导体装置和基板或引线框之间,然后在大气压在连续氢回流炉中对它们进行加热。
在该焊接结合处理中,会在焊接层中产生空隙。该空隙主要是在焊料颗粒熔化时或之后,当熔化的焊料颗粒材料扩散到一个预定范围的时候由在大气周围包裹了空气而在焊接层中产生的。在该空隙分布在焊料层的情况下,这些空隙阻塞了在第一和第二连接部件之间的热辐射通道。由此,降低了热辐射性能。而且,还降低了焊接层的结合强度。
在所述的现有技术中,为了减少在焊接层中的空隙,减小焊料颗粒的表面积以便适当地设计焊接层的形状。此外,用于熔化焊料的处理时间变得更长以便适当地确定在焊接结合处理中的温度曲线。特别地,在日本专利申请公开号平05-283570和平06-69387中,在通过焊接层把大尺寸功率器件结合到基板的情形中,在减压的大气中进行焊接结合处理。这里,该功率器件适用于控制大的电功率的功率模块。这是因为该功率装置需要具有足够的热辐射性能。在这种情况下,第一和第二连接部件中间夹上焊接层,然后熔融该焊接层。此后,通过真空系统对气氛降压以便去除在焊接层中的空隙。这样,就减少了在焊接层中的空隙数目。
但是,上述方法存在以下问题。例如,当在消沫(defoaming)过程中去除大尺寸功率器件中焊接层内的空隙时,由于焊接层的面积变大,所以需要比较低的压力来去除空隙。因此,需要具有高抽真空性能的真空系统,而且,还需要长时间来抽真空。由此,增加了制造成本。此外,最近,焊料基本上不再含铅(即,Pb),因而和含铅的焊料相比,上述需要更为迫切。
特别地,不含铅的焊料(即,无Pb焊料)具有比常规含铅焊料更大的大表面张力。因此,无Pb焊料具有低的扩展到连接部件的焊料可湿性,使得无Pb焊料不会扩展很广。因此,当熔化和扩展无Pb焊料时,很容易在熔化的无Pb焊料中引入气氛气体。此外,不容易去除空隙。因此,很容易在焊接层中产生空隙。
发明内容
考虑到上述问题,本发明的一个目的是提供一种新的制造方法,用于制造具有通过焊接层相结合的第一和第二连接部件的连接结构。
提供了一种制造连接结构的方法,该结构具有其间结合由焊料构成的焊接层的第一和第二连接部件。该方法包括步骤:在第一和第二连接部件之间夹上焊接层;在保持第一温度的情况下把带有焊接层的第一和第二连接部件降压到第一压强,该温度低于焊料的固相线;在保持第一压强的情况下把带有焊接层的第一和第二连接部件加热到第二温度,该第二温度高于焊料的液相线;在保持第二温度的情况下把带有焊接层的第一和第二连接部件加压到第二压强,该第二压强高于第一压强;和在保持第二压强的情况下使焊料凝固。
在上述方法中,即使当熔化的焊料颗粒包含大气气体使得形成空隙时,空隙也会因为第二压强而破裂。这是因为空隙的内部压强是第一压强,但气体压强变成了高于第一压强的第二压强,所以空隙就破裂了。这样,空隙变得非常小或者消失,使得在熔化的焊料颗粒中的空隙减少。由此,本降压消沫方法不需要具有高抽真空性能的真空系统作为用于降低连接结构的压强的降压装置。此外,用于降低该结构的压强的降压处理时间也变得更短;并且,因此以低成本有效地减少了焊接层中的空隙。
优选地,该方法还包括步骤:在保持降压步骤之前的大气压的情况下,把带有焊接层的第一和第二连接部件预先加热到一个预先加热温度,该预先加热温度等于或低于焊料的固相线。而且,焊料优选为由无铅焊料构成。
附图说明
通过以下参考附图的详细说明,本发明的上述和其它目的,特征和优点将变得更清楚。这些图中:
图1是表示根据本发明一个优选实施例的连接结构的截面图;
图2是表示根据该优选实施例焊接前结构的截面图;
图3是表示根据该优选实施例的空隙面积率和降压处理中压强之间关系的图表;
图4A是表示作比较的降压消沫方法过程中的温度曲线和压强曲线图,和图4B到4D是表示根据该优选实施例,所述结构在每个步骤中的截面图;和
图5A是在降压消沫方法的过程中的温度曲线和压强曲线图,和图5B到5D是表示根据该优选实施例,所述该结构在每个步骤中的截面图。
具体实施方式
图1中示出了根据本发明一个优选实施例的连接结构100。该连接结构100包括作为第一连接部件的IGBT装置10(绝缘栅双极型晶体管)和作为第二连接部件的陶瓷基板20,它们通过焊接层30相结合。IGBT装置10是常规的硅半导体芯片,其包括通过常规半导体工艺制造的IGBT。由铝制成的陶瓷基板20包括布线等。
这里,在IGBT装置上的IGBT和焊接层30之间的连接部分处形成一个镍电极,并在陶瓷基板20上的基板20和焊接层30之间的另一个连接部分处形成另一镍电极。镍电极是通过镍电镀方法形成的。由此,镍电极和焊接层30直接结合以使焊接层可以牢固地连接到基板20或IGBT装置。这样,可以确保其间的焊接强度。
焊接层30由基本上不含铅的无Pb焊料制成。例如,无Pb焊料包括小重量百分比的锑(即Sb)和剩余百分比的锡(即Sn)。尽管第一和第二连接部件10、20是功率器件,例如IGBT的和陶瓷基板,但是第一和第二连接部件也可以是其它部件,例如电阻器装置、电容器装置,和印刷电路,只要这些部件能被焊接。
在连接结构100中,通过焊接层30把IGBT装置10和陶瓷基板20机械地、电地和热连接。在IGBT装置10中产生的热可以通过焊接层30从陶瓷基板20辐射掉。
按下述来制造连接结构100。把焊料颗粒夹在IGBT装置10和陶瓷基板20之间,此后,在等于或低于焊接层30的固相线的温度下给它们降压。随后,在降压后的状态下把它们加热到等于或高于焊接层30的液相线的温度。然后,在等于或高于焊接层30的液相线的温度下把它们加压到高于该降压后状态的压强。在此之后,冷却它们使得熔化的焊料颗粒凝固成焊接层30。
这里,在等于或低于焊接层30的固相线的温度下降压后的压强等于或低于5×104Pa。此外,在等于或高于焊接层30的液相线的温度下的高于该降压后状态的压强等于大气压。
优选地,在等于或低于焊接层30的固相线的温度下的降压后的压强等于或低于1×104Pa。进一步优选地,在等于或低于焊接层30的固相线的温度下的降压后的压强等于或低于6×103Pa。
此外,优选在等于或低于焊接层30的固相线的温度下对焊料颗粒降压之前,在大气压下把焊料颗粒预先加热到等于或低于焊接层30的固相线的温度。
接下来,连接结构100的功能描述如下。
IGBT装置10的尺寸是13mm见方,而陶瓷基板20的尺寸是20mm×40mm。焊料颗粒的尺寸是8mm见方和0.25mm厚。
焊料颗粒是方板状的。图2示出了通过焊料颗粒层压的IGBT装置10和陶瓷基板20。图3示出了在焊接层30中的空隙产生率,将其确定为空隙面积比率。特别地,作为空隙面积比率的空隙产生率是通过分析X线透视照片获得的。该照片从连接结构100的顶视方向拍摄,然后,由图像处理方法对该照片进行处理。由此,得到空隙面积比率。空隙面积比率由在IGBT装置10和基板20之间扩展的焊接层和空隙之间的面积比率来定义。需要该空隙面积比率例如等于或小于2%,这是所需要的设计值(即,目标空隙面积比率)。
图3中,示为IIIA的点表示形成具有无铅焊接层的结构100,其中在焊料颗粒熔化前对其降压。示为IIIB的点表示形成具有无铅焊接层的结构100,其中在焊料颗粒熔化后对其降压。示为IIIC的点表示具有按常规方法形成的无铅焊接层的结构100。示为IIID的点表示具有按常规方法形成的Pb-Sn焊接层的结构100。这里,点IIIA表示按照根据本发明优选实施例的方法制造的结构。其它三个点IIIB-IIID表示作为该实施例比较例的结构。
在点IIID中,按照这样的方法制造结构100,即Pb-Sn焊接层由例如10wt.%的Sn和剩余百分比的Pb通过在大气压(即,图3中1×105Pa)下在连续氢还原炉中焊接而成。在这种情况下,通过优化焊料颗粒的形状和焊料颗粒的回流曲线,可以获得等于或小于2wt.%的空隙面积比率。特别地,具有方板形状的焊料颗粒的表面积变得更小以使得在焊接层中产生空隙受到限制。此外,熔化处理时间变得更长使得在焊接层中产生的空隙适当地被去除。这里,在图3中表示为点IIID的空隙面积比率是最优情况,其按照常规方法通过使用在大气压下处理的Pb焊接层来制造连接结构。
在点IIIC中,按照这样的方法制造结构100,即无铅焊接层由例如5wt.%的Sb和剩余百分比的Sn通过在大气压(即,图3中1×105Pa)下在连续氢还原炉中焊接而成。在这种情况下,即使对焊料颗粒的形状和焊料颗粒的回流曲线进行优化,也无法获得等于或小于2wt.%的空隙面积比率。这是因为无铅焊料具有高表面张力,因此焊料不能在连接部件上充分扩展。
在点IIIB中,按照这样的方法制造结构100,即无铅焊接层通过在降低的压强下回流形成。特别地,在降低的压强下把在无铅焊料中的空隙从焊接层中去除了。在这种情况下,无铅焊料颗粒熔化,然后,将熔化的焊料颗粒降压。把这种用于去除空隙的方法定义为比较降压消沫法。在这种比较降压消沫法中,无铅焊接层由例如5wt.%的Sb和剩余百分比的Sn通过在图4A到4D中示出的工艺中焊接而成。图4A示出了在比较降压消沫法中焊接工艺的温度曲线和压强曲线。按顺序执行图4A中的步骤S1-S6。可以通过具有能够回流和降压的真空腔的焊接设备来进行该焊接工艺。图4B示出了在步骤S1中的结构,图4C示出了在步骤S3中的结构,图4D示出了在步骤S5中的结构。
在步骤S1中,把用于形成焊接层30的焊料颗粒夹在IGBT装置10和陶瓷基板20之间,然后,把它们装入真空腔室中。在室温(即,R.T.)下把该真空腔室从大气压(即,1atm)抽真空到一个预定降低的压强。接着,把纯氮气,纯氢气,或者氮气和氢气的混合气体引入到真空腔室中使其等于大气压。由此,在真空室中的大气变换成了焊料气体。
在步骤S2中,保持在腔室中的大气压,并将焊料颗粒的温度升高到焊接层30的固相线。这样,在步骤S2中执行了对焊料颗粒的预先加热。这里,在焊料颗粒由5wt.%的Sb和剩余百分比的Sn形成的情况下,固相线的温度大约为235℃,液相线的温度约为240℃。可以在包含焊料颗粒的焊料(即,焊接层30)的相平衡图的基础上轻松地获得焊接层30的固相线和液相线的温度。
作为预先加热温度的低于焊接层30的固相线的预定温度是例如200℃。这种预先加热用来对焊料颗粒,IGBT装置10和基板20加热以清洁它们的表面。
在步骤S3中,保持大气压,并把连接结构100从预先加热温度加热到高于组成焊接层30的焊料液相线的温度。由此,以主加热温度进行主加热处理。该主加热温度是例如280℃。该主加热处理用来将焊料颗粒熔化,以便熔化的焊料颗粒扩展在预定的区域上。在这种情况下,熔化的焊料颗粒会吸收在熔化的焊料颗粒周围的气氛气体。因此,在图4C中示出的空隙31会形成在熔化的焊料颗粒中。空隙31具有在空隙31内的内部压强,该压强等于大气压。
在步骤S4中,保持主加热温度以使熔化的焊料颗粒扩展到预定的区域,接着,把该结构从大气压抽真空到一个预定压强。由此,所述结构处于降压状态。该降低的压强定义为P0。在步骤S4中,从熔化的焊料颗粒中除去空隙31,从而执行空隙消沫处理。
在步骤S5中,保持主加热温度,通过将焊接气体引入到腔室中,把该结构从降低的压强P0加压到一个预定压强。该预定压强高于降低的压强,并且在图4A中,该预定的压强等于大气压。
在步骤S6中,保持大气压,并把熔化的焊料颗粒冷却到室温,使得熔化的焊料颗粒凝固。由此,形成焊接层30,并完成连接结构。这里,步骤S1到S6的整个处理需要大约15分钟。
比较降压消沫法可以有效地除去空隙。在图3中示为IIIB的点表示在步骤S4中空隙面积比率和降低的压强P0之间的关系。当降低的压强P0等于或低于3000Pa时,空隙面积比率变得等于或小于2%,从而获得了目标空隙面积比率。
但是,考虑到空隙面积比率的变化,需要将降低的压强P0设为等于或低于100Pa。因此,在控制温度的情况下从大气压降到预定的压强需要很长时间。这样,空隙面积比率取决于用于除去空隙的处理时间和降低的压强P0。因此,为了执行制造连接结构的比较降压消沫法,需要昂贵的真空系统(即,降压装置),并且还需要延长用于对腔室降压的处理时间。因此,增加了连接结构的制造成本。
考虑到比较降压消沫法的上述问题,在图3中,用于根据本发明优选实施例制造连接结构100的降压消沫法表示为点IIIA。
在点IIIA中,按这样的方法制造结构100,由例如5wt.%的Sb和剩余百分比的Sn构成的无铅焊接层通过下面图5A到5D所示的工艺而形成。在这种情况下,在对颗粒降压后熔化无铅焊料颗粒。图5A示出了在该降压消沫法中焊接工艺的温度曲线和压强曲线。按顺序执行图5A中的步骤T1-T7。可以由具有能够回流和降压的真空腔室的焊接设备执行该焊接工艺。图5B示出了在步骤T1中的结构,图5C示出了在步骤T5中的结构,图5D示出了在步骤T6中的结构。在图5A中的温度曲线示出了把焊料颗粒预先加热到等于或低于包括焊料颗粒的焊料(即,焊接层30)的固相线的温度。接着,在另一个等于或高于焊料的液相线的预定温度下执行主加热处理。在图5A中的压强曲线示出了该方法的特征。
在步骤T1中,形成焊接层30的焊料颗粒夹在IGBT装置10和陶瓷基板20之间,然后,把它们置于真空腔室中。在室温(即,R.T.)下将该真空腔室从大气压(即,1atm)抽真空到预定降低的压强。接着,把纯氮气,纯氢气,或者氮气和氢气的混合气体引入到真空腔室中使其等于大气压。由此,在真空腔室中的大气变换成了焊料气体。
在步骤T2中,保持在腔室中的大气压,并将焊料颗粒的温度从室温增加到一个低于焊接层30的固相线的预定温度。由此,在步骤T2中执行了对焊料颗粒的预先加热。这里,在焊料颗粒由5wt.%的Sb和剩余百分比的Sn形成的情况下,固相线的温度约为235℃,和液相线的温度约为240℃。焊接层30的固相线和液相线的温度能够在包含焊料颗粒的焊料(即,焊接层30)的相平衡图的基础上容易地获得。
作为预先加热温度的低于焊接层30的固相线的预定温度是例如200℃。该预先加热用来对焊料颗粒,IGBT装置10和基板20加热以清洁它们的表面。
在步骤T3中,保持预先加热温度,并把连接结构100从大气压降到第一压强P1。
在步骤T4中,保持第一压强P1,并把连接结构100加热到等于焊料的液相线的预定温度。在这种情况下,焊料颗粒在降压压强P1下熔化。
在步骤T5中,保持第一压强P1,并将连接结构100从接近液相线的温度加热到高于焊料的液相线的预定主加热温度。由此,以主加热温度执行主加热处理。该主加热温度是例如280℃。
在步骤T4和T5中,焊料颗粒熔化,使得该熔化的焊料颗粒扩展到预定的区域。在这种情况下,该熔化的焊料颗粒会吸收该熔化的焊料颗粒周围的气氛气体。因此,会在图5C中示出的熔化的焊料颗粒中形成空隙31。空隙31具有在空隙31内的内部压强,该压强等于降低的压强P1。
在步骤T6中,保持主加热温度以使熔化的焊料颗粒扩展到预定的区域,接着,通过把焊接气体引入到腔室中使得将该结构从第一压强P1加压到第二压强P2。该第二压强P2高于第一压强P1。在图5中,第二压强P2等于大气压。
在步骤T7中,保持大气压,并把熔化的焊料颗粒冷却到室温,使得该熔化的焊料颗粒凝固。由此,形成焊接层30,并完成连接结构。这里,步骤T1到T6的整个工艺需要大约15分钟。
该降压消沫法有效地除去空隙。在步骤T4和T5中空隙面积比率和第一压强P1之间的关系在图3中示为点IIIA。即使当作为降低的压强的第一压强P1比较高的时候,空隙31也会减少,使得和比较降压消沫法相比,空隙面积比率变得更小。特别地,在比较降压消沫法的情况下,当降低的压强P0变得小于3000Pa的时候,可以获得目标空隙面积比率(即,2%的比率)。但是,在该降压消沫法的情况中,当第一压强P1变得小于50000Pa时就可以获得目标空隙面积比率了。而且,在第一压强是10000Pa的情况下,该降压消沫法的空隙面积比率基本等于在图3中的点IIID所示出的、通过使用在大气压下处理的Pb焊接层的常规方法最优化制造的连接结构的情况下的空隙面积比率。此外,即使当在比较降压消沫法中把降压后的压强P0设置为等于或小于100Pa的时候,空隙面积比率也不会减少到低于1%。可是,当在该降压消沫法中把第一压强P1设置到等于或低于6000Pa的时候,就可以轻易和稳定地获得低于1%的空隙面积比率。
由此,在该降压消沫法中,作为IGBT装置10的第一连接部件和作为陶瓷基板20的第二连接部件之间夹有作为焊接层30的焊料颗粒,然后,在低于包含焊料颗粒的焊料的固相线的预定温度下对焊料颗粒降压。接着,保持降压后的压强,并把焊料颗粒加热到高于焊料的液相线的预定温度。在此之后,在保持高于液相线的温度下将焊料颗粒加压到高于降压后的压强的预定压强。随后,将熔化的焊料颗粒冷却得以形成焊接层30。
在本方法中,当把焊料颗粒加热到高于液相线的预定温度时,即步骤T5,该焊料颗粒熔化并且对气体降压。因此,如图5C中所示,即使当熔化的焊料颗粒包含气氛气体以致形成空隙31的时候,空隙31具有降压后的第一压强P1。接下来,在步骤T6中,在高于液相线的温度下,把该熔化的焊料颗粒从第一压强P1加压到高于第一压强P1的第二压强P2。由此,第二压强P2将空隙31挤破。这是因为在步骤T6之前空隙31的内部压强是第一压强P1。在步骤T6中,气体压强变成了第二压强P2,其高于第一压强P1,使得空隙31被挤破。
由此,空隙31变得更小或消失,使得在熔化的焊料颗粒中空隙31变少。因此,即使没有把第一压强P1设置为和比较降压法相比较低的压强,也可以适当地减少空隙。特别地,即使当把第一压强P1设置为比降压后的压强P0高的压强,空隙31也会大大减少。
因此,该降压消沫法不需要具有高抽真空性能的真空系统作为降压装置用于对连接结构100降压。此外,用于对结构100降压的降压处理时间变得更短;并且,由此以低成本有效地减少在焊接层30中的空隙31。
如上所述,在用于制造连接结构100的降压消沫法中,优选在步骤T3到T5的降压处理中的第一压强P1等于或低于5×104Pa。此外,优选高于该第一压强P1的第二压强P2等于大气压,即latm。在这种情况下,可以有效减少空隙31。特别地,当第二压强P2等于大气压时,就不需要用于对结构100加压的额外的加压机,这样用于制造结构100的设备变得简单。由此,减少了制造成本。
此外,在本方法中,把第一压强P1设置为等于或低于5×104Pa,使 隙面积比率变得比目标比率更低。但是,在比较降压消沫法中,为了将空隙面积比率减少到低于目标比率,需要降压后的压强P0等于或低于3000Pa,这几乎比5×104Pa低了一个数量级。
优选把第一压强P1设置为等于或低于1×104Pa。在这种情况下,如图3中点IIIA所示的空隙面积比率大约等于在图3中的点IIID所示的、通过使用在大气压下处理的Pb焊接层的常规方法最优化制造的连接结构的情况下的空隙面积比率。该空隙比率在常规方法中是通过优化制造过程的焊料颗粒形状和温度曲线的最小比率。
此外,优选本方法中的第一压强P1等于或低于6×103Pa。在这种情况下,在图3中点IIIA所示的空隙面积比率大约等于在图3中点IIIB所示的在按照比较方法最优化制造连接结构的情况下的空隙面积比率的一半(即,1%)。
在本实施例中,如图5中的步骤T2所示,在低于固相线的预定温度下把结构100降压到第一压强P1之前,在大气压下把焊料颗粒预先加热到低于固相线的预定温度。在这种情况下,通过预先加热对焊料颗粒的表面进行清洁。因此,优选在制造方法中使用预先加热。但是,该预先加热处理是可以跳过的。
(修改)
尽管把第二压强P2设置为等于大气压,但是也可以把第二压强P2设置为另一压强,只要第二压强P2高于压强P1即可。例如,可以把第二压强P2设置为高于大气压。在这种情况下,把第一压强P1设置为等于上述实施例中的压强。此外,可以按这样的方法设置第一压强P1,即在第二压强P2高于大气压的情况下的第一和第二压强P1、P2之间的压强差等于或大于在第二压强P2等于大气压的情况下的压强差。
尽管该焊料颗粒不含铅,但是焊料颗粒也可以含铅。此外,焊料颗粒可以由其它焊料例如Pb-Sn焊料制成。
尽管该第一连接部件是IGBT装置10,和第二连接部件是陶瓷基板20,但是第一连接部件也可以是电阻器装置或电容器装置,和第二连接部件也可以是印刷电路板。此外,第一和第二连接部件可以是其它装置或基板,只要它们是通过焊料结合的即可。
在由所附权利要求定义的本发明的范围内,这样的变化和修改是可以理解的。
Claims (6)
1.一种用于制造连接结构(100)的方法,该连接结构具有在其间由焊料制成的焊接层(30)结合的第一和第二连接部件(10,20),该方法包含以下步骤:
在第一和第二连接部件(10,20)之间夹上焊接层(30);
在保持第一温度的情况下把带有焊接层(30)的第一和第二连接部件(10,20)降压到第一压强(P1),该第一温度低于焊料的固相线;
在保持第一压强(P1)的情况下把带有焊接层(30)的第一和第二连接部件(10,20)加热到第二温度,该第二温度高于焊料的液相线;
在保持第二温度的情况下把带有焊接层(30)的第一和第二连接部件(10,20)加压到第二压强(P2),该第二压强(P2)高于第一压强(P1);和
在保持第二压强(P2)的情况下使焊料凝固。
2.根据权利要求1的方法,其中
第一压强(P1)等于或低于5×104Pa,和
第二压强(P2)等于大气压。
3.根据权利要求2的方法,其中
第一压强(P1)等于或低于1×104Pa。
4.根据权利要求3的方法,其中
第一压强(P1)等于或低于6×103Pa。
5.根据权利要求1-4的任一项的方法,还包括以下步骤:
在保持降压步骤之前的大气压的情况下把带有焊接层(30)的第一和第二连接部件(10,20)预先加热到一个预先加热温度,该预先加热温度等于或低于焊料的固相线。
6.根据权利要求1-4的任一项的方法,其中
焊料为由无铅焊料构成。
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CN103229604A (zh) * | 2010-11-23 | 2013-07-31 | 三菱电机株式会社 | 回流焊装置及回流焊方法 |
CN104520976A (zh) * | 2012-08-08 | 2015-04-15 | 松下知识产权经营株式会社 | 安装方法 |
CN105789074A (zh) * | 2015-01-09 | 2016-07-20 | 瑞萨电子株式会社 | 用于制造半导体器件的方法 |
CN112654453A (zh) * | 2018-10-01 | 2021-04-13 | 株式会社弘辉 | 接合结构体的制造方法 |
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JP4721270B2 (ja) * | 2005-08-24 | 2011-07-13 | 日本無線株式会社 | アンテナ製造方法 |
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JP2007207899A (ja) * | 2006-01-31 | 2007-08-16 | Toyota Industries Corp | 半田付け装置、半田付け方法、及び半導体装置の製造方法 |
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DE102007010882B4 (de) * | 2007-03-06 | 2009-01-29 | Infineon Technologies Ag | Verfahren zur Herstellung einer Lötverbindung zwischen einem Halbleiterchip und einem Substrat |
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DE202011107022U1 (de) * | 2011-10-21 | 2012-04-05 | Asscon Systemtechnik-Elektronik Gmbh | Vorrichtung zum Löten |
JP2017199842A (ja) * | 2016-04-28 | 2017-11-02 | 株式会社光波 | Led光源装置 |
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US5651493A (en) * | 1995-04-24 | 1997-07-29 | International Business Machines Corporation | Method of performing solder joint analysis of semi-conductor components |
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SE512906C2 (sv) * | 1998-10-02 | 2000-06-05 | Ericsson Telefon Ab L M | Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav |
US20030001286A1 (en) * | 2000-01-28 | 2003-01-02 | Ryoichi Kajiwara | Semiconductor package and flip chip bonding method therein |
JP3809806B2 (ja) * | 2002-03-29 | 2006-08-16 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
-
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CN104520976A (zh) * | 2012-08-08 | 2015-04-15 | 松下知识产权经营株式会社 | 安装方法 |
CN104520976B (zh) * | 2012-08-08 | 2018-01-05 | 松下知识产权经营株式会社 | 安装方法 |
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US11446752B2 (en) | 2018-10-01 | 2022-09-20 | Koki Company Limited | Method for producing joined structure |
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