CN1251942A - 半导体封装、半导体器件及其制造方法 - Google Patents

半导体封装、半导体器件及其制造方法 Download PDF

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CN1251942A
CN1251942A CN99121628A CN99121628A CN1251942A CN 1251942 A CN1251942 A CN 1251942A CN 99121628 A CN99121628 A CN 99121628A CN 99121628 A CN99121628 A CN 99121628A CN 1251942 A CN1251942 A CN 1251942A
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plate
location
mentioned
holding plate
semiconductor element
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森本滋
太田顺道
前田昌宏
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H01L2924/30111—Impedance matching

Abstract

本发明为一种半导体封装、使用该封装的半导体器件及其制造方法。在由铜形成的散热板11上,固定有由陶瓷材料构成的方形的外框部件12。在外框部件12的一边上和面对该一边的另一边上,分别接有可穿过该外框部件12且与散热板11绝缘的输入引线13和输出引线14。在散热板11上的外框部件12的内侧,固定有由金属或者石墨形成的定位板15,它具有能靠着其内壁来限定半导体芯片21或者电路基片22的侧面位置的多个开口部15a。

Description

半导体封装、半导体器件及其制造方法
本发明涉及一种可装配半导体芯片的半导体封装、使用该半导体封装的半导体器件及其制造方法。
下面，参照附图对现有的半导体封装及半导体器件进行说明。
图7(a)和图7(b)表示现有的半导体封装和在该半导体封装中固定了半导体芯片而构成的半导体器件，图7(a)表示密封之前的平面结构，图7(b)表示沿图7(a)中的VIIb-VIIb线切开后的剖面结构。如图7(a)或图7(b)所示，在由铜形成的散热板101上，固定有由绝缘材料构成的外框部件102。在外框部件102上设置有穿通了该外框部件102并与散热板101绝缘的输入引线103A和输出引线103B。
如上所述，现有的半导体封装即由散热板101、外框部件102和输出、入引线103A、103B构成。
如图7(b)所示，在半导体封装的散热板101上的外框部件102的内侧，通过由含锡的合金构成的箔片105固定了形成有为功率放大器的半导体元件的半导体芯片104。
在散热板101上的外框部件102的内侧，在半导体芯片104和输入引线103A之间，和在半导体芯片104和输出引线103B之间，设置有通过散热板101和箔片105而被固定的多个电路基片106。电路基片106由绝缘材料构成，在该电路基片106上形成有可将半导体元件的输出、入阻抗进行匹配的匹配电路。半导体芯片104、电路基片106和输出、入引线103A、103B分别由导线107连接着。
在制造半导体器件时，在软熔(reflowing)炉内，对如图7(a)或者图7(b)所示那样组装了的半导体器件进行热处理而熔解箔片105之后，再把该装置放在室内温度里，这样来把散热板101和半导体芯片104、散热板101和电路基片106分别固定在一起。
然而，在上述现有的半导体封装和半导体器件中，在将由AuSn(金锡)合金构成的箔片105通过软熔处理进行加热并熔解时，由于所熔解的箔片105会扩展到散热板101上去，因此存在了半导体芯片104和电路基片106会被所熔解的箔片105冲跑，导致从所规定的位置错开的问题。
本发明的目的在于：解决上述现有的问题，即在将半导体芯片等固定在半导体封装的保持板上时，免得从所规定的固定位置错开。
为了达到上述目的，在本发明中所采用的半导体封装的结构是：在保持板上设置用来限定半导体芯片的位置的定位板或者在保持板的装配面上形成定位用凹陷部。
具体说来，本发明所涉及的第1个半导体封装包括：在上面可装配半导体元件的保持板；设在保持板上，具有开口部或者切口部的定位板；以及设在保持板上，可把要固定在保持板上的半导体元件和外部导通的引线。定位板通过至少将半导体元件的下部收在开口部或者切口部里，来限定保持板上的半导体元件的位置。
按照第1个半导体封装，由于在保持板上设置了具有开口部或者切口部的定位板，因此在制造时，通过至少将半导体元件的下部收在开口部或者切口部里，使得由定位板来限定在保持板上的半导体元件的侧面位置。结果，即使在制造中的加热处理时将半导体元件和保持板互相接合的接合部件发生熔解，也不引起在保持板上的半导体元件的错位。
第1个半导体封装最好还包括固定在保持板上并可包围定位板的外框部件，由定位板和外框部件来限定保持板上的半导体元件的位置。这样一来，就不用形成定位板的周缘部。再就是，仅通过在外框部件的周缘部上气密地设置能覆盖该外框部件的整个表面的板状部件，便能可靠地并容易地将半导体元件密封起来。
在第1个半导体封装中，所形成的定位板的开口部或者切口部最好包括可让在接合保持板和半导体元件时所熔解的接合部件释放到其内的角落部。例如，在开口部或者切口部的角落部形成比开口部或者切口部的侧面往外凹下的壁面凹陷部。这样一来，在制造时的加热处理中所熔解的接合部件不会溢出到半导体元件上。
第1个半导体封装最好还包括：设在保持板和定位板之间的、开口或者切口形状大致上与定位板的相同的板状的定位板固定用部件。这样一来，通过在可熔解定位板固定用部件的温度下所进行的加热处理，便可在保持板上确实地固着定位板。
本发明所涉及的第2个半导体封装包括：在上面可装配半导体元件的保持板；和可把要固定在保持板上的半导体元件和外部导通的引线。保持板的上面形成有定位用凹陷部，它可至少将半导体元件的下部收在其中，以限定保持板上的半导体元件的位置。
按照第2个半导体封装，由于在保持板上形成了可决定半导体元件的位置的凹陷部，所以在制造时，通过至少将半导体元件的下部收在该凹陷部中，便可由定位用的凹陷部来决定保持板上的半导体元件的位置，因此即使在制造中的加热处理时，用来将半导体元件和保持板接合在一起的接合部件熔解，也在保持板上不发生半导体元件的错位。
本发明所涉及的第1个半导体器件包括：保持板；设在保持板上，具有开口部或者切口部的定位板；至少在将其下部收在定位板的开口部或者切口部中的状态下而被固定在保持板上的半导体元件；以及设在保持板上，可把半导体元件和外部导通的引线。
按照第1个半导体器件，由于该第1个半导体器件由本发明的第1个半导体封装构成，因此便可在保持板上不错位地固定半导体元件，产品的合格率得以提高。
第1个半导体器件最好还包括：固定在保持板上并可包围定位板的外框部件，由定位板和外框部件来决定保持板上的半导体元件的位置。
在第1个半导体器件中，所形成的定位板的开口部或者切口部最好包括可让在接合半导体元件和保持板时所熔解的接合部件释放到其中的角落部。
第1个半导体器件最好还包括：设在保持板和定位板之间的、开口或者切口形状大致上与定位板的相同的板状的定位板固定用部件。
在此情况下，在半导体元件和保持板之间最好还包括用来固定半导体元件和保持板的元件固定用箔状部件，箔状部件的熔点低于定位板固定用部件的熔点。这样一来，由于箔状部件的熔点低于定位板固定用部件的熔点，因此在将近箔状部件的熔点的温度下，定位板固定用部件仍在固相的。因为如此，若在固定半导体元件和保持板时，将加热处理温度设在高于箔状部件的熔点且低于定位板固定用部件的熔点，定位板固定用部件即不熔解，因此不造成定位板的错位。
本发明所涉及的第2个半导体器件包括：在上面形成有凹陷部的保持板；至少在将其下部收在所述保持板的所述凹陷部中的状态下而被固定的半导体元件；以及设在所述保持板上的、可把所述半导体元件和外部导通的引线。
按照第2个半导体器件，由于该第2个半导体器件是由本发明的第2个半导体封装构成的，因此能够在保持板上不错位地固定半导体元件，所以制造时的产品合格率得以提高。
本发明所涉及的半导体器件的制造方法包括：在保持板上配置具有开口部或者切口部的定位板的定位板配置工序；在保持板上的定位板的开口部或者切口部内配置用来固定半导体元件的元件固定用箔状部件的箔状部件配置工序；至少在将半导体元件的下部收在保持板上的定位板的开口部或者切口部内的箔状部件之上的状态下而配置该半导体元件的元件配置工序；以及通过将配置有半导体元件的保持板进行加热而熔解箔状部件，再将所熔解的箔状部件进行冷却而固化，来将保持板和半导体元件固定在一起的元件固定工序。
按照本发明的半导体器件的制造方法，在元件配置工序中，在保持板上配置半导体元件时，至少将半导体元件的下部收在保持板上的定位板的开口部或者切口部内。因此，即使在元件固定工序中熔化箔状部件，半导体元件的侧面位置也可由定位板来限定。从而，在保持板上不再发生错位，制造时的合格率得以提高。
在本发明的半导体器件的制造方法中，定位板配置工序最好包括：在保持板和定位板之间配置开口形状或者切口形状大致上与定位板的相同并熔点高于箔状部件的熔点的板状的定位板固定用部件的工序；和通过将配置有定位板的保持板进行加热而熔解定位板固定用部件，再将所熔解的定位板固定用部件进行冷却而凝固，来将保持板和定位板固定起来的工序。若这样做，由于定位板固定用部件的熔点高于用来固定保持板和半导体元件的箔状部件的熔点，所以在元件固定工序中，定位板固定用部件不发生熔化。因此，定位板不在保持板上发生错位。
在本发明的半导体器件的制造方法中，箔状部件最好由金和锡的合金形成，定位板固定用部件最好由熔点比金和锡的合金高的银焊料形成。
在本发明的半导体器件的制造方法中，元件固定工序最好包括在将可防止半导体元件的翘曲的压件装在该半导体元件上的状态下进行加热的工序。若这样做，在加热处理时不发生半导体元件的翘曲，故可靠地固着保持板和半导体元件。
<附图简介>
图1(a)和(b)表示本发明的第1实施例所涉及的半导体封装及在该半导体封装中固定半导体芯片而构成的半导体器件，(a)是密封之前的平面图，(b)是沿(a)中的Ib-Ib线切开后的剖面图。
图2(a)是本发明的第1实施例所涉及的具有开口部的定位板的平面图；(b)是本发明的第1实施例所涉及的具有切口部的定位板的平面图；(c)是本发明的第1实施例的一个变形例所涉及的具有切口部的定位板的平面图。
图3(a)～(c)是按工序顺序表示本发明的第1实施例所涉及的半导体器件的制造方法的剖面结构图。
图4(a)和(b)是按工序顺序表示本发明的第1实施例所涉及的半导体器件的制造方法的剖面结构图。
图5是表示本发明的第2实施例所涉及的半导体封装及在该半导体封装中固定半导体芯片而构成的半导体器件的剖面结构图。
图6(a)～(c)是按工序顺序表示本发明的第2实施例所涉及的半导体器件的制造方法的剖面结构图。
图7(a)和(b)表示现有的半导体封装及在该半导体封装中固定半导体芯片而构成的半导体器件，(a)是密封之前的平面图，(b)是沿(a)中的VIIb-VIIb线切开后的剖面图。
(第1实施例)
下面，参照附图对本发明的第1实施例加以说明。
图1(a)和图1(b)表示本发明的第1实施例所涉及的半导体封装和在该半导体封装中固定了半导体芯片而构成的半导体器件。图1(a)表示密封之前的平面结构，图1(b)表示沿图1(a)中的Ib-Ib线切开后的剖面结构。如图1(a)所示，例如，在由铜形成的作为保持板的散热板11上，固定有由陶瓷之类的绝缘材料构成的方形的外框部件12。在外框部件12的一边和面对该一边的另一边上分别接有可穿过外框部件12并与散热板11绝缘的输入引线13和输出引线14。
在散热板11上的外框部件12的内侧，固定有由金属或者石墨形成的定位板15，它具有能由其内壁限定半导体芯片21或者电路基片22的位置的多个开口部15a。这里，半导体芯片21、电路基片22、输入引线13和输出引线14分别由导线23互相进行电连接。
如图1(b)所示，在散热板11和定位板15之间，设置有具有和定位板15的开口部15a几乎相同的开口部的作为定位板固定用部件的银(Ag)焊料板16。再就是，在散热板11和半导体芯片21之间以及在散热板11和电路基片22之间，设置有可将它们互相接合的、由金(Au)和锡(Sn)形成的作为箔状部件的合金箔片24。
如上所述，本实施例所涉及的半导体封装由散热板11、外框部件12、输入引线13、输出引线14、具有开口部15a的定位板15以及具有大致上与该定位板15的开口形状相同的开口部的银焊料板16构成。
在本实施例所涉及的半导体芯片21中形成有工作时会成为极其高温的功率放大器。因此，为了降低热电阻，尽量将半导体芯片21作得薄，并在其底面上镀上了金。再就是，电路基片22由陶瓷材料构成，在该电路基片22上形成有可对功率放大器所处理的功率进行分配或者合成，并可将功率放大器的输出、入阻抗进行匹配的、由表面布线和底面电极构成的多个匹配电路。
如图1(a)和图1(b)所示，本实施例所涉及的半导体器件是至少把半导体芯片21和所需的电路基片22的下部收在散热板11上的定位板15的开口部15a内且合金箔片24之上而固定在一起的。此时，只要是定位板15十分大并可由外框部件12限定定位板15的位置，就并不一定非得使用银焊料板16不可。
图2(a)～图2(c)表示本实施例所涉及的定位板及其变形例，图2(a)表示具有可对半导体芯片等进行定位的开口部的定位板的平面结构，图2(b)表示具有定位用的切口部的定位板的平面结构，图2(c)表示图2(b)的一变形例。图2(a)中所示的定位板15具有多个开口部15a。在各开口部15a的角落部形成有可将在接合散热板11和半导体芯片21时会溢出的接合部件积存到其中的接合部件释放用的壁面凹陷部15b。借助于该壁面凹陷部15b，角落部的壁面比角落部以外的壁面更往外凹下，因此，在制造半导体器件时的加热处理中所熔解的作为接合部件的合金箔片24不容易溢出到半导体芯片21等的上面。另外，在本实施例中，在各开口部15a的所有的角落部形成了壁面凹陷部15b，但并不受限于此，仅在互相邻接的开口部15a中彼此面对的角落部形成壁面凹陷部15b，也是可以的。
在图2(b)中所示的定位板15A具有可对半导体芯片21等进行定位的切口部15c，在该切口部15c的角落部也形成有壁面凹陷部15b。
在图2(c)中所示的有关一变形例的定位板15B具有将图2(b)中所示的定位板15A中的切口部15c的各端部除去的形状。在该结构的情况下，半导体芯片等的靠近各切口部15c的开口的侧面，即在同图中位于左端和右端的侧面位置，在设置有外框部件12时，即可由该外框部件12的内壁面来限定。
下面，参照附图说明按上述那样构成的半导体器件的制造方法。
图3(a)～图3(c)和图4(a)及图4(b)是按工序顺序表示本发明的第1实施例所涉及的半导体器件的制造方法的剖面结构图。
首先，如图3(a)所示，在散热板11上，配置互相面对地设置了输入引线13和输出引线14的外框部件12，使得可将散热板11和该输入引线13之间以及散热板11和该输出引线14之间分别进行绝缘。其次，在散热板11上的外框部件12的内侧区域里依次放置银焊料板16和定位板15。然后，把装有定位板15的散热板11放入软熔炉中，将加热温度设在800℃左右来将银焊料板16熔化，然后再将散热板11放到室内温度里，来固化银焊料板16，这样将散热板11和定位板15固定起来。上述加热和固定工序即是所谓的软熔处理。在同一个工序里进行散热板11和外框部件12的软熔处理以及散热板11和定位板15的软熔处理也是可以的，分工序进行也是可以的。
其次，如图3(b)所示，在散热板11上的定位板15的各开口部15a内安放合金箔片24，在所安放的合金箔片24上配置厚度约为50μm左右的半导体芯片21和电路基片22。就这样，若采用本实施例，仅通过将半导体芯片21和电路基片22嵌入定位板15的各开口部15a里，便可在所规定的位置上配置它们。换句话说，仅通过在定位板15中形成所规定的开口部15a，便能可靠地进行定位，所以不用对每个散热板11进行半导体芯片21等的定位处理。再就是，按照此配置工序，即使在组装时在散热板11上稍微加有振动，也可防止在散热板11上的半导体芯片21和电路基片22的错位。
其次，如图3(c)所示，准备由突起部31a和固定有该突起部31a的主体部31b构成的压件31，该突起部31a能与配置在散热板11上的各半导体芯片21或者电路基片22的表面接触。接下来，在将压件31的突起部31a的表面分别面对半导体芯片21和电路基片22的各表面的状态下，将该压件31放在散热板11上。
如上所述，通过使用压件31，便可防止在软熔处理时所发生的半导体芯片21等的翘曲所引起的半导体芯片21等的周缘部从散热板11游离的现象。这里，例如使用可耐软熔处理的石墨作为压件31。
然后，如图4(a)所示，再把装有压件31的散热板11放入软熔炉里，并将加热温度设在300℃左右。通过这样的、在银焊料板16不熔化的温度下的软熔处理，便可仅将合金箔片24熔化。并且，在其上面装有压件31的半导体芯片21也不发生翘曲。然后，再将散热板11放在室内温度里，半导体芯片21和电路基片22就可和散热板11之间不发生错位而能与该散热板11确切地固着。
其次，如图4(b)所示，将压件31从散热板11上拆下来。仅接着，用导线23将输入引线13和输出引线14的位于外框部件12内侧的部分和电路基片22进行电连接，同时用导线23将半导体芯片21和电路基片22连接。就这样，能得到图1(a)和图1(b)所示的半导体器件。
如上所说明过的那样，若按照本实施例所涉及的半导体器件的制造方法，由于在进行半导体芯片21和电路基片22的软熔处理时，便可借助于具有大致上与半导体芯片21或者电路基片22的底面形状相同的开口形状的开口部15a的定位板15，对散热板11上的半导体芯片21和电路基片22的侧面位置加以限定，因此在合金箔片24发生熔化时，半导体芯片21和电路基片22也不会再被所熔解的合金箔片24冲跑。结果，能够防止半导体芯片21和电路基片22在散热板11上的错位。
还有，若采用本实施例，例如在图2(a)中所示，由于在定位板15的开口部15a的角落部形成了壁面凹陷部15b，因此在半导体芯片21等的软熔处理时所熔解的合金箔片24可积存在壁面凹陷部15b中，结果，所熔解的多余的合金箔片24不会从开口部15a中溢出到半导体芯片21等的上面去。
此外，如图4(b)所示，本实施例所涉及的定位板15的开口部15a的壁面高度超过半导体芯片21和电路基片22的高度，但并非要如此，只要有至少可将半导体芯片21和电路基片22的下部收起来的高度即可。
再就是，在使用如图2(c)所示的定位板15B时，不用再将定位板15B和散热板11固定在一起。在这样的情况下，由于在作好半导体器件之后，也可将该定位板15B从散热板11上拆下，故可多次使用该拆下来的定位板15B。结果，可有效地利用资源，又可减少制造成本。
(第2实施例)
下面，参照附图对本发明的第2实施例进行说明。
图5表示本发明的第2实施例所涉及的半导体封装和在该半导体封装中固定了半导体芯片而构成的半导体器件的剖面结构。在图5中，对与图1(b)中所示的构件相同的构件使用同一个符号而不再进行说明。
如图5所示，本实施例所涉及的半导体封装的特征是包括在上面形成有多个定位用凹陷部11a的散热板11A。通过至少将半导体芯片21或者电路基片22的下部收在散热板11A的凹陷部11a中，靠着各凹陷部11a的内壁来限定在散热板11A上的半导体芯片21和电路基片22的位置。
这里，例如，可采用压制法来形成具有基本上和所希望的半导体芯片21或者电路基片22的底面形状相同的开口形状的散热板11A的凹陷部11a。
以下，参照附图说明按上述那样构成的半导体器件的制造方法。
图6(a)～图6(c)是按工序顺序表示本发明的第2实施例所涉及的半导体器件的制造方法的剖面结构图。
首先，如图6(a)所示，在散热板11A上，配置互相面对地设置了输入引线13和输出引线14的外框部件12，使得可将散热板11A和该输入引线13之间以及散热板11A和该输出引线14之间分别进行绝缘。然后，将配置了外框部件12的散热板11A放入软熔炉，将加热温度设在800℃左右来将银焊料(未图示)熔化，然后再将散热板11A放到室内温度里，来固化银焊料，这样将散热板11A和外框部件12固定在一起。接下来，在散热板11A上的各凹陷部11a内安放合金箔片24，在所安放的合金箔片24上配置厚度约为50μm左右的半导体芯片21和电路基片22。
就这样，若采用本实施例，仅通过将半导体芯片21和电路基片22嵌入定位用的各凹陷部11a中，便可在所规定的位置上配置它们。换句话说，仅通过在散热板11A中形成所规定的凹陷部11a，便能可靠地进行定位，所以不用对每个散热板11A进行半导体芯片21等的定位处理。再就是，按照此配置工序，即使在组装时在散热板11A上多少加有振动，也可防止在散热板11A上的半导体芯片21和电路基片22的错位。
其次，如图6(b)所示，再把装有半导体芯片21等的散热板11A放入软熔炉里，并将加热温度设在300℃左右来仅将合金箔片24熔化。然后，再将散热板11A放在室内温度里，半导体芯片21和电路基片22便可和散热板11A之间不发生错位而能与该散热板11A固定在一起。此时，若和第1实施例一样，在半导体芯片21等的上面装置了压件31的状态下进行软熔处理，就可防止半导体芯片21的翘曲发生，故能更可靠地将它们固定在一起。
接下来，如图6(c)所示，用导线23将输入引线13和输出引线14的位于外框部件12内侧的部分和电路基片22进行电连接，同时用导线23将半导体芯片21和电路基片22连接起来。这样，可获得图5所示的半导体器件。
如上所述，若按照本实施例，在对半导体芯片21和电路基片22进行软熔处理时，便可借助于具有开口形状大致上与半导体芯片21或者电路基片22的底面形状相同的凹陷部11a的散热板11A，对该散热板11A上的半导体芯片21和电路基片22的侧面位置加以限定。因此，可防止合金箔片24的熔化所造成的在散热板11A上的半导体芯片21和电路基片22的错位。
综上所述，按照本发明所涉及的第1个半导体封装或者第1个半导体器件，由于在保持板上固定了具有至少可把半导体元件的下部收在其中的开口部或者切口部的定位板，因此，在制造中将半导体元件和保持板互相接合时，即使可接合两者的接合部件发生熔化，半导体元件的侧面位置也可由定位板来限定。结果，能防止半导体元件在保持板上的错位，故可大幅度地提高生产率。
按照本发明所涉及的第2个半导体封装或者第2个半导体器件，由于在保持板上形成了通过至少将半导体元件的下部收在其中，来限定半导体元件的位置的定位用凹陷部，因此，即使在制造中将半导体元件和保持板互相接合时，可接合两者的接合部件发生熔化，半导体元件的侧面位置也可由定位用凹陷部来限定，故能防止半导体元件在保持板上的错位。
按照本发明所涉及的半导体器件的制造方法，在保持板上配置半导体元件时，至少将半导体元件的下部收在保持板上的定位板的开口部或者切口部内。因此，即使在元件固定工序中熔化箔状部件，半导体元件也不在保持板上发生错位，结果，可大幅度地提高制造时的产品合格率。

Claims (15)

1.一种半导体封装，其特征在于包括：
在上面可装配半导体元件的保持板；
设在所述保持板上，具有开口部或者切口部的定位板；以及
设在所述保持板上，可把要固定在所述保持板上的半导体元件和外部导通的引线，
上述定位板通过至少将半导体元件的下部收在上述开口部或者切口部里，来限定上述保持板上的半导体元件的位置。
2.根据权利要求1所述的半导体封装，其特征在于还包括：
固定在上述保持板上并可包围上述定位板的外框部件，
由所述定位板和所述外框部件来决定上述保持板上的半导体元件的位置。
3.根据权利要求1所述的半导体封装，其特征在于：
所形成的上述定位板的上述开口部或者切口部的角落部可让在接合上述保持板和半导体元件时所熔解的接合部件释放到其中。
4.根据权利要求1所述的半导体封装，其特征在于还包括：
设在上述保持板和上述定位板之间的、开口或者切口形状大致上与所述定位板的相同的板状的定位板固定用部件。
5.一种半导体封装，其特征在于包括：
在上面可装配半导体元件的保持板；和
可把要固定在所述保持板上的半导体元件和外部导通的引线，
上述保持板的上面形成有定位用凹陷部，它可至少将半导体元件的下部收在其中，以限定上述保持板上的所述半导体元件的位置。
6.一种半导体器件，其特征在于包括：
保持板；
设在所述保持板上，具有开口部或者切口部的定位板；
至少在将其下部收在所述定位板的所述开口部或者切口部中的状态下而被固定在上述保持板上的半导体元件；以及
设在所述保持板上，可把所述半导体元件和外部导通的引线。
7.根据权利要求6所述的半导体器件，其特征在于还包括：
固定在上述保持板上并可包围上述定位板的外框部件，
由所述定位板和所述外框部件来决定上述保持板上的半导体元件的位置。
8.根据权利要求6所述的半导体器件，其特征在于：
所形成的上述定位板的上述开口部或者切口部的角落部可让在接合上述半导体元件和上述保持板时所熔解的接合部件释放到其中。
9.根据权利要求6所述的半导体器件，其特征在于还包括：
设在上述保持板和上述定位板之间的、开口或者切口形状大致上与所述定位板的相同的板状的定位板固定用部件。
10.根据权利要求9所述的半导体器件，其特征在于：
在上述半导体元件和上述保持板之间，还包括用来固定所述半导体元件和所述保持板的元件固定用箔状部件，
所述箔状部件的熔点低于上述定位板固定用部件的熔点。
11.一种半导体器件，其特征在于包括：
在上面形成有凹陷部的保持板；
至少在将其下部收在所述保持板的所述凹陷部中的状态下而被固定的半导体元件；以及
设在所述保持板上的、可把所述半导体元件和外部导通的引线。
12.一种半导体器件的制造方法，其特征在于包括：
在保持板上配置具有开口部或者切口部的定位板的定位板配置工序；
在所述保持板上的所述定位板的开口部或者切口部内配置用来固定半导体元件的元件固定用箔状部件的箔状部件配置工序；
至少在将上述半导体元件的下部收在所述保持板上的所述定位板的开口部或者切口部内的上述箔状部件之上的状态下而配置该半导体元件的元件配置工序；以及
通过将配置有上述半导体元件的保持板进行加热而熔解上述箔状部件，再将所熔解的箔状部件进行冷却而固化，来将所述保持板和所述半导体元件固定下来的元件固定工序。
13.根据权利要求12所述的半导体器件的制造方法，其特征在于：
上述定位板配置工序包括：
在上述保持板和上述定位板之间配置开口形状或者切口形状大致上与所述定位板的相同并熔点高于上述箔状部件的熔点的板状的定位板固定用部件的工序；和
通过将配置有上述定位板的保持板进行加热而熔解上述定位板固定用部件，再将所熔解的定位板固定用部件进行冷却而固化，来将所述保持板和所述定位板固定下来的工序。
14.根据权利要求13所述的半导体器件的制造方法，其特征在于：
上述箔状部件由金和锡的合金形成，上述定位板固定用部件由银焊料形成。
15.根据权利要求12至14中的任一项所述的半导体器件的制造方法，其特征在于：
上述元件固定工序包括在将可防止上述半导体元件的翘曲的压件装在该半导体元件上的状态下进行加热的工序。
CN99121628A 1998-10-21 1999-10-09 半导体封装、半导体器件及其制造方法 Pending CN1251942A (zh)

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CN100378968C (zh) * 2002-11-21 2008-04-02 株式会社日立制作所 电子装置
CN101222025B (zh) * 2008-01-22 2010-08-04 电子科技大学 有机电致发光器件的封装装置及其封装方法
WO2011124019A1 (zh) * 2010-04-07 2011-10-13 Qin Biao Led灯芯、led芯片及led芯片制造方法

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CN100378968C (zh) * 2002-11-21 2008-04-02 株式会社日立制作所 电子装置
CN101222025B (zh) * 2008-01-22 2010-08-04 电子科技大学 有机电致发光器件的封装装置及其封装方法
WO2011124019A1 (zh) * 2010-04-07 2011-10-13 Qin Biao Led灯芯、led芯片及led芯片制造方法

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