CN1643669A - 用于低介电常数材料的有机组合物 - Google Patents

用于低介电常数材料的有机组合物 Download PDF

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Publication number
CN1643669A
CN1643669A CNA03805938XA CN03805938A CN1643669A CN 1643669 A CN1643669 A CN 1643669A CN A03805938X A CNA03805938X A CN A03805938XA CN 03805938 A CN03805938 A CN 03805938A CN 1643669 A CN1643669 A CN 1643669A
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CN
China
Prior art keywords
formula
composition
adamantane
aryl
porogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA03805938XA
Other languages
English (en)
Chinese (zh)
Inventor
C·－E·李
R·泽雷宾
N·斯雷曼
A·格雷汉
A·纳曼
J·G·斯科尼亚
K·劳
P·G·阿彭
B·科罗勒夫
N·伊瓦莫托
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/158,513 external-priority patent/US7141188B2/en
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN1643669A publication Critical patent/CN1643669A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Insulating Materials (AREA)
CNA03805938XA 2002-01-15 2003-01-14 用于低介电常数材料的有机组合物 Pending CN1643669A (zh)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US35018702P 2002-01-15 2002-01-15
US60/350,187 2002-01-15
US35055702P 2002-01-22 2002-01-22
US60/350,557 2002-01-22
US35301102P 2002-01-30 2002-01-30
US60/353,011 2002-01-30
US37621902P 2002-04-29 2002-04-29
US60/376,219 2002-04-29
US37842402P 2002-05-07 2002-05-07
US60/378,424 2002-05-07
US10/158,513 US7141188B2 (en) 2001-05-30 2002-05-30 Organic compositions
US10/158,513 2002-05-30

Publications (1)

Publication Number Publication Date
CN1643669A true CN1643669A (zh) 2005-07-20

Family

ID=27558468

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA03805938XA Pending CN1643669A (zh) 2002-01-15 2003-01-14 用于低介电常数材料的有机组合物

Country Status (6)

Country Link
EP (1) EP1466356A2 (https=)
JP (1) JP2005516382A (https=)
KR (1) KR20040104454A (https=)
CN (1) CN1643669A (https=)
AU (1) AU2003210504A1 (https=)
WO (1) WO2003060979A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116390972A (zh) * 2020-09-21 2023-07-04 3M创新有限公司 超支化聚合物、其制备方法和包含其的可固化组合物

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4878779B2 (ja) 2004-06-10 2012-02-15 富士フイルム株式会社 膜形成用組成物、絶縁膜及び電子デバイス
US7491658B2 (en) * 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US7531209B2 (en) 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
JP4659486B2 (ja) * 2005-03-01 2011-03-30 富士フイルム株式会社 電子デバイス用絶縁膜、電子デバイス及び電子デバイス用絶縁膜の製造方法
JP2006257212A (ja) * 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd 膜形成用組成物、それを用いた絶縁膜および電子デバイス
JP2007031663A (ja) * 2005-07-29 2007-02-08 Fujifilm Corp 膜形成用組成物、それを用いて形成された絶縁膜及び電子デバイス
JP2007314778A (ja) * 2006-04-26 2007-12-06 Fujifilm Corp 膜形成用組成物、該組成物を用いて形成した絶縁膜及び電子デバイス
US7875315B2 (en) 2006-05-31 2011-01-25 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
US7790234B2 (en) 2006-05-31 2010-09-07 Michael Raymond Ayers Low dielectric constant materials prepared from soluble fullerene clusters
US7919188B2 (en) 2006-05-31 2011-04-05 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
US7883742B2 (en) 2006-05-31 2011-02-08 Roskilde Semiconductor Llc Porous materials derived from polymer composites
JP2010510348A (ja) * 2006-11-17 2010-04-02 ユニバーシティ オブ マサチューセッツ ロウエル 官能性炭化水素ポリマーおよびその生成法
JP2008231259A (ja) * 2007-03-20 2008-10-02 Sumitomo Bakelite Co Ltd 有機絶縁材料
JP2009013116A (ja) 2007-07-05 2009-01-22 Daicel Chem Ind Ltd エチニルフェニルビアダマンタン誘導体
GB2451865A (en) 2007-08-15 2009-02-18 Univ Liverpool Microporous polymers from alkynyl monomers
US12500080B2 (en) * 2022-08-26 2025-12-16 Applied Materials, Inc. Systems and methods for depositing low-K dielectric films
JPWO2024214530A1 (https=) * 2023-04-10 2024-10-17
WO2025243951A1 (ja) * 2024-05-23 2025-11-27 株式会社レゾナック 硬化性組成物、プリプレグ、樹脂フィルム、金属張積層板、プリント配線板、半導体パッケージ及びアセナフチレンポリマ

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3415741B2 (ja) * 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
WO2000031183A1 (en) * 1998-11-24 2000-06-02 The Dow Chemical Company A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
JP3483500B2 (ja) * 1999-05-28 2004-01-06 富士通株式会社 絶縁膜形成材料、絶縁膜形成方法及び半導体装置
JP2001192539A (ja) * 2000-01-13 2001-07-17 Jsr Corp 熱硬化性樹脂組成物、その硬化物およびその硬化物を含む回路基板
US6509415B1 (en) * 2000-04-07 2003-01-21 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
JP4651774B2 (ja) * 2000-04-11 2011-03-16 新日鐵化学株式会社 芳香族オリゴマー、それを配合したフェノール樹脂組成物並びにエポキシ樹脂組成物およびその硬化物
JP2002003683A (ja) * 2000-06-26 2002-01-09 Hitachi Chem Co Ltd 低吸湿低複屈折樹脂組成物、これから得られる成形材、シート又はフィルムおよび光学用部品
TW588072B (en) * 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
US20030006477A1 (en) * 2001-05-23 2003-01-09 Shipley Company, L.L.C. Porous materials
JP2003131001A (ja) * 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
US7049005B2 (en) * 2001-05-30 2006-05-23 Honeywell International Inc. Organic compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116390972A (zh) * 2020-09-21 2023-07-04 3M创新有限公司 超支化聚合物、其制备方法和包含其的可固化组合物

Also Published As

Publication number Publication date
KR20040104454A (ko) 2004-12-10
EP1466356A2 (en) 2004-10-13
AU2003210504A8 (en) 2003-07-30
WO2003060979A3 (en) 2004-07-15
WO2003060979A2 (en) 2003-07-24
AU2003210504A1 (en) 2003-07-30
JP2005516382A (ja) 2005-06-02

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