JP2005516382A - 有機組成物 - Google Patents

有機組成物 Download PDF

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Publication number
JP2005516382A
JP2005516382A JP2003560974A JP2003560974A JP2005516382A JP 2005516382 A JP2005516382 A JP 2005516382A JP 2003560974 A JP2003560974 A JP 2003560974A JP 2003560974 A JP2003560974 A JP 2003560974A JP 2005516382 A JP2005516382 A JP 2005516382A
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JP
Japan
Prior art keywords
composition
formula
aryl
porogen
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003560974A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005516382A5 (https=
Inventor
リー,チャン・エン
ゼレビン,ルースラン
スレイマン,ナスリン
ゲブレブラーン,アマウエル
ナーマン,アンナス
サイコニア,ジョン・ジー
ロー,クライスラー
エイペン,ポール・ジー
コロレブ,ボリス
イワモト,ナンシー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/158,513 external-priority patent/US7141188B2/en
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2005516382A publication Critical patent/JP2005516382A/ja
Publication of JP2005516382A5 publication Critical patent/JP2005516382A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6342Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665Porous materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Insulating Materials (AREA)
JP2003560974A 2002-01-15 2003-01-14 有機組成物 Pending JP2005516382A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US35018702P 2002-01-15 2002-01-15
US35055702P 2002-01-22 2002-01-22
US35301102P 2002-01-30 2002-01-30
US37621902P 2002-04-29 2002-04-29
US37842402P 2002-05-07 2002-05-07
US10/158,513 US7141188B2 (en) 2001-05-30 2002-05-30 Organic compositions
PCT/US2003/000948 WO2003060979A2 (en) 2002-01-15 2003-01-14 Organic compositions for low dielectric constant materials

Publications (2)

Publication Number Publication Date
JP2005516382A true JP2005516382A (ja) 2005-06-02
JP2005516382A5 JP2005516382A5 (https=) 2006-03-23

Family

ID=27558468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003560974A Pending JP2005516382A (ja) 2002-01-15 2003-01-14 有機組成物

Country Status (6)

Country Link
EP (1) EP1466356A2 (https=)
JP (1) JP2005516382A (https=)
KR (1) KR20040104454A (https=)
CN (1) CN1643669A (https=)
AU (1) AU2003210504A1 (https=)
WO (1) WO2003060979A2 (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007031663A (ja) * 2005-07-29 2007-02-08 Fujifilm Corp 膜形成用組成物、それを用いて形成された絶縁膜及び電子デバイス
JP2007314778A (ja) * 2006-04-26 2007-12-06 Fujifilm Corp 膜形成用組成物、該組成物を用いて形成した絶縁膜及び電子デバイス
JP2008231259A (ja) * 2007-03-20 2008-10-02 Sumitomo Bakelite Co Ltd 有機絶縁材料
EP2014636A1 (en) 2007-07-05 2009-01-14 Daicel Chemical Industries, Ltd. Ethynylphenylbiadamantane derivatives
JP2010510348A (ja) * 2006-11-17 2010-04-02 ユニバーシティ オブ マサチューセッツ ロウエル 官能性炭化水素ポリマーおよびその生成法
WO2024214530A1 (ja) * 2023-04-10 2024-10-17 株式会社レゾナック 樹脂組成物、プリプレグ、樹脂フィルム、金属張積層板、プリント配線板、半導体パッケージ、及びアセナフチレンホモポリマ
WO2025243951A1 (ja) * 2024-05-23 2025-11-27 株式会社レゾナック 硬化性組成物、プリプレグ、樹脂フィルム、金属張積層板、プリント配線板、半導体パッケージ及びアセナフチレンポリマ

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4878779B2 (ja) 2004-06-10 2012-02-15 富士フイルム株式会社 膜形成用組成物、絶縁膜及び電子デバイス
US7491658B2 (en) * 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US7531209B2 (en) 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
JP4659486B2 (ja) * 2005-03-01 2011-03-30 富士フイルム株式会社 電子デバイス用絶縁膜、電子デバイス及び電子デバイス用絶縁膜の製造方法
JP2006257212A (ja) * 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd 膜形成用組成物、それを用いた絶縁膜および電子デバイス
US7875315B2 (en) 2006-05-31 2011-01-25 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
US7790234B2 (en) 2006-05-31 2010-09-07 Michael Raymond Ayers Low dielectric constant materials prepared from soluble fullerene clusters
US7919188B2 (en) 2006-05-31 2011-04-05 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
US7883742B2 (en) 2006-05-31 2011-02-08 Roskilde Semiconductor Llc Porous materials derived from polymer composites
GB2451865A (en) 2007-08-15 2009-02-18 Univ Liverpool Microporous polymers from alkynyl monomers
KR20230070475A (ko) * 2020-09-21 2023-05-23 쓰리엠 이노베이티브 프로퍼티즈 캄파니 과분지형 중합체, 제조 방법, 및 이를 포함하는 경화성 조성물
US12500080B2 (en) * 2022-08-26 2025-12-16 Applied Materials, Inc. Systems and methods for depositing low-K dielectric films

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340557A (ja) * 1999-05-28 2000-12-08 Fujitsu Ltd 絶縁膜形成材料、絶縁膜形成方法及び半導体装置
WO2001078110A2 (en) * 2000-04-07 2001-10-18 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
JP2001294623A (ja) * 2000-04-11 2001-10-23 Nippon Steel Chem Co Ltd 芳香族オリゴマー、それを配合したフェノール樹脂組成物並びにエポキシ樹脂組成物およびその硬化物
JP2002284997A (ja) * 2000-10-10 2002-10-03 Shipley Co Llc 多孔性有機ポリシリカ誘電体形成用の組成物
JP2003131001A (ja) * 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
JP2003141956A (ja) * 2001-05-23 2003-05-16 Shipley Co Llc 多孔性物質
JP2005529983A (ja) * 2002-01-15 2005-10-06 ハネウェル・インターナショナル・インコーポレーテッド 有機組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3415741B2 (ja) * 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
WO2000031183A1 (en) * 1998-11-24 2000-06-02 The Dow Chemical Company A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
JP2001192539A (ja) * 2000-01-13 2001-07-17 Jsr Corp 熱硬化性樹脂組成物、その硬化物およびその硬化物を含む回路基板
JP2002003683A (ja) * 2000-06-26 2002-01-09 Hitachi Chem Co Ltd 低吸湿低複屈折樹脂組成物、これから得られる成形材、シート又はフィルムおよび光学用部品

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000340557A (ja) * 1999-05-28 2000-12-08 Fujitsu Ltd 絶縁膜形成材料、絶縁膜形成方法及び半導体装置
WO2001078110A2 (en) * 2000-04-07 2001-10-18 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
JP2001294623A (ja) * 2000-04-11 2001-10-23 Nippon Steel Chem Co Ltd 芳香族オリゴマー、それを配合したフェノール樹脂組成物並びにエポキシ樹脂組成物およびその硬化物
JP2002284997A (ja) * 2000-10-10 2002-10-03 Shipley Co Llc 多孔性有機ポリシリカ誘電体形成用の組成物
JP2003141956A (ja) * 2001-05-23 2003-05-16 Shipley Co Llc 多孔性物質
JP2003131001A (ja) * 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
JP2005529983A (ja) * 2002-01-15 2005-10-06 ハネウェル・インターナショナル・インコーポレーテッド 有機組成物

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007031663A (ja) * 2005-07-29 2007-02-08 Fujifilm Corp 膜形成用組成物、それを用いて形成された絶縁膜及び電子デバイス
JP2007314778A (ja) * 2006-04-26 2007-12-06 Fujifilm Corp 膜形成用組成物、該組成物を用いて形成した絶縁膜及び電子デバイス
JP2010510348A (ja) * 2006-11-17 2010-04-02 ユニバーシティ オブ マサチューセッツ ロウエル 官能性炭化水素ポリマーおよびその生成法
JP2008231259A (ja) * 2007-03-20 2008-10-02 Sumitomo Bakelite Co Ltd 有機絶縁材料
EP2014636A1 (en) 2007-07-05 2009-01-14 Daicel Chemical Industries, Ltd. Ethynylphenylbiadamantane derivatives
WO2024214530A1 (ja) * 2023-04-10 2024-10-17 株式会社レゾナック 樹脂組成物、プリプレグ、樹脂フィルム、金属張積層板、プリント配線板、半導体パッケージ、及びアセナフチレンホモポリマ
WO2025243951A1 (ja) * 2024-05-23 2025-11-27 株式会社レゾナック 硬化性組成物、プリプレグ、樹脂フィルム、金属張積層板、プリント配線板、半導体パッケージ及びアセナフチレンポリマ

Also Published As

Publication number Publication date
KR20040104454A (ko) 2004-12-10
EP1466356A2 (en) 2004-10-13
AU2003210504A8 (en) 2003-07-30
WO2003060979A3 (en) 2004-07-15
WO2003060979A2 (en) 2003-07-24
AU2003210504A1 (en) 2003-07-30
CN1643669A (zh) 2005-07-20

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