KR20040104454A - 유기 조성물 - Google Patents

유기 조성물 Download PDF

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Publication number
KR20040104454A
KR20040104454A KR10-2004-7010994A KR20047010994A KR20040104454A KR 20040104454 A KR20040104454 A KR 20040104454A KR 20047010994 A KR20047010994 A KR 20047010994A KR 20040104454 A KR20040104454 A KR 20040104454A
Authority
KR
South Korea
Prior art keywords
formula
composition
aryl
porogen
vinyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2004-7010994A
Other languages
English (en)
Korean (ko)
Inventor
리찬-엔
제레빈러슬란
슬레이만나스린
제브레브란아마우엘
나만아나스
시코니아존쥐.
라우크레이슬러
아펜폴쥐.
코로레브보리스
이와모토낸씨
Original Assignee
허니웰 인터내셔널 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/158,513 external-priority patent/US7141188B2/en
Application filed by 허니웰 인터내셔널 인코포레이티드 filed Critical 허니웰 인터내셔널 인코포레이티드
Publication of KR20040104454A publication Critical patent/KR20040104454A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Insulating Materials (AREA)
KR10-2004-7010994A 2002-01-15 2003-01-14 유기 조성물 Withdrawn KR20040104454A (ko)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
US35018702P 2002-01-15 2002-01-15
US60/350,187 2002-01-15
US35055702P 2002-01-22 2002-01-22
US60/350,557 2002-01-22
US35301102P 2002-01-30 2002-01-30
US60/353,011 2002-01-30
US37621902P 2002-04-29 2002-04-29
US60/376,219 2002-04-29
US37842402P 2002-05-07 2002-05-07
US60/378,424 2002-05-07
US10/158,513 2002-05-30
US10/158,513 US7141188B2 (en) 2001-05-30 2002-05-30 Organic compositions
PCT/US2003/000948 WO2003060979A2 (en) 2002-01-15 2003-01-14 Organic compositions for low dielectric constant materials

Publications (1)

Publication Number Publication Date
KR20040104454A true KR20040104454A (ko) 2004-12-10

Family

ID=27558468

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7010994A Withdrawn KR20040104454A (ko) 2002-01-15 2003-01-14 유기 조성물

Country Status (6)

Country Link
EP (1) EP1466356A2 (https=)
JP (1) JP2005516382A (https=)
KR (1) KR20040104454A (https=)
CN (1) CN1643669A (https=)
AU (1) AU2003210504A1 (https=)
WO (1) WO2003060979A2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4878779B2 (ja) 2004-06-10 2012-02-15 富士フイルム株式会社 膜形成用組成物、絶縁膜及び電子デバイス
US7491658B2 (en) * 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US7531209B2 (en) 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
JP4659486B2 (ja) * 2005-03-01 2011-03-30 富士フイルム株式会社 電子デバイス用絶縁膜、電子デバイス及び電子デバイス用絶縁膜の製造方法
JP2006257212A (ja) * 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd 膜形成用組成物、それを用いた絶縁膜および電子デバイス
JP2007031663A (ja) * 2005-07-29 2007-02-08 Fujifilm Corp 膜形成用組成物、それを用いて形成された絶縁膜及び電子デバイス
JP2007314778A (ja) * 2006-04-26 2007-12-06 Fujifilm Corp 膜形成用組成物、該組成物を用いて形成した絶縁膜及び電子デバイス
US7875315B2 (en) 2006-05-31 2011-01-25 Roskilde Semiconductor Llc Porous inorganic solids for use as low dielectric constant materials
US7790234B2 (en) 2006-05-31 2010-09-07 Michael Raymond Ayers Low dielectric constant materials prepared from soluble fullerene clusters
US7919188B2 (en) 2006-05-31 2011-04-05 Roskilde Semiconductor Llc Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials
US7883742B2 (en) 2006-05-31 2011-02-08 Roskilde Semiconductor Llc Porous materials derived from polymer composites
JP2010510348A (ja) * 2006-11-17 2010-04-02 ユニバーシティ オブ マサチューセッツ ロウエル 官能性炭化水素ポリマーおよびその生成法
JP2008231259A (ja) * 2007-03-20 2008-10-02 Sumitomo Bakelite Co Ltd 有機絶縁材料
JP2009013116A (ja) 2007-07-05 2009-01-22 Daicel Chem Ind Ltd エチニルフェニルビアダマンタン誘導体
GB2451865A (en) 2007-08-15 2009-02-18 Univ Liverpool Microporous polymers from alkynyl monomers
KR20230070475A (ko) * 2020-09-21 2023-05-23 쓰리엠 이노베이티브 프로퍼티즈 캄파니 과분지형 중합체, 제조 방법, 및 이를 포함하는 경화성 조성물
US12500080B2 (en) * 2022-08-26 2025-12-16 Applied Materials, Inc. Systems and methods for depositing low-K dielectric films
JPWO2024214530A1 (https=) * 2023-04-10 2024-10-17
WO2025243951A1 (ja) * 2024-05-23 2025-11-27 株式会社レゾナック 硬化性組成物、プリプレグ、樹脂フィルム、金属張積層板、プリント配線板、半導体パッケージ及びアセナフチレンポリマ

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3415741B2 (ja) * 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
WO2000031183A1 (en) * 1998-11-24 2000-06-02 The Dow Chemical Company A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
JP3483500B2 (ja) * 1999-05-28 2004-01-06 富士通株式会社 絶縁膜形成材料、絶縁膜形成方法及び半導体装置
JP2001192539A (ja) * 2000-01-13 2001-07-17 Jsr Corp 熱硬化性樹脂組成物、その硬化物およびその硬化物を含む回路基板
US6509415B1 (en) * 2000-04-07 2003-01-21 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
JP4651774B2 (ja) * 2000-04-11 2011-03-16 新日鐵化学株式会社 芳香族オリゴマー、それを配合したフェノール樹脂組成物並びにエポキシ樹脂組成物およびその硬化物
JP2002003683A (ja) * 2000-06-26 2002-01-09 Hitachi Chem Co Ltd 低吸湿低複屈折樹脂組成物、これから得られる成形材、シート又はフィルムおよび光学用部品
TW588072B (en) * 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
US20030006477A1 (en) * 2001-05-23 2003-01-09 Shipley Company, L.L.C. Porous materials
JP2003131001A (ja) * 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
US7049005B2 (en) * 2001-05-30 2006-05-23 Honeywell International Inc. Organic compositions

Also Published As

Publication number Publication date
EP1466356A2 (en) 2004-10-13
AU2003210504A8 (en) 2003-07-30
WO2003060979A3 (en) 2004-07-15
WO2003060979A2 (en) 2003-07-24
AU2003210504A1 (en) 2003-07-30
JP2005516382A (ja) 2005-06-02
CN1643669A (zh) 2005-07-20

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St.27 status event code: A-2-2-P10-P11-nap-X000

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