TW200408662A - Organic compositions - Google Patents

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Publication number
TW200408662A
TW200408662A TW091136523A TW91136523A TW200408662A TW 200408662 A TW200408662 A TW 200408662A TW 091136523 A TW091136523 A TW 091136523A TW 91136523 A TW91136523 A TW 91136523A TW 200408662 A TW200408662 A TW 200408662A
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Taiwan
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group
aryl
unsaturated
phenylethynyl
composition
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TW091136523A
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Chinese (zh)
Inventor
Paul Apen
Boris Korolev
Kreisler Lau
Bo Li
Nancy Iwamoto
Bedwell William
Ruslan Zherebin
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Honeywell Int Inc
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Priority claimed from PCT/US2001/050182 external-priority patent/WO2003057749A1/en
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of TW200408662A publication Critical patent/TW200408662A/en

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Abstract

The present composition provides a composition comprising: (a) thermosetting component wherein the thermosetting component comprises monomer having the structure, dimer having the structure, or a mixture of the monomer and the dimer wherein Y is selected from cage compound and silicon atom; R1, R2, R3, R4, R5, and R6 are independently selected from aryl, branched aryl, and arylene ether; at least one of the aryl, the branched aryl, and the arylene ether has an ethynyl group; R7 is aryl or substituted aryl; and at least one of the R1, R2, R3, R4, R5, and R6 comprises at least two isomers; and (b) adhesion promoter comprising compound having at least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with a substrate when the composition is applied to a substrate. The present composition is particularly useful as a dielectric material in microelectronic applications.

Description

200408662 ⑴ 先前技術、内容、實施方式及圖式簡單說明) 看弋曼明赛瘦… (#明ϊϋϊ9月了 Ϊ明所屬之技術領域 發明範轉 本發明係關於半導體裝置,特別是關於具有有機低介電 常數材料的半導體裝置及其製造方法。 發明背景 為了增加半導體裝置的性能與速度,半導體裝置製造廠 商尋求減少互連物的行距與空間,同時使傳輸損失減至最 少並減少互連物的電容耦合。消除電力損耗與減少電容之 一種方式為減少分離互連物的絕緣材料或介電質的介電 常數(亦稱為”k’’)。具有低介電常數的絕緣材料尤其適 合,因為其通常容許較快信號傳播、減少電容及導體線路 間之串音以及降低驅動積體電路所需的電壓。 因為空氣具有介電常數為1.0,所以主要目標將降低絕 緣體材料的介電常數至理論限度為1.0,而降低絕緣材料 的介電常數的若干方法為此技藝中已知。此等技術包括加 入元素如氟至組合物以降低散裝材料的介電常數。降低k 的其他方法包括使用替代性介電材料基質。 因此,隨著互連物行距減少,需要絕緣體材料的介電常 數的相伴減少以達成未來半導體裝置的改良性能與速 度。例如,具有互連物行距為0.13或0.10微米及以下的裝 置尋求具有介電常數(k) <3的絕緣材料。 目前使用二氧化矽(Si〇2)與5彳〇2的變體如氟化二氧化矽 或氟化矽玻璃(以下稱為FSG)。此等具有介電常數為約 3.5-4.0的二氧化物普遍用作半導體裝置的介電質。雖然 200408662 (2) 51〇2與FSG具有對抗半導體裝置製造的熱循環與加工步騾 所需的機械與熱穩定性,但工業上希望具有較低介電常數 的材料。 、 用以沉積介電材料的方法可分成二類:旋壓沉積(以下 > 稱為SOD)與化學氣相沉積(以下稱為CVD)。發展較低介電 常數的若干努力包括改變化學組合物(有機、無機或有機 與無機的摻合物)或改變介電基質(多孔、無孔)。表1概示 若干具有介電常數為2.0至3.5的材料。(PE=增強的電漿; HDP=高密度電漿)。然而,表1所示公告案揭示的介電材料 ® 與基質卻無法顯示有效介電材料適當甚至所需的組合物 理與化學特性,例如,較高機械穩定性、高熱穩定性、高 玻璃轉化溫度、高模數或硬度,同時仍會被溶合、旋壓或 沉積在基材、晶圓或其他表面上。因此,可研究其他用作 介電材料與層的化合物與材料,即使此等化合物或材料目 前不會視為其呈現形式的介電材料亦然。200408662 先前 Brief description of the previous technology, content, implementation and drawings) (弋 明 ϊϋϊ9月了 Ϊ 明 的 所属 的 技术 领域 范发明 转 发明 的 This invention relates to semiconductor devices, and in particular, to having organic low Semiconductor devices with dielectric constant materials and methods of manufacturing the same. BACKGROUND OF THE INVENTION In order to increase the performance and speed of semiconductor devices, semiconductor device manufacturers seek to reduce the spacing and space of interconnects, while minimizing transmission losses and reducing the cost of interconnects. Capacitive coupling. One way to eliminate power loss and reduce capacitance is to reduce the dielectric constant (also known as "k") of the insulating material or dielectric of the discrete interconnect. Insulating materials with low dielectric constant are particularly suitable, Because it generally allows faster signal propagation, reduces crosstalk between capacitors and conductor lines, and reduces the voltage required to drive integrated circuits. Because air has a dielectric constant of 1.0, the main goal is to reduce the dielectric constant of the insulator material to The theoretical limit is 1.0, and several methods of reducing the dielectric constant of insulating materials have been used in this art. These techniques include the addition of elements such as fluorine to the composition to reduce the dielectric constant of bulk materials. Other methods of reducing k include the use of alternative dielectric material matrices. Therefore, as interconnect spacing decreases, the need for insulator materials The concomitant reduction of the dielectric constant to achieve improved performance and speed of future semiconductor devices. For example, devices with interconnect pitches of 0.13 or 0.10 microns and below seek insulation materials with a dielectric constant (k) < 3. Currently used Variations of silicon dioxide (SiO2) and 5.02 such as fluorinated silicon dioxide or fluorinated silica glass (hereinafter referred to as FSG). These dioxides with a dielectric constant of about 3.5-4.0 are common Used as a dielectric for semiconductor devices. Although 200408662 (2) 51〇2 and FSG have the mechanical and thermal stability required to resist the thermal cycling and processing steps of semiconductor device manufacturing, the industry desires a lower dielectric constant The methods used to deposit dielectric materials can be divided into two categories: spin-on deposition (hereinafter referred to as > SOD) and chemical vapor deposition (hereinafter referred to as CVD). Several methods of developing lower dielectric constants This includes changing the chemical composition (organic, inorganic or blend of organic and inorganic) or changing the dielectric matrix (porous, non-porous). Table 1 outlines several materials with a dielectric constant of 2.0 to 3.5. (PE = reinforced HDP = High Density Plasma). However, the dielectric materials® and substrates disclosed in the bulletin shown in Table 1 cannot show the proper or even required combination of physical and chemical properties of effective dielectric materials, such as higher Mechanical stability, high thermal stability, high glass transition temperature, high modulus or hardness, while still being fused, spun or deposited on substrates, wafers or other surfaces. Therefore, other uses for dielectrics can be investigated Compounds and materials of materials and layers, even if such compounds or materials are not currently considered to be dielectric materials in their present form.

200408662 (3)200408662 (3)

表1 材料 沉積法 介電常數(k) 參考文件 氟化氧化I夕 (SiOF) PE-CVD; HDP-CVD 3.3-3.5 美國專利6,278,174 氫矽倍半氧烷 (HSQ) SOD 2.0-2.5 美國專利4,756,977;5,370,903;及 5,486,564;國際專利公告案W〇 00/40637; E.S. Moyer et al.,"超低k 石夕倍半氧燒基底樹脂”,Concepts and Needs for Low Dielectric Constant <0.15 μιη Interconnect Materials: Now and the Next Millennium, Sponsored by the American Chemical Society, pages 128-146 (November 14-17, 1999) 甲基矽倍半氧烷 (MSQ) SOD 2.4-2.7 美國專利6,143,855 聚有機碎 SOD 2.5-2.6 美國專利6,225,23 8 氟化非晶碳 (a-C:F) HDP-CVD 2.3 .美國專利5,900,290 苯并環丁烯 (BCB) SOD 2,4-2.7 美國專利5,225,586 聚伸芳醚 (PAE) SOD 2.4 美國專利5,986,045;5,874,516;及 5,658,994 聚對二甲笨 (N 及 F) CVD 2.4 美國專利5,268,202 聚伸笨 SOD 2.6 美國專利 5,965,679&6,288,188B1; 及Waeterloos et al.,”多孔絲半導體 介電質之整合可行性' Proc. Ofthe 2001 International Interconnect Tech. Conf.,pp. 253-254 (2001). 然而,許多發展中具有介電常數為2.0與3.5間之有機S〇DTable 1 Dielectric constant of material deposition method (k) Reference document Fluorination and Oxidation (SiOF) PE-CVD; HDP-CVD 3.3-3.5 US Patent 6,278,174 Hydrogen Silsesquioxane (HSQ) SOD 2.0-2.5 United States Patents 4,756,977; 5,370,903; and 5,486,564; International Patent Publication WO00 / 40637; ES Moyer et al., &Quot; Ultra-low-k Shixii semi-oxygen fired base resin ", Concepts and Needs for Low Dielectric Constant < 0.15 μιη Interconnect Materials: Now and the Next Millennium, Sponsored by the American Chemical Society, pages 128-146 (November 14-17, 1999) Methylsilsesquioxane (MSQ) SOD 2.4-2.7 U.S. Patent 6,143,855 Polyorganic Fragments SOD 2.5-2.6 U.S. patent 6,225,23 8 Fluorinated amorphous carbon (aC: F) HDP-CVD 2.3. U.S. patent 5,900,290 Benzocyclobutene (BCB) SOD 2,4-2.7 U.S. patent 5,225,586 Polyarylene ether ( PAE) SOD 2.4 U.S. Patent Nos. 5,986,045; 5,874,516; and 5,658,994 Parylene (N and F) CVD 2.4 U.S. Patent No. 5,268,202 SOD 2.6 U.S. Patent No. 5,965,679 &6,288,188B1; Integration of semiconductor dielectrics Feasibility 'Proc. Ofthe 2001 International Interconnect Tech. Conf., Pp. 253-254 (2001). However, in many developing S〇D an organic dielectric constant of 2.0 and 3.5

系統根據上述機械與熱特性具有某些缺點;因此,在工業 上需要發展在此介電常數範圍内的介電薄膜的改良加工 與性能。 -10- 200408662 (4)The system has certain disadvantages based on the above-mentioned mechanical and thermal characteristics; therefore, there is an industrial need to develop improved processing and performance of dielectric films in this range of dielectric constants. -10- 200408662 (4)

Reichert與Mathias說明化合物與單禮,其包含金剛分 子,其為籠基底分子之類型且教示為可用作菱形基材。 (Polym, Prepr. (Am. Chem. Soc., Div. Polym. Chem.), 1993, Vol. 34 (1), pp. 495-6; Polym,Prepr. (Am· Chem· Soc·,Div· Polym· Chem·), 1992, Vol· 33 (2),pp· 144-5; Chem. Mater., 1993, Vol. 5 (1),pp· 4-5; Macromolecules, 1994, Vol. 27 (24), pp. 7030-7034;Reichert and Mathias illustrate compounds and ceremonies, which include diamond molecules, which are types of cage-based molecules and are taught to be useful as diamond substrates. (Polym, Prepr. (Am. Chem. Soc., Div. Polym. Chem.), 1993, Vol. 34 (1), pp. 495-6; Polym, Prepr. (Am · Chem · Soc ·, Div · Polym. Chem.), 1992, Vol. 33 (2), pp. 144-5; Chem. Mater., 1993, Vol. 5 (1), pp. 4-5; Macromolecules, 1994, Vol. 27 (24 ), pp. 7030-7034;

Macromolecules, 1994, Vol. 27 (24), pp. 7015-7023; Polym, Prepr. (Am. Chem. Soc·, Div. Polym· Chem·),1995,Vol. 36 (1),pp· 741-742; 205th ACS National Meeting, Conference Program, 1993, pp. 312; Macromolecules, 1994, Vol. 27 (24), pp. 7024-9;Macromolecules, 1994, Vol. 27 (24), pp. 7015-7023; Polym, Prepr. (Am. Chem. Soc ·, Div. Polym · Chem ·), 1995, Vol. 36 (1), pp. 741- 742; 205th ACS National Meeting, Conference Program, 1993, pp. 312; Macromolecules, 1994, Vol. 27 (24), pp. 7024-9;

Macromolecules, 1992, Vol. 25(9), pp. 2294-306; Macromolecules, 1991, Vol. 24 (18), pp. 5232-3; Veronica R. Reichert, PhDMacromolecules, 1992, Vol. 25 (9), pp. 2294-306; Macromolecules, 1991, Vol. 24 (18), pp. 5232-3; Veronica R. Reichert, PhD

Dissertation,1994,Vol· 55-06B; ACS Symp. Ser·:高性能材料之步 驟-生長聚合物,1996,Vol· 624, ρρ· 197-207; Macromolecules,2000, Vol. 33(10),pp. 3 855-3859; Polym, Prepr. (Am. Chem. Soc., Div. Polym. Chem.), 1999, Vol. 40 (2), pp. 620-62 1; Polym, Prepr. (Am. Chem. Soc·,Div. Polym. Chem·),1999,Vol. 40 (2),pp· 577-78; Macromolecules, 1997, Vol. 30 (19), pp. 5970-5975; J. Polym. Sci. Part A: Polymer Chemistry, 1997, Vol. 35 (9), pp. 1743-1751; Polym, Prepr. (Am. Chem. Soc., Div. Polym. Chem.), 1996, Vol. 37 (2), pp. 243-244; Polym, Prepr· (Am· Chem· Soc·, Div. Polym. Chem·), 1996, Vol. 37 (1), pp. 551-552; J. Polym. Sci., Part A: Polymer Chemistry, 1996,Vol. 34 (3),pp. 397-402; Polym, Prepr· (Am. Chem· Soc·,Div. Polym. Chem.),1995,Vol· 36 (2),pp· 140-141; Polym,Prepr· (Am. -11 - 200408662 (5)Dissertation, 1994, Vol. 55-06B; ACS Symp. Ser .: Steps in high-performance materials-growing polymers, 1996, Vol. 624, ρ.197-207; Macromolecules, 2000, Vol. 33 (10), pp 3 855-3859; Polym, Prepr. (Am. Chem. Soc., Div. Polym. Chem.), 1999, Vol. 40 (2), pp. 620-62 1; Polym, Prepr. (Am. Chem. Soc ·, Div. Polym. Chem ·), 1999, Vol. 40 (2), pp. 577-78; Macromolecules, 1997, Vol. 30 (19), pp. 5970-5975; J. Polym. Sci. Part A: Polymer Chemistry, 1997, Vol. 35 (9), pp. 1743-1751; Polym, Prepr. (Am. Chem. Soc., Div. Polym. Chem.), 1996, Vol. 37 (2), pp. 243-244; Polym, Prepr · (Am · Chem · Soc ·, Div. Polym. Chem ·), 1996, Vol. 37 (1), pp. 551-552; J. Polym. Sci., Part A : Polymer Chemistry, 1996, Vol. 34 (3), pp. 397-402; Polym, Prepr. (Am. Chem. Soc., Div. Polym. Chem.), 1995, Vol. 36 (2), pp. 140-141; Polym, Prepr. (Am. -11-200408662 (5)

Chem· Soc·,Div· Polym. Chem·),1992,V〇l· 33 (2),ρρ· 146-147; J·Chem. Soc., Div. Polym. Chem.), 1992, Vol. 33 (2), p. 146-147; J.

Appl· Polym. Sci·,1998, Vol. 68 (3),ρρ· 475482)。由 Reichert與Appl. Polym. Sci., 1998, Vol. 68 (3), p. 475482). Reichert and

Mathias所說明的金剛烷基底化合物與單體最好用以形成 在熱固材料的核心具有金剛燒分子的聚合物。然而,由 Reichert與Mathias研究所示的化合物由於設計選擇僅包含 一個金剛烷基底化合物的異構體。結構物A顯示此對稱性 對位異構體1,3,5,7-肆[4’-(苯基乙炔基)苯基]金剛烷:The adamantyl base compounds and monomers described by Mathias are best used to form polymers with aramid molecules at the core of thermoset materials. However, the compounds shown by the Reichert and Mathias study were designed to include isomers of only one adamantyl base compound. Structure A shows this symmetry. Para-isomer 1,3,5,7-[[4 '-(phenylethynyl) phenyl] adamantane:

結構物AStructure A

換言之,Reichert與iMathias在其各自與一起工作中認為有 用聚合物僅包含目標金剛烷基底單體的一個異構體形 式。然而,當自單一異構體形式(對稱性”全對位,,異構體) 金剛烷基底單體的1,3,5,7-肆[4·-(苯基乙炔基)苯基]金剛烷 形成並加工聚合物時’顯然有問題。根據Reichert論述(如 上)與!\1&(:1:〇111〇^(:111€5,〇1.27,(卩9.701 5-7034)(如上)’頃發現對 稱性全對位異構體1,3,5,7-肆[4^(苯基乙炔基)苯基]金剛烷 200408662 ⑹ 可在氯仿内足夠溶解,而可得1H NMR光譜。然而,頃發 現獲得解決13C NMR光譜的搜索時間不實際,指出全對位 異構ft具有低溶解度。因此,Reichert的對稱性”全對位” ' 異構體的1,3,5,7-肆[W-(苯基乙炔基)苯基]金剛烷在標準有 , 基溶劑内不溶解,因而無法使用於任何需要溶解度或溶劑 基底加工的應用如流動塗体、旋轉塗佈或浸潰塗佈。參照 以下的比較例1。 在申請人等共同讓渡的申請中專利案PCT/US 01/22204, 2001年10月17曰申請中,發現一種含有異構熱固性單體或 ® 二聚物混合物的組合物,其中混合物包含至少一個具有下 面結構物的單體或二聚物In other words, Reichert and iMathias, in their respective work together, consider useful polymers to contain only one isomer form of the target adamantyl base monomer. However, when starting from a single isomer (symmetrical, all para ,, isomer), the adamantyl base monomer is 1,3,5,7-[[·· ((phenylethynyl) phenyl]] Apparently there is a problem in the formation and processing of the adamantane polymer. According to Reichert's discussion (above) and! \ 1 & (: 1: 〇111〇 ^ (: 111 € 5, 〇1.27, (卩 9.701 5-7034) ) 'Are found that the symmetrical all para-isomer 1,3,5,7-^ [4 ^ (phenylethynyl) phenyl] adamantane 200408662 ⑹ can be sufficiently dissolved in chloroform, and 1H NMR spectrum can be obtained However, it was found that the search time to resolve the 13C NMR spectrum was not practical, indicating that the all-isomeric ft has a low solubility. Therefore, Reichert's symmetry is "all-para-" 'isomer 1,3,5,7 -The [W- (phenylethynyl) phenyl] adamantane is not soluble in standard solvents, so it cannot be used in any application that requires solubility or solvent-based processing such as flow coating, spin coating or dipping Coating. Refer to Comparative Example 1 below. In the patent application PCT / US 01/22204, jointly filed by the applicant, etc., an application was found on October 17, 2001. Compositions containing a mixture of isomeric thermosetting monomers or dimers, wherein the mixture contains at least one monomer or dimer having the following structure

Ri R4Ri R4

R2R2

其中Y係選自籠狀化合物與矽原子;Ri,R2,R3,R4,R5 修 及R6獨互選自芳基、支鍵芳基及伸芳謎;芳基、支鍵芳基 及伸芳醚中至少一個具有乙炔基;R7為芳基或經取代芳 基。申請人等亦揭示此等熱固性混合物的形成方法。此新 穎異構熱固性單體或二聚物混合物可用作微電子應用的 、 lr 介電材料並可在許多溶劑如環己烷内溶解。此等所欲特性 > 可使此異構熱固性單體或二聚物混合物適合供在厚度為 約0.1微米至約1.0微米的薄膜形成。 • 13 - 200408662Y is selected from cage compounds and silicon atoms; Ri, R2, R3, R4, R5, and R6 are independently selected from aryl, branched aryl, and aryl mystery; aryl, branched aryl, and aryl ether At least one of them has an ethynyl group; R7 is an aryl group or a substituted aryl group. Applicants and others also disclose methods for forming such thermosetting mixtures. This mixture of neomeric thermosetting monomers or dimers can be used as a dielectric material for microelectronic applications, lr dielectric materials and can be dissolved in many solvents such as cyclohexane. These desirable characteristics > can make this heterogeneous thermosetting monomer or dimer mixture suitable for film formation with a thickness of about 0.1 micrometer to about 1.0 micrometer. • 13-200408662

⑺ 雖然各種方法在降低材料的介電常數的技藝中為已 知,惟此等方法亦具有缺點。因此,在半導體工業中仍有 需要,a)提供降低介電層的介電常數的改良組合物與方 : 法;b)提供具有改良機械性如熱穩定性、玻璃轉化溫度(Tg) 及硬度的介電材料;及c)製造可溶合並旋壓成晶圓或成層 材料的熱固性化合物及介電材料。 發明概述 為了回應此技藝的需求,申請人等發展一種組合物,其 包含:(a)熱固性組份,其中熱固性組份包含具有以下結 鲁 構物的單體⑺ Although various methods are known in the art of reducing the dielectric constant of materials, these methods also have disadvantages. Therefore, there is still a need in the semiconductor industry, a) to provide improved compositions and methods for reducing the dielectric constant of the dielectric layer: method; b) to provide improved mechanical properties such as thermal stability, glass transition temperature (Tg), and hardness Dielectric materials; and c) manufacturing thermosetting compounds and dielectric materials that are soluble and spin-formed into wafers or layered materials. SUMMARY OF THE INVENTION In response to the needs of this technology, applicants and others have developed a composition comprising: (a) a thermosetting component, wherein the thermosetting component comprises a monomer having the following structure

RiRi

R2 R3 具有以下結構物的二聚物R2 R3 Dimer with the following structure

Ri R4Ri R4

R5R5

Rs R6 或單體與二聚物的混合物,其中γ係選自籠狀化合物與矽 原子;Ri,R2,R3,R4,R5及尺6獨立選自芳基、支鏈芳基 及神芳與;芳基、支錢芳基及伸芳謎中至少一個具有乙块: -14- 200408662 ⑻ 基;117為芳基或經取代芳基;及R!,R2,R3,R4,R5及R6 中至少一個包含至少二個異構體;及(b)黏著促進劑,包 含具有至少雙官能度之化合物,其中雙官能度可相同或不 同,第一官能度可與熱固性組份(a)交互作用而當組合物 塗敷至基材時,第二官能度可與基材交互作用。 較佳的是,黏著促進劑係選自以下所組成之群: (i) 式(I)的聚碳矽烷: ΗISi- R9Rs R6 or a mixture of monomers and dimers, wherein γ is selected from cage compounds and silicon atoms; Ri, R2, R3, R4, R5 and R6 are independently selected from aryl, branched aryl, and Shenfang and ; At least one of the aryl group, pendant aryl group, and fangfang mystery has ethyl block: -14-200408662 fluorenyl group; 117 is aryl group or substituted aryl group; and R! At least one containing at least two isomers; and (b) an adhesion promoter comprising a compound having at least difunctionality, wherein the difunctionality may be the same or different, and the first functionality may interact with the thermosetting component (a) When the composition is applied to a substrate, the second functionality can interact with the substrate. Preferably, the adhesion promoter is selected from the group consisting of: (i) polycarbosilane of formula (I): ΗISi- R9

Rs-Rs-

Rio-Si—Rio-Si—

Rn r12•Si—R24- 〇~^13 a bRn r12 • Si—R24- 〇 ~ ^ 13 a b

Rl5Si —R17—I Rl6 其中R8,R14及R 17各獨立代表經取代或未經取代伸烷基、 環伸烷基、伸乙烯基、伸烯丙基或伸芳基;R9,Rio,Rh, R12,Rl5及R16各獨立代表氫原子、烷基、伸烷基、乙烯基、 環烷基、烯丙基、芳基或伸芳基並可為直鏈或支鏈;R π 代表有機碎、碎燒基、碎氧基或有機基;及a,b,c與d符 合[4Sa+b+c+dS100,000]的條件,及b與c與d可共同或獨立為 零; (ii)式(RtOKRehSKRuhiRnh的矽烷,其中 R18,R19,R20 及R21各獨立代表氫、羥基、不飽和或飽和烷基、經 取代或未經取代伸烷基,其中取代基為胺基或環氧 基,不飽和或飽和燒氧基、不飽和或飽和複酸基或芳 -15- 200408662 (9) 基;及Rl8,R19,R2〇及R21中至少二個代表氫、羥基、 飽和或不飽和烷氧基、不飽和烷基或不飽和羧酸基; 及 f+g+h+i<4 ; · (iii)下式的苯酚-甲醛樹月旨或低聚物-[Ι122〔:6Η2(〇Η)(Ι123)]』·-, 其中R22為經取代或未經取代伸烷基、環伸烷基、乙晞 基、烯丙基或芳基;R23為烷基、伸烷基、伸乙烯基、 環伸烷基、伸烯丙基或芳基;及j = 3-100 ; (i v)縮水甘油链;Rl5Si —R17—I Rl6 wherein R8, R14, and R 17 each independently represent a substituted or unsubstituted alkylene, cycloalkylene, vinylidene, allyl, or arylene; R9, Rio, Rh, R12, R15, and R16 each independently represent a hydrogen atom, an alkyl group, an alkylene group, a vinyl group, a cycloalkyl group, an allyl group, an aryl group, or an arylene group and may be a straight chain or a branched chain; R π represents an organic fragment, Crushed alkoxy group, crushed oxy group or organic group; and a, b, c and d meet the conditions of [4Sa + b + c + dS100,000], and b and c and d may be zero together or independently; (ii) Formula (RtOKRehSKRuhiRnh silane, where R18, R19, R20 and R21 each independently represent hydrogen, hydroxyl, unsaturated or saturated alkyl, substituted or unsubstituted alkylene, wherein the substituent is amine or epoxy, not A saturated or saturated alkoxy group, an unsaturated or saturated polyacid group, or an aryl-15-200408662 (9) group; and at least two of R18, R19, R20, and R21 represent hydrogen, a hydroxyl group, a saturated or unsaturated alkoxy group , Unsaturated alkyl or unsaturated carboxylic acid groups; and f + g + h + i <4; (iii) a phenol-formaldehyde tree moth or oligomer of the formula-[Ι122 [: 6Η2 (〇Η) (I123)] ''- Where R22 is substituted or unsubstituted alkylene, cycloalkylene, ethenyl, allyl or aryl; R23 is alkyl, alkylene, vinylene, cycloalkylene, allylene Or aryl; and j = 3-100; (iv) a glycidyl chain;

(v) 含有至少一個羧酸基的不飽和羧酸的酯;及 I (v i)乙烯基環狀低聚物或聚合物,其中環狀基為吡啶、芳 烴或雜芳烴。 申請人等亦發展一種改良對基材黏著的方法,包括之步 驟為: 塗敷組合物層至基材,組合物層包含: (a) 熱固性組份,其中熱固性組份包含具有以下結構物的 單體(v) an ester of an unsaturated carboxylic acid containing at least one carboxylic acid group; and (i) a vinyl cyclic oligomer or polymer, wherein the cyclic group is pyridine, an aromatic hydrocarbon, or a heteroaromatic hydrocarbon. The applicant and the like have also developed a method for improving adhesion to a substrate, comprising the steps of: applying a composition layer to the substrate, the composition layer comprising: (a) a thermosetting component, wherein the thermosetting component includes a monomer

Ri r4Ri r4

R2 —R3 具有以下結構物的二聚物 •16- 200408662 (ίο)R2 —R3 Dimer with the following structure • 16- 200408662 (ίο)

Rl R4Rl R4

Ri .,、、f R3 JYllUlUntn“·. R5 R6 或單體與二聚物的混合物,其中Y係選自籠狀化合物與矽 原子;Rl,R2,R3,R4,115及R6獨立選自芳基、支鏈芳基 及伸芳醚;芳基、支鏈芳基及伸芳醚中至少一個具有乙炔 基;117為芳基或經取代芳基;及Ri,R2,R3,R4,R5及R6 中至少一個包含至少二個異構體;及 (b) 黏著促進劑,包含具有至少雙官能度之化合物,其中 雙官能度可相同或不同,第一官能度可與熱固性組份 (a)交互作用而第二官能度可與基材交互作用。 此外,申請人等亦發展一種组合物,其包含:(a)具有 以下結構物的熱固性單體Ri. ,, f R3 JYllUlUntn "·. R5 R6 or a mixture of monomers and dimers, wherein Y is selected from cage compounds and silicon atoms; R1, R2, R3, R4, 115 and R6 are independently selected from aromatic At least one of aryl, branched-chain aryl, and arylene ether has ethynyl; 117 is aryl or substituted aryl; and Ri, R2, R3, R4, R5, and At least one of R6 contains at least two isomers; and (b) an adhesion promoter comprising a compound having at least difunctionality, wherein the difunctionality may be the same or different, and the first functionality may be the same as the thermosetting component (a) The second functionality can interact with the substrate. In addition, the applicant and the like have also developed a composition comprising: (a) a thermosetting monomer having the following structure

Ar、 R,44 R,3 其中Αγ為芳基;Rf丨,R’2,ΙΓ3,R、,R、及11’6獨立選自芳基、 支鏈芳基及伸芳醚,且無取代;及其中芳基、支鏈芳基及 伸芳醚各具有至少一個乙炔基;及(b)黏著促進劑,包含 具有至少雙官能度之化合物,其中雙官能度可相同或不 同,第.一官能度可與熱固性組份(a)交互作用而當組合物 -17· 200408662 ⑼ 塗敷至基材時,第二官能度可與基材交互作周。黏著促進 劑(b)較佳選自(i)聚碳矽烷,(ii)矽烷,(iii)苯酚-甲醛樹脂 或低聚物,(iv)縮水甘油链,(v)不飽和幾酸§旨或(vi)上述 乙晞基環狀低聚物或聚合物。 此外,申請人等亦發展一種製造低介電常數聚合物前軀 體或低聚物的方法,包括之步驟為: (1)提供一種組合物,其包含:(a)熱固性組份,其中熱固 性組份包含具有以下結構物的單體Ar, R, 44 R, 3 where Aγ is aryl; Rf 丨, R'2, IΓ3, R, R, and 11'6 are independently selected from aryl, branched aryl, and arylene ether, and are unsubstituted ; And aryl, branched-chain aryl, and arylene ether each having at least one ethynyl group; and (b) an adhesion promoter comprising a compound having at least difunctionality, wherein the difunctionality may be the same or different, first. The functionality can interact with the thermosetting component (a) and when Composition-17 · 200408662 ⑼ is applied to a substrate, the second functionality can interact with the substrate. The adhesion promoter (b) is preferably selected from (i) polycarbosilane, (ii) silane, (iii) phenol-formaldehyde resin or oligomer, (iv) glycidol chain, (v) unsaturated polyacid Or (vi) the acetamidinyl cyclic oligomer or polymer. In addition, applicants and others have also developed a method for manufacturing a low-dielectric-constant polymer precursor or oligomer, comprising the steps of: (1) providing a composition comprising: (a) a thermosetting component, wherein the thermosetting component Contains monomers having the following structures

Ri r4Ri r4

R2 R3 具有以下結構物的二聚物R2 R3 Dimer with the following structure

Rl R4Rl R4

R2·R2 ·

R3 丨丨丨川丨丨 R5 或單體與二聚物的混合物,其中γ係選自籠狀化合物與矽 原子;Rl,R2,R3,R4,R5及R6獨立選自芳基、支鏈芳基 及伸芳醚;芳基、支鏈芳基及伸芳醚中至少一個具有乙炔 基;R7為芳基或經取代芳基;及Ri,R2,R3,尺4,R5及R6 中至少一個包含至少二個異構體;及(b)黏著促進劑,包 -18 - 200408662R3 丨 丨 chuan 丨 丨 R5 or a mixture of monomers and dimers, where γ is selected from cage compounds and silicon atoms; R1, R2, R3, R4, R5 and R6 are independently selected from aryl, branched aromatic And aryl ether; at least one of aryl, branched aryl and aryl ether has ethynyl; R7 is aryl or substituted aryl; and at least one of Ri, R2, R3, chi 4, R5, and R6 Contains at least two isomers; and (b) an adhesion promoter, package-18-200408662

(12) 含具有至少雙官能度之化合物,其中雙官能度可相同或不 同,第一官能度可與熱固性組份(a)交互作用而當組合物 塗敷至基材時,第二官能度可與基材交互作用;及 : (2)在溫度為約30°C至約350°C下處理組合物約0.5至約60小 , 時,藉以形成該低介電常數聚合物前軀體。黏著促進劑(b) 較佳選自(i)聚碳矽烷,(ii)矽烷,(iii)苯酚-甲醛樹脂或低 聚物,(iv)縮水甘油醚,(v)不飽和羧酸酯或(vi)上述乙烯 基環狀低聚物或聚合物。 此外,申請人等亦發展一種製造低介電常數聚合物的方 ® 法,包括之步騾為: (1)提供一種低聚物,其包含(a)熱固性組份,其中熱固性 組份包含具有以下結構物的單體(12) Contains a compound having at least difunctionality, wherein the difunctionality may be the same or different, the first functionality may interact with the thermosetting component (a) and when the composition is applied to a substrate, the second functionality It can interact with the substrate; and: (2) treating the composition at a temperature of about 30 ° C to about 350 ° C for about 0.5 to about 60 hours to form the low dielectric constant polymer precursor. The adhesion promoter (b) is preferably selected from (i) polycarbosilane, (ii) silane, (iii) phenol-formaldehyde resin or oligomer, (iv) glycidyl ether, (v) unsaturated carboxylic acid ester or (Vi) The above-mentioned vinyl cyclic oligomer or polymer. In addition, applicants and others have also developed a method for manufacturing a low dielectric constant polymer, which includes the following steps: (1) providing an oligomer comprising (a) a thermosetting component, wherein the thermosetting component includes Monomers of the following structures

RiRi

具有以下結構物的二聚物Dimer with the following structure

Ri r4 或單體與二聚物的混合物,其中Y係選自籠狀化合物與矽 -19- 200408662 (13) 原子;Ri,R2,R3,R4,R5及R6獨立選自芳基、支鏈芳基 及伸芳醚;芳基、支鏈芳基及伸芳醚中至少一個具有乙炔 基;117為芳基或經取代芳基;及Ri,R2,R3,R4,R5及R6 : 中至少一個包含至少二個異構體;及(b)黏著促進劑,包 -· 含具有至少雙官能度之化合物,其中雙官能度可相同或不 同,第一官能度可與熱固性組份(a)交互作用而當組合物 塗敷至基材時,第二官能度可與基材交互作用;及 (2)聚合低聚物,藉以形成低介電常數聚合物,其中聚合 作用包括乙炔基的化學反應。黏著促進劑(b)較佳選自(i) ® 聚碳矽烷,(ii)矽烷,(iii)苯酚-甲醛樹脂或低聚物,(iv) 縮水甘油酸,(v)不飽和致酸醋或(vi)上述乙晞基環狀低聚 物或聚合物。 此外,申請人等亦發展一種旋壓低.介電常數材料,其包 含:(a)具有第一芳烴部分及第一反應性基團的第一主鏈 與具有第二芳烴部分及第二反應性基團的第二主鏈,其中 第一與第二主鏈在交聯反應中藉由第一與第二反應性基 團交聯,而籠狀結構物物共價地鍵結至第一與第二主鏈中 ® 至少一個,其中籠狀結構物物包含至少8個原子;(b)黏著 促進劑,包含具有至少雙官能度之化合物,其中雙官能度 可相同或不同,第一官能度可與第一與第二主鏈交互作用 而當材料塗敷至基材時,篥二官能度可與基材交互作用。 . β- 黏著促進劑(b)較佳選自(i)聚碳矽烷,(Π)矽烷,(iii)苯酚- w 甲醛樹脂或低聚物,(iv)縮水甘油醚,(v)不飽和羧酸酯或 _ (vi)上述乙烯基環狀低聚物或聚合物。 -20- 200408662 (14) 本發明之各種目的、特性、態樣及優點由以下本發明較 佳具體例的細節說明連同附圖當可更加明白。 附圖簡單說明 表1顯示若干對低介電材料的代表性教示。 圖1A-1C為熱固性單體的預期結構物。 圖ID- 1E為熱固性二聚物的預期結構物。 圖2A-2D為包含六伸苯之熱固性單體的典型結構物。 圖3A-3C為熱固性單體的預期合成圖式。 圖4為產生經取代的金剛燒的合成圖式。 圖5為產生具有垂懸籠狀結構物的低分子量聚合物的合 成圖式。 圖6為產生具有垂懸籠狀結構物的低分子量聚合物的合 成圖式。 圖7顯示產生熱固性單體的合成圖式。 圖8A-B為各種預期聚合物的結構物。 圖9A-B為產生具有垂懸籠狀結構物的端部加蓋分子的 合成圖式3 圖10為預期低介電常數材料的概略結構物。 圖11為製備包含至少二個異構體的熱固性組份的合成 圖式。 圖12為製備的Reichert的1,3,5,7-肆[4’-(苯基乙炔基)苯基] 金剛烷(對位異構體)的合成圖式。 發明之詳細說明 本文所用之術語”至少二個單體”意指至少二個選自間 •21 - 200408662Ri r4 or a mixture of monomers and dimers, where Y is selected from cage compounds and silicon-19-200408662 (13) atoms; Ri, R2, R3, R4, R5 and R6 are independently selected from aryl and branched chains Aryl and arylene ether; at least one of aryl, branched aryl and arylene has ethynyl; 117 is aryl or substituted aryl; and Ri, R2, R3, R4, R5 and R6: at least One containing at least two isomers; and (b) an adhesion promoter, including-containing a compound having at least difunctionality, wherein the difunctionality may be the same or different, and the first functionality may be the same as the thermosetting component (a) Interaction when the composition is applied to a substrate, the second functionality may interact with the substrate; and (2) polymerize the oligomer to form a low dielectric constant polymer, where the polymerization includes the acetylene group chemistry reaction. The adhesion promoter (b) is preferably selected from (i) ® polycarbosilane, (ii) silane, (iii) phenol-formaldehyde resin or oligomer, (iv) glycidic acid, (v) unsaturated acid acid vinegar Or (vi) the acetamidinyl cyclic oligomer or polymer. In addition, the applicant and the like have also developed a low-spin dielectric constant material comprising: (a) a first main chain having a first aromatic hydrocarbon moiety and a first reactive group and a second aromatic hydrocarbon moiety and a second reactive reagent The second main chain of the group, wherein the first and second main chains are crosslinked by the first and second reactive groups in the crosslinking reaction, and the cage structure is covalently bonded to the first and At least one in the second main chain, wherein the cage structure contains at least 8 atoms; (b) an adhesion promoter comprising a compound having at least difunctionality, wherein the difunctionalities may be the same or different, the first functionality It can interact with the first and second main chains and when the material is applied to the substrate, the difunctionality can interact with the substrate. β-adhesion promoter (b) is preferably selected from (i) polycarbosilane, (Π) silane, (iii) phenol-w formaldehyde resin or oligomer, (iv) glycidyl ether, (v) unsaturated A carboxylic acid ester or (vi) the vinyl cyclic oligomer or polymer described above. -20- 200408662 (14) The various objects, characteristics, aspects and advantages of the present invention will be made clearer by the following detailed description of the preferred specific examples of the present invention together with the accompanying drawings. Brief Description of the Drawings Table 1 shows several representative teachings on low dielectric materials. 1A-1C are expected structures of thermosetting monomers. Figure ID-1E is the expected structure of a thermosetting dimer. 2A-2D are typical structures of a thermosetting monomer containing hexaphenylene. 3A-3C are schematic diagrams of the expected synthesis of a thermosetting monomer. FIG. 4 is a synthetic scheme for generating substituted diamond firing. Figure 5 is a synthetic scheme for producing a low molecular weight polymer having a hanging cage structure. Figure 6 is a synthetic scheme for producing a low molecular weight polymer having a hanging cage structure. FIG. 7 shows a synthetic scheme for generating a thermosetting monomer. Figures 8A-B are structures of various desired polymers. Figures 9A-B are synthetic schemes 3 for generating end capping molecules with a hanging cage structure. Figure 10 is a schematic structure of an expected low dielectric constant material. Fig. 11 is a synthetic scheme for preparing a thermosetting component containing at least two isomers. Fig. 12 is a synthetic scheme of 1,3,5,7-[[4 '-(phenylethynyl) phenyl] adamantane (para-isomer) of Reichert prepared. Detailed description of the invention The term "at least two monomers" as used herein means at least two selected from among 21-200408662

(15) 位、對位及鄭位異構體的不同異構體。此至少二個異構體 較佳為間位及對位異構體。 本文所用之術語”低介電常數聚合物”意指具有介電常 : 數為約3.0或更低的有機、有機金屬或無機聚合物。低介 ’ 電材料通常以具有厚度為100至25,000埃之薄膜形式製 造,但是亦可用作厚膜、塊狀物、圓筒物、球狀物等。 本文所用之術語’’主鏈”意指形成聚合束股的原子或部 分的連續鏈,其被共價地鍵結,使任何原子或部粉的去除 會導致鏈的中斷。 · 本文所用之術語〃反應性基團"意指任何原子、官能度或 基團具有足夠反應性以在化學反應中與另一反應性基團 形成至少一個共價鍵。化學反應可在位於相同或二個分離 主鏈上的二個相同或不同反應性基團.之間發生。亦可預期 反應性基團可與一個或多個第二或外成交聯分子反應以 交聯第一與第二主鏈。雖然不具外成交聯劑的交聯作用呈 現各種優點,包括減少聚合物内反應性基團的總數及減少 所需反應步騾次數,惟不具外成交聯劑的交聯作用亦具有 ® 一些缺點。例如,通常無法調整交聯官能度的量。另一方 面,當聚合反應與交聯反應在化學上不相容時,可使用外 成交聯劑。 本發明所用之術語”籠狀結構物”、”籠狀分子”及”籠狀 , ψ 化合物”希望可互換使用,並意指排列有至少8個原子的分 , 子,使至少一個橋接物共價地連接環系統的二個或以上原 子。換言之,籠狀結構物、籠狀分子或籠狀化合物包含多 -22- 200408662 (16) 個由共價鍵結的;^ $ 、 μ ^成的環,其中結構物、分子或化合 為界疋一盤’使位於盤内的點無法離開盤而不會通過環。 橋接物及/或環系統可包含一個或多個雜原子,並可包含: 万L基團、局部%化或非環化餘和烴基團或局部環化或非·, %化不飽和烴基團。進一步預期籠狀結構物包括富勒烯類 (fUllereneS)及具有至少—個橋接物的冠狀醚。例如,金剛 烷被視為籠狀結構物,而萘或芳烴螺環化合物在此定義的 範圍下並非視為龍狀化合物’因為茶或芳煙螺環化合物不 具有一個或以上橋接物,因此,不在上述籠狀化合物的說鲁 明内。 — 本文所用之術浯黏者促進劑,,意指任何組份,當加入熱 固性組份㈤或聚合物内時’可較單獨熱固性組份㈤或單 獨聚合物改良其對基材的黏著性。本文所用之術語,,具有 主少雙言能度的化合物"意指任何具有二個官能基團可互 相作用或反應或形成以下鍵的組份。官能基團可以各種方 式反應’包括加成反應、親核性或親電性取代作用或消除 作用、放射反應寺。此外,替代性反應亦可包括非共價鍵 _ 如Van der Waals、靜電鍵、離子鍵及氫鍵的形成。 本文所用之術語”層”包括薄膜及塗膜。 熱固性組份(a): 熱固性組份(a)及聚合物揭示於共同讓渡的申請中sn 09/618945 ’ 2000年 7 月 19 日中請;USSN 〇9/897936 , 2〇〇1 年 7月 5 日申請;PCT/US01/22204,2001 年 10 月 17 日申請;US SN * 一 09/54505 8,2000年 4 月 7 日申請;及 US SN 09/902924,2001 年 7 -23 - 200408662(15) Different isomers of isomers, para and ortho positions. These at least two isomers are preferably meta and para isomers. As used herein, the term "low dielectric constant polymer" means an organic, organometallic, or inorganic polymer having a dielectric constant: number of about 3.0 or less. Low dielectric materials are generally manufactured in the form of thin films having a thickness of 100 to 25,000 Angstroms, but they can also be used as thick films, lumps, cylinders, balls, and the like. As used herein, the term "backbone" means a continuous chain of atoms or portions forming a polymeric strand, which is covalently bonded such that the removal of any atom or moiety can cause chain disruption. · Terms used herein 〃Reactive group " means that any atom, functionality, or group is sufficiently reactive to form at least one covalent bond with another reactive group in a chemical reaction. The chemical reaction can be at the same or two separations Occurs between two identical or different reactive groups on the main chain. It is also expected that the reactive groups may react with one or more second or outer crosslinked molecules to crosslink the first and second main chains. Although cross-linking without external cross-linking agents presents various advantages, including reducing the total number of reactive groups in the polymer and reducing the number of reaction steps required, cross-linking without external cross-linking agents also has some disadvantages. For example, it is generally not possible to adjust the amount of cross-linking functionality. On the other hand, when the polymerization reaction and the cross-linking reaction are chemically incompatible, an external cross-linking agent may be used. The term "cage structure" used in the present invention "Cage-like molecules" and "cage-like, ψ compounds" are intended to be used interchangeably and mean that molecules or molecules arranged with at least 8 atoms, such that at least one bridge is covalently connected to two or more atoms of the ring system In other words, a cage structure, a cage molecule, or a cage compound contains more than 22-200408662 (16) covalently bonded rings; ^ $, μ ^ ring, where the structure, molecule or compound is bounded "A plate" makes it impossible for a point located inside the plate to leave the plate without passing through the ring. The bridge and / or ring system may contain one or more heteroatoms and may include: 10,000 L groups, localized or non-rings Residues and hydrocarbon groups are either partially cyclized or non-, unsaturated hydrocarbon groups. It is further expected that cage structures include fullerenes (fUllereneS) and crown ethers with at least one bridge. For example, adamantane is Are considered cage-like structures, and naphthalene or aromatic hydrocarbon spiro compounds are not considered dragon-like compounds within the scope of this definition 'because tea or aromatic tobacco spiro compounds do not have one or more bridges, Said Lu Mingne. As used herein, the term “adhesive accelerator” means that any component, when added to the thermosetting component ㈤ or the polymer, can improve its adhesion to the substrate than the thermosetting component ㈤ or the polymer alone. This article The term used, a compound with major and minor ambiguities " means any component having two functional groups that can interact or react with each other or form the following bonds. Functional groups can react in various ways, including addition reactions , Nucleophilic or electrophilic substitution or elimination, radiation reaction. In addition, alternative reactions can also include non-covalent bonds _ such as the formation of Van der Waals, electrostatic bonds, ionic bonds and hydrogen bonds. Used in this paper The term "layer" includes films and coatings. Thermoset (a): The thermoset (a) and the polymer are disclosed in the commonly assigned application sn 09/618945 'July 19, 2000; USSN 〇 9/897936, filed July 5, 2001; PCT / US01 / 22204, filed October 17, 2001; US SN * 1 09/54505 8, filed April 7, 2000; and US SN 09 / 902924, 2001 7 -23-200408662

月ίο曰申請,其皆併入本文供參考。 熱固性組份(a)包含具有結構物1A所示之一般結構物的 單體The application is filed for the month, which is incorporated herein by reference. The thermosetting component (a) contains a monomer having a general structure shown in Structure 1A

Ri R4Ri R4

R3 (結構物1A) 具有結構物1B所示之一般結構物的二聚物R3 (Structure 1A) Dimer with a general structure shown in Structure 1B

·".·.·Rs (結構物1B), 或單體與二聚物的混合物,其中Y係選自籠狀化合物與 矽原子;Ri,R2,R3,R4,115及R6獨立選自芳基、支鏈芳 基及伸芳醚;芳基、支鏈芳基及伸芳醚中至少一個具有乙 块基;R7為芳基或經取代芳基^其中取代基為燒基、齒素 或芳基。本文所用之術語”芳基"而無進一步說明意指任何 類型的芳基,其可包括如支鏈芳基或伸芳醚。Y較佳為金 剛烷或金剛烷。熱固性單體的典型結構物包括金剛烷、金 剛烷及矽原子分別示於圖ΙΑ,1B及1C,其中η為0與5間或 以上的整數。熱固性二聚物的典型結構物包括金剛烷與金 -24- 200408662 (18) 剛燒分別示於圖1]3及1E,其中η為〇與5間或以上的整數。 在熱固性成分(a)中,較佳呈現單體與二聚物的混合物。 混合物較佳包含約95_97重量%單體與約3乃重量%二聚物。 或者’熱固性組份(a)具有結構物2所示之一般結構物:· &Quot; ... · Rs (structure 1B), or a mixture of monomers and dimers, where Y is selected from cage compounds and silicon atoms; Ri, R2, R3, R4, 115 and R6 are independently selected Aryl, branched aryl, and arylene ether; at least one of aryl, branched aryl, and arylene ether has ethyl block; R7 is aryl or substituted aryl ^ where the substituents are alkyl and halide Or aryl. The term "aryl" as used herein means without further description any type of aryl group, which may include, for example, branched aryl groups or arylene ethers. Y is preferably adamantane or adamantane. Typical structures of thermosetting monomers Objects including adamantane, adamantane and silicon atoms are shown in Figures IA, 1B and 1C, respectively, where η is an integer between 0 and 5 or more. Typical structures of thermosetting dimers include adamantane and gold-24-200408662 ( 18) Freshly fired are shown in Figure 1] 3 and 1E, respectively, where η is an integer between 0 and 5 or more. In the thermosetting component (a), it is preferred to present a mixture of monomers and dimers. The mixture preferably contains About 95-97% by weight of the monomer and about 3% by weight of the dimer. Or, the thermosetting component (a) has the general structure shown in Structure 2:

Rfi R,6、AI /R2Rfi R, 6, AI / R2

Ar.Ar.

P, / I R5 R、R3 (結構物2) 其中Ar為芳基,而RVR,6獨立選自芳基、支鏈芳基、伸芳 酸且無取代作用,及其中芳基、支鏈芳基及伸芳醚各具有 主少一個乙块基。熱固性單體的典型結構物包括四與六取 代的六伸笨分別示於圖2八_^與2C_2E)。 一般示於結構物丨八與⑺及2之熱固性單體可藉各種合成 途徑提供’對結構物1A與1B及2的典型合成技術示於圖 3A-3C。圖3A敘述及實例5說明一較佳合成途徑供具有金剛 烷作為籠狀化合物的預期熱固性單體的產生,其中溴芳烴 在鈀催化的Heck反應中被苯基乙炔化。首先,根據前述程 序(J.〇rg.Chem.45, 5405-5408(1980),Sollot,G.P.c與 Gilbert,Ε·Ε·) 將金剛烷(1)溴化成1,3,5,7-四溴金剛烷(TBA) (2J。ΤΒΑ與溴 化苯反應以得1,3,5,7-四(3,/4· -溴苯基)金剛烷(ΤΒΡΑ) 〇_), 如敘述於 Macromolecules,27, 7015-7022( 1990),Reichert, V.R與 Mathias L.J·而TBPA根據標準反應程序在鈀催化的Heck反應 中與經取代乙炔芳基後續反應以得1,3,5,7·肆[3/4-(芳基乙 決基)苯基]金剛燒(生)。實例5持續顯示Reichert工作與發明 -25· 200408662 (19) 背景所述的化合物及預期熱固性組份(a)之間的差異《鈀 催化的Heck反應亦可用於熱固性單體與六伸苯作為芳烴 部分的合成,如圖2A-2D所示,其中四溴六伸苯與六溴-六伸苯分別與乙炔芳基化合物反應以得所欲對映熱固性 單體。 或者,TBA可轉化成羥基芳基化金剛烷,其隨後在親核 性芳烴取代反應中轉變成熱固性單體。在圖3B中,TBAU) 如上述自金剛燒(JJ產生,且進一步在親電性四取代作用 中與苯酚反應以得1,3,5,7-肆(374、羥基苯基)金剛烷 (THPA)(i)。或者,TBA亦可與苯甲醚反應以得1,3,5,7·肆 (3V4’ -甲氧基苯基)金剛烷(幻,其可進一步與ΒΒγ3反應以得 (THPA)(i)。然後,ΤΗΡΑ可使用標準程序(例如,工程塑料 -聚芳链手冊,R.J. Cotter, Gordon and Breach Publishers,ISBN 2-88449- 112-0)在碳酸鉀存在下於各種親核性芳烴取代反 應中與活化氟芳烴反應以產生所欲熱固性單體,或THPA 可在標準芳烴取代反應(例如,上述工程塑料)中與4-鹵基 -4’-氟二苯乙炔(鹵基=Br或I)反應以得1,3,5,7-肆{3’/4’ -[4”-(鹵代苯基乙炔基)苯氧基]苯基}金剛烷α)。在另一替 代性反應中,亦可使用各種替代性反應劑以產生熱固性單 體。同樣,親核性芳烴取代反應亦可用於熱固性單體與六 伸苯作為芳烴部分的合成中,其中六伸苯係與4-氟二苯乙 块反應以產生熱固性單體。或者,間環己烷三醇可在標準 芳烴取代反應中與4-[4’·(氟苯基乙炔基)苯基乙炔基]苯反 應以得.1,3,5-參{4’-[4”-(苯基乙炔基)苯基乙炔基]苯氧基} 200408662 (20) 苯。 當籠狀化合物為矽原子時,典型較佳合成圖式示於圖 3C,其中溴(苯基乙炔基)芳烴臂狀物(及)(其中η為0與5之間 ·· 或以上的整數)轉化成對應(苯基乙炔基)芳基鋰臂狀物 ,· (23,其後續與四氯化矽反應以得具有矽原子作為籠狀化 合物(1 0)之所欲星狀熱固性單體。 籠狀化合物較佳為矽原子、金剛烷、金鋼烷或若干金剛 烷或金鋼烷。在本發明主題的另一態樣中,亦預期金剛烷 或金鋼烷以外的各種籠狀化合物。須知籠狀化合物的分子 I 大小與組態組合臂狀物Ri-116或的總長度將決定在 最後低介電常數聚合物中若干物性與機械性(藉空間位阻 效應)。因此,當相當小籠狀化合物合意時,可預期經取 代與衍生金剛烷、金鋼烷及相當小橋接環狀脂族與芳烴化 合物(通常具有低於15個原子)。相對照地,在較大籠狀化 合物合宜時,則可預期較大橋接環狀脂族與芳烴化合物 (通常具有高於15個原子)與富勒烯。 預期的籠狀化合物不需限於僅包括碳原子,亦可包括雜 I 原子如N,S,Ο,P等。雜原子最好介紹非四角形鍵結角度 組態,其進而可使臂狀物1^-116或R’rR、在附加鍵結角度 下的共價接附。關於預期籠狀化合物的取代基與衍生作 用,須知許多取代基與衍生作用皆適當。例如,當籠狀化 . 合物相當疏水性時,可導入親水性取代基以增加親水性溶 劑的溶解度,反之亦然。因此,在希望極性的情況下,極 性側基團可加入籠狀化合物中。進一步可預期適當取代基 •27· 200408662 (21) 亦可包括不耐熱基團以及親核性與親電性基團。亦須知官 能基團可用於籠狀化合物中(例如,以利交聯反應、衍生 反應等)。當衍生籠狀化合物時,由其可預期衍生作用包 括籠狀化合物妁函化,而特佳的卣素為氟與溴。 當熱固性單體(a)具有偶合至臂狀物R’i-R、的芳基如結 構物2所示,芳基較佳包含苯基,芳基更佳為苯基以形成 六伸苯。在本發明主題的另一態樣中,可預期除了苯基(或 六伸苯)以外的各種芳基化合物亦適當,包括經取代與未 經取代二與多環芳烴化合物。經取代與未經取代二與多環 芳烴化合物特佳,而增加的熱固性單體的大小較佳。例 如,當希望替代性芳基以一因次超過以另一因次延伸時, 特別可預期莕、菲及E。在其他情況下,當希望替代性芳 基以對稱延伸時,可預期多環芳基如暈苯。在特佳態樣 中,預期的二與多環芳基具有共軛芳烴系統,其可或不可 包括雜原子。關於預期芳基的取代與衍生,相同考慮可應 用於籠狀化合物,如本文所述。 關於臂狀物與R’^R’6,R「R6較佳為各自選自芳 基、支鏈芳基及伸芳醚,而較佳為各自選自芳基、 支鏈芳基及伸芳醚而無取代作用。對1^-116與R’i-R'6的特 別預期芳基包括具有(苯基乙炔基)苯基、笨基乙炔基(苯 基乙炔基)苯基及(苯基乙炔基)苯基苯基部分的芳基。特 佳伸芳醚包括(苯基乙炔基苯基)苯基醚。對R7特別預期的 芳基包括苯基與經取代芳基如用氫、烷基、芳基或函素取 代的苯基。 -28· 200408662 (22) 在本發明主題的另一態樣中,熱固性組份的適當臂狀物 不限於芳基、支鏈芳基及伸芳醚,只要替代性臂狀物RrRs 與R'-R、包含反應性基團以及熱固性組份的聚合包括涉 及反應性基團的反應。例如,預期的臂狀物可相當短而不 超過6個原子,其可為或不可為原子。該短臂狀物特別有 利,當空隙或孔隙希望加入最後產物或材料中且空隙的大 小必須相當小。相對照地,當較佳為特長臂狀物時,臂狀 物可包含具有7-40及以上個原子的低聚物或聚合物。此等 長臂狀物較較小臂狀物更有利設計於材料穩定性、熱穩定 性或孔隙度。此外,共價地偶合至預期熱固性單體的臂狀 物的長度與化學組合物可在一個單體内改變。例如,籠狀 化合物可具有二個相當短臂狀物與二個相當長臂狀物以 促進在聚合期間以特殊方向的因次生長。在另一實例中, 籠狀化合物可具有化學上彼此不同的二個臂狀物以促進 區域選擇性衍生反應。 雖然在熱固性組份中所有臂狀物較佳具有至少一個反 應性基團,在另一態樣中低於所有臂狀物必須具有一個反 應性基團。例如,籠狀化合物可具有4個臂狀物,而僅3 或2個臂狀物負載反應性基團。或者,熱固性組份中的芳 基可具有3個臂狀物,其中僅2個或1個臂狀物具有反應性 基團《—般預期各臂狀物1^-116與反應性基團的 數目端視臂狀物的化學性質與所欲端產物的品質而定。此 外,預期反應性基團定位於臂狀物的任何部分,包括臂狀 物的主.鍵側鏈或終端。須知熱固性組份(a)内反應性基團 -29- 200408662 (23) 的數目可用作控制交聯程度的工具。例如,當需要相當低 交聯程度時,預期的熱固性單體可僅具有一個或二個反應 性基團,其可或不可定位於一臂狀物内。另一方面,當需 要相當高交聯程度時,三個或以上反應性基團可包括於單 體内。較佳反應性基團包括親電性與親核能性基團更佳基 團可參與環加成反應,特佳反應性基團為乙炔基。 在臂狀物中除了反應性基團以外,其他基團包括官能基 團亦可包括於臂狀物内。例如,在熱固性單體的聚合後, 當特殊官能度(例如不耐熱部分)加入聚合物合宜時,該官 能度可共價地鍵結至官能基團。 熱固性組份(a)可藉各種不同機理聚合,聚合的實際機 理主要視參與聚合過程的反應性基團而定。因此,預期機 理包括親核性、親電性及芳烴取代作.用、加成作用、消除 作用、游離基聚合反應及環加成反應,特佳聚合機理為環 加成,其涉及至少一個位於至少一個臂狀物的乙炔基。在 具有選自芳基、支鏈芳基及伸芳醚的臂狀物的熱固性組份 (a)中,其中芳基、支鏈芳基及伸芳醚中至少三個具有單 一乙炔基,熱固性組份(a)的聚合可包括至少二個乙炔基 之環加成反應(即,化學反應)。在另一實例中,在所有芳 基、支鏈芳基及伸芳醚的臂狀物具有單一乙炔基的熱固性 組份(a)中,聚合過程可包括乙炔基之環加成反應(即,化 學反應)。在另一實例中,環加成反應(即,Diels-Alder反 應)可發生在熱固性組份(a)中至少一個臂狀物内的乙炔 基與位於聚合物内的二烯基之間。進一步可預期熱固性組 -30- 200408662 (24) 份(a)的聚合在附加分子(如交聯劑)未參與時發生,較佳作 為熱固性組份(a)之反應性基團間的環加成反應。然而, 在本發明主題的另一態樣中,交聯劑可用以共價地偶合熱 固性組份(a)至聚合物。該共價偶合可發生在反應性基團 與聚合物之間或發生在官能基團與聚合物之間。 端視熱固性組份(a)聚合的機理而定,反應條件可相當 大改變。例如,當單體由使用至少一個臂狀物的乙炔基的 環加成反應聚合時,熱固性單體的加熱至約250°C或以上 歷約45分鐘通常已足夠。相對照地,當單體由游離基反應 聚合時,適合加入游離基起動劑。較佳聚合方法與技術敘 述於實例中。 熱固性組份可位於聚合物的任何點上或聚合物主鏈 上,包括聚合物的終端或側鏈。 預期聚合物包括各種聚合物類型如聚亞胺、聚苯乙烯、 聚醢胺等。然而,特別可預期聚合物包含聚伸芳烯,更佳 為聚(伸芳醚)。在一更佳態樣中,聚合物至少部分自熱固 性單體製成,特別預期聚合物完全自熱固性組份的異構體 製成。 在一特別預期臂狀物中,伸展技術敘述於圖4中,其中 Ad代表金剛烷或金鋼烷基團,苯基乙炔為一起始分子, 其係與TBPA(如上)反應(1)以得1,3,5,7-肆[374f-(苯基乙炔 基)苯基]金剛烷(TPEPA)。或者,苯基乙炔可轉化(2)成4-(苯 基乙炔基)苯基溴,隨後其係與三甲基甲矽烷基乙炔 (TiMSA)反應(3)以形成4-(苯基乙炔基)苯基乙炔。然後, 200408662 (25) 丁BPA可與4-(苯基乙炔基)苯基乙炔反應(4)以得1,3,5,7-肆 {3’/4’-[4”-(苯基乙炔基)苯基乙炔基]苯基}金剛烷 (TPEPEPA)。在另一伸展反應中,4-(苯基乙炔基)苯基乙炔 / 係與1-溴-4-碘苯反應(5)以形成4-[4f-(苯基乙炔基)苯基乙 , 炔基]苯基溴,其進一步轉化(6)成4-[4f-(苯基乙炔基)苯基 乙块基]乙炔。然後,如此形成的4-[4’-(苯基乙炔基)苯基 乙炔基]乙炔與TBA反應(7)以得1,3,5,7-肆{374、[4Π-(4"’-(苯基乙炔基)苯基乙炔基)苯基乙炔基]苯基}金剛烷。P, / I R5 R, R3 (Structure 2) where Ar is an aryl group, and RVR, 6 is independently selected from aryl, branched aryl, aryanoic acid without substitution, and aryl and branched aryl And aryl ether each have one ethyl group. Typical structures of thermosetting monomers include four and six substituted hexabenzines, respectively, as shown in Fig. 2A and 2C_2E). The thermosetting monomers generally shown in structures 丨 VIII and ⑺ and 2 can be provided by various synthetic pathways'. Typical synthesis techniques for structures 1A, 1B, and 2 are shown in Figures 3A-3C. Figure 3A description and Example 5 illustrate a preferred synthetic route for the production of the expected thermosetting monomers with adamantane as a cage compound, in which bromoarene is acetylated with phenyl in a palladium-catalyzed Heck reaction. First, according to the aforementioned procedure (J. Org. Chem. 45, 5405-5408 (1980), Sollot, GPC and Gilbert, E · E ·) bromodamantane (1) is brominated to 1,3,5,7-tetra Bromoadamantane (TBA) (2J. TBA reacts with brominated benzene to give 1,3,5,7-tetra (3, / 4 · -bromophenyl) adamantane (TBPA) 〇_), as described in Macromolecules , 27, 7015-7022 (1990), Reichert, VR and Mathias LJ. TBPA followed the reaction with a substituted acetylene aryl group in a palladium-catalyzed Heck reaction according to standard reaction procedures to obtain 1, 3, 5, 7 · [ 3 / 4- (arylethenyl) phenyl] adamantine (raw). Example 5 continues to show the differences between Reichert's work and Invention-25 · 200408662 (19) background compounds and the expected thermosetting component (a), "Heck reaction catalyzed by palladium can also be used for thermosetting monomers and hexaphenylene as aromatic hydrocarbons. Partial synthesis is shown in Figures 2A-2D, in which tetrabromohexadecene and hexabromo-hexadecene are reacted with an acetylene aryl compound to obtain the desired enantiomeric thermosetting monomer. Alternatively, TBA can be converted to a hydroxyarylated adamantane, which is subsequently converted to a thermosetting monomer in a nucleophilic arene substitution reaction. In FIG. 3B, TBAU) is produced from diamond firing (JJ as described above, and further reacts with phenol in the electrophilic tetrasubstitution to obtain 1,3,5,7-((374, hydroxyphenyl) adamantane ( THPA) (i). Alternatively, TBA can also be reacted with anisole to obtain 1,3,5,7 · (3V4'-methoxyphenyl) adamantane (magic, which can be further reacted with Βγ3 to obtain (THPA) (i). THPA can then use standard procedures (for example, Engineering Plastics-Polyarene Chain Manual, RJ Cotter, Gordon and Breach Publishers, ISBN 2-88449- 112-0) in various pro Nuclear aromatics are reacted with activated fluoroaromatics to produce the desired thermosetting monomer, or THPA can be reacted with 4-halo-4'-fluorodiphenylacetylene (halogen Group = Br or I) to obtain 1,3,5,7-{{3 '/ 4'-[4 "-(halophenylethynyl) phenoxy] phenyl} adamantane α). In another alternative reaction, various alternative reactants can also be used to generate thermosetting monomers. Similarly, the nucleophilic aromatic substitution reaction can also be used for thermosetting monomers and hexaphenylene as aromatic compounds. In part of the synthesis, hexaphenylene is reacted with 4-fluorodiphenylethyl block to produce thermosetting monomers. Alternatively, m-cyclohexanetriol can be reacted with 4- [4 '· (fluorobenzene) in a standard aromatic substitution reaction. Acetylethynyl) phenylethynyl] benzene to give .1,3,5-gins {4 '-[4 "-(phenylethynyl) phenylethynyl] phenoxy} 200408662 (20) benzene. When the cage compound is a silicon atom, a typical preferred synthetic scheme is shown in FIG. 3C, in which bromine (phenylethynyl) arene arms (and) (where η is an integer between 0 and 5 or more) ) Into the corresponding (phenylethynyl) aryl lithium arm, (23, which is subsequently reacted with silicon tetrachloride to obtain the desired star-shaped thermosetting monomer having a silicon atom as a cage compound (1 0) The cage compound is preferably a silicon atom, adamantane, adamantane, or some adamantane or adamantane. In another aspect of the subject matter of the present invention, various cage compounds other than adamantane or adamantane are also contemplated. Note that the molecular size of the cage compound and the total length of the combined arms Ri-116 or the configuration will determine the final low dielectric constant polymer Dry physical properties and mechanical properties (by steric hindrance effect). Therefore, when quite small cage compounds are desirable, substituted and derivatized adamantane, adamantane, and relatively small bridged cyclic aliphatic and aromatic compounds (usually having Less than 15 atoms). In contrast, when larger cage compounds are appropriate, larger bridges of cyclic aliphatic and aromatic compounds (typically having more than 15 atoms) and fullerenes can be expected. The compound does not need to be limited to include only carbon atoms, and may include hetero I atoms such as N, S, O, P, and the like. Heteroatoms are best introduced with non-tetragonal bonding angle configurations, which in turn allow covalent attachment of arms 1 ^ -116 or R'rR at additional bonding angles. Regarding the expected substituents and derivatizations of cage compounds, it should be noted that many substituents and derivatizations are appropriate. For example, when caged compounds are fairly hydrophobic, hydrophilic substituents can be introduced to increase the solubility of the hydrophilic solvent and vice versa. Therefore, where polarity is desired, polar side groups can be added to the cage compound. It is further expected that appropriate substituents • 27 · 200408662 (21) may also include heat-labile groups as well as nucleophilic and electrophilic groups. It should also be noted that functional groups can be used in cage compounds (for example, to facilitate crosslinking reactions, derivatization reactions, etc.). When a cage compound is derived, the expected derivatization includes a cage compound function, and particularly preferred halogens are fluorine and bromine. When the thermosetting monomer (a) has an aryl group coupled to the arms R'i-R, as shown in Structure 2, the aryl group preferably contains a phenyl group, and the aryl group is more preferably a phenyl group to form hexaphenylene. In another aspect of the subject matter of the present invention, it is contemplated that various aryl compounds other than phenyl (or hexaphenylene) are also suitable, including substituted and unsubstituted di- and polycyclic aromatic hydrocarbon compounds. Substituted and unsubstituted di- and polycyclic aromatic hydrocarbon compounds are particularly preferred, and the increased thermosetting monomers are preferred. For example, pyrene, phenanthrene, and E are particularly expected when the substitution of an alternative aryl group by one factor over another factor is desired. In other cases, when it is desired that the alternative aryl groups extend symmetrically, polycyclic aryl groups such as coronabenzene are contemplated. In a particularly preferred aspect, the intended di- and polycyclic aromatic groups have a conjugated aromatic hydrocarbon system, which may or may not include heteroatoms. With regard to the substitution and derivation of the intended aryl group, the same considerations apply to cage compounds, as described herein. Regarding the arms and R '^ R'6, R "R6 is preferably each selected from the group consisting of aryl, branched aryl, and arylene ether, and preferably each selected from aryl, branched aryl, and arylene Ether without substitution. Particularly expected aryl groups for 1 ^ -116 and R'i-R'6 include those having (phenylethynyl) phenyl, phenylethynyl (phenylethynyl) phenyl, and (benzene Ethynyl) phenyl group of phenylphenyl moiety. Particularly preferred arylene ethers include (phenylethynylphenyl) phenyl ethers. Aryl groups that are particularly expected for R7 include phenyl and substituted aryl groups such as hydrogen and alkane Aryl, aryl, or halo substituted phenyl. -28 · 200408662 (22) In another aspect of the subject matter of the present invention, suitable arms of the thermosetting component are not limited to aryl, branched aryl, and aryl Ether, as long as the replacement of the arms RrRs with R'-R, containing reactive groups, and thermosetting components includes reactions involving reactive groups. For example, the expected arms can be quite short without exceeding six Atoms, which may or may not be atoms. The short arms are particularly advantageous when voids or voids are desired to be added to the final product or material and the size of the voids Must be quite small. In contrast, when extra long arms are preferred, the arms may contain oligomers or polymers having 7-40 atoms and above. These long arms are smaller than The composition is more advantageous for material stability, thermal stability, or porosity. In addition, the length and chemical composition of the arms covalently coupled to the intended thermosetting monomer can be changed within one monomer. For example, cage compounds May have two rather short arms and two rather long arms to promote factorial growth in a particular direction during polymerization. In another example, the cage compound may have two arms that are chemically different from each other To promote regioselective derivatization. Although all arms in a thermosetting component preferably have at least one reactive group, in another aspect less than all arms must have one reactive group. For example The cage compound may have 4 arms, and only 3 or 2 arms carry a reactive group. Alternatively, the aryl group in the thermosetting component may have 3 arms, of which only 2 or 1 The arms have reactive groups -Generally, the number of each of the arms 1 ^ -116 and the number of reactive groups is expected to depend on the chemical properties of the arms and the quality of the desired end product. In addition, it is expected that the reactive groups are positioned in any of the arms Portions, including the main.bond side chains or terminals of the arms. Note that the number of reactive groups-29- 200408662 (23) in the thermosetting component (a) can be used as a tool to control the degree of crosslinking. For example, when required When the degree of crosslinking is relatively low, the desired thermosetting monomer may have only one or two reactive groups, which may or may not be located in one arm. On the other hand, when a relatively high degree of crosslinking is required, three Two or more reactive groups may be included in the monomer. Preferred reactive groups include electrophilic and nucleophilic groups. Better groups can participate in the cycloaddition reaction. Particularly preferred reactive groups are ethynyl groups. In addition to the reactive groups in the arms, other groups including functional groups can also be included in the arms. For example, after polymerization of a thermosetting monomer, when a special functionality (such as a heat-resistant portion) is suitably added to the polymer, the functionality can be covalently bonded to the functional group. The thermosetting component (a) can be polymerized by various mechanisms. The actual mechanism of polymerization depends mainly on the reactive groups involved in the polymerization process. Therefore, the expected mechanisms include nucleophilicity, electrophilicity, and aromatic hydrocarbon substitution. Use, addition, elimination, free radical polymerization, and cycloaddition, the most preferred polymerization mechanism is cycloaddition, which involves at least one Ethynyl with at least one arm. In the thermosetting component (a) having an arm selected from the group consisting of an aryl group, a branched chain aryl group, and an extended aryl ether, at least three of the aryl group, the branched chain aryl group, and the extended aryl ether have a single acetylene group, and the thermosetting property The polymerization of component (a) may include a cycloaddition reaction (ie, a chemical reaction) of at least two ethynyl groups. In another example, in a thermosetting component (a) in which all aryl, branched aryl, and arylene ether arms have a single ethynyl group, the polymerization process may include a cycloaddition reaction of ethynyl groups (ie, chemical reaction). In another example, a cycloaddition reaction (i.e., a Diels-Alder reaction) may occur between an ethynyl group in at least one arm in the thermosetting component (a) and a dienyl group located in the polymer. It can be further expected that the thermosetting group-30-200408662 (24) part (a) polymerization occurs when additional molecules (such as a cross-linking agent) are not involved, and is preferably used as a cycloaddition between the reactive groups of the thermosetting component (a)成 反应。 Reaction. However, in another aspect of the subject matter of the present invention, a crosslinking agent may be used to covalently couple the thermosetting component (a) to the polymer. This covalent coupling can occur between a reactive group and the polymer or between a functional group and the polymer. Depending on the mechanism of polymerization of the thermosetting component (a), the reaction conditions may vary considerably. For example, when the monomer is polymerized by a cycloaddition reaction using an ethynyl group using at least one arm, heating of the thermosetting monomer to about 250 ° C or more for about 45 minutes is usually sufficient. In contrast, when a monomer is polymerized by a radical reaction, it is suitable to add a radical starter. The preferred polymerization methods and techniques are described in the examples. The thermosetting component can be located at any point on the polymer or on the polymer backbone, including the polymer's terminal or side chains. The polymers are contemplated to include various polymer types such as polyimide, polystyrene, polyamidine, and the like. However, it is particularly expected that the polymer contains polyarylene, and more preferably poly (arylene ether). In a more preferred aspect, the polymer is made at least partially from a thermosetting monomer, and it is specifically expected that the polymer is made entirely from the isomers of the thermosetting component. In a particularly expected arm, the stretching technique is described in Figure 4, where Ad represents adamantane or adamantane group, and phenylacetylene is a starting molecule, which is reacted with TBPA (as above) (1) to obtain 1,3,5,7-H [374f- (phenylethynyl) phenyl] adamantane (TPEPA). Alternatively, phenylacetylene can be converted (2) to 4- (phenylethynyl) phenyl bromide, which is subsequently reacted (3) with trimethylsilylacetylene (TiMSA) to form 4- (phenylethynyl) ) Phenylacetylene. Then, 200408662 (25) butyl BPA can be reacted with 4- (phenylethynyl) phenylacetylene (4) to obtain 1,3,5,7-{{3 '/ 4'-[4 "-(phenyl Ethynyl) phenylethynyl] phenyl} adamantane (TPEPEPA). In another extension reaction, 4- (phenylethynyl) phenylacetylene / reacts with 1-bromo-4-iodobenzene (5) To form 4- [4f- (phenylethynyl) phenylethyl, alkynyl] phenyl bromide, which is further converted (6) to 4- [4f- (phenylethynyl) phenylethyl bulk] acetylene. Then, the 4- [4 '-(phenylethynyl) phenylethynyl] acetylene thus formed is reacted with TBA (7) to obtain 1,3,5,7- 肆 {374, [4Π- (4 "' -(Phenylethynyl) phenylethynyl) phenylethynyl] phenyl} adamantane.

本發明亦提供一種旋壓低介電常數聚合物,包含: I (a)具有垂懸籠狀結構物的聚合物-[〇R24(R25)m〇R26]n-,其 中R24為-C6H3- ; R25為金剛烷、金鋼烷、(C6H5)p(金剛烷)或 (匸6仏)?(金鋼烷);111=1-3;11=1-103;?=0或1;及1126為2,3,4,5-(四 苯基)環二烯酮-1的基或The present invention also provides a spinning low dielectric constant polymer, comprising: (a) a polymer having a hanging cage structure-[〇R24 (R25) m〇R26] n-, wherein R24 is -C6H3-; R25 is adamantane, adamantane, (C6H5) p (adamantane) or (匸 6 仏)? (Adamantane); 111 = 1-3; 11 = 1-103;? = 0 or 1; and 1126 is a group of 2,3,4,5- (tetraphenyl) cyclodienone-1 or

及(b)黏著促進劑,包含具有至少雙官能度之化合物,其 中雙官能度可相同或不同,第一官能度可與具有垂懸籠狀 結構物的聚合物交互作用而當組合物塗敷至基材時,第二 官能度可與基材交互作用β黏著促進劑(b)較佳選自(i)聚 碳矽烷,(ii)矽烷,(iii)苯酚-甲醛樹脂或低聚物,(iv)縮水 甘油醚.,(v)不飽和羧酸酯或(vi)上述乙烯基環狀低聚物或 -32- 200408662 (26) 聚合物。 如前所述,本發明亦提供一種旋壓低介電常數材料,包 含:(a)具有第一芳烴部分與第一反應性基團的第一主 鏈;具有第二芳烴部分與第二反應性基團的第二主鏈,其 中第一與第二主键在交聯反應中精由第一與第二反應基 團交聯;及共價地鍵結至第一與第二主鏈中至少一個的籠 狀結構物,其中籠狀結構物包含至少8個原子;及(b)黏著 促進劑,包含具有至少雙官能度之化合物,其中雙官能度 可相同或不同,第一官能度可與第一與第二主鏈交互作用 而當組合物塗敷至基材時,第二官能度可與基材交互作 用。 至少一個主鏈可包含聚(伸芳醚),分別具有二個垂懸金 剛烷基團作為籠狀結構物,如結構物3A-B所示(僅顯示一 個主鏈的重複單元)。較佳交聯條件為加熱聚(伸芳醚)主 鏈至溫度為約200-250°C或以上歷約30- 180分鐘。結構物3B 可如以下實例1-3概述般合成。And (b) an adhesion promoter comprising a compound having at least difunctionality, wherein the difunctionality may be the same or different, and the first functionality may interact with a polymer having a hanging cage structure to be applied as a composition When reaching the substrate, the second functionality can interact with the substrate. The β adhesion promoter (b) is preferably selected from (i) polycarbosilane, (ii) silane, (iii) phenol-formaldehyde resin or oligomer, (Iv) glycidyl ether, (v) unsaturated carboxylic acid ester or (vi) the above-mentioned vinyl cyclic oligomer or -32-200408662 (26) polymer. As mentioned above, the present invention also provides a spinning low dielectric constant material, comprising: (a) a first main chain having a first aromatic hydrocarbon moiety and a first reactive group; having a second aromatic hydrocarbon moiety and a second reactivity A second main chain of the group, wherein the first and second main bonds are crosslinked by the first and second reactive groups in a crosslinking reaction; and covalently bonded to at least one of the first and second main chains A cage structure, wherein the cage structure includes at least 8 atoms; and (b) an adhesion promoter comprising a compound having at least difunctionality, wherein the difunctionality may be the same or different, and the first functionality may be the same as that of the first One interacts with the second backbone and the second functionality can interact with the substrate when the composition is applied to the substrate. At least one of the main chains may contain poly (arylene ether), each having two hanging adamantyl groups as a cage structure, as shown in structure 3A-B (only one repeating unit of the main chain is shown). The preferred crosslinking conditions are heating the poly (arylene ether) backbone to a temperature of about 200-250 ° C or above for about 30-180 minutes. Structure 3B can be synthesized as outlined in Examples 1-3 below.

結構物3 A 結構物3 B 第一與第二芳烴部份包含苯基,而第一與第二反應性基 團分別為乙炔基、四環酮或乙炔基與四環酮部分,其在 -33- 200408662Structure 3 A Structure 3 B The first and second aromatic hydrocarbon portions contain a phenyl group, and the first and second reactive groups are ethynyl, tetracyclone, or ethynyl and tetracyclone portions, respectively, at- 33- 200408662

(27)(27)

Diels-Alder反應中反應以交聯主鏈。 在另一具體例中,主鏈不必限於聚(伸芳链),但可視最 後低介電常數材料的所欲物理-化學特性而定。因此’當 ’ 希望相當高Tpt,特別預期無機材料,包括含有矽酸鹽 , (Si〇2)及/或鋁酸鹽(Al2〇3)的無機聚合物。在需要撓性、加 工容易性或低應力/TCE等的情沉下,可預期有機聚合物。 因此,端視特殊應用而定,預期有機主鏈包括芳烴聚亞 胺、聚醯胺及聚酯。 雖然較佳自具有分子量為約1000至10,000的低分子量聚 ® 合物完成,惟第一與第二聚合主鏈的鏈長可考慮5或以下 重複單元至若干104重複單元及以上之間改變。較佳主鏈 係在芳烴取代反應中自單體合成,而合成途徑利用圖5與6 的實例顯示。進一步可預期替代性主鏈亦可為至少部分支 鏈、超支鏈或交聯。或者,主鏈亦可就地自單體合成。適 當單體較佳可包括芳烴雙酚化合物與二氟芳烴化合物,其 可具有〇與約20個之間内裝籠狀結構物。 又可預期適當熱固性組份(a)可具有或包含一四角形結 ® 構物,其概示於結構物1A與1B或4A與4B内。在一般結構物 1A與1B中,熱固性單體具有籠狀結構物Y,而側鏈Ri-116 中至少二個包含芳烴部分與反應性基團,其中第一單體的 反應性基團中至少一個與第二單體的反應性基團中至少 / 一個反應以產生低介電常數聚合物。在一般結構物4A , 中,籠狀結構物,較佳為金剛烷,偶合至參與聚合的四個 芳烴部分,其中Ri-Re可相同或不同。Ri,R2,R3及R4中至 •34- 200408662 (28) 少一個包含至少二個異構體。在一般結構物4B中,各籠狀 結構物,較佳為金剛烷,偶合至參與聚合的三個芳烴部 分,其中RrR6可相同或不同而此等籠狀化合物中至少二 ’ 個係由芳基或經取代芳基結合。Ri,R2,,R4,及尺6 , 中至少一個包含至少二個異構體。較佳的是,金剛烷的至 少二個異構體相對於r7存在。The Diels-Alder reaction reacts to crosslink the backbone. In another specific example, the main chain does not have to be limited to poly (arylene), but it may depend on the desired physical-chemical properties of the final low dielectric constant material. Therefore, when the Tpt is expected to be quite high, inorganic materials are particularly expected, including inorganic polymers containing silicate, (SiO2) and / or aluminate (Al203). Organic polymers can be expected in cases where flexibility, ease of processing, or low stress / TCE are required. Therefore, depending on the particular application, it is expected that the organic backbone includes aromatic polyimides, polyamidoamines, and polyesters. Although it is preferably done from a low molecular weight polymer having a molecular weight of about 1000 to 10,000, the chain lengths of the first and second polymerized main chains can be considered to vary between 5 or less repeating units to several 104 repeating units and above. The preferred main chain is synthesized from the monomers in an aromatic substitution reaction, and the synthetic route is shown using the examples of Figs. It is further contemplated that the alternative main chain may also be at least partially branched, hyperbranched, or crosslinked. Alternatively, the backbone can be synthesized in situ from the monomers. Suitable monomers may preferably include aromatic bisphenol compounds and difluoroaromatic compounds, which may have between 0 and about 20 built-in cage structures. It is also expected that a suitable thermosetting component (a) may have or include a quadrangular junction ® structure, which is outlined in structures 1A and 1B or 4A and 4B. In the general structures 1A and 1B, the thermosetting monomer has a cage structure Y, and at least two of the side chains Ri-116 include an aromatic hydrocarbon moiety and a reactive group, wherein at least two of the reactive groups of the first monomer One or more of the reactive groups of the second monomer react to produce a low dielectric constant polymer. In the general structure 4A, a cage structure, preferably an adamantane, is coupled to the four aromatic hydrocarbon moieties participating in the polymerization, wherein Ri-Re may be the same or different. Ri, R2, R3, and R4 up to • 34- 200408662 (28) At least one contains at least two isomers. In the general structure 4B, each cage structure, preferably adamantane, is coupled to three aromatic hydrocarbon moieties participating in the polymerization, wherein RrR6 may be the same or different and at least two of these cage compounds are aryl groups. Or through a substituted aryl group. At least one of Ri, R2, R4, and R6 contains at least two isomers. Preferably, at least two isomers of adamantane are present relative to r7.

結構物4A 結構物4B 當使用具有四角形結構物的單體時,籠狀結構物會以三因 次組態共價地連接四個主鏈。具有四角型結構物的典型單 體及其合成顯示於圖3A。進一步須知替代性單體不必限 於具有經取代或未經取代金剛烷作為籠狀結構物的化合 物,但亦可包含任何環烷基或環伸烷基結構物、立方烷、 經取代或未經取代金鋼烷或富勒烯作為籠狀結構物。預期 取代基包括烷基、芳基、自素及官能基。例如,金剛烷可 用-CF3基、具有1至10個碳原子的第三烷基、苯基、-COOH、 -N〇24 -F、-C1或-Βι:取代。因此,端視籠狀結構物的化學 性質而定,除了 4個芳烴部分以外的各數目可接附至籠狀 結構物。例如,當希望透過籠狀結構物之相當低交聯程度 時,1至3個芳烴部分可接附至籠狀結構物,其中芳烴部分 -35· 200408662Structure 4A Structure 4B When a monomer with a quadrangular structure is used, the cage structure covalently connects the four main chains in a three-dimensional configuration. A typical monomer with a quadrangular structure and its synthesis is shown in Figure 3A. It is further noted that the alternative monomers need not be limited to compounds having substituted or unsubstituted adamantane as a cage structure, but may also include any cycloalkyl or cycloalkylene structure, cubic alkane, substituted or unselected Substituted amalgam or fullerene as a cage structure. It is contemplated that the substituents include alkyl, aryl, autogen, and functional groups. For example, adamantane can be substituted with a -CF3 group, a third alkyl group having 1 to 10 carbon atoms, phenyl, -COOH, -NO24-F, -C1, or -Bι :. Therefore, depending on the chemical properties of the cage structure, each number other than the four aromatic part may be attached to the cage structure. For example, when a relatively low degree of cross-linking through a cage structure is desired, 1 to 3 aromatic hydrocarbon moieties can be attached to the cage structure, of which the aromatic hydrocarbon moiety is -35 · 200408662

(29) 可以或不可以包含交聯用的反應性基團。在較佳為較高交 聯程度的情況下,4個及以上芳烴部分可接附至籠狀結構 物,其中所有或幾乎所有芳烴部分負載一個或超過一個反 /(29) It may or may not contain a reactive group for crosslinking. Where a higher degree of crosslinking is preferred, 4 or more aromatic hydrocarbon moieties may be attached to the cage structure, where all or almost all of the aromatic hydrocarbon moieties carry one or more than one anti /

應性基團。此外,可預期接附至中心蘢狀結構物的芳烴部 , 份可負載其他籠狀結構物,其中蘢狀結構物可相同於中心 籠狀結構物,或可完全不同。例如,預期單體可具有富勒 烯籠狀結構物以提供相當高數目的芳烴部分及芳烴部分 内的金鋼烷。因此,預期籠狀結構物可共價地鍵結至第一 與第二主鏈或超過二個主鏈。 I 關於芳烴部分的化學性質,可預期適當芳烴部分包含苯 基,更佳為苯基與反應性基團。例如,芳烴部分可包含二 苯乙炔或(苯基乙炔基苯基)基或經取代二苯乙炔,其中經 取代二苯乙炔可藉由碳-碳鍵或碳-非碳鍵包括雙鍵共價 地鍵結至二苯乙炔的附加苯基與乙炔基、醚、酮或酯基。Responsive group. In addition, it is expected that the aromatic hydrocarbon moiety attached to the center ridge structure may support other cage structures, where the ridge structure may be the same as the center cage structure, or may be completely different. For example, it is contemplated that the monomer may have a fullerene cage structure to provide a relatively high number of aromatics and adamantane within the aromatics. Therefore, it is expected that the cage structure can be covalently bonded to the first and second main chains or more than two main chains. With regard to the chemical nature of the aromatic hydrocarbon moiety, it is expected that a suitable aromatic hydrocarbon moiety contains a phenyl group, more preferably a phenyl group and a reactive group. For example, the aromatic moiety may comprise a diphenylacetylene or (phenylethynylphenyl) group or a substituted diphenylacetylene, wherein the substituted diphenylacetylene may include double bonds covalently through carbon-carbon bonds or carbon-non-carbon bonds Additional phenyl groups bonded to diphenylacetylene and ethynyl, ether, ketone or ester groups.

亦可預期具有垂懸籠狀結構物的單體,如圖7的實例所 示,其中二個金鋼烷用作垂懸基團。然而,須知垂懸籠狀 結構物不限於二個金鋼烷結構物。預期替代性籠狀結構物 I 包括任何化學合理组合的單一與多重經取代金剛烷基、金 鋼烷基及富勒烯。在希望特殊溶解度、氧化穩定性或其他 物理-化學特性的情況下,取代作用可導入籠狀結構物 内。因此,預期取代作用包括鹵素、烷基、芳基及烯基, _ 但亦包括官能與極性基團,包括酯類、酸性基、硝基與胺 基等。 亦須知主鏈不必相同。在替代性具體例的一些態樣中, -36- 200408662 (30) 可利周二個或以上化學上不同的主鏈以製造低介電常數 材料,只要替代性低介電常數材料包含具有芳烴部分的第 一與第二主鏈、反應性基團及共價地鍵結至主鏈的籠狀化 合物即可。 關於反應性基團,預期可使用除了乙炔基與四環鲷基以 外的反應性基團,只要替代性反應性基團可交聯第一與第 二主鏈而不用外成交聯劑即可。例如,適當反應性基團包 括苯并環丁烯基。在另一實例中,第一反應性基團可包含 親電物而第二反應性基團則可包含親核物。進一步預期反 應性基團的數目主要視(a)第一與第二反應性基團的反應 性,(b)第一與第二主鏈間的交聯強度及(c)低介電材料内 的所欲交聯程度而定。例如,當第一與第二反應性基團被 位阻時(例如,在二個衍生化苯基環間的乙炔基),需要相 當多數目的反應性基團以交聯二個主鏈至某種程度。同 樣,當相當弱的鍵如氫鍵或離子鍵形成在反應性基團之間 時,亦需要相當多數目的反應性基團以達到穩定交聯。 在一主鏈中的反應性基團可與另一主鏈中的相同反應 性基團反應的情況下,僅需要一種反應性基團。例如,位 於相同的二個不同主鏈上的乙炔基可在加成與環加成型 反應中反應以形成交聯結構物。 亦須知反應性基團的數目會影響分子間對分子内交聯 的比例。例如,反應性基團於第一與第二主鏈内的相當高 濃度,在二個主鏈的相當低濃度下會有利於分子内反應。 同樣,反應性基團於第一與第二主鏈内的相當低濃度,在 •37· 200408662 (31) 二個主鏈的相當高濃度下會有利於分子間反應。在分子内 與分子間反應的平衡亦會由主鏈間之不相同反應性基團 的分布影響。當希望分子間反應時,一種反應性基團可放 置在第一主鏈上,而另一種反應性基團可放置在第二主鏈 上。此外,當希望在不同條件下的按序交聯時(例如,二 種不同溫度),可使用附加第三與第四反應性基團。 然而,較佳主鏈的反應性基團在加成型反應中反應端視 替代性反應性基團的化學性質而定,亦可預期許多其他反 應,包括親核性與親電性取代作用或消除作用、游離基反 應等。此外,替代性反應亦可包括非共價鍵如靜電鍵、離 子鍵及氫鍵的形成。因此,交聯第一與第二主鏈會藉由形 成在可位在相同或二個主鏈上之相同或不相同反應性基 團間的共價或非共價鍵發生。 在替代性具體例的另一態樣中,籠狀結構物可包括除了 金剛烷包括金鋼烷、橋接冠狀醚、立方烷或富勒烯以外的 結構物,只要替代性籠狀結構物具有至少8個原子即可。 適當籠狀結構物的選擇係由籠狀結構物的所欲空間要求 程度決定。若較佳為相當小籠狀結構物時,單一金剛烷或 金鋼烷基團即足夠·。預期主鏈的結構物包括金剛烷與金鋼 烷基團顯示於圖8A與8B。大型籠狀結構物可包含富勒烯。 亦須知替代性主鏈不必限於單一型籠狀結構物。適當脊注 意可包含二個或五個籠狀結構物或其他分子與更多不相 同籠狀結構物。例如,富勒烯可加入聚合主鏈的一端或二 端,而金鋼烷基團則放入主鏈的其他部分。又預期衍生的 -38- 200408662 (32) 或多重籠狀結構物,包括低聚合與聚合的籠狀結構物,其 中希望更大型籠狀結構物。籠狀結構物的化學組合物不必 限於碳原子,須知替代性籠狀結構物可具有碳原子以外的/ 原子(即,雜原子),藉此預期雜原子可包括N,〇,P,S,B,- 等。 關於籠狀結構物的位置,預期籠狀結構物可在各種位置 連接至主鏈。例如,當希望遮蔽主鏈中的終端官能基或停 止形成主鏈的聚合反應時,籠狀結構物可用作端蓋。端蓋 的典型結構顯示於圖9A與9B。在希望大量籠狀結構物的其 I 他情況下,預期籠狀結構物為共價地連接至主鏈的垂懸結 構物。共價連結的位置可改變,主要視主鏈與籠狀結構物 的化學補充量而定。因此,適當共價連接會涉及連接分子 或官能基,而其他連接可為單或雙鍵。當籠狀基團為垂懸 基團時,特別預期超過一個主鏈可連接至籠狀結構物。例 如,單一籠狀結構物可連接至至少二個或三個或以上主 鏈。或者,預期籠狀基團可為主鏈的整合部分。Monomers with hanging cage structures are also contemplated, as shown in the example of Figure 7, where two adamantane are used as hanging groups. However, it should be noted that the hanging cage structure is not limited to two augustane structures. It is expected that alternative cage structures I include single and multiple substituted adamantyl, adamantane and fullerenes in any chemically sound combination. Where special solubility, oxidative stability, or other physical-chemical properties are desired, substitution can be introduced into the cage structure. Therefore, the expected substitutions include halogen, alkyl, aryl, and alkenyl, but also functional and polar groups, including esters, acidic, nitro, and amine groups. It should also be noted that the main chains need not be the same. In some aspects of the alternative specific example, -36- 200408662 (30) may benefit from two or more chemically different main chains to produce a low dielectric constant material, as long as the alternative low dielectric constant material includes an aromatic portion The first and second main chains, reactive groups, and cage-like compounds covalently bonded to the main chain are sufficient. As for the reactive group, it is expected that reactive groups other than the ethynyl group and the tetracyclic snapper group can be used, as long as the alternative reactive group can crosslink the first and second main chains without using an external crosslinking agent. For example, suitable reactive groups include benzocyclobutenyl. In another example, the first reactive group may include an electrophile and the second reactive group may include a nucleophile. It is further expected that the number of reactive groups depends mainly on (a) the reactivity of the first and second reactive groups, (b) the cross-linking strength between the first and second main chains, and (c) within the low dielectric material. Depends on the desired degree of crosslinking. For example, when the first and second reactive groups are sterically hindered (eg, ethynyl between two derivatized phenyl rings), a significant number of reactive groups are required to crosslink the two main chains to a certain Kind of degree. Also, when a relatively weak bond such as a hydrogen bond or an ionic bond is formed between the reactive groups, a considerable majority of the reactive groups are required in order to achieve stable crosslinking. In the case where a reactive group in one main chain can react with the same reactive group in another main chain, only one kind of reactive group is required. For example, ethynyl groups on the same two different backbones can react in addition and cycloaddition reactions to form crosslinked structures. It should also be noted that the number of reactive groups can affect the ratio of intermolecular to intramolecular cross-linking. For example, relatively high concentrations of reactive groups in the first and second backbones will facilitate intramolecular reactions at relatively low concentrations in the two backbones. Similarly, the relatively low concentration of reactive groups in the first and second backbones will facilitate intermolecular reactions at the relatively high concentrations of the two main chains. The balance of intra- and inter-molecular reactions is also affected by the distribution of different reactive groups between the main chains. When an intermolecular reaction is desired, one reactive group may be placed on the first main chain and the other reactive group may be placed on the second main chain. In addition, when sequential crosslinking under different conditions (for example, two different temperatures) is desired, additional third and fourth reactive groups may be used. However, the reactive end of the reactive group of the preferred backbone in the addition reaction depends on the chemical nature of the alternative reactive group, and many other reactions are also contemplated, including nucleophilic and electrophilic substitution or elimination Effect, free radical reaction, etc. In addition, alternative reactions may also include the formation of non-covalent bonds such as electrostatic, ion, and hydrogen bonds. Therefore, cross-linking of the first and second main chains occurs by forming covalent or non-covalent bonds between the same or different reactive groups which may be positioned on the same or two main chains. In another aspect of the alternative embodiment, the cage structure may include a structure other than adamantane including adamantane, bridging crown ether, cubic or fullerene, as long as the alternative cage structure has at least 8 atoms is enough. The choice of the appropriate cage structure is determined by the desired space requirement of the cage structure. When a relatively small cage-like structure is preferred, a single adamantane or adamantane group is sufficient. It is expected that the structure of the main chain including adamantane and auryl alkyl groups is shown in Figs. 8A and 8B. The large cage structure may contain fullerenes. It should also be noted that the alternative main chain need not be limited to a single cage structure. Appropriate ridge notes may include two or five cage structures or other molecules with more distinct cage structures. For example, fullerenes can be added to one or both ends of the polymerized main chain, while gold steel alkyl groups are placed in other parts of the main chain. Derivatives of -38- 200408662 (32) or multiple cage structures are also expected, including oligomeric and polymeric cage structures, of which larger cage structures are desired. The chemical composition of the cage structure need not be limited to carbon atoms, it is to be noted that alternative cage structures may have / atoms (ie, heteroatoms) other than carbon atoms, whereby it is expected that the heteroatoms may include N, 0, P, S, B,-etc. Regarding the position of the cage structure, it is expected that the cage structure may be connected to the main chain at various positions. For example, when it is desired to mask terminal functional groups in the main chain or stop the polymerization reaction that forms the main chain, a cage structure can be used as an end cap. The typical structure of the end cap is shown in Figures 9A and 9B. In other cases where a large number of cage structures are desired, the cage structure is expected to be a hanging structure covalently connected to the main chain. The location of the covalent linkage can vary, depending on the amount of chemical replenishment of the backbone and the cage structure. Therefore, a proper covalent connection would involve connecting molecules or functional groups, while other connections may be single or double bonds. When the cage group is a hanging group, it is particularly expected that more than one backbone can be attached to the cage structure. For example, a single cage structure can be linked to at least two or three or more backbones. Alternatively, it is contemplated that the cage group may be an integral part of the main chain.

現轉至圖10,顯示一種典型聚合物,其中第一主鏈10藉 I 由第一反應性基團G15與第二反應性基團G25交聯至第二 主鏈20,其中交聯導致共價鍵50。二主鏈分別具有至少一 個芳烴部分(圖未示)。複數個垂懸籠狀結構物30共價地鍵 結至第一與第二主鏈,第一主鏈10進一步具有終端蘢狀基 . 團32。終端籠狀基團32與垂懸·籠狀結構物30中至少一個負 載至少一個取代基R(40),其中取代基40可為鹵素、烷基 或芳基。籠狀結構物各包含至少8個原子。 -39- 200408662Turning now to FIG. 10, a typical polymer is shown, in which the first main chain 10 is crosslinked by the first reactive group G15 and the second reactive group G25 to the second main chain 20 by I, where the cross-linking results in Price key 50. Each of the two main chains has at least one aromatic moiety (not shown). A plurality of hanging cage structures 30 are covalently bonded to the first and second main chains, and the first main chain 10 further has a terminal fluorene group 32. At least one of the terminal cage group 32 and the hanging-cage structure 30 carries at least one substituent R (40), wherein the substituent 40 may be a halogen, an alkyl group, or an aryl group. The cage structures each contain at least 8 atoms. -39- 200408662

(33) 黏荖促進劑(b): 黏著促進劑之一為式(Rl8)f(R19)gSi(R2Q)h(R2i)#矽烷,其 中!^8’ Rm’Rm及RZ1各獨立代表氫、經基、不飽和或飽和 ’ 基、經取代或未經取代乾基,其中取代基為胺基或環氧,· 基’不飽和或飽和烷氧基、不飽和或飽和羧酸基或芳基, 其中R1S’ Rw’ Rzo及Rzl中至少二個代表氫、經基、飽和或 不飽和烷氧基、不飽和烷基或不飽和羧酸基;及f+g+h+I S4。其例包括乙烯矽烷如H2〇CHSi(CH3)2H與H2C=CHSi (R27)3 其中 R” 為 CH3〇,C2H5〇,AcO,H2C=CH,或 H2C=鲁 C(CH3)〇-,或乙烯苯基曱基矽烷;式H2C=CHCH2_Si(OC2H5)3 與H2C=CHCHrSi(H)(OCH3)2之締丙矽烷;縮水甘油氧基丙 基矽烷如(3-縮水甘油氧基丙基)甲基二乙氧基矽烷與(3-縮水甘油氧基丙基)三甲氧基矽烷;式h2o(ch3)co〇 (CH2)3-Si(〇R28)3之甲基丙烯氧基丙基矽烷,其中r28為烷 基’較佳為甲基或乙基;胺基丙基矽烷衍生物,包括 H2N(CH2)3Si(〇CH2CH3)3 ,H2N(CH2)3Si(OH)3 ,或 H2N(CH2)3 〇C(CH3)2CH=CHSi(〇CH3)3。上述石夕燒可商業上獲自Gelest公 司。 另一 $用黏著促進货丨為式- [R22C6H2(〇H)(R23)]j-的苯紛-曱醛樹脂或低聚物,其中r22為經取代或未經取代伸烷 基、環伸烷基、乙烯基、缔丙基或芳基;R23為烷基、伸 / 烷基、伸乙蹄基、環伸烷基、伸烯丙基或芳基;及j = 3-100。 4 有用烷基之例包括- CH2-及-(CH2)k-,其中k> 1。特別有用的 苯酚-甲醛樹脂或低聚物具有分子量為1500,商業上獲自 -40- 200408662 (34)(33) Adhesion promoter (b): One of the adhesion promoters is formula (R18) f (R19) gSi (R2Q) h (R2i) # silane, among them! ^ 8 'Rm'Rm and RZ1 each independently represent hydrogen, a hydroxyl group, an unsaturated or saturated' group, a substituted or unsubstituted dry group, wherein the substituent is an amine group or an epoxy group, and the · group is an unsaturated or saturated alkyl group. Oxy, unsaturated or saturated carboxylic acid group or aryl group, in which at least two of R1S 'Rw' Rzo and Rzl represent hydrogen, meridian, saturated or unsaturated alkoxy, unsaturated alkyl or unsaturated carboxylic acid group ; And f + g + h + I S4. Examples include ethylene silanes such as H2OCHSi (CH3) 2H and H2C = CHSi (R27) 3 where R "is CH3〇, C2H50, AcO, H2C = CH, or H2C = LuC (CH3) 〇-, or ethylene Phenylfluorenylsilane; formula H2C = CHCH2_Si (OC2H5) 3 and H2C = CHCHrSi (H) (OCH3) 2; allylsilane; glycidyloxypropyl silane such as (3-glycidyloxypropyl) Diethoxysilane and (3-glycidyloxypropyl) trimethoxysilane; methacryloxypropylsilane of the formula h2o (ch3) co0 (CH2) 3-Si (〇R28) 3, where r28 is alkyl ', preferably methyl or ethyl; aminopropylsilane derivatives, including H2N (CH2) 3Si (〇CH2CH3) 3, H2N (CH2) 3Si (OH) 3, or H2N (CH2) 3 〇C (CH3) 2CH = CHSi (〇CH3) 3. The above stone yaki is commercially available from Gelest. Another adhesion promotion product is the formula-[R22C6H2 (〇H) (R23)] j- Benzene-formaldehyde resin or oligomer, where r22 is substituted or unsubstituted alkylene, cycloalkylene, vinyl, allyl, or aryl; R23 is alkyl, alkyl / alkyl, alkyl Ethyl, cycloalkylene, allylic, or aryl; and j = 3-100. 4 Examples of useful alkyl groups include-CH2 -And- (CH2) k-, where k > 1. Particularly useful phenol-formaldehyde resins or oligomers have a molecular weight of 1500 and are commercially available from -40-200408662 (34)

Schenectady International公司。 另一有用黏著促進劑為縮水甘油醚,包括但不限於 1,1,卜參-(羥基苯基)乙烷三縮水甘油醚,商業上獲自 TriQuest公司。Schenectady International. Another useful adhesion promoter is glycidyl ether, including, but not limited to, 1,1, pshen- (hydroxyphenyl) ethane triglycidyl ether, commercially available from TriQuest.

另一有用黏著促進劑為含有至少一個羧酸基的不飽和 羧酸酯。其例包括三官能甲基丙烯酸酯、三官能丙烯酸 酯、三丙烯酸三羥曱基丙烷酯、五丙烯酸二季戊四醇及甲 基丙蹄酸縮水甘油i旨。以上商業上皆獲自Sartomer公司。 另一有用黏著促進劑為乙烯_基環狀吡啶低聚物或聚合 物,其中環狀基為p比啶、芳烴或雜芳烴。有用例包括但不 限於2-乙烯吡啶與4-乙烯吡啶,商業上獲自Reilly公司;乙 烯芳烴;及乙烯雜芳烴包括但不限於乙烯喹啉、乙烯卡巴 。坐、乙缔味峻及乙歸*。号σ坐。Another useful adhesion promoter is an unsaturated carboxylic acid ester containing at least one carboxylic acid group. Examples include trifunctional methacrylate, trifunctional acrylate, trihydroxymethylpropane triacrylate, dipentaerythritol pentaacrylate, and glycidyl methylpropionate. The above are commercially available from Sartomer. Another useful adhesion promoter is an ethylene-based cyclic pyridine oligomer or polymer, where the cyclic group is a p-pyridine, aromatic or heteroaromatic hydrocarbon. Useful examples include, but are not limited to, 2-vinylpyridine and 4-vinylpyridine, commercially available from Reilly; ethylene aromatic hydrocarbons; and ethylene heteroaromatics including, but not limited to, ethylene quinoline and ethylene carba. Sit, Yijun Weijun and Yigui *. No. σ sat.

較佳黏著促進劑(b)為聚碳矽烷,揭示於共同讓渡申請 中美國專利申請案系列號09/471299,1999年12月23日申請, 其全部併入本文供參考。聚碳矽烷為式(I): Η I Si- R9 r8- a R10 -Si—A preferred adhesion promoter (b) is polycarbosilane, which is disclosed in the Common Assignment US Patent Application Serial No. 09/471299, filed on December 23, 1999, all of which are incorporated herein by reference. Polycarbosilane is of formula (I): Η I Si- R9 r8- a R10 -Si—

Rn b 〒12 Si—R14-〇—R13Rn b 〒12 Si-R14-〇-R13

Rl5Si —Rl7· r16 d 其中Rs,R14及R17各獨立代表經取代或未經取代伸烷基、 環伸烷基.、伸乙·歸基、伸缔丙基或伸芳基;R9,R1(),Rn, -41 - 200408662Rl5Si —Rl7 · r16 d where Rs, R14 and R17 each independently represent a substituted or unsubstituted alkylene, cycloalkylene, ethylene, naphthyl, allylic or aryl; R9, R1 ( ), Rn, -41-200408662

(35) R12,R15及R16各獨立代表氫原子或包括燒基、伸燒基、乙 烯基、環烷基、烯丙基或芳基之有機基並可為直鏈或支 鏈;R i 3代表有機碎、碎燒基、碎氧基或有機基;及a,b, ' c與d符合[4<a+b+c+dS 100,000]的條件,及b與c與d可共同或 ’ 獨立為零。有機基可包含最多18個碳原子但通常包含約1 至約10個碳原子。有用烷基包括- CH2-及-(CH2)e-,其中e〉l。 本發明之較佳聚碳矽烷包括二氫聚碳矽烷,其中Rs代表 經取代或未經取代伸烷基或苯基,R9基為氫原子且在聚碳 矽烷鏈中無附屬基;即,b,c及d皆為零。另一較佳聚碳 籲 矽烷基團為該等基團,其中式(I)之R9,R10,Ru,R12,R15 及R16基為具有2至10個碳原子之經取代或未經取代缔 基。烯基可為乙烯基、丙烯基、晞丙基、丁烯基或任何具 有最多10個竣原子的不飽和有機主鏈基。蹄基本質上可為 二烯基並包括附屬或取代在不同烷基或不飽和有機聚合 物主鏈上的不飽和烯基。此等較佳聚碳矽烷之例包括二氫 或烯基取代的聚碳矽烷如聚二氫碳矽烷、聚烯丙基氫碳矽 烷及聚二氫碳矽烷與聚缔丙基氫碳矽烷之無規共聚物。 ® 在更佳聚碳矽烷中,式1的R9基為氫原子而R8為亞甲 基,附屬基b,C與d為零。其他本發明較佳聚碳矽烷化合 物為式1的聚碳矽烷,其中R9與R15為氫而118與r17為亞甲 基,R16為烯基及附屬基b與c為零。聚碳矽烷可自先行技 / 藝製備或由聚碳矽烷組合物的廠商提供。在最佳聚碳矽烷 、 中,式(I)的R9基為氫原子而Rs為-CH2-;附屬基b,c與d=0 而a= 5-25。此等最佳聚後石夕院可獲自Starfire Systems公司。 -42· 200408662(35) R12, R15, and R16 each independently represent a hydrogen atom or an organic group including an alkyl group, an alkylene group, a vinyl group, a cycloalkyl group, an allyl group, or an aryl group, and may be linear or branched; R i 3 Represents organic crushed, crushed alkoxy, crushed oxy or organic groups; and a, b, 'c and d meet the conditions of [4 < a + b + c + dS 100,000], and b and c and d may be common Or 'independently zero. Organic groups can contain up to 18 carbon atoms but typically contain about 1 to about 10 carbon atoms. Useful alkyl groups include -CH2- and-(CH2) e-, where e> l. The preferred polycarbosilanes of the present invention include dihydropolycarbosilanes, where Rs represents a substituted or unsubstituted alkylene or phenyl group, the R9 group is a hydrogen atom and there are no auxiliary groups in the polycarbosilane chain; that is, b , C and d are all zero. Another preferred polycarbosilyl group is such a group, wherein the R9, R10, Ru, R12, R15 and R16 groups of the formula (I) are substituted or unsubstituted groups having 2 to 10 carbon atoms. base. The alkenyl group may be a vinyl group, a propenyl group, an amidino group, a butenyl group, or any unsaturated organic backbone group having up to 10 atoms. The hooves may be dienyl in nature and include unsaturated alkenyl groups attached or substituted on the main chain of different alkyl or unsaturated organic polymers. Examples of such preferred polycarbosilanes include dihydro or alkenyl-substituted polycarbosilanes such as polydihydrocarbon silanes, polyallyl hydrocarbon silanes, and polydihydrocarbon silanes and polyallylhydrocarbon silanes. Tactic copolymer. ® In a more preferred polycarbosilane, the R9 group of Formula 1 is a hydrogen atom and R8 is a methylene group, and the subsidiary groups b, C, and d are zero. Other preferred polycarbosilane compounds of the present invention are polycarbosilanes of formula 1, wherein R9 and R15 are hydrogen and 118 and r17 are methylene, R16 is alkenyl and the subsidiary groups b and c are zero. Polycarbosilanes can be prepared from prior art / technology or provided by manufacturers of polycarbosilane compositions. In the best polycarbosilanes, the R9 group of formula (I) is a hydrogen atom and Rs is -CH2-; the subgroups b, c and d = 0 and a = 5-25. These best-in-class Shi Xi Yuans are available from Starfire Systems. -42. 200408662

(36) 此等最佳聚碳矽烷的特定例如下: 聚碳矽烷 重量平均分子量 多分散性 尖學分子量(Mp) 1 400-1,400 2-2.5 330-500 2 330 1.14 320 3(具有10%烯丙基) 10,000-14,000 10.4-16 1160 4(具有75%烯丙基) 2,400 3.7 410 由式(I)可知,本發明所用的聚碳矽烷,當c>0時,可包 含碎氧基形式的氧化基。因此,當c>0時,Rn代表有機碎、 矽烷基、矽氧基或有機基。須巧聚碳矽烷的氧化部分Cc>0) 在本發明之範圍内操作極有效。同樣可知,c可為〇而與a, b及d無關,僅有條件為式1聚碳矽烷的基a,b,c及d必須 符合[4<a+b+c+d< 100,000]的條件,及b與c可共同或獨立為 零。 本發明之聚碳矽烷較佳以些許有效量基於本發明熱固 性組合物(a)重量約0.5%至20%加入,通常更佳為最多约5.0 重量%組合物之量加入。 聚碳矽烷可自目前從許多廠商可得的原料並使用傳統 聚合方法製成。關於聚碳矽烷合成之例,原料可自普通有 機矽烷化合物或自聚矽烷作為原料,藉加熱聚矽烷與聚硼 矽氧烷的摻合物於!性氣壓内以產生對應聚合物,或藉加 熱聚矽烷與低分子量碳矽烷的摻合物於惰性氣壓内以產 生對應聚合物,或藉加熱聚矽烷與低分子量碳矽烷的摻合 物於惰性氣壓内並在觸媒如聚硼二苯基矽氧烷存在下以 產生對應聚合物而製成。聚碳矽烷亦可藉格里納德反應合 -43 · 200408662 (37) 成,紀錄於美國專利5,153,295,併入本文供參考。 藉組合較佳聚碳矽烷與熱固性組份(a)或聚合物並使組 合物受熱或高能源,所得組合物具有優異黏著特性遍及整 ' 個聚合物,俾可確保對任何塗膜接觸表面的親合性。本發 * 明聚碳矽烷亦可改良條痕控制、黏度及薄膜均勾度。目視 檢查證實改良條痕控制的存在。 本發明組合物亦可包含附加組份如附加黏著促進劑、抗 發泡劑、清潔劑、阻燃劑、顏料、塑化劑、安定劑及界面 活性劑。 着 實用性 本發明熱固性組份(a)與黏著促進劑(b)的組合物可與其 他特定添加劑組合以得特定結果。該添加劑的代表例為含 金屬化合物如磁性粒子,例如,鋇鐵氧體、氧化鋇,視需 要在與鈷的混合物内,或其他含金屬粒子,用於磁性媒介 物、光學媒介物或其他紀錄媒介物;導電粒子如金屬或 碳,用作導電密封劑;導電黏著劑;導電塗膜;電磁干擾 (EMI)/射頻(RFI)屏蔽塗膜;靜電耗散劑;及電觸點。當使 < 用此等添加劑時,本發明組合物可作為黏合劑β本發明組 合物亦可對製造、儲存或使用環境提供保護作用如作為塗 膜以對金屬、半導體、電容器、感應器、導體、太陽電池、 玻璃與玻璃纖維、石英及石英纖維提供表面鈍化作用。 本發明熱固性組份(a)與黏著促進劑(b)的組合物亦可用 於密封墊與墊圈,較佳作為密封墊或墊圈之層,例如環繞 紗布,亦可單獨使用。此外,組合物亦可用於防污塗膜, -44 - 200408662 (38) 針對物體如船隻零件;電開關包覆物;浴缸與蓬頭塗膜; 於防霉塗膜内;或對物體提供阻燃性、耐候性或防水性。 由於本發明組合物之耐溫的範圍,本發明組合物可塗佈在 低溫容器、熱壓器及爐上,以及在熱交換及其他加熱或冷 卻表面上以及暴露至微波輻射的物體上。 本發明熱固性組份(a)與黏著促進劑(b)的組合物亦可用 介電材料。介電材料較佳具有介電常數k為低於3.0。 本發明熱固性組份(a)與黏著促進劑(b)的組合物層可藉 溶液技術如噴霧、輾壓、滴液、旋塗、流塗或鑄造形成, 其中對微電子而言,以旋塗較佳。本發明組合物最好溶解 於溶劑内。用於該本發明組合物的溶液的適當溶劑包括任 何在所欲溫度下可揮發的純粹有機、有機金屬或無機分子 或其混合物。適當溶劑包括非質子溶劑,例如,環狀酮類 如環戊酮、環己酮、環庚酮及環辛酮;環狀醯胺如N-烷 基吡咯烷酮,其中烷基具有約1至4個碳原子;與N-環己 基吡咯烷酮及其混合物。亦可使用其他有機溶劑,只要其 可幫助黏著促進劑的溶解,同時可有效地控制所得溶液作 為塗佈溶液的黏度即可。各種便利措施如攪捽及/或加熱 可用以幫助溶解。其他適當溶劑包括甲基乙基酮、曱基異 丁基酮、二丁醚、環狀二曱基聚矽氧烷、丁内酯、7 - 丁 内酯、2-庚烷酮、3 -乙氧丙酸乙酯、聚乙二醇曱醚、聚丙 二醇甲醚、醋酸酯、均三甲苯、苯曱醚及烴溶劑如二甲苯、 苯及甲苯。較佳溶劑為環己酮。通常,層厚度在〇. 1至約 15微米之間。作為微電子的介電夾層,層厚度通常為低於 -45 - 200408662 (39) 2微米。 熱固性組份(a)與黏著促進劑(b)及溶劑的組合物最好在 溫度為約30至約350°C下處理約0.5至約60小時。此處理通 常形成熱固性組份(a)與黏著促進劑(b)的低聚物,如GPC 所證實。 本發明組合物可用於電氣裝置,特定而言,作為與單一 積體電路(“ICn)晶片相關的互連物中的夾層介電質。積體 電路晶片的表面上通常具有若干層本發明組合物以及多 層金屬導體。其亦可包括本發明組合物在不同金屬導體間 的區域或導體在積體電路的相同層或層次内的區域。 在本發明聚合物之應用至ICs中,本發明組合物的溶液 係使用傳統濕塗法如旋塗塗敷至半導體晶圓;在特定情況 下,亦可使用其他習知塗佈技術如噴塗或流塗。作為例 示,本發明組合物的環己酮溶液旋塗在其内裝有導電组份 的基材上,然後使塗佈過的基材受熱加工。本發明組合物 的典型調配物係在周圍條件下,嚴格配合操作清潔規定以 防任何傳統具有非金屬襯底的裝置中痕量金屬污染,溶解 本發明組合物於環己酮溶劑内製備。所得溶液,基於全部 溶液重量,包含較佳為約1至約50重量%熱固性組份(a)與 黏著促進劑(b)及約50至約99重量%溶劑,更佳為約3至約 20重量%熱固性組份(a)與黏著促進劑(b)及約80至約97重 量%溶劑。 - 本發明之用途例示如下。本發明組合物之應用以形成一 層在平面或地形表面或基材上可藉使用任何傳統裝置較 • 46- 200408662 (40) 佳為旋塗器實施,因為此處所周的組合物具有適於該塗佈 器的控制黏度。溶劑的蒸發可使用任何適當手段,例如, 在旋塗時之簡單空氣乾燥、暴露至周圍環境或在熱板上加 / 熱高達350°C。基材可具有至少二層熱固性組份(a)與黏著 / 促進劑(b)之本發明組合物。 本文所預期的基材可包含任何所欲實質上固體材料。特 別基材層包括薄膜、玻璃、陶瓷、塑料、金屬或塗佈過金 屬或複合金屬。在較佳具體例中,基材包括矽或砷化鎵晶 粒或晶圓表面,包裝表面如發現於銅、銀、鎳或鍍金鉛框,® 銅表面如發現於電路板或包裝互連軌線、通路壁或加固界 面(“銅”包括考慮裸銅及其氧化物),聚合物基底包裝物或 板界面如發現於聚醯胺基底彎曲包裝,鉛或其他金屬合金 焊球表面、玻璃及聚合物。在更佳具體例中,基材包含共 用於包裝與電路板工業的材料如矽、銅、玻璃及聚合物。 本發明組合物亦可用作微晶片、多晶片模組體、層壓電路 板或印刷線路板的介電基材。由本發明組合物構成的電路 板可安裝在其表面圖案上供各種導電體電路用。電路板可胃 包括各種補強物如編織非導電纖維或玻璃布。該電路板可 為單側及雙側。 由本發明組合物製成的層具有低介電常數、高熱穩定 性、高機械強度及對電子基材表面包括矽、氮化矽、氧化 : 矽、含氧碳化矽、二氧化矽、碳化矽、含氧氮化矽、氮化 , 鈥、氮化担、氮化爲、銘、銅、赵、有機咬氧垸、有機碎 玻璃及·氟化矽玻璃優異黏著性。因為黏著促進劑被分子方 -47- 200408662(36) Specific examples of these optimal polycarbosilanes are as follows: polycarbosilane weight average molecular weight polydispersity acuity molecular weight (Mp) 1 400-1,400 2-2.5 330-500 2 330 1.14 320 3 (with 10% olefin (Propyl) 10,000-14,000 10.4-16 1160 4 (with 75% allyl) 2,400 3.7 410 It can be known from the formula (I) that the polycarbosilane used in the present invention, when c > 0, may contain a form of broken oxygen. Oxidizing group. Therefore, when c > 0, Rn represents an organic group, a silyl group, a siloxy group, or an organic group. It should be noted that the oxidized part Cc of the polycarbosilane is effective within the scope of the present invention. It can also be known that c can be 0 and has nothing to do with a, b, and d. The only condition is that the groups a, b, c, and d of the polycarbosilane of formula 1 must meet [4 < a + b + c + d < 100,000]. Conditions, and b and c may be zero together or independently. The polycarbosilane of the present invention is preferably added in a slightly effective amount of about 0.5% to 20% based on the weight of the thermosetting composition (a) of the present invention, and usually more preferably in an amount of up to about 5.0% by weight of the composition. Polycarbosilanes can be made from raw materials currently available from many manufacturers and using conventional polymerization methods. Regarding the example of the synthesis of polycarbosilane, the raw material may be a common organic silane compound or a self-polymer silane as a raw material, by heating a blend of polysilane and polyborosiloxane! To produce the corresponding polymer within the air pressure, or by heating the blend of polysilane and low molecular weight carbosilane in an inert gas pressure, or by heating the blend of polysilane and low molecular weight carbosilane to the inert gas pressure. It is produced in the presence of a catalyst such as polyborodiphenylsiloxane to produce a corresponding polymer. Polycarbosilanes can also be synthesized by Grinard reaction -43 · 200408662 (37), which is recorded in US Patent No. 5,153,295, which is incorporated herein by reference. By combining the preferred polycarbosilane with the thermosetting component (a) or the polymer and subjecting the composition to heat or high energy, the resulting composition has excellent adhesive properties throughout the entire polymer, and can ensure that any coating film contacting the surface Affinity. The hair * Ming polycarbosilane can also improve the streak control, viscosity and film uniformity. Visual inspection confirmed the existence of improved streak control. The composition of the present invention may also contain additional components such as additional adhesion promoters, anti-foaming agents, detergents, flame retardants, pigments, plasticizers, stabilizers and surfactants. Practicality The composition of the thermosetting component (a) and the adhesion promoter (b) of the present invention can be combined with other specific additives to obtain specific results. Representative examples of this additive are metal-containing compounds such as magnetic particles, for example, barium ferrite, barium oxide, if necessary in a mixture with cobalt, or other metal-containing particles, for magnetic media, optical media or other records Media; conductive particles such as metal or carbon used as conductive sealants; conductive adhesives; conductive coatings; electromagnetic interference (EMI) / radio frequency (RFI) shielding coatings; static dissipatives; and electrical contacts. When using these additives, the composition of the present invention can be used as an adhesive β. The composition of the present invention can also provide protection to the environment for manufacturing, storage or use, such as a coating film for metals, semiconductors, capacitors, inductors, Conductors, solar cells, glass and glass fibers, quartz and quartz fibers provide surface passivation. The composition of the thermosetting component (a) and the adhesion promoter (b) of the present invention can also be used in gaskets and gaskets, preferably as a layer of gaskets or gaskets, such as wrapping gauze, or can be used alone. In addition, the composition can also be used in antifouling coating films, -44-200408662 (38) for objects such as ship parts; electrical switch coverings; bathtub and bonnet coating films; in mold resistant coating films; or to provide resistance to objects Flammability, weather resistance or water resistance. Due to the temperature resistance range of the composition of the present invention, the composition of the present invention can be coated on low-temperature containers, autoclaves, and furnaces, as well as on heat exchange and other heated or cooled surfaces, and on objects exposed to microwave radiation. The composition of the thermosetting component (a) and the adhesion promoter (b) of the present invention may also be a dielectric material. The dielectric material preferably has a dielectric constant k of less than 3.0. The composition layer of the thermosetting component (a) and the adhesion promoter (b) of the present invention can be formed by solution technology such as spraying, rolling, dripping, spin coating, flow coating, or casting. Coated better. The composition of the present invention is preferably dissolved in a solvent. Suitable solvents for the solution of the composition of the invention include any pure organic, organometallic or inorganic molecules or mixtures thereof that are volatile at the desired temperature. Suitable solvents include aprotic solvents, for example, cyclic ketones such as cyclopentanone, cyclohexanone, cycloheptanone, and cyclooctanone; cyclic amines such as N-alkylpyrrolidone, in which the alkyl group has about 1 to 4 Carbon atom; with N-cyclohexylpyrrolidone and mixtures thereof. Other organic solvents can also be used, as long as it can help the dissolution of the adhesion promoter and can effectively control the viscosity of the resulting solution as a coating solution. Various convenient measures such as stirring and / or heating can be used to help dissolve. Other suitable solvents include methyl ethyl ketone, fluorenyl isobutyl ketone, dibutyl ether, cyclic difluorenyl polysiloxane, butyrolactone, 7-butyrolactone, 2-heptanone, 3-ethyl Ethyl oxypropionate, polyethylene glycol ether, polypropylene glycol methyl ether, acetate, mesitylene, phenyl ether and hydrocarbon solvents such as xylene, benzene and toluene. A preferred solvent is cyclohexanone. Generally, the layer thickness is between 0.1 to about 15 microns. As a microelectronic dielectric interlayer, the layer thickness is usually less than -45-200408662 (39) 2 microns. The composition of the thermosetting component (a) with the adhesion promoter (b) and the solvent is preferably treated at a temperature of about 30 to about 350 ° C for about 0.5 to about 60 hours. This treatment usually forms oligomers of thermosetting component (a) and adhesion promoter (b), as demonstrated by GPC. The composition of the present invention can be used in electrical devices, in particular, as an interlayer dielectric in interconnects associated with a single integrated circuit ("ICn) wafer. Integrated circuit wafers typically have several layers of the present invention on their surface And multilayer metal conductors. It can also include areas of the composition of the invention between different metal conductors or areas of the conductors within the same layer or layer of the integrated circuit. In the application of the polymers of the invention to ICs, the combination of the invention The solution of the substrate is applied to a semiconductor wafer using a conventional wet coating method such as spin coating; in certain cases, other conventional coating technologies such as spray coating or flow coating may also be used. As an example, cyclohexanone of the composition of the present invention The solution is spin-coated on a substrate containing a conductive component therein, and then the coated substrate is subjected to thermal processing. A typical formulation of the composition of the present invention is strictly in accordance with the operating conditions under ambient conditions to prevent any traditional Trace metal contamination in a device with a non-metallic substrate is prepared by dissolving the composition of the present invention in a cyclohexanone solvent. The resulting solution, based on the total solution weight, preferably contains 1 to about 50% by weight of the thermosetting component (a) and the adhesion promoter (b) and about 50 to about 99% by weight of the solvent, more preferably about 3 to about 20% by weight of the thermosetting component (a) and the adhesion promoter ( b) and about 80 to about 97% by weight solvent.-The application of the present invention is exemplified as follows. The application of the composition of the present invention to form a layer on a flat or terrain surface or substrate can be made by using any conventional device. 46- 200408662 ( 40) It is best implemented by a spin coater because the composition here has a controlled viscosity suitable for the applicator. Evaporation of the solvent can be by any suitable means, such as simple air drying during spin coating and exposure to the surroundings Environment or heating / heating up to 350 ° C. The substrate may have at least two layers of the composition of the present invention with a thermosetting component (a) and an adhesion / promoter (b). The substrates contemplated herein may include any Desirable substantially solid materials. Special substrate layers include thin films, glass, ceramics, plastics, metals or coated metals or composite metals. In preferred embodiments, the substrate includes silicon or gallium arsenide grains or wafers Surface, packaging surface if found in copper, Silver, nickel, or gold-plated lead frames, with copper surfaces found on circuit board or packaging interconnect traces, via walls, or reinforced interfaces ("copper" includes consideration of bare copper and its oxides), polymer-based packaging or board interfaces If found on a polyimide-based curved package, the surface of lead or other metal alloy solder balls, glass, and polymers. In a more specific example, the substrate includes materials commonly used in the packaging and circuit board industries such as silicon, copper, glass, and Polymer. The composition of the present invention can also be used as a dielectric substrate for microchips, multi-chip modules, laminated circuit boards or printed wiring boards. A circuit board composed of the composition of the present invention can be mounted on its surface pattern For various conductive circuits. The circuit board can include various reinforcements such as woven non-conductive fibers or glass cloth. The circuit board can be one-sided and two-sided. The layer made of the composition of the invention has a low dielectric constant and high heat. Stability, high mechanical strength and the surface of electronic substrates include silicon, silicon nitride, oxide: silicon, oxygen-containing silicon carbide, silicon dioxide, silicon carbide, silicon-oxynitride, nitride, "Nitride, Nitriding , Ming, copper, Zhao, organic oxygen bite embankment, excellent adhesion and - a fluorinated organic silicon cullet glass. Because the adhesion promoter is molecular -47- 200408662

(41) 式分散,所以此等層證實對所有包括基材下方及加蓋或遮 蓋層上方如3丨〇2與Si3N4加蓋層的固定表面具有優異黏著 性。此等層的使用可消除附加加工步騾以至少一種塗底漆 應用以達到薄膜黏著至基材及/或覆蓋表面形式的需求。 在本發明塗敷致電子地形基材後,塗佈過結構在增加溫 度範圍為約50°C至約450°C下受烘培與固化熱法以聚合塗 膜。固化溫度為至少約300°C ,因為較低溫度不足以完成 反應。通常,固化較佳在溫度為約375°C至約425°C下實 施。固化可在傳統固化室如電爐、加熱板等内實施,且通 常在固化室内於惰性(非氧化)氣壓(氮氣)中實施。任何非 氧化或減少氣歷:(例如,氬、氦、氫及氮加工氣體)可用以 實施本發明,若其有效進行本發明有機矽改質的熱固性組 份(a)或聚合物的固化以達成此低k介電層。 雖不解釋為限制性,可推測本發明低介電常數組合物的 熱加工導致熱固性組份(a)與黏著促進劑(b)的交聯網絡。 基本上,本發明組合物的熱加工造成較佳聚碳矽烷黏著促 進劑(b)的矽烷部份轉化成亞甲矽基/曱矽烷基,然後其與 熱固性組份(a)的不飽和結構及基材表面反應,藉此產生 化學鍵結黏附界面供主要熱固性單體(a)前軀體,以此等 亞曱矽基/甲矽烷基為遍及組合物可得,以作為接附源以 藉其間的化學鍵結扣緊並固定任何觸點的界面表面。此反 應亦會在層形成前在調配或處理期間發生。如所示,此游 離基遍及組合物的分散視為此層極佳黏著至下方基材表 面以及覆蓋表面結構物如加蓋或遮蓋層。本文所示的材料 -48 - 200408662(41) type dispersion, so these layers proved to have excellent adhesion to all fixed surfaces including the substrate and above the cap or cover layer such as 3 〇 02 and Si3N4 cap layer. The use of these layers eliminates the need for additional processing steps to be applied with at least one primer to achieve film adhesion to the substrate and / or covering surface. After the application of the electronic terrain-forming substrate according to the present invention, the coated structure is subjected to baking and curing thermal methods to polymerize the coating film at an increased temperature range of about 50 ° C to about 450 ° C. The curing temperature is at least about 300 ° C because lower temperatures are not sufficient to complete the reaction. Generally, curing is preferably performed at a temperature of about 375 ° C to about 425 ° C. Curing can be carried out in traditional curing chambers such as electric furnaces, heating plates, etc., and is usually carried out in an inert (non-oxidizing) gas pressure (nitrogen) in the curing chamber. Any non-oxidizing or reduced gas calendar: (eg, argon, helium, hydrogen, and nitrogen process gases) can be used to implement the invention if it is effective to cure the silicone-modified thermosetting component (a) or polymer of the invention to This low-k dielectric layer is achieved. Although not to be construed as limiting, it is speculated that the thermal processing of the low dielectric constant composition of the present invention results in a crosslinked network of the thermosetting component (a) and the adhesion promoter (b). Basically, the thermal processing of the composition of the present invention results in the conversion of the silane portion of the preferred polycarbosilane adhesion promoter (b) to a methylenesilyl / fluorenylsilyl group, which is then unsaturated with the thermosetting component (a). It reacts with the surface of the substrate to generate a chemically bonded adhesion interface for the main thermosetting monomer (a) precursor. Such arylene / silyl groups are available throughout the composition as a source of attachment to borrow The chemical bond fastens and secures the interface surface of any contact. This reaction can also occur during the formulation or processing before the layer is formed. As shown, the dispersion of this free radical throughout the composition is considered to be an excellent adhesion of this layer to the surface of the underlying substrate and to cover surface structures such as a capping or covering layer. Materials shown in this article -48-200408662

(42) 極重要的發現是較佳式1聚碳矽烷黏著促進劑在聚碳矽烷 的主鏈結構物中具有反應性氫化基取代的矽。此聚碳矽烷 的特性使之可:(1)與熱固性組份(a)反應及;(2)產生聚 碳矽烷改質的熱固性组份(a),其具有改良的黏著性能。 所得層具有低介電常數k,本文界定為3.0或以下。此等 層證實對平面或地形半導體表面或基材有良好黏著性。 如前所示,本發明聚碳矽烷改質的熱固性組份(a)或聚 合物塗膜可作為夹層並由其他塗膜覆蓋,例如,其他介電 質(Si〇2)塗膜、Si〇2&質的陶瓷氧化物層、含矽塗膜、含 矽碳塗膜、含矽氮塗膜、含矽-氮-碳塗膜、金剛石狀碳塗 膜、氮化鈦、氮化钽、氮化鎢、鋁、銅、鈕、有機矽氧烷、 有機矽玻璃及氟化矽玻璃。該多層塗膜教示於美國專利 4,973,526,其併入本文供參考。如前所充分證實,此法所 製備的本發明聚碳矽烷改質的熱固性組份(a)可在製造的 電子或半導體基材上輕易形成為行間介電層在鄰接導體 路徑之間。 本發明薄膜可用於銅雙波紋加工或基材金屬(如鋁)加 工供積體電路製造。本發明組合物可用於所欲皆旋壓堆積 膜,如揭示於Michael E.Thomas,π低keff介電質之旋壓堆積 膜 n,Solid State Technologyf 200 1 7月),其全部併入本文供 參考。 實例 分析試驗法: 質子NMR : 將欲分析的2-5毫克樣品材料放入NMR管 -49- 200408662 (43) 内。加入约0.7毫升氘化氯仿。用手搖動混合物以溶解材 料。然後,使用Varian 400 MHz NMR分析樣品。 高十生能液態層析術(HPLC): 使用具有Phenomenex lima苯 基-己基250x4.6毫米管柱之HPLC。管柱溫度設定在40°C。 使用水與乙腈以改良尖峰分離。 時間 永 乙腈 最初 20% 80% 10分鐘 0% 100% 30分鐘 0% 100% 使用下列實驗條件: 注射體積 10微升 偵測 在200微米下紫外線 停止時間 30分鐘 後時間 5分鐘 樣品製備如下。 關於齒化中間體的混合物如實例5之1,3,5,7-肆(3/4-溴苯 基)金剛烷與1,3/4-雙[lf,3f,5、參(3π/4’’-溴苯基)金剛烷基]苯 的混合物,用大約4% HC1(若干毫升)搖動反應混合物(0.5-1 毫升)。用水搖動有機層。取出有機層樣品(20微升)並加入 乙腈(1毫升)。 一 關於最後產物的混合物如實例5之1,3,5,7-肆[37小-(苯基 乙炔基)苯基]金剛烷與1,3/4-雙{ Γ,3*,5’-參[3"/4’’-(苯基乙 炔基)苯基]金剛烷基}.苯的混合物,用氯仿(5毫升)與3-5% …HC1 (5毫升)混合反應混合物(0.5克)並搖動之。用水洗滌有 -50- 200408662 (44) 機層。有機層樣品(100微升)加入四氫咬喃(〇·9毫升)内。 凝膠滲透層析術iGPC) : GPC分析係用由Water 717加 Autosampler,Waters管線内脫氣器,Waters 515 HPLC^,Waters 410差示折射計(RI偵測器)及二個管柱·· HP PI凝膠5μ MIXED D所構成的Waters液態層析系統完成。分析條件為: 流動相 四氫呋喃(THF) 管柱流動(毫升/分鐘) 1.0 管柱溫度(°c) 40.0 檢測 折射指數,極性負電 分析運轉時間 25分鐘 注射量(微升) 50 樣品(1 0毫克)係藉加入四氫呋喃(1毫升)製備。 質量光譜學(MS):此分析係在具有大氣壓力離子化(API) 介面單元,使用Hewlett-Packard系列1050 HPLC系統作為層 析入口之Finnigan/MAT TSQ7000三階段四極質量光譜計系 統上進行。對時間位強度層析譜可得質量離子電流與可變 單一波長UV數據。 在Phenomenex Luna 5微米苯基己基管柱(250x4.6毫米)上 進行層析術。樣品自動注射通常為10或20微升濃縮溶液於 四氫咬喃内與無四氫咬喃。流過管柱的流動相為1 · 0微升/ 分鐘乙腈/水,最初70/30歷5分鐘,然後在15分鐘規劃成 1 00%乙腈並保持直到1 00分鐘為止(長於自管柱徹底洗提 材料實際所需)。以正電與負電模式交替地紀錄大氣壓力 化學離子化(APCI)質量光譜。APCI電暈放電為5微安,對 •51 · 200408662(42) A very important finding is that the preferred polycarbosilane adhesion promoter of formula 1 has reactive hydrogen-substituted silicon in the polycarbosilane main chain structure. The characteristics of this polycarbosilane include: (1) reacting with the thermosetting component (a) and; (2) producing a thermosetting component modified with a polycarbosilane (a), which has improved adhesion properties. The resulting layer has a low dielectric constant k, which is defined herein as 3.0 or below. These layers demonstrate good adhesion to planar or topographic semiconductor surfaces or substrates. As shown previously, the polycarbosilane modified thermosetting component (a) or polymer coating film of the present invention can be used as an interlayer and covered with other coating films, for example, other dielectric (Si02) coating films, Si 〇2 & quality ceramic oxide layer, silicon-containing coating film, silicon-carbon coating film, silicon-nitrogen coating film, silicon-nitrogen-carbon coating film, diamond-like carbon coating film, titanium nitride, tantalum nitride, Tungsten nitride, aluminum, copper, buttons, organosilicon, organosilicon glass and fluorinated silica glass. This multilayer coating film is taught in U.S. Patent 4,973,526, which is incorporated herein by reference. As fully confirmed before, the polycarbosilane-modified thermosetting component (a) of the present invention prepared by this method can be easily formed as an inter-line dielectric layer between adjacent conductor paths on a manufactured electronic or semiconductor substrate. The film of the present invention can be used for copper double corrugation processing or substrate metal (such as aluminum) processing for the production of integrated circuit. The composition of the present invention can be used for spin-stacked films as desired, as disclosed in Michael E. Thomas, spin-packed films of π low-keff dielectric, Solid State Technology f 200 1 July), all of which are incorporated herein by reference reference. Examples Analytical test method: Proton NMR: Put 2-5 mg of sample material to be analyzed into NMR tube -49- 200408662 (43). Add about 0.7 ml of deuterated chloroform. Shake the mixture by hand to dissolve the material. The samples were then analyzed using Varian 400 MHz NMR. High Decade Energy Liquid Chromatography (HPLC): HPLC using a Phenomenex lima phenyl-hexyl 250x4.6 mm column. The column temperature was set at 40 ° C. Water and acetonitrile were used to improve spike separation. Time Yong Acetonitrile Initial 20% 80% 10 minutes 0% 100% 30 minutes 0% 100% The following experimental conditions were used: Injection volume 10 μl Detection UV at 200 μm Stop time 30 minutes After 5 minutes Sample preparation is as follows. Regarding the mixture of dentified intermediates, such as Example 5 of 1,3,5,7-Ci (3 / 4-bromophenyl) adamantane and 1,3 / 4-bis [lf, 3f, 5, and (3π / 4 ''-bromophenyl) adamantyl] benzene, shake the reaction mixture (0.5-1 ml) with approximately 4% HC1 (several ml). The organic layer was shaken with water. A sample of the organic layer (20 µl) was taken and acetonitrile (1 ml) was added. A mixture of the final products is shown in Example 5 of 1,3,5,7-[[Small- (phenylethynyl) phenyl] adamantane and 1,3 / 4-bis {Γ, 3 *, 5 ' -Refer to [3 " / 4 ''-(phenylethynyl) phenyl] adamantyl}. A mixture of benzene, mixed with chloroform (5 ml) and 3-5% ... HC1 (5 ml) reaction mixture (0.5 G) and shake it. Wash with water at -50- 200408662 (44). A sample of the organic layer (100 μl) was added to tetrahydroanil (0.9 mL). Gel Permeation Chromatography (GPC): GPC analysis system uses Water 717 plus Autosampler, Waters in-line degasser, Waters 515 HPLC ^, Waters 410 differential refractometer (RI detector) and two columns. Water PI liquid chromatography system composed of HP PI gel 5μ MIXED D was completed. The analysis conditions are: mobile phase tetrahydrofuran (THF) column flow (ml / min) 1.0 column temperature (° c) 40.0 detection of refractive index, polarity negative analysis running time 25 minutes injection volume (microliter) 50 sample (10 mg ) Prepared by adding tetrahydrofuran (1 ml). Mass Spectroscopy (MS): This analysis was performed on a Finnigan / MAT TSQ7000 three-stage quadrupole mass spectrometer system with an atmospheric pressure ionization (API) interface unit using a Hewlett-Packard series 1050 HPLC system as the analytical inlet. Mass ion current and variable single-wavelength UV data can be obtained for time-bit intensity chromatography. Chromatography was performed on a Phenomenex Luna 5 micron phenylhexyl column (250 x 4.6 mm). Samples are automatically injected with 10 or 20 microliters of concentrated solution in tetrahydrofuran and without tetrahydrofuran. The mobile phase flowing through the column was 1.0 microliters / minute acetonitrile / water, initially 70/30 for 5 minutes, and then planned to 100% acetonitrile in 15 minutes and maintained until 100 minutes (longer than the column completely Elution material is actually required). The atmospheric pressure chemical ionization (APCI) mass spectrum was recorded alternately in positive and negative modes. APCI corona discharge is 5 microamperes, right • 51 · 200408662

(45) 正電離子化約5千伏及對負電離子化約4千伏。加熱毛細管 線保持在200°C下蒸發器室在400°C下。在四極質量分析後 在檢測系統上設定在15千伏變頻倍增電極與1500伏電子 倍增電壓。質量光譜通常在0.5秒/掃描,對正電離子化約 m/z 150至2000 a.m.u.而對負電離子化模式約m/z 125至2000 a.m.u. 0 差示掃描卡計(DSC):使用TA儀器2920差示掃描卡計連 同控制器與相關軟體進行DSC測量。具有溫度為250°C至 725°C (惰性氣壓:50毫升/分鐘氮氣)之標準DSC單位用以分 析。液態氮用作冷卻氣體源。小量樣品(10- 12毫克)小心地 秤入Auto DSC鋁樣品盤(零件#990999-901),使用精確度為土 0.0001克合勺Mettler Toledo分析平衡器。樣品用事先在中心 穿孔容許氣體排出的蓋子覆蓋盤而包.封。樣品在氮氣下在 速率為100°C /分鐘下自(TC加熱至450°C (循環1),然後在速 率為10CTC /分鐘下冷卻至0°C。第二循環直接在速率為100 °C /分鐘下自0°C運行至450°C (重複循環1)。自第一循環決 定交聯溫度。 FTIR分析:以傳輸模式使用Nicolet Magna 550 FTIR光譜計 獲得FTIR光譜。在未塗佈基材上取得基材背景光譜。使用 基材作為背景取得薄膜光譜。然後,分析薄膜之尖峰位置 與強度改變。 介電常數:介電常數係藉塗佈鋁膜在f·曲層上,然後在 1 MHz下實施電容-電壓測定並基於層厚計算k值而決定。 玻璃韓化溫度(Tg):薄膜的玻璃轉化溫度係藉測定薄膜 200408662(45) Positive ionization is about 5 kV and negative ionization is about 4 kV. The heated capillary wire was kept at 200 ° C and the evaporator chamber was at 400 ° C. After the quadrupole mass analysis, a 15 kV variable frequency multiplication electrode and a 1500 volt electron multiplication voltage were set on the detection system. Mass spectrum is usually 0.5 sec / scan, about m / z 150 to 2000 amu for positive charge ionization and about m / z 125 to 2000 amu for negative charge ionization mode 0 Differential Scanning Card Meter (DSC): using TA instrument 2920 The differential scanning card meter, together with the controller and related software, performs DSC measurements. Standard DSC units with a temperature of 250 ° C to 725 ° C (inert gas pressure: 50 ml / min nitrogen) are used for analysis. Liquid nitrogen is used as a cooling gas source. A small amount of sample (10-12 mg) was carefully weighed into an Auto DSC aluminum sample pan (part # 990999-901) and an analytical balancer with an accuracy of 0.0001 g of spoon and a Mettler Toledo was used. The sample was sealed by covering the tray with a lid that was previously perforated in the center to allow gas to escape. The sample was heated from (TC to 450 ° C (cycle 1) at a rate of 100 ° C / min under nitrogen and then cooled to 0 ° C at a rate of 10CTC / min. The second cycle was directly at a rate of 100 ° C Run from 0 ° C to 450 ° C per minute (repeat cycle 1). Cross-linking temperature is determined from the first cycle. FTIR analysis: FTIR spectra were obtained in transfer mode using a Nicolet Magna 550 FTIR spectrometer. On uncoated substrates The background spectrum of the substrate is obtained on the substrate. The thin film spectrum is obtained using the substrate as the background. Then, the peak position and intensity change of the thin film are analyzed. Dielectric constant: The dielectric constant is obtained by coating an aluminum film on the f · curved layer, and then at 1 Capacitance-voltage measurement is performed at MHz and is determined by calculating the k value based on the layer thickness. Glass Koreanization Temperature (Tg): The glass transition temperature of the film is determined by measuring the film 200408662

(46) 應力作為溫度函數而決定。薄膜應力測定係在KLA 3220 Flexus上進行。在薄膜測定前,未塗佈晶圓在500°C下退火 60分鐘以防任何由於晶圓本身應力鬆弛的誤差。然後,用 欲試驗的材料沉積晶圓並透過所有需要加工步驟加工。然 後,晶圓放入應力儀内,其測定晶圓弓作為溫度函數。儀 器計算應力對溫度曲線圖,但其限制條件為晶圓厚度與薄 膜厚度為已知。其結果以曲線圖形式顯示。為了決定丁g 值,繪出水平切線(0在應力對溫度曲線塗上的斜面值)。 Tg值在曲線圖與水平切線交叉之處。 須知若在第一溫度循環或後續循環後才決定丁g時,使用 最高溫度,因為測量過程本身會影響Tg。 等溫重量分析HTGA)失重率:全部失重率係在TA儀器 2950熱重量分析器連同TA儀器熱分析控制器與相關款體 上測量。使用Piatinel熱電偶與標準爐,具有溫度範圍為25 °C至1000°C及加熱速率為o.rc至100°C /分鐘。小量樣品(7 至12毫克)秤重在TGA平衡器上(分解度:0.1 ? g;精確度:= 至± 0.1 %)並在鉬盤上加熱。樣品在氮氣下用清除速率為 100毫升/分鐘(60毫升/分鐘對爐而40毫升/分鐘對平衡器) 下加熱。樣品在20°C氮氣下平衡20分鐘,然後溫度在速率 為10°C /分鐘下升至200°C並保持在200°C歷10分鐘。然後溫 度在速率為10°C /分鐘下升至425°C並保持在425°C歷4小 時。計算在425°C下4小時期間的失重率。 收縮率:薄膜收縮率係在過程前後測定膜厚而決定。收 _縮率以最初膜厚%表示。若膜厚減少時,收縮率為正數。 〇3- 200408662(46) Stress is determined as a function of temperature. Film stress measurements were performed on a KLA 3220 Flexus. Before the thin film measurement, the uncoated wafer is annealed at 500 ° C for 60 minutes to prevent any errors due to the stress relaxation of the wafer itself. The wafer is then deposited with the material to be tested and processed through all required processing steps. The wafer is then placed in a stress meter, which measures the bow of the wafer as a function of temperature. The instrument calculates the stress vs. temperature curve, but the limitation is that the wafer thickness and film thickness are known. The results are displayed in the form of a graph. In order to determine the value of g, a horizontal tangent line is drawn (the slope of 0 on the stress versus temperature curve). The Tg value is where the graph crosses the horizontal tangent. It should be noted that if Ding g is determined after the first temperature cycle or subsequent cycles, the highest temperature is used because the measurement process itself will affect Tg. Isothermal Gravimetric Analysis (HTGA) Weight Loss Rate: The total weight loss rate is measured on the TA Instrument 2950 Thermogravimetric Analyzer together with the TA Instrument Thermal Analysis Controller and related models. Uses a Piatinel thermocouple and a standard furnace with a temperature range of 25 ° C to 1000 ° C and a heating rate of o.rc to 100 ° C / min. Small samples (7 to 12 mg) are weighed on a TGA balancer (resolution: 0.1? G; accuracy: = to ± 0.1%) and heated on a molybdenum pan. The sample was heated under nitrogen at a purge rate of 100 ml / min (60 ml / min on the furnace and 40 ml / min on the balancer). The sample was equilibrated under nitrogen at 20 ° C for 20 minutes, then the temperature was raised to 200 ° C at a rate of 10 ° C / minute and held at 200 ° C for 10 minutes. The temperature was then raised to 425 ° C at a rate of 10 ° C / min and held at 425 ° C for 4 hours. Calculate the weight loss rate during 4 hours at 425 ° C. Shrinkage: Film shrinkage is determined by measuring the film thickness before and after the process. The shrinkage ratio is expressed in% of the initial film thickness. When the film thickness is reduced, the shrinkage is positive. 〇3- 200408662

(47) 實際厚度測定係使用】.八.^^〇〇11&1111^-88光譜橢圓計視需要 進行。使用Cauchy模型以計算最適值供Psi與Delta(橢圓計 法的細節揭示於例如”光譜橢圓計法與反射測定法”, H.G.Thompkins and William A.McGahan, John Wiley and Sons, Inc., 1999)。(47) The actual thickness measurement system is used. 八. ^^ 〇〇11 & 1111 ^ -88Spectral ellipsometry is performed as needed. The Cauchy model was used to calculate optimal values for Psi and Delta (details of the ellipsometry method are disclosed in, for example, "Spectral Ellipsometer Method and Reflectometry", H.G. Thompkins and William A. McGahan, John Wiley and Sons, Inc., 1999).

析射指數:析射指數測定與厚度測定一起使用J.A. Woollam Μ-88光譜橢圓計進行。使用Cauchy模型以計算最適 值供Psi與Delta。除非另予指明,折射指數在波長為633毫 微米下紀錄(橢圓計法的細節揭示於例如”光譜橢圓計法 與反射測定法 ’’,H.G.Thompkins and William A.McGahan,John Wiley and Sons, Inc·,1999) 0Emissivity index: The measurement of the emissivity index was performed together with the thickness measurement using a J.A. Woollam M-88 spectroscopic ellipsometer. Cauchy models were used to calculate the optimal values for Psi and Delta. Unless otherwise specified, the refractive index is recorded at a wavelength of 633 nm (details of the ellipsometry are disclosed in, for example, "Spectral Ellipsometer and Reflectometry", HGThompkins and William A. McGahan, John Wiley and Sons, Inc ·, 1999) 0

模數與硬度:使用裝有儀器的壓痕試驗測定模數與硬 度。使用 MTS Nanoindenter XP(MTS Systems Corp·,Oak Ridge, TN)進行此項測定。明確而言,使用連續剛度測定法,其 可具有模數與硬度的精確又持續的測定而非自卸貨曲線 不同值的測定。用具有標稱模數為72+-3.5Gpa的熔矽校準 系統。熔矽的模數獲自500至1000毫微米壓痕深度間的平 均值。關於薄膜,模數與硬度值獲自模數對深度曲線的最 小值,其通常為膜厚的5至15%之間。 膠帶試驗:根據ASTM D3359-95提供的指導手冊進行膠 帶試驗。根據以下將柵格刻入介電層内。以下面方式對柵 格標記進行膠帶試驗:(1)一條膠帶,較佳為Scotch牌#3m 600- 1/2x1296,放在此層上,用力向下壓以作成良好接觸; 及(2)然後迅速拉開膠帶,即使對層表面在角度為180°下 -54- 200408662Modulus and hardness: Determine the modulus and hardness using an instrumented indentation test. This measurement was performed using MTS Nanoindenter XP (MTS Systems Corp., Oak Ridge, TN). Specifically, continuous stiffness measurement can be used to have accurate and continuous measurements of modulus and hardness rather than different values of the self-unloading curve. The system was calibrated with fused silicon with a nominal modulus of 72 + -3.5Gpa. The modulus of the fused silicon is obtained from the average value between 500 and 1000 nanometers of indentation depth. For thin films, the modulus and hardness values are obtained from the minimum value of the modulus versus depth curve, which is usually between 5 and 15% of the film thickness. Tape test: The tape test was performed according to the instruction manual provided by ASTM D3359-95. The grid is engraved into the dielectric layer according to the following. Perform tape test on the grid mark in the following ways: (1) a tape, preferably Scotch brand # 3m 600- 1 / 2x1296, placed on this layer and pressed down firmly to make a good contact; and (2) then Quickly pull off the tape, even if the surface of the layer is at an angle of 180 ° -54- 200408662

(48) 亦然。若層在晶圓上仍原封不動時,樣品被視為通過,或 若部分或全部薄膜越過膠帶則視為不通過。 柱螺拉力試驗:塗有環氧樹脂的柱螺接附至含有本發明 層之晶圓表面。陶瓷底板施加至晶圓的後側以防基材彎曲 以及不當應力集中在柱螺邊緣。然後,藉試驗裝置使用標 準拉力規定步驟以垂直於晶圓表面的方向拉住柱螺。然後 紀錄施加在失敗點的應力與介面位置。 與溶劑的相容性:與溶劑的相容性係在溶劑處理前後藉 測定膜厚、折射指數、FTIR光譜及介電常數而測定。關於 可相容性溶劑,未曾觀察到明顯改變。 實例1 4,6-雙(金剛烷基)間苯二酚的合成 間苯二酚(11.00克,100.0毫莫耳)、溴金岡U烷(44.02克,205.1 毫莫耳)及甲苯(150毫升)加入設有氮氣入口、熱電偶及冷 凝器之250毫升3頸式燒瓶中。混合物加熱至110°C並變成清 澄溶液。使反應持續48小時,此時TLC顯示所有間苯二酚 皆消失。除去溶劑,固體自己烷(150毫升)結晶。可得66.8% 產率(25.26克)白色固體的雙取代產物。另外5.10克產物係 在第一次收成後介濃縮母液之矽膠柱式層析術獲得。產物 之全部產率為80.3%。產物係藉質子NMR,HPLC,FTIR及 MS特性化。(48) The same is true. The sample is considered to pass if the layer remains intact on the wafer, or it is considered to fail if some or all of the film passes over the tape. Stud tensile test: Epoxy-coated studs are attached to the surface of a wafer containing the layer of the invention. A ceramic backplane is applied to the back of the wafer to prevent substrate bending and improper stress concentration on the stud edges. Then, the stud was pulled by the test device using a standard pulling force prescribed procedure in a direction perpendicular to the wafer surface. Then record the stress and interface position applied at the point of failure. Compatibility with solvents: Compatibility with solvents is determined by measuring film thickness, refractive index, FTIR spectrum and dielectric constant before and after solvent treatment. Regarding the compatible solvents, no significant change was observed. Example 1 Synthesis of 4,6-bis (adamantyl) resorcinolResorcinol (11.00 g, 100.0 mmol), bromogumurane (44.02 g, 205.1 mmol) and toluene (150 ml ) Add to a 250 ml 3-necked flask equipped with a nitrogen inlet, thermocouple and condenser. The mixture was heated to 110 ° C and became a clear solution. The reaction was allowed to continue for 48 hours, at which time TLC showed that all resorcinol had disappeared. The solvent was removed and the solid crystallized from hexane (150 ml). The disubstituted product was obtained in a white solid as a 66.8% yield (25.26 g). Another 5.10 g of product was obtained after silica gel column chromatography of concentrated mother liquor after the first harvest. The overall yield of the product was 80.3%. The product was characterized by proton NMR, HPLC, FTIR and MS.

-55- 200408662 (49) 4.6-譬(金剛烷基)間笨二酚聚合成聚(伸芳鲢)主鏈 雙(金剛烷基)間苯二酚(7.024克,18.57毫莫耳)、FBZT (5.907克,18.57毫莫耳)、碳酸鉀(5.203克,36.89毫莫耳)、 DM AC( 50毫升)及甲苯(25毫升)加入設有氮氣入口、熱電偶 及狄恩-斯塔克(Dean-Stark)收集器之250毫升3頸式燒瓶 中。反應在此溫度下持續1小時而溫度藉除去一些曱苯上 升至165°C。聚合過程係藉GPC監視。在Mw=22,000時,停止 反應。另外50毫升部分DMAC加入反應燒瓶中。固體在室 溫下過濾,並用熱二氯甲烷(2x150毫升)萃取。甲醇(150毫 升)加入溶液中以沉澱白色固體,其係藉過濾單離。產率 為65·8%( 8.511克)。固體溶解於四氫呋喃(150毫升)内而曱 醇(3 0 0毫升)緩慢加入溶液中。沉殿的白色固體藉由過;慮 單離並在90°C下於真空中乾燥。-55- 200408662 (49) 4.6- For example, (adamantyl) resorcinol is polymerized into poly (extruded arsine) main chain bis (adamantyl) resorcinol (7.024 g, 18.57 mmol), FBZT (5.907 g, 18.57 mmol), potassium carbonate (5.203 g, 36.89 mmol), DM AC (50 ml) and toluene (25 ml) were added with a nitrogen inlet, a thermocouple, and Dean Stark ( Dean-Stark) collector in a 250 ml 3-necked flask. The reaction continued at this temperature for 1 hour and the temperature was raised to 165 ° C by removing some toluene. The aggregation process is monitored by GPC. When Mw = 22,000, the reaction was stopped. An additional 50 ml portion of DMAC was added to the reaction flask. The solid was filtered at room temperature and extracted with hot dichloromethane (2 x 150 mL). Methanol (150 mL) was added to the solution to precipitate a white solid, which was isolated by filtration. The yield was 65.8% (8.511 g). The solid was dissolved in tetrahydrofuran (150 ml) and methanol (300 ml) was slowly added to the solution. Shen Dian's white solid was passed; isolated and dried under vacuum at 90 ° C.

-56- 200408662 (50) 實例ΙΑ : 組合物係自實例1的產物、矽烷黏著促進劑及溶劑形 成,然後旋壓在基材上。 實例2 -替代聚合物的合成-56- 200408662 (50) Example IA: The composition was formed from the product of Example 1, a silane adhesion promoter, and a solvent, and was then spun on the substrate. Example 2-Synthesis of Alternative Polymers

除了 4,4’-二氟二苯乙炔用作二氟化合物以外,使用如實 例1所述的合成程序。The synthetic procedure described in Example 1 was used except that 4,4'-difluorodiphenylacetylene was used as the difluoro compound.

實例2 A •57- 200408662Example 2 A57-200408662

除了 3,4-二氟四苯基環二烯酮用作二氟化合物以外,根 據實例1所述的合成程序。 實例2B : 组合物係自實例2的產物、苯酚-甲醛樹脂黏著促進劑及 溶劑形成,然後旋歷:在基材上。 實例2C : 組合物係自實例2A的產物、縮水甘油醚黏著促進劑及溶 劑形成,然後旋壓:在基材上。 實例3 預期替代性主鏈 以下結構物為預期典型主鏈,其可根據實例1與2的一般 合成程序製造。 •58· 200408662 (52)The synthetic procedure described in Example 1 was followed except that 3,4-difluorotetraphenylcyclodienone was used as the difluoro compound. Example 2B: The composition is formed from the product of Example 2, a phenol-formaldehyde resin adhesion promoter, and a solvent, and then rotated on the substrate. Example 2C: The composition was formed from the product of Example 2A, a glycidyl ether adhesion promoter, and a solvent, and then was spun: on a substrate. Example 3 Anticipated Alternative Main Chain The following structures are expected typical main chains, which can be manufactured according to the general synthetic procedures of Examples 1 and 2. • 58 · 200408662 (52)

實例3A : 組合物係自實例3的第一聚合物、不鉋和羧酸酯黏著促 進劑及溶劑形成,然後旋壓在基材上。 實例3B : 組合物係自實例3的第二聚合物、乙婦吡啶低聚物或聚 -59- 200408662 (53) 合物黏著促進劑及溶劑形成,然後旋壓在基材上。 —— p且合物係自實例3的第三聚合物、乙缔芳烴低聚物或聚 合物黏著促進劑及溶劑形成,然後旋壓在基材上。 實例 組合物係自實例3的第四聚合物、乙缔雜芳烴低聚物或 水合物點著促進劑及溶劑形成,然後旋壓在基材上。 實例4 :, ^ Α料9Β所示的金剛完封端單體如c.M.Lewis,L.J.Example 3A: The composition was formed from the first polymer of Example 3, a non-planar, and a carboxylate adhesion promoter and a solvent, and was then spun on a substrate. Example 3B: The composition was formed from the second polymer, acetopyridine oligomer, or poly-59-200408662 (53) compound adhesion promoter and solvent of Example 3, and then was spun on the substrate. ——P and the compound is formed from the third polymer, ethylenene oligomer or polymer adhesion promoter and solvent of Example 3, and is then spun on the substrate. Example The composition was formed from the fourth polymer, ethylene heteroaromatic oligomer, or hydrate of Example 3 with a promoter and a solvent formed, and was then spun on a substrate. Example 4: The diamond-end-capped monomer shown in ^ Α 料 9B such as c.M.Lewis, L.J.

Mathias,N.Wiegai,ACS Polymer Preprints, 36(2),140( 1995)所述 名又合成。 實例4A : 一—. ’且σ物係自實例4的產物、乙烯矽烷黏著促進劑及溶劑 形成’然後旋壓在基材上。 實例5— 此貫例例示熱固性組份(a)的製備。 四溴金剛烷fTBAl之合成Mathias, N. Wiegai, ACS Polymer Preprints, 36 (2), 140 (1995) have been synthesized. Example 4A: I—. And σ is formed from the product of Example 4, an ethylene silane adhesion promoter, and a solvent are formed, and then is spun on the substrate. Example 5—This example illustrates the preparation of a thermosetting component (a). Synthesis of Tetrabromoadamantane fTBAl

1,3,5,7-四溴金剛烷合成自市面上可得金剛烷開始並根 據如 G.P. Sollott and E.E· Gilbert, j.〇rg· Chem·,45,5405-5408 (1980),B.Schartel,V. Stumpflin, J. Wendling, J.H. Wendorff, W. -60- 200408662The synthesis of 1,3,5,7-tetrabromoadamantane starts from commercially available adamantane and is based on e.g. GP Sollott and EE · Gilbert, j. Org · Chem ·, 45, 5405-5408 (1980), B. Schartel, V. Stumpflin, J. Wendling, JH Wendorff, W. -60- 200408662

(54)(54)

Heitz,及 R. Neuhaus,Colloid Polym.Sci·,274,911-919(1996), 或 A.P. Khardin,Ι·Α· Novakov,及 S.S. Radchenko,Zh. Org. Chem·, 9,435( 1972)所述的合成程序。例行合成每批最多150克之 量 。 步驟2 : 1,3·5·7-肆(3/4-溴笨基)金剛烷(TBPA)輿1,3/4-雙 「I η”/4" -溴笨基)金剛烷基1笨ίΒΤΒΡΑΒ)之混合物 的合成Heitz, and R. Neuhaus, Colloid Polym. Sci., 274, 911-919 (1996), or AP Khardin, IA Novakov, and SS Radchenko, Zhi. Org. Chem., 9, 435 (1972) The synthesis procedure described above. Routine synthesis of up to 150 grams per batch. Step 2: 1,3 · 5 · 7-Di (3 / 4-bromobenzyl) adamantane (TBPA) and 1,3 / 4-bis "I η" / 4 " -Bromobenzyl) adamantyl 1 Synthesis of a mixture of stupid ΒΤΒΡΑΒ)

在第一步騾中,ΤΒΑ與溴苯反應以假設可得1,3,5,7-肆 (3/4-溴苯基)金剛烷(ΤΒΡΑ),如 Macromolecules,27, 7015-7023 ( 1994)(如上)所述。HPLC-MS分析顯示全部反應產物所欲 TBPA存在的%約為50%,伴隨40%三溴化四苯基金岡虎及約 1 〇%二溴化四苯基金剛烷。In the first step, TBA is reacted with bromobenzene to assume that 1,3,5,7-methyl (3 / 4-bromophenyl) adamantane (TBPA) can be obtained, such as Macromolecules, 27, 7015-7023 (1994 ) (Above). HPLC-MS analysis showed that the desired TBPA in all reaction products was present at about 50%, with 40% tetraphenyl apatine tiger bromide and about 10% tetraphenyl adamantane dibromide.

-40% 一 0% 明確言之,以上步騾2的實驗程序如下:-40% to 0% To be clear, the experimental procedure of step 2 above is as follows:

組合乾燥5升3頸式圓底燒瓶、凝水器、磁性攪拌桿、加 熱套筒、熱電偶、熱控制器單元及對30%KOH溶液N2入口-出口。用N2清除燒瓶10分鐘。2升(自全部體積62% v/v)漠 笨澆入燒瓶内並作動攪拌桿。加入丁8八(160.00±0.30克)而 漏斗用1升(自全部體積31% v/v)溴苯清洗。取出原料HPLC • 61 - 200408662Combined dry 5 liter 3-necked round bottom flask, condenser, magnetic stirrer, heating sleeve, thermocouple, thermal controller unit and N2 inlet-outlet for 30% KOH solution. The flask was purged with N2 for 10 minutes. 2 liters (62% v / v of total volume) was poured into the flask and the stirring rod was activated. Add D88 (160.00 ± 0.30 g) and the funnel is cleaned with 1 liter (31% v / v of total volume) bromobenzene. Remove the raw material HPLC • 61-200408662

樣品並與標準HPLC層析譜比較。溴化鋁(32.25 ± 0.30克)加 入溶液而漏斗用220毫升(自全部體積7% v/v)溴苯清洗。此 時的溶液為深紫色而無沉澱可見。反應混合物在室溫下攪 拌1小時。在1小時後,反應混合物溫度上升至40°C。在溫 度到達40°C後,將反應混合物攪拌3小時。分別在時間1 + 3.0 在40°C下取出HPLC樣品。當在HPLC層析譜上未看到痕量 TBA時,反應完成。當反應完成時,深色反應混合物澆入 20升反應器内,其含有7升(相對於全部溴苯體積217% v/v) 去離子水、2升(相對於全部溴苯體積62% v/v)冰及300毫升 (3 7%) HC1(相對於全部溴苯體積9% v/v)。使用架空攪掉器 強力擾拌反應混谷物1小時土 10分鐘β 有機層轉移至分離室並用700毫升(相對於全部溴苯體 積22% v/v)去離子水部分洗滌二次。洗滌過有機層放入4升 分離式漏斗内並作為緩慢流加入16升(對全部溴苯體積5x 倍)甲醇放在高價攪拌器下方的30升反應器内以在25分鐘 土 5分鐘期間沉澱固體。在加成完成後,強力攪拌甲醇懸 浮液歷1小時± 10分鐘。甲醇懸浮液透過Buchner漏斗(1 85 毫升)藉吸力過濾。固體在濾餅上用三個部分600毫升(相 對於全部溴苯體積19% v/v)甲醇洗滌。將固體乾吸30分鐘。 所得淡紅色粉使用括刀騰空入晶化器盤中並放入真空 爐内以乾燥隔夜,然後在乾燥後秤重。粉末在真空爐内再 乾燥另外2小時,直到重量改變為< 1 %為止,然後再秤重。 在乾燥固體後,紀錄最後的重量併計算產率。產物如上述 為約50%ΤΒΡΑ、40%三溴化四苯基金岡1J烷及10%二溴化四苯 200408662 (56) 1^^^ 基金剛烷。產率為176.75克。形成3〇重量%8丁8?八8。 步驟3 : TBPA輿BTBPAB的合成The samples were compared with a standard HPLC chromatogram. Aluminum bromide (32.25 ± 0.30 g) was added to the solution and the funnel was washed with 220 ml (7% v / v of total volume) bromobenzene. The solution at this time was dark purple without visible precipitation. The reaction mixture was stirred at room temperature for 1 hour. After 1 hour, the temperature of the reaction mixture rose to 40 ° C. After the temperature reached 40 ° C, the reaction mixture was stirred for 3 hours. HPLC samples were taken at time 1 + 3.0 at 40 ° C. When no trace TBA was seen on the HPLC chromatogram, the reaction was complete. When the reaction is complete, the dark reaction mixture is poured into a 20-liter reactor containing 7 liters (217% v / v relative to the total bromobenzene volume), 2 liters (62% v relative to the total bromobenzene volume v) / v) ice and 300 ml (3 7%) HC1 (9% v / v relative to total bromobenzene volume). Use an overhead stirrer to vigorously stir the reaction mixture for 1 hour and 10 minutes. The β organic layer was transferred to the separation chamber and washed twice with 700 ml (22% v / v relative to the total bromobenzene volume) of deionized water. The washed organic layer was placed in a 4 liter separation funnel and 16 liters (5x times the volume of total bromobenzene) of methanol was added as a slow stream. The methanol was placed in a 30 liter reactor under a high-priced stirrer to settle within 25 minutes and 5 minutes solid. After the addition is complete, vigorously stir the methanol suspension for 1 hour ± 10 minutes. The methanol suspension was filtered by suction through a Buchner funnel (1 85 ml). The solid was washed on the filter cake with three 600 ml portions (19% v / v relative to the total bromobenzene volume) of methanol. The solid was sucked dry for 30 minutes. The resulting light red powder was emptied into a crystallizer tray using a trowel and placed in a vacuum oven to dry overnight, and then weighed after drying. The powder was dried for another 2 hours in a vacuum oven until the weight changed to < 1%, and then weighed again. After drying the solid, record the final weight and calculate the yield. The products are about 50% TAPA, 40% tetraphenyljinbo 1Jane tribromide and 10% tetraphenyl dibromide 200408662 (56) 1 ^^^ as mentioned above. The yield was 176.75 g. 30% by weight of 8 to 8 to 8 was formed. Step 3: Synthesis of TBPA and BTBPAB

四、三及二溴衍生物之對位、間位異構體之混合物Mixture of para, meta isomers of tetra, tri and dibromo derivatives

{rsvrnlrI ΒΓ US I 一{rsvrnlrI ΒΓ US I a

1,3,5,7-肆(3’/4、溴苯基)金剛烷 (對位與間位異構體的混合物) 然而,意外的,是,當先前產物混合物受到新鮮試劑與觸 媒(溴苯與A1C13,在20°C下1分鐘)時,四溴化、三溴化及二 溴化單體混合物的TBPA比例自約50%增至約90-95%。3-5 重量%BTBPAB仍然存在。此結果意外的是申請人等重複多 -63 - 2004086621,3,5,7-Di (3 '/ 4, bromophenyl) adamantane (mixture of para and meta isomers) However, unexpectedly, when the previous product mixture was subjected to fresh reagents and catalysts (Bromobenzene and A1C13, 1 minute at 20 ° C), the TBPA ratio of the tetrabromide, tribromide and dibromide monomer mixture increased from about 50% to about 90-95%. 3-5 wt% BTBPAB is still present. This result was unexpectedly repeated by applicants -63-200408662

(57) 次證實而此導致轉化先前混合物城熱固性組份(a)的新穎 方法,如以下以及圖11所述。 明確而言,以上步驟3的實驗程序如下。所用的設備與 以上步騾2者相同。 根據上述/傳統合成法所合成的TBPA的產率計算所需溴 苯與溴化鋁的對應量。適量(自全部體積80% Wv)溴苯澆入 燒瓶内並作動攪拌桿。加入自以上步驟2合成的充足量 TBA而漏斗用適量(自全部體積10%v/v)溴苯清洗。取出原 料HPLC樣品並與標準HPLC層析譜比較。充足量溴化鋁加 入溶液而漏斗用剩餘(自全部體積10%)溴苯清洗。此時的 溶液為深紫色而無沉澱可見。反應混合物在室溫下攪* 17 分鐘。在5分鐘與17分鐘後,取出HPLC樣品。當對應於TBPA 的尖峰群在HPLC層析譜中佔優勢時,反應完成。當反應 完成時,深色反應混合物澆入20升反應器内,其含有7升 (相對於全部溴笨體積217% v/v)去離子水、2升(相對於全 部溴笨體積62% v/v)冰及300毫升(37%)HC1(相對於全部溴 苯體積9% v/v),並使用架空攪拌器強力攪拌歷1小時± 10 分鐘。 有機層轉移至分離式漏斗並用700毫升(相對於全部溴 苯體積22% v/v)去離子水部分洗滌二次並用700毫升(相對 於全部溴苯體積22% v/v)飽和NaCl溶液部分洗滌三次。洗 條過有機層放入4升分離式漏斗内並作為緩慢流加入適量 (對全部溴苯體積5x倍)甲醇放在高價攪拌器下方的30升反 應器内以沉澱固體歷25分鐘± 5分鐘。在加成完成後,強 200408662(57) confirmations and this resulted in a novel method of converting the previous mixture of thermosetting component (a), as described below and in Figure 11. Specifically, the experimental procedure of step 3 above is as follows. The equipment used is the same as in step 2 above. The corresponding amount of bromobenzene and aluminum bromide required was calculated based on the yield of TBPA synthesized by the above / traditional synthesis method. An appropriate amount (from 80% Wv by volume) of bromobenzene was poured into the flask and the stirring rod was activated. A sufficient amount of TBA synthesized from step 2 above was added and the funnel was washed with an appropriate amount (from the entire volume of 10% v / v) bromobenzene. A raw HPLC sample was taken and compared to a standard HPLC chromatogram. A sufficient amount of aluminum bromide was added to the solution and the funnel was washed with the remaining (10% of the total volume) bromobenzene. The solution at this time was dark purple without visible precipitation. The reaction mixture was stirred at room temperature * 17 minutes. After 5 minutes and 17 minutes, HPLC samples were taken. The reaction was complete when the spike group corresponding to TBPA was dominant in the HPLC chromatogram. When the reaction is complete, the dark reaction mixture is poured into a 20 liter reactor, which contains 7 liters (217% v / v relative to the total bromine volume) deionized water, 2 liters (62% v relative to the total bromine volume v / v) Ice and 300 ml (37%) HC1 (9% v / v relative to the total volume of bromobenzene), and stir vigorously with an overhead stirrer for 1 hour ± 10 minutes. The organic layer was transferred to a separation funnel and partially washed twice with 700 ml (22% v / v of total bromobenzene volume) deionized water and partially saturated with 700 ml (700% (22% v / v of bromobenzene volume) of saturated NaCl solution. Wash three times. After washing the organic layer, put it in a 4 liter separation funnel and add an appropriate amount (5x times the volume of total bromobenzene) of methanol as a slow flow. Place the 30 liter reactor under the high-priced stirrer to precipitate solids for 25 minutes ± 5 minutes . After the bonus is completed, strong 200408662

(58) 力攪拌曱醇懸浮液歷1小時± 10分鐘。曱醇懸浮液透過 Buchner漏斗(185毫升)藉吸力過濾。固體在濾餅上用三個部 分600毫升(相對於全部溴苯體積19% v/v)甲醇洗滌。將固 體乾吸30分鐘。 所得淡紅色粉使用括刀騰空入晶化器盤中並放入真空 爐内以乾燥隔夜,然後在乾燥後秤重。粉末在真空爐内再 乾燥另外2小時,直到重量改變為< 1 %為止,然後再秤重。 在乾燥固體後,紀錄最後的重量並計算產率。產率為8 5 %。 步驟4 : 1,3,5,7-肆「374·-(笨基乙炔基)茉基1金剛烷(TPEPA) 與U3/4-雙丨Γ,3’,5、參笨基乙炔基)笨基1金岡彳烷}笨 (ΒΤΡΕΡΑΒ)之混合物的合成 200408662 (59)(58) Stir the ethanol suspension for 1 hour ± 10 minutes. The methanolic suspension was filtered by suction through a Buchner funnel (185 ml). The solid was washed with three portions of 600 ml (19% v / v relative to the total bromobenzene volume) methanol on the filter cake. Dry the solid for 30 minutes. The resulting light red powder was emptied into a crystallizer tray using a trowel and placed in a vacuum oven to dry overnight, and then weighed after drying. The powder was dried for another 2 hours in a vacuum oven until the weight changed to < 1%, and then weighed again. After drying the solid, record the final weight and calculate the yield. The yield was 85.5%. Step 4: 1,3,5,7-, "374 ·-(benzylethynyl) mosyl-1adamantane (TPEPA) and U3 / 4-bis, Γ, 3 ', 5, parabenzyl ethynyl) Synthesis of Benzoyl 1-Ganggang Pinane} Blend (BTPPEPAB) 200408662 (59)

TBPA與ΒΊΓΒΡΑΒ的混合物係與笨基乙炔反應以得最後產 物,具有95-97重量%1,3,5,7-肆[374*-(苯基乙炔基)苯基]金 剛烷(ΤΡΕΡΑ)-作為異構體的混合物-根據鈀-催化Heck乙炔 化的一般反應規定與3-5重量%1,3/心雙{1·,3·,5·-參[3”/4” -66- 200408662The mixture of TBPA and ΒΓΓΒΡΑΒ is reacted with phenylacetylene to obtain the final product, which has 95-97% by weight of 1,3,5,7-^ [374 *-(phenylethynyl) phenyl] adamantane (TPEPA)- As a mixture of isomers-according to the general reaction of palladium-catalyzed Heck acetylation stipulated with 3-5% by weight 200408662

(60) -(苯基乙炔基)苯基]金剛烷基}苯(BTPEPAB)作為間位與對 位異構體的混合物,由GPC,NMR及HPLC所證實。由包括 ΤΒΡΑ的反應製成的ΤΒΡΑ與ΒΤΒΕΡΑΒ的混合物可溶解於環 己嗣内。 明確而言,此步驟5合成法的實驗程序如下。組合以下 設備:乾燥2升3頸式圓底燒瓶、凝水器、架空攪拌器、加 熱套筒、熱電偶、熱控制器單元、滴液漏斗、2頸式接合 器及對30%Κ〇Η溶液Ν2入口 -出口。用乂清除燒瓶10分鐘。 秤重自以上步騾3合成程序之ΤΒΡΑ與ΒΤΒΡΑΒ的混合 物。三乙胺(TEA)(全部計算的TEA體積減300毫升)加入反 應燒瓶内,作動架空攪摔器,接著加入以下面按序列示的 化合物:二氯雙(三苯膦)鈀[II]觸媒,用50毫升(全部體積 之4%)TEA清洗漏斗並攪捽5分鐘;三苯膦,用50毫升(全部 體積之4%)TEA清洗漏斗並攪拌5分鐘;及碘化銅(I),用50 毫升(全部體積之4%)TEA清洗漏斗並攪拌5分鐘。加入全部 量自以上步驟3合成法之ΤΒΡΑ並甩100毫升(全部體積之 8%)ΤΕΑ清洗漏斗。燒瓶加熱至80°C。一旦反應混合物溫 度到達80°C時,取出HPLC樣品供分析。此為原料。(60)-(phenylethynyl) phenyl] adamantyl} benzene (BTPEPAB) as a mixture of meta and para isomers was confirmed by GPC, NMR and HPLC. A mixture of TBPA and BTBEBAPA made by a reaction that includes TBPA is soluble in cyclohexane. Specifically, the experimental procedure of this step 5 synthesis method is as follows. Combine the following equipment: dry 2 liter 3-necked round bottom flask, water condenser, overhead stirrer, heating sleeve, thermocouple, thermal controller unit, dropping funnel, 2-neck adapter, and 30% 〇〇Η Solution N2 inlet-outlet. The flask was purged with osmium for 10 minutes. Weigh the mixture of TBPA and BTPBAB from the synthesis procedure in step 3 above. Triethylamine (TEA) (total calculated TEA volume minus 300 ml) was added to the reaction flask, the overhead stirrer was operated, and then the compound shown in the following sequence was added: dichlorobis (triphenylphosphine) palladium [II] Medium, wash the funnel with 50 ml (4% of the total volume) TEA and stir for 5 minutes; triphenylphosphine, wash the funnel with 50 ml (4% of the total volume) TEA and stir for 5 minutes; and copper (I) iodide Wash the funnel with 50 ml (4% of the total volume) TEA and stir for 5 minutes. Add the entire amount of TBPA synthesized from Step 3 above and shake 100 ml (8% of the total volume) of the TEA cleaning funnel. The flask was heated to 80 ° C. Once the temperature of the reaction mixture reached 80 ° C, a HPLC sample was taken for analysis. This is the raw material.

將經由5 0毫升(總體積的4 %) TEA稀釋之所得苯基乙炔 置於滴液漏斗(該漏斗接於2頸式接合器中之一頸上)。該 經稀釋之苯基乙炔歷3 0分鐘± 1 0分鐘滴加至反應混合物 中。此為放熱反應,以水浴控制溫度。放熱持續3小時。 在8 0°C加熱3小時後,中止反應。在80°C 3小時採樣HPLC 200408662The resulting phenylacetylene diluted by 50 ml (4% of the total volume) of TEA was placed in a dropping funnel (the funnel was attached to one of the necks of a 2-neck adapter). The diluted phenylacetylene was added dropwise to the reaction mixture over 30 minutes ± 10 minutes. This is an exothermic reaction, and the temperature is controlled with a water bath. The exotherm lasted 3 hours. After heating at 80 ° C for 3 hours, the reaction was stopped. Sampling at 80 ° C for 3 hours HPLC 200408662

(61) 反應混合物冷卻至50°C,然後透過Buchner漏斗(丨85毫米) 過濾。粗固體係用600毫升TEA(v/v%=相對於計算過TEA體 積之52%)洗滌二次。濾餅裝入4升繞杯内,内含物在室溫 下用1升TEA(v/v% =相對於計算過TEA體積之87%)攪拌15分 鐘。濾餅透過Buchner*漏斗(185毫米)而粗固體係用300毫升 TEA(v/v%=相對於計算過TEA體積之26%)洗滌。固體被吸 乾隔夜。HPLC,DSC,痕量金屬及UV-VIS在3克粗產物樣品 上進行。 先行技藝與本發明間之差異說明如下。圖11與12顯示下 述異構體的製備,此實例中的羅馬數字對應於圖11與12的 羅馬數字。如背景段落所述1,Reichert的目標為明確結構 物的1,3,5,7-肆[(4-苯基乙炔基)苯基]金剛烷,即,此化合 物的單一對位異構體-1,3,5,7·肆[4·-(苯基乙炔基)苯基]金 剛烷(VIII)。此與僅具有明確結構物(其可藉分析方法特性 化)之此化合物為Reichert工作的目標。(61) The reaction mixture was cooled to 50 ° C and then filtered through a Buchner funnel (85 mm). The crude solid was washed twice with 600 ml of TEA (v / v% = 52% of the calculated TEA volume). The filter cake was placed in a 4-liter winding cup, and the contents were stirred with 1 liter of TEA (v / v% = 87% of the calculated TEA volume) at room temperature for 15 minutes. The filter cake was passed through a Buchner * funnel (185 mm) and the crude solid was washed with 300 ml TEA (v / v% = 26% relative to the calculated TEA volume). The solids were allowed to dry overnight. HPLC, DSC, trace metals and UV-VIS were performed on a 3 g sample of the crude product. The differences between the prior art and the present invention are explained below. Figures 11 and 12 show the preparation of the following isomers. The Roman numerals in this example correspond to the Roman numerals of Figures 11 and 12. As stated in the background paragraph 1, Reichert's goal is to define the structure's 1,3,5,7-[[4-phenylethynyl) phenyl] adamantane, that is, the single para isomer of this compound -1,3,5,7 · [4 ·-(phenylethynyl) phenyl] adamantane (VIII). This and this compound, which has only a well-defined structure that can be characterized by analytical methods, is the goal of Reichert's work.

Reichert的計畫可實現下面序列:.- 1,3,5,7-四溴金剛烷(I)— 1,3,5,7-肆(4,-溴笨基)金岡丨j烷 (11)(對位異構體)—1,3,5,7-肆[4、(苯基乙炔基)笨基]]金剛 烷(VIII)(對位異構體)Reichert's plan can achieve the following sequence: .- 1,3,5,7-tetrabromoadamantane (I) — 1,3,5,7- ((4, -bromobenzyl) jingang) jane (11 ) (Para-isomer) —1,3,5,7-[[4, (phenylethynyl) benzyl]] adamantane (VIII) (para-isomer)

Reichert在步驟(I)— (II)之失敗在於其ΐ忍為可得ι,3,5,7·肆 (374,-溴笨基)金剛烷(III)- 1,3,5,7-肆(溴苯基)金剛烷的異 構體的混合物,含有接附至金剛烷核之對位與間位溴苯基 的組合(參照以下),且其認為工作目標未實現。為了支持 起見,其說明:”在芳基化期間的缺少區域選擇使我們不 -68- 200408662Reichert's failure in steps (I)-(II) is that its tolerance is available, 3,5,7 · (374, -bromobenzyl) adamantane (III)-1,3,5,7- A mixture of isomers of (bromophenyl) adamantane contains a combination of para- and meta-bromophenyl groups attached to the adamantane core (see below), and it is considered that the work objective has not been achieved. To support it, it states: "The lack of regional selection during arylation keeps us from -68- 200408662

(62) 願進一步對金剛烷進行Friedel-Crafts反應而導致進一步研 究易於形成的1,3,5,7-四苯基金剛烷(VI)的衍生"。為了製備 單一對位異構體-丨,3,5,7-肆[4^(苯基乙炔基)苯基]]金剛烷 (VIII),其設計一種”迂迴程序”如下: 1,3,5,7-四苯基金剛烷(乂1)—1,3,5,7-肆(4,-碘苯基)金剛烷 (VII) — 1,3,5,7-肆[4’-(苯基乙炔基)苯基]金剛烷(VIII) Reichert成功地實現此序列,並單離單一對位異構體 (VIII) ,但此化合物的溶解度成為很低,而無法獲得此化 合物的1:>C NMR光譜。Reichert觀察到:頃發現化合物 3[(VIII)]可足夠溶解於氯仿内,可得4 NMR光譜。然而, 頃發現搜索時間對獲得nC NMR光譜不實際。固態NMR用 以證實產物。’’ Reichert.Diss.(如上)9為了證實此結果, Reichert的化合物用若干標準有機溶劑試驗而發現實質上 在每一種試驗過的有機溶劑中皆不溶解。 換言之,Reichert製備1,3,5,7-肆(3,/4,-溴苯基)金剛烷 (III),但並未以此方向持續,因為此產物並非為具有明確 結構物的單一異構體。繼而,其製備1,3,5,7-肆(4、碘苯基) 金剛燒(VII)的對位異構體’而轉變成丨,3,5,7 -肆[4’-(苯基乙 炔基)苯基]金剛烷(VIII)的單一異構體’其變成不溶性’ 因此無法使用。 申請人等重複1,3,5,7-四溴金剛烷與溴苯的反應若千次 且1,3,5,7-四溴金剛烷與溴笨的反應的分析顯示其並非為 1,3,5,7 -肆(37 4’ -溴苯基)金剛燒(111)(如Reichert提議)’而為 1,3,5,7-肆(31/4,-溴苯基)金剛烷(III)與大約等量1-苯基 200408662(62) Willing to further carry out Friedel-Crafts reaction on adamantane, which will lead to further research on the derivatization of easily formed 1,3,5,7-tetraphenyladamantane (VI) ". In order to prepare a single para-isomer, 丨, 3,5,7-[[4 ^ (phenylethynyl) phenyl]] adamantane (VIII), a "detour procedure" is designed as follows: 1, 3, 5,7-tetraphenyladamantane (乂 1) —1,3,5,7- 肆 (4, -iodophenyl) adamantane (VII) — 1,3,5,7- 肆 [4'- (Phenylethynyl) phenyl] adamantane (VIII) Reichert successfully achieved this sequence and isolated a single para-isomer (VIII), but the solubility of this compound became so low that 1 of this compound could not be obtained : > C NMR spectrum. Reichert observed that compound 3 [(VIII)] was found to be sufficiently soluble in chloroform to obtain a 4 NMR spectrum. However, it was found that the search time was not practical for obtaining nC NMR spectra. Solid state NMR was used to confirm the product. Reichert. Diss. (Ibid.) 9 To confirm this result, Reichert's compounds were tested with several standard organic solvents and found to be insoluble in virtually every organic solvent tested. In other words, Reichert prepared 1,3,5,7-di (3, / 4, -bromophenyl) adamantane (III), but did not continue in this direction because the product was not a single isoform with a well-defined structure Constituency. In turn, it prepares the 1,3,5,7-iso (4, iodophenyl) para-isomer of rimantad (VII) and converts it to 丨, 3,5,7-iso [4 '-(benzene The single isomer of the ethynyl) phenyl] adamantane (VIII) 'which becomes insoluble' cannot be used. Applicants and others repeated the reaction of 1,3,5,7-tetrabromoadamantane with bromobenzene if it was a thousand times and the analysis of the reaction of 1,3,5,7-tetrabromoadamantane with bromobenzene showed that it was not 1, 3,5,7-H (37 4'-bromophenyl) adamantine (111) (as proposed by Reichert) 'and 1,3,5,7-H (31/4, -bromophenyl) adamantane (III) Equivalent to approximately 1-phenyl 200 408 662

(63) -3 5 7-參(3,/4,-溴苯基)金剛燒(IV)的混合物。此結論可由 LC-MS研究與元素分析所證貫。 頃發現該反應過程的原因。溴苯已知在Friedel-Crafts反 應的條件下實質上不(63) -3 5 A mixture of 7-ginseng (3, / 4, -bromophenyl) adamantine (IV). This conclusion can be confirmed by LC-MS research and elemental analysis. The cause of the reaction process was found. Bromobenzene is known to be substantially free of the conditions of the Friedel-Crafts reaction.

Dear, J.Org. Chem., 27, 3441-3449( 1962)) · 2 Ρ1ιΒγ->Ρ1ιΗ+Βγ2Φ 當反應混合物中的苯溶度增加時,其開始取代[或(III)中 的溴];苯比例如此高,使迅速建立的平衡導致大約等量 的(III)與(IV) ° 因此,無法獲得1,3,5,7-肆(3,/4,-溴苯基)金剛烷(111)(如 Reichert提議);反而,其具有1,3,5,7-肆(374,-溴苯基)金剛 烷(111)與1-苯基-3,5,7-參(3,/4、溴苯基)金剛烷(以)的约1:1 混合物。 為了變換平衡朝向1,3,5,7-肆(3,/4、溴苯基)金剛烷(in) 側,在溴化链存在下藉新鮮部分的溴苯處理1,3,5,7-四溴金 鲁 剛烷與溴苯的固體反應產物肆(3,/4,-溴苯基)金剛 烷(III)與卜苯基- 3,5,7-參(3,/4、溴苯基)金剛烷(IV)的1 : 1違 合物]。结杲,純溴苯直接更換^苯基-3,5,7-參(3,/4、溴笨 基)金剛炫(IV)中的笨基,使待解決產物在30秒内包含大约 ^ 90-9 5% 1,3,:>,7-肆(3’/4、溴笨基)金剛烷(ΙΠ”此情況在室遮 , 下觀察约5- 10分鐘’其後緩慢增加苯的濃度導致丨-苯基 ’ -3,5,7-參(374f-溴苯基)金剛烷(IV)濃度的增加,若干小時 •70- 200408662 (64) 内,用大約相等濃度的1,3,5,7-肆(3’/4f-溴苯基)金剛烷(III) 與1-苯基- 3,5,7-參(3’/4、溴苯基)金剛烷(IV)再確立平衡。 因此,1,3,5,7-肆(3’/4、溴苯基)金剛烷(III) (Reichert合成 · 者)可在溴化鋁存在下藉1,3,5,7-四溴金剛烷與溴苯的固體 / 反應產物的第二處理製備。 1,3,5,7-肆(3·/4’-溴苯基)金剛烷(III)與苯基乙炔受Heck反 應提供一種95- 97重量%1,3,5,7-四[374、(苯基乙炔基)苯基] 金剛烷(V)(形成的對位與間位異構體之混合物。形成之五 種異構體包括(1)對位,對位,對位,對位-;(2)對位,對 ® 位,對位,間位-;(3)對位,對位,間位,間位-;(4)對位, 間位,間位,間位-;及(5)間位,簡位,間位,間位-。痕 量鄰位異構體亦可存在。)與3〇重量% 1,3/4-雙{Γ,3’,5'-參 [3 ”/4”-苯基乙炔基]苯基}金剛烷基}苯(形成14個異構體。) 之新穎混合物,其係由GPC,NMR及HPLC證實並可溶解於 甲苯、二甲苯、環己酮、苯曱醚、丙二醇甲醚醋酸酯、均 三甲苯、醋酸環己酯等内。例如,在環己酮内的溶解度為 〉20%。此特性使其可旋塗,其可確保此材料的實際使用, 尤其在層壓材料與半導體的領域中。 因此,本發明製備的中間體1,3,5,7-肆(3’/4、溴苯基)金剛 烷(III)提供機會製造1,3,5,7-四[3’/4f-(苯基乙炔基)苯基]金 剛烷(乂)與1,3/私雙{1|,3|,5、參[3"/4'苯基乙炔基]苯基}金 : 剛烷基}苯(對位與問位異構體的可溶性混合物),其可用 : 作熱固性組份(a)。 實例6 -71 - 200408662Dear, J. Org. Chem., 27, 3441-3449 (1962)) · 2 P1ιΒγ- > P1ιΗ + Βγ2Φ As the solubility of benzene in the reaction mixture increases, it begins to replace [or bromine in (III)] The ratio of benzene is so high that the rapidly established equilibrium results in approximately equal amounts of (III) and (IV) °. Therefore, 1,3,5,7-di (3, / 4, -bromophenyl) adamantane cannot be obtained (111) (as proposed by Reichert); instead, it has 1,3,5,7-((374, -bromophenyl) adamantane (111) and 1-phenyl-3,5,7-ginseng (3 , / 4, bromophenyl) adamantane (to) about 1: 1 mixture. In order to shift the equilibrium towards the 1,3,5,7- (3, / 4, bromophenyl) adamantane (in) side, the fresh part of bromobenzene was used to treat 1,3,5,7 in the presence of a brominated chain -The solid reaction product of tetrabromoadamantane and bromobenzene (3, / 4, -bromophenyl) adamantane (III) and phenylphenyl-3,5,7-shen (3, / 4, bromophenyl) ) 1: 1 complex of adamantane (IV)]. As a result, pure bromobenzene was replaced directly by ^ -3,5,7-bromo (3, / 4, bromo-benzyl) Benzyl in King Kong Hyun (IV), so that the product to be resolved contained about ^ in 30 seconds. 90-9 5% 1,3 ,: >, 7-Di (3 '/ 4, bromobenzyl) adamantane (III) This situation is under a room shade, and observed for about 5-10 minutes', and then slowly increase benzene The concentration of 丨 -phenyl '-3,5,7-shen (374f-bromophenyl) adamantane (IV) increased, several hours • 70- 200408662 (64), using approximately the same concentration of 1, 3,5,7- (3 '/ 4f-bromophenyl) adamantane (III) and 1-phenyl-3,5,7-shen (3' / 4, bromophenyl) adamantane (IV) Re-establish the balance. Therefore, 1,3,5,7- (3 '/ 4, bromophenyl) adamantane (III) (reichert synthesis) can be borrowed in the presence of aluminum bromide 1,3,5, 7-tetrabromoadamantane and bromobenzene solid / reaction product prepared by the second treatment. 1,3,5,7- (3 · / 4'-bromophenyl) adamantane (III) and phenylacetylene The Heck reaction provides a 95-97 wt% 1,3,5,7-tetrakis [374, (phenylethynyl) phenyl] adamantane (V) (a mixture of para and meta isomers formed. Shape The five isomers include (1) para, para, para, para-; (2) para, para®, para, meta-; (3) para, para, meta (4) para, meta, meta, meta-; and (5) meta, simple, meta, meta-. Trace ortho isomers can also exist. ) With 30% by weight of 1,3 / 4-bis {Γ, 3 ', 5'-para [3 ”/ 4” -phenylethynyl] phenyl} adamantyl} benzene (14 isomers are formed .) A novel mixture which is confirmed by GPC, NMR and HPLC and is soluble in toluene, xylene, cyclohexanone, phenyl ether, propylene glycol methyl ether acetate, mesitylene, cyclohexyl acetate, etc. For example The solubility in cyclohexanone is> 20%. This characteristic makes it spin-coatable, which can ensure the practical use of this material, especially in the field of laminates and semiconductors. Therefore, the intermediate 1 prepared by the present invention , 3,5,7- (3 '/ 4, bromophenyl) adamantane (III) provides opportunities to make 1,3,5,7-tetrakis [3' / 4f- (phenylethynyl) phenyl] Adamantane (乂) and 1,3 / private bis {1 |, 3 |, 5, and [3 " / 4'phenylethynyl] phenyl} gold: adamantyl} . (Soluble mixture of para-isomer and Q), which may be used: as the thermosetting component (a) Example 6 -71--200408662

(65) 此實例例示另一熱固性組份(a)的製備。 步驟1 :間位與對位溴二笨乙炔異構體的合成(65) This example illustrates the preparation of another thermosetting component (a). Step 1: Synthesis of meta- and para-bromodibenzylidene isomers

在設有加成漏斗與氮氣入口的500毫升3頸式圓底燒瓶 中,加入4-碘溴苯(25.01克,88·37毫莫耳)、三乙胺(300毫 升)、雙(三苯膦)鈀[II]氯(0.82克)及碘化銅[Ι](0.54克然 後,緩慢加入苯基乙炔(9·025克,88.37毫莫耳)於三乙胺(50 毫升)内的溶液,溶液的溫度攪拌保持在35°C下。在加成 完成後,混合物攪拌另外4小時。溶劑在旋轉式蒸發器上 蒸發而將200毫升水加入殘餘物中。產物用二氯甲烷(2x150 毫升)萃取。組合有機層,溶劑藉旋轉式蒸發器除去。殘 餘物用80毫升己烷洗滌並過濾。HPLC顯示純產物.(產率, 19.5克,86%)。附加純化係.藉短矽柱式層析術(洗提物為: 甲苯與己烷的1 : 2混合物)。在溶劑移除後,可得白色結 晶固體。產物的純度係藉GC/MS於丙酮溶液内特性化,及 進一步藉質子NMR特性化。 步驟2 :間位輿對位乙炔二笨乙炔的合成 (^-〇ξ€-〇·βγ ~ 〇~c^c^)~c"c 對位乙炔二苯乙炔自對位溴二苯乙炔的合成係以二個步 騾進行。在第一步驟中,對位溴二苯乙炔係使用三甲基甲 •72- 200408662In a 500 ml 3-necked round bottom flask equipped with an addition funnel and a nitrogen inlet, 4-iodobromobenzene (25.01 g, 88.37 mmol), triethylamine (300 ml), and bis (tribenzene) were added. Phosphine) Palladium [II] chloride (0.82 g) and copper iodide [I] (0.54 g) Then slowly add a solution of phenylacetylene (9.025 g, 88.37 mmol) in triethylamine (50 ml) The temperature of the solution was kept stirred at 35 ° C. After the addition was complete, the mixture was stirred for another 4 hours. The solvent was evaporated on a rotary evaporator and 200 ml of water was added to the residue. The product was dichloromethane (2x150 ml) ) Extraction. Combined organic layers, solvent was removed by rotary evaporator. The residue was washed with 80 ml of hexane and filtered. HPLC showed pure product. (Yield, 19.5 g, 86%). Additional purification system. By short silica column Chromatography (eluent: a 1: 2 mixture of toluene and hexane). After the solvent was removed, a white crystalline solid was obtained. The purity of the product was characterized by GC / MS in an acetone solution, and further Characterized by proton NMR. Step 2: Synthesis of meta- and para-acetylene dibenzylacetylene (^ -〇ξ €- · Βγ ~ 〇 ~ c ^ c ^) ~ c " c The synthesis of para-acetylene diphenylacetylene from para-brominated diphenylacetylene is performed in two steps. In the first step, the para-brominated diphenylacetylene system Use of Trimethyl Methyl72-200408662

(66) 矽烷基乙炔(TMSA,如上所示)三甲基甲矽烷基乙炔化,而 再第二步驟中,第一步騾的反應產物轉化成最後端產物。 步騾a( 4-溴二苯乙炔的三甲基甲矽烷基乙炔化作用):4-溴二苯乙炔( 10.285克,40.0毫莫耳)、乙炔基三甲基矽烷 (5.894克,60 ·0毫莫耳)、0.505克(0.73毫莫耳)二氯雙(三苯膦) 鈀[II]觸媒、40毫升無水三乙胺、0.214克(1·12毫莫耳)碘化 銅[I]及0.378克(1.44毫莫耳)三苯膦放入設有架空機械攪摔 器、冷凝器及定位在加熱套筒内之Ν2清除的5升4頸式圓底 燒瓶内。混合物加熱至溫和回流(約88°C )並保持在回流下 歷1.5小時。反應混合物變成稠厚黑色膏狀物並被冷卻。 薄層層析分析顯示原料4-溴二苯乙炔完全轉化成單一產 物。過濾固體並用50毫升三乙胺洗滌,用400毫升水混合 並攪拌30分鐘。過濾固體並用40毫升曱醇洗滌。粗固體係 自500毫升甲醇再結晶。當靜置時,光亮銀色晶體沉降出。 其係藉過濾單離並用2x50毫升甲醇洗滌。可回收4.662克 (42.5%產率)。 步驟b(4-(三曱基甲矽烷基)乙炔二苯乙炔轉化成4-乙炔二 苯乙炔)·· 800毫升無水甲醇、12.68克(46.2毫莫耳)4-(三甲 基甲矽烷基)乙炔二苯乙炔及1.12克無水碳酸鉀裝入設有 氮氣入口、與架空機械攪拌器的1升3頸式圓底燒瓶内。混 合物加熱至50°C。持續攪掉,直到HPLC分析(約3小時)未 偵測到任何原料為止。冷卻反應混合物。粗固體在40毫升 二氯甲烷内攪拌30分鐘並過濾。過濾的懸浮固體藉HPLC 顯示主要為雜質。乾燥並蒸發二氯甲烷濾液以得8.75克固 200408662(66) Silylacetylene (TMSA, as shown above) is trimethylsilylacetylated, and in the second step, the reaction product of the first step (i) is converted to the final product. Step 骡 a (trimethylsilyl acetylation of 4-bromodiphenylacetylene): 4-bromodiphenylacetylene (10.285 g, 40.0 mmol), ethynyltrimethylsilane (5.894 g, 60 · 0 mmol), 0.505 g (0.73 mmol) dichlorobis (triphenylphosphine) palladium [II] catalyst, 40 ml of anhydrous triethylamine, 0.214 g (1.12 mmol) copper iodide [ I] and 0.378 grams (1.44 millimoles) of triphenylphosphine were placed in a 5-liter 4-necked round bottom flask equipped with an overhead mechanical stirrer, a condenser, and N2 removal positioned in a heating sleeve. The mixture was heated to a gentle reflux (about 88 ° C) and kept under reflux for 1.5 hours. The reaction mixture became a thick black paste and was cooled. TLC analysis showed that the starting material, 4-bromodiphenylacetylene, was completely converted into a single product. The solid was filtered and washed with 50 ml of triethylamine, mixed with 400 ml of water and stirred for 30 minutes. The solid was filtered and washed with 40 ml of methanol. The crude solid was recrystallized from 500 ml of methanol. When left to stand, bright silver crystals settle out. It was isolated by filtration and washed with 2 x 50 ml of methanol. Recoverable 4.662 g (42.5% yield). Step b (Conversion of 4- (trimethylsilyl) acetylene diphenylacetylene to 4-acetylene diphenylacetylene) · 800 ml of anhydrous methanol, 12.68 g (46.2 mmol) of 4- (trimethylsilyl) ) Acetylene diphenylacetylene and 1.12 grams of anhydrous potassium carbonate were charged into a 1-liter 3-necked round bottom flask equipped with a nitrogen inlet and an overhead mechanical stirrer. The mixture was heated to 50 ° C. Continue stirring until no starting material is detected by HPLC analysis (approximately 3 hours). The reaction mixture was cooled. The crude solid was stirred in 40 ml of dichloromethane for 30 minutes and filtered. The filtered suspended solids showed mainly impurities by HPLC. The dichloromethane filtrate was dried and evaporated to give 8.75 g of solid 200408662

(67) 體。在爐内進一步乾澡時,最後重量為8.67克,其代表產 率為92.8%。 步驟3 : 1,3,5,7-肆-丨37 4·-「4··-(笨基乙炔基)笨基乙炔基1笨基} 金岡》j 烷(TPEPEPA)輿 1.3/4-雙{ 1’,3’.5、參 f 3π/4”-「4π>-(笨基乙 炔基)笨基乙炔基1笨基ί金剛烷基!笨(ΒΤΡΕΡΕΡΑΒ)之混合 物的合成(67) body. When the bath was further dried in the furnace, the final weight was 8.67 g, which represented a yield of 92.8%. Step 3: 1,3,5,7- 肆-丨 37 4 ·-"(4 ··-(benzylethynyl) benzylethynyl1benzyl} Kaneoka" j alkane (TPEPEPA) 1.3 / 4-bis {1 ', 3'.5, Synthesis of f 3π / 4 "-" 4π >-( Benylethynyl) benzylethynyl 1benzyl adamantyl! Benzyl (ΒΤΡΕΡΕΡΑΒ)

c=cuc = cu

-74 - 200408662 (68)-74-200408662 (68)

TBPA與BTBPAB(如上)之混合物根據纪催化Heck乙炔化 反應的一般規定與4-乙炔二苯乙決反應以得1,3,5,7-肆 -{3’/4f-[4"-(苯基乙炔基)苯基乙決基]笨基}金剛烷 -75 - 200408662 (69) (TPEPEPA)與l,3/4-雙{l,,3f,5,-參{3f,/4,’-[4π-(苯基乙炔基)苯 基乙炔基]苯基}金剛烷基}苯(BTPEPEPAB)之混合物的最 後產物。 實例7 由類似於以上實例5的程序製成的熱固性組份(a) (200克) 裝入燒瓶中。以5.4倍熱固性組份(a)量之環己酮加入燒瓶 中並搖動燒瓶。所用黏著促進劑(b)為聚碳矽烷 (CH2SiH2)q,其中q為20-30,以0.268倍熱固性組份(a)量加入 燒瓶中並搖動。最後溶液包含15重量%熱固性組份(a)及基 於熱固性組份(&)6.7重量%聚碳矽烷黏著促進劑(b)。 關於回流,使用具有磁性攪拌桿的乾燥1升3頸式圓底燒 瓶、具有N2入口-出口的凝水器、具有熱控制器與熱電偶 的油浴及具有接合器的熱電偶。溶液在回流下沸騰約23 小日〒0 反應混合物冷卻至120°C。安裝狄恩-斯塔克收集器並用 甲苯填滿。以〇·1 5倍熱固性組份(a)量(毫升)之甲苯加入回 流的溶液中。增強的沸騰與共沸在130°C下開始並持續約 40分鐘,直到水放出停止為止。反應混合物溫度增至148 °C。甲苯與水自收集器排出並持續共沸,直到蒸餾附加 0.1 65倍熱固性組份(a)量之甲苯與環己酮為止。燒瓶溫度 到達 1 53- 1 55°C ' 反應混合物冷卻至室溫。加入環己酮,使溶液具有15 重量%包含熱固性組份(a)與聚碳矽烷組份黏著促進劑(b) 之本發明組合物。GPC顯示低聚物形成。 -76- 200408662The mixture of TBPA and BTBPAB (above) is reacted with 4-acetylene diphenylacetic acid to obtain 1,3,5,7- 肆-{3 '/ 4f- [4 "-( Phenylethynyl) phenylethenyl] benzyl} adamantane-75-200408662 (69) (TPEPEPA) and 1,3 / 4-bis {l ,, 3f, 5, -see {3f, / 4, The final product of a mixture of '-[4π- (phenylethynyl) phenylethynyl] phenyl} adamantyl} benzene (BTPEPEPAB). Example 7 A thermosetting component (a) (200 g) prepared by a procedure similar to that of Example 5 above was charged into a flask. Cyclohexanone was added to the flask in an amount of 5.4 times the thermosetting component (a) and the flask was shaken. The adhesion promoter (b) used was polycarbosilane (CH2SiH2) q, where q was 20-30, 0.268 times the amount of the thermosetting component (a) was added to the flask and shaken. The final solution contains 15% by weight of thermosetting component (a) and 6.7% by weight of polycarbosilane adhesion promoter (b) based on the thermosetting component (&). Regarding reflux, a dry 1 liter 3-necked round bottom flask with a magnetic stirring rod, a condenser with an N2 inlet-outlet, an oil bath with a thermal controller and a thermocouple, and a thermocouple with an adapter were used. The solution boiled under reflux for about 23 hours. The reaction mixture was cooled to 120 ° C. Install the Dean-Stark collector and fill it with toluene. Toluene was added to the refluxing solution in an amount of 0.1 to 15 times the amount of the thermosetting component (a) (ml). Enhanced boiling and azeotroping started at 130 ° C and continued for about 40 minutes until water evolution ceased. The temperature of the reaction mixture increased to 148 ° C. Toluene and water were discharged from the collector and azeotropically continued until 0.1 65 times the amount of toluene and cyclohexanone as the thermosetting component (a) were added to the distillation. Flask temperature reached 1 53-1 55 ° C 'The reaction mixture was cooled to room temperature. Cyclohexanone was added to make the solution 15% by weight of the composition of the present invention comprising a thermosetting component (a) and a polycarbosilane component adhesion promoter (b). GPC showed oligomer formation. -76- 200408662

(70) 以下實例係關於形成本發明組合物的層與習知組合物 的層 。 實例8 比較物A為Honeywell美國專利5,986,045揭示的聚伸芳 醚。關於實例8,實例7之組合物係使用表II的塗佈條件塗 敷至基材: 表II 步驟 方法 旋轉(RPM) 時間(秒) 1 分配 0 2,8 2 延遲 0 1.7 3 散佈 1000 1 2 4 旋轉 2000 40 5 BSR 1500 6 6 EBR 400 12 7 EBR 800 7 8 乾燥 1000 7 9 乾燥 1500 5 10 結束 0 0.06(70) The following examples relate to the layers forming the composition of the present invention and the layers of the conventional composition. Example 8 Comparative A is a polyarylene ether disclosed by Honeywell U.S. Patent 5,986,045. Regarding Example 8, the composition of Example 7 was applied to the substrate using the coating conditions of Table II: Table II Step Method Rotation (RPM) Time (seconds) 1 Assignment 0 2,8 2 Delay 0 1.7 3 Dispersion 1000 1 2 4 Spin 2000 40 5 BSR 1500 6 6 EBR 400 12 7 EBR 800 7 8 Dry 1000 7 9 Dry 1500 5 10 End 0 0.06

在表II中,BSR表示後側清洗而EBR則表示邊緣清洗。所 用塗佈器為DNS SC-W80A-A VFDLP,·加壓氣體為氦氣,分 配壓力為0.08 MPa,分配速率為1.0毫升/秒及管線内過濾器 為 0.1 微米 PFFV〇lD8S(Millipore,Fuluoroline-S)。 所得旋壓組合物分別在溫度為150°C,200°C及250°C下在 N2(<50 ppm〇2)下烘培1分鐘。爐固化條件為在N2R 40(TC歷 -77- 200408662In Table II, BSR stands for rear side cleaning and EBR stands for edge cleaning. The applicator used was DNS SC-W80A-A VFDLP, the pressurized gas was helium, the distribution pressure was 0.08 MPa, the distribution rate was 1.0 ml / sec, and the in-line filter was 0.1 micron PFFV0D8S (Millipore, Fuluoroline- S). The obtained spinning composition was baked at a temperature of 150 ° C, 200 ° C, and 250 ° C under N2 (< 50 ppm 02) for 1 minute, respectively. The oven curing conditions are at N2R 40 (TC calendar -77- 200408662

60分鐘而在每分鐘5° K下升至250°C。溫度範圍為350°C至450 °C。或者,可使用熱板固化條件為在N2R 350°C至450°C歷 1 - 5分鐘。 所得層根據上述分析試驗法分析。層的特性顯示於表 III。 表ΠΙ 特性 比較物A 實例8 電性: 介電常數(SaiviHx 2.85 2.65 崩潰電壓(MV/cm) >2 >2 熱性: 在400°C/10小時後之收縮率(%) 1.2 1.0 在425°C/10小時後之收縮率(%) 4.0 2.0 在425°C/0-30分鐘後之ITGA失重率 1.2 0.5 在425°C/30-150分鐘後之ITGA失重率 1.6 0.8 Mechanical: τ/c)第一循環 400 >430 Tg(°C)第二循環 400 >450 模數(GPa) 5.0 6.5 硬度(GPa) 0.4 0.8 柱螺拉力娃度以!^) >11 >10 膠帶試驗 通過 通過 折射指數@ 633 nm 1.675 1.627 可與溶劑相容 是60 minutes and rise to 250 ° C at 5 ° K per minute. The temperature range is 350 ° C to 450 ° C. Alternatively, hot plate curing conditions can be used at N2R 350 ° C to 450 ° C for 1-5 minutes. The obtained layer was analyzed according to the analysis test method described above. The properties of the layers are shown in Table III. Table III Properties Comparison A Example 8 Electrical properties: Dielectric constant (SaiviHx 2.85 2.65 Burst voltage (MV / cm) > 2 > 2 Thermal properties: Shrinkage (%) after 400 ° C / 10 hours 1.2 1.0 in Shrinkage (%) after 425 ° C / 10 hours 4.0 2.0 ITGA weight loss rate after 425 ° C / 0-30 minutes 1.2 0.5 ITGA weight loss rate after 425 ° C / 30-150 minutes 1.6 0.8 Mechanical: τ / c) First cycle 400 > 430 Tg (° C) Second cycle 400 > 450 modulus (GPa) 5.0 6.5 Hardness (GPa) 0.4 0.8 The tensile strength of the stud screw is in the form of ^) > 11 > 10 Tape test passes refractive index @ 633 nm 1.675 1.627 Compatible with solvents Yes

-78 - 200408662-78-200408662

(72) 目視檢驗證實無條紋存在。Tg改良顯然可用於困難高溫加 工環境而模數改良可促進產物的整合性。 實例9 - 1 1 比較物B為100%熱固性組份(a),因此,不含黏著促進劑 (b)。關於實例9 - U,除了改變聚碳矽烷黏著促進劑之量以 外,根據實例8以產生表IV的組合物。所用的聚碳矽烷組 份(b)為(CH2SiH2)q,其中 q為 20-30。(72) Visual inspection confirmed no streaks. The Tg improvement can obviously be used in difficult high-temperature processing environments, and the modulus improvement can promote product integration. Example 9-1 1 Comparative B is a 100% thermosetting component (a) and therefore does not contain an adhesion promoter (b). Regarding Examples 9-U, except changing the amount of polycarbosilane adhesion promoter, according to Example 8 to produce the composition of Table IV. The polycarbosilane component (b) used is (CH2SiH2) q, where q is 20-30.

表IV 比較物B 實例9 實例10 實例11 組份〇3)(重量%) 0 3 6.7 10 折射指數: 烘烤後 1.702 1.693 1.628 1.676 固化後 1.629 1.619 1.614 1.615 在425°C/10小時退火後 未測定 1.612 1.607 1.606 厚度:(埃) 烘烤後 8449 8134 8629 8452 固化後 9052 8711 9147 8898 在425°C/10小時退火後 未測定 8608 9019 8775 厚度改變(%): 烘烤對固化 7.1 7.0 6.0 5.3 固化對退火 未測定 -1.2 -1.4 -1.4 註: 膠帶試驗,As-prep 通過 通過 通過 通過 沸水後之膠帶試驗 失敗 通過 通過 通過 柱螺拉力強度 0 9.4 9.1 6.1 • 79- 200408662Table IV Comparative B Example 9 Example 10 Example 11 Component 03) (% by weight) 0 3 6.7 10 Refractive index: 1.702 1.693 1.628 1.676 after curing 1.629 1.619 1.614 1.615 after curing Not after annealing at 425 ° C / 10 hours Measurement 1.612 1.607 1.606 Thickness: (A) After baking 8449 8134 8629 8452 After curing 9052 8711 9147 8898 Not measured after annealing at 425 ° C / 10 hours 8608 9019 8775 Thickness change (%): Baking versus curing 7.1 7.0 6.0 5.3 Cured versus annealed not determined -1.2 -1.4 -1.4 Note: Tape test, As-prep passed Passed the test after passing boiling water failed Passed the tensile strength of the stud 0 9.4 9.1 6.1 • 79- 200408662

因此,已經揭示產生低介電常數聚合物之組合物與方法 的特定具體例與應用。然而,熟悉此技藝者當可明白,除 了已述者以外,在不脫離本發明觀念外可對其作各種修 改。因此,除了所附申請專利範圍的精神以外,本發明之 主要物質不受限制。此外,在闡明說明書與申請專利範圍 中,所有術語應以最廣泛方式闡明而與上下文一致。特別 是,術語”包含”與”包括π應指為元素、組份或非絕對性方 式的步騾,指示參考的元素、組份或步驟可呈現或使用,Therefore, specific examples and applications of compositions and methods for producing low dielectric constant polymers have been disclosed. However, those skilled in the art will understand that, besides those already described, various modifications can be made without departing from the concept of the invention. Therefore, except for the spirit of the scope of the attached patent application, the main substance of the present invention is not limited. In addition, in clarifying the scope of the specification and patent application, all terms should be set forth in the broadest manner consistent with the context. In particular, the terms "comprising" and "including π" shall refer to steps that are elements, components, or non-absolute, indicating that the referenced element, component, or step may be presented or used,

或與其他未明白參考的元素、組份或步騾組合。Or in combination with other elements, components, or steps that are not clearly referenced.

-80--80-

Claims (1)

200408662 拾、申請專利範圍 1. 一種組合物,其包含:(a)熱固性組份,其中熱固性組 份包含具有以下結構物的单體 Ri200408662 Patent application scope 1. A composition comprising: (a) a thermosetting component, wherein the thermosetting component comprises a monomer Ri having the following structure 具有以下結構物的二聚物 Ri R4Dimer Ri R4 R3 RsR3 Rs 或該單體與該二聚物的混合物,其中Y係選自籠狀化 合物與矽原子;Ri,R2,R3,R4,R5及R6獨立選自芳基、 支鏈芳基及伸芳醚;芳基、支鏈芳基及伸芳醚中至少 一個具有乙炔基;117為芳基或經取代芳基;及該Ri, R2,R3,R4,R5及尺6中至少一個包含至少二個異構體; 及 (b)黏著促進劑,包含具有至少雙官能度之化合物,其 中雙官能度;可相同或不同,第一官能度可與該熱固性 組份(a)交互'作用而當該組合物塗敷至該基材時,第二 官能度可與基材交互作用。 2.如申請專利範圍第1項之組合物,其中該芳基包含選自 (苯基乙炔基)苯基、苯基乙炔基(苯基乙炔基)苯基及 200408662Or a mixture of the monomer and the dimer, wherein Y is selected from cage compounds and silicon atoms; Ri, R2, R3, R4, R5, and R6 are independently selected from aryl, branched aryl, and arylene ether; At least one of aryl, branched aryl, and arylene ether has ethynyl; 117 is aryl or substituted aryl; and at least one of Ri, R2, R3, R4, R5 and Rule 6 contains at least two iso Structure; and (b) an adhesion promoter comprising a compound having at least difunctionality, wherein the difunctionality; may be the same or different, and the first functionality may interact with the thermosetting component (a) when the combination When an object is applied to the substrate, the second functionality may interact with the substrate. 2. The composition as claimed in claim 1, wherein the aryl group comprises a group selected from (phenylethynyl) phenyl, phenylethynyl (phenylethynyl) phenyl, and 200408662. (苯基乙炔基)苯基苯基所組成之群的部分。 3 .如申請專利範圍第1項之組合物,其中該Y係選自金剛 烷或金鋼烷所組成之群。 4. 如申請專利範圍第1項之組合物,其中該單體存在。 5. 如申請專利範圍第4項之組合物,其中該單體為1,3,5,7-肆[3’/4’-(苯基乙炔基)苯基]金剛烷。 6. 如申請專利範圍第1項之組合物,其中該二聚物存在。 7. 如申請專利範圍第6項之組合物,其中該二聚物為1,3/4-雙{Γ,3、5^參[3”/4”-(苯基乙炔基)苯基]金剛烷基}苯。 8. 如申請專利範圍第1項之組合物,其中該單體與該二聚 物之混合物存在。 9. 如申請專利範圍第8項之組合物,其中該單體為1,3,5,7-肆[3’/4^(苯基乙炔基)苯基]金剛烷而該二聚物為1,3/4-雙{ 1·,3’,5·-參[3&quot;/4”-(苯基乙炔基)苯基]金剛烷基·}苯。 10. 如申請專利範圍第1項之組合物,其中該至少二個異構 體為間位與對位異構體。 11. 如申請專利範圍第1項之組合物,其中該黏著促進劑(b) 係選自以下所組成之群: (i)式(I)的聚碳矽烷: Η-Si—-Rg- R10-Si— Rn R12Si—Rj4- 〇—Rl3 Rl5Si —Rir I R16 a b d 200408662 其中Rs,R14及R17各獨立代表經取代或未經取代伸烷 基、環伸烷基、伸乙晞基、伸烯丙基或伸芳基;R9, R10,Rn,R12,R15及Rl6各獨立代表氫原子、烷基、伸 烷基、乙晞基、環烷基、缔丙基、芳基或伸芳基並可 為直鏈或支鏈;R13代表有機矽、矽烷基、矽氧基或有 機基;及a , b , c與di手合[4Sa+b+c+d&lt;100,000]白勺條件, 及b與c與d可共同或獨立為零;Part of a group consisting of (phenylethynyl) phenylphenyl. 3. The composition according to item 1 of the patent application scope, wherein the Y is selected from the group consisting of adamantane or adamantane. 4. The composition as claimed in claim 1, wherein the monomer is present. 5. The composition according to item 4 of the patent application, wherein the monomer is 1,3,5,7-[[3 '/ 4'-(phenylethynyl) phenyl] adamantane. 6. The composition of claim 1 in which the dimer is present. 7. The composition according to item 6 of the patent application, wherein the dimer is 1,3 / 4-bis {Γ, 3,5 ^ reference [3 ”/ 4”-(phenylethynyl) phenyl] Adamantyl} benzene. 8. The composition as claimed in claim 1 wherein a mixture of the monomer and the dimer is present. 9. The composition as claimed in claim 8 in which the monomer is 1,3,5,7-[[3 '/ 4 ^ (phenylethynyl) phenyl] adamantane and the dimer is 1,3 / 4-bis {1 ·, 3 ', 5 · -reference [3 &quot; / 4 ”-(phenylethynyl) phenyl] adamantyl ·} benzene. 10. As the first item in the scope of patent application Composition, wherein the at least two isomers are meta and para isomers. 11. The composition according to item 1 of the patent application range, wherein the adhesion promoter (b) is selected from the group consisting of Group: (i) Polycarbosilanes of formula (I): Η-Si—-Rg- R10-Si— Rn R12Si—Rj4- 〇—Rl3 Rl5Si —Rir I R16 abd 200408662 where Rs, R14 and R17 each independently represent Substituted or unsubstituted alkylene, cycloalkylene, acetylene, allyl, or aryl; R9, R10, Rn, R12, R15, and R16 each independently represent a hydrogen atom, alkyl, or alkylene Group, ethenyl, cycloalkyl, allyl, aryl, or arylene and may be straight or branched; R13 represents a silicone, silyl, siloxy, or organic group; and a, b, c And [4Sa + b + c + d <100,000] conditions with di, and b and c and d can be zero together or independently; (ii)式(R18)f(R19)gSi(R20)h(R21)i的矽烷,其中 R18,R19,R20 及R21各獨立代表氫、羥基、不飽和或飽和烷基、經取 代或未經取代烷基,其中取代基為胺基或環氧基,不 飽和或飽和淀氧基、不飽和或飽和幾酸基或芳基;及 該R13,R19,R20及R21中至少二個代表氫、羥基、飽和 或不飽和烷氧基、不飽和烷基或不飽和羧酸基;及 g+ h+ i&lt;4 ; (iii)下式的苯酚-甲醛樹脂或低聚物(ii) Silane of formula (R18) f (R19) gSi (R20) h (R21) i, wherein R18, R19, R20 and R21 each independently represent hydrogen, hydroxyl, unsaturated or saturated alkyl, substituted or unsubstituted A substituted alkyl group, wherein the substituent is an amine group or an epoxy group, an unsaturated or saturated alkoxy group, an unsaturated or saturated polyacid group, or an aryl group; and at least two of R13, R19, R20, and R21 represent hydrogen, Hydroxyl, saturated or unsaturated alkoxy, unsaturated alkyl, or unsaturated carboxylic acid groups; and g + h + i &lt;4; (iii) a phenol-formaldehyde resin or oligomer of the formula -[Ι122(:6Η2(〇Η)(Ι123)]γ其中R22為經取代或未經取代烷 基、環伸烷基、乙烯基、烯丙基或芳基;R23為烷基、 伸烷基、伸乙烯基、環伸烷基、伸烯丙基或芳基;及 j=3-100 ; (i v)縮水甘油链; (v) 含有至少一個羧酸基的不飽和羧酸的酯;及 (vi) 乙缔基環狀低聚物或聚合物,其中該環狀基為乙·缔 基、芳族或雜芳族。 12.如申請專利範圍第11項之組合物,其中該黏著促進劑(b) 200408662 為該聚碳矽烷。 13. —種包含如申請專利範圍第1項之組合物的低聚物。 14. 一種包含如申請專利範圍第13項之組合物與溶劑的旋 壓組合物。 15. 如申請專利範圍第14項之旋壓組合物,其中該溶劑為環 己嗣。 16. —種由如申請專利範圍第13項之低聚物製成的聚合物。 17. —種包含如申請專利範圍第16項之聚合物之層。 18. 如申請專利範圍第17項之層,其中該層具有介電常數為 低於3.0 。 19. 一種其上具有如申請專1利範圍第17項之該層中至少一 層的基材。 20. —種其上具有如申請專利範圍第17項之該層中至少二 層的基材。 21. —種包含如申請專利範圍第19項之基材之電氣裝置。-[Ι122 (: 6Η2 (〇Η) (Ι123)] γwherein R22 is a substituted or unsubstituted alkyl group, a cycloalkylene group, a vinyl group, an allyl group or an aryl group; R23 is an alkyl group, an alkylene group , Vinylidene, cycloalkylene, alkenyl or aryl; and j = 3-100; (iv) a glycidyl chain; (v) an ester of an unsaturated carboxylic acid containing at least one carboxylic acid group; and (vi) Ethylene cyclic oligomer or polymer, wherein the cyclic group is ethylene, aromatic or heteroaromatic. 12. The composition according to item 11 of the patent application scope, wherein the adhesion promotion Agent (b) 200408662 is the polycarbosilane. 13. An oligomer containing the composition as claimed in item 1 of the scope of the patent application. 14. A spinning comprising the composition as claimed in item 13 of the scope of the patent application and a solvent Composition. 15. The spinning composition according to item 14 of the patent application, wherein the solvent is cyclohexyl. 16.-a polymer made of an oligomer as item 13 of the patent application. 17. -A layer containing a polymer as claimed in item 16 of the scope of patent application 18. 18. a layer as claimed in item 17 of the scope of patent application, wherein the layer has a dielectric constant of Below 3.0. 19. A substrate having at least one of the layers as claimed in item 17 of the patent scope. 20.-A substrate having at least two of the layers as claimed in item 17 of the patent scope. 21. An electrical device comprising a substrate such as the scope of patent application No. 19. 22. —種改良對基材黏著性的方法,其包括下列步騾: 塗敷組合物層至該基材,該組合物層包含: (a)熱固性組份,其中熱固性組份包含具有以下結構物 的單體 Ri22. A method for improving adhesion to a substrate, comprising the steps of: applying a composition layer to the substrate, the composition layer comprising: (a) a thermosetting component, wherein the thermosetting component comprises a structure having the following structure Monomer Ri 200408662200408662 具有以下結構物的二聚物 Ri r4 Rz R3 ..... R5 R6 或單體與二聚物的混合物,其中γ係選自籠狀化合物 與矽原子;h,R2,R;,R4,115及R6獨立選自芳基、支 鏈芳基及伸芳醚;芳基、支鏈芳基及伸芳醚中至少一 個具有乙炔基;R7為芳基或經取代芳基;及該,r2, R3,R4,R5及R6中至少一個包含至少二個異構體;及 (b)黏著促進劑,包含具有至少雙官能度之化合物,其 中雙官能度可相同或不同,第一官能度可與該熱固性 組份(a)交互作用而第二官能度可與該基材交互作用。 23. 如申請專利範圍第22項之方法,其中該芳基包含選自 (苯基乙炔基)苯基、苯基乙炔基(苯基乙炔基)苯基及 (苯基乙炔基)苯基苯基所組成之群的部分。 24. 如申請專利範圍第22項之方法,其中該Y係選自金剛烷 或金鋼燒所組成之群。 25. 如申請專利範圍第22項之方法,其中該單體存在。 26. 如申請專利範圍第25項之方法,其中該單體為1,3,5,7-肆[3 74’-(苯基乙炔基)苯基]金剛烷。 27. 如申請專利範圍第22項之方法,其中該二聚物存在。 28. 如申請專利範圍第27項之方法,其中該二聚物為1,3/4- 200408662Dimer Ri r4 Rz R3 ..... R5 R6 or a mixture of monomers and dimers having the following structures, wherein γ is selected from cage compounds and silicon atoms; h, R2, R ;, R4, 115 and R6 are independently selected from aryl, branched aryl and arylene ether; at least one of aryl, branched aryl and arylene ether has ethynyl; R7 is aryl or substituted aryl; and, r2 , At least one of R3, R4, R5 and R6 contains at least two isomers; and (b) an adhesion promoter comprising a compound having at least difunctionality, wherein the difunctionality may be the same or different, and the first functionality may be Interact with the thermosetting component (a) and the second functionality may interact with the substrate. 23. The method of claim 22, wherein the aryl group comprises a group selected from (phenylethynyl) phenyl, phenylethynyl (phenylethynyl) phenyl, and (phenylethynyl) phenylbenzene Part of a group of foundations. 24. The method of claim 22, wherein the Y is selected from the group consisting of adamantane or gold steel. 25. The method of claim 22, wherein the monomer is present. 26. The method as claimed in claim 25, wherein the monomer is 1,3,5,7-methyl [3 74 '-(phenylethynyl) phenyl] adamantane. 27. The method of claim 22, wherein the dimer is present. 28. The method of claim 27, wherein the dimer is 1,3 / 4- 200408662 雙{ Γ,3’,5’-參[3”/4&quot;-(苯基乙炔基)苯基]金剛烷基}苯β 29. 如申請專利範圍第22項之方法,其中該單體與該二聚物 之混合物存在。 30. 如申請專利範圍第29項之方法,其中該單體為1,3,5,7· 肆[3’/4’-(苯基乙炔基)苯基]金剛烷而該二聚物為1,3/4-雙{ Γ,3、5’-參[3’·/4π-(苯基乙炔基)苯基]金剛烷基}苯。 31. 如申請專利範圍第22項之方法,其中該至少二個異構體 為間位與對位異構體。 32. 如申請專利範圍第22項之方法,其中該黏著促進劑(b) 係選自以下所組成之群: (i)式(I)的聚碳矽烷: Η I Si- R9 Rs ^10 -Si— Rn I12 •Si—R14· 〇—r13 a b R15 Si —R17-- I R16 -dBi {Γ, 3 ', 5'-reference [3 ”/ 4 &quot;-( phenylethynyl) phenyl] adamantyl} benzene β 29. The method according to item 22 of the patent application, wherein the monomer and A mixture of the dimers exists. 30. The method of claim 29, wherein the monomer is 1,3,5,7 · [3 '/ 4'-(phenylethynyl) phenyl] Adamantane and the dimer is 1,3 / 4-bis {Γ, 3,5'-reference [3 '· / 4π- (phenylethynyl) phenyl] adamantyl} benzene. 31. If applied The method according to item 22 of the patent, wherein the at least two isomers are meta and para isomers. 32. The method according to item 22 of the patent application, wherein the adhesion promoter (b) is selected from the following Compositions: (i) Polycarbosilanes of formula (I): Η I Si- R9 Rs ^ 10 -Si- Rn I12 • Si-R14 · 〇-r13 ab R15 Si —R17-- I R16 -d 其中Rs,Rl4及R17各獨立代表經取代或未經取代伸烷 基、環伸烷基、伸乙缔基、伸晞丙基或伸芳基;R9, Rl〇,Rll,Rl2,Rl5及尺16各獨立代表氫原子、燒基、伸 烷基、乙缔基、環伸烷基、·烯丙基、芳基或伸芳基並 可為直鏈或支鏈;Rl3代表有機夸、碎燒基、碎氧基或 有機基;及a,b,c與d符合[4Sa+b+c+dU00,000]的條件, 及b與c與d可共同或獨立為零; -6- 200408662Among them, Rs, Rl4 and R17 each independently represent substituted or unsubstituted alkylene, cycloalkylene, ethylene, propyl or aryl; R9, R10, Rll, Rl2, Rl5 and ruler 16 each independently represents a hydrogen atom, an alkyl group, an alkylene group, an ethylene group, a cycloalkylene group, an allyl group, an aryl group, or an alkylene group and may be a straight chain or a branched chain; R13 represents an organic compound Group, alkoxy group or organic group; and a, b, c and d meet the conditions of [4Sa + b + c + dU00,000], and b and c and d may be zero together or independently; -6- 200408662 (出式(18)『(1^9)31(1120)“1121)丨的矽烷,其中1^8,1^9,尺20 及R21各獨立代表氫、羥基、不飽和或飽和烷基、經取 代或未經取代烷基,其中取代基為胺基或環氧基,不 飽和或飽和燒氧基、不飽和或飽和幾酸基、或芳基; 及該R18,Ri9,R2〇及R21中至少二個代表氫、羥基、飽 和或不飽和烷氧基、不飽和烷基或不飽和羧酸基;及 f+ g+ h+ i&lt;4 ; (iii)下式的苯酚-甲醛樹脂或低聚物 -[R22C6H2(〇H)(R23)]j-其中R22為經取代或未經取代伸烷 基、環伸烷基、乙烯基、烯丙基或芳基;R23為烷基、 伸烷基、伸乙烯基、環伸烷產、伸烯丙基或芳基;及 j=3-100 ; (i v)水甘油链, (v) 含有至少一個羧酸基的不飽和羧酸的酯;及 (vi) 乙婦基環狀低聚物或聚合物,其中該環狀基為吡 症、芳族或雜芳族。 33. 如申請專利範圍第32項之組合物,其中該黏著促進劑(b) 為該聚碳矽烷。 34. —種組合物,其包含: (a)具有以下結構物的熱固性單體 200408662 其中Ar為芳基;R、,R、,Rf3,R’4,Rf5及Rf6獨立選自 芳基、支鏈芳基及伸芳醚,及無取代;及其中芳基、 支鏈芳基及伸芳醚各具有至少一個乙炔基;及 (b)黏著促進劑,包含具有至少雙官能度之化合物, 其中雙官能度可相同或不同,第一官能度可與熱 固性組份(a)交互作用而當該組合物塗敷至基材 時,第二官能度可與基材交互作用β 35.如申請專利範圍第34項之組合物,其中該黏著促進劑(b) 係選自以下所組成之群: (i)式(I)的聚碳矽烷: Η ISi- R9 Rg* Rio-Si— R11 r12•Si—R24- o—r13 Rl5 Si—R17 a b R16 一 d 其中Rs,1^4及各獨立代表經取代或未經取代伸烷 基、環伸烷基、伸乙埽基、伸烯丙基或伸芳基;R9, R10,Rn,Rl2,Rl5及Rl6各獨立代表氫原子、烷基、伸 烷基、乙·烯基、環烷基、烯丙基、芳基或伸芳基並可 為直鏈或支鏈;Rn代表有機矽、矽烷基、矽氧基或有 機基;及a , b , c與d符合[4&lt;a+b+c+1 00,000]的條件, 及b與c與d可共同或獨立為零; (ii)式(Rl8)f(Rl9)sSi(R20)h(R21)i的矽烷,其中 R18,R19,R20 200408662(The formula (18) "(1 ^ 9) 31 (1120)" 1121) 丨, in which 1 ^ 8, 1 ^ 9, feet 20, and R21 each independently represent hydrogen, a hydroxyl group, an unsaturated or saturated alkyl group, A substituted or unsubstituted alkyl group, wherein the substituent is an amine group or an epoxy group, an unsaturated or saturated alkoxy group, an unsaturated or saturated polyacid group, or an aryl group; and the R18, Ri9, R20, and R21 At least two of them represent hydrogen, a hydroxyl group, a saturated or unsaturated alkoxy group, an unsaturated alkyl group or an unsaturated carboxylic acid group; and f + g + h + i &lt;4; (iii) a phenol-formaldehyde resin or oligomer of the formula -[R22C6H2 (〇H) (R23)] j-where R22 is substituted or unsubstituted alkylene, cycloalkylene, vinyl, allyl or aryl; R23 is alkyl, alkylene, Vinylene, cycloalkylene, allylic or aryl; and j = 3-100; (iv) a water glycerol chain, (v) an ester of an unsaturated carboxylic acid containing at least one carboxylic acid group; and ( vi) ethynyl cyclic oligomer or polymer, wherein the cyclic group is pyridox, aromatic, or heteroaromatic. 33. The composition according to item 32 of the patent application, wherein the adhesion promoter (b ) Is the polycarbosilane. 3 4. A composition comprising: (a) a thermosetting monomer 200408662 having the following structure wherein Ar is an aryl group; R, R, Rf3, R'4, Rf5 and Rf6 are independently selected from aryl, branch Chain aryl and arylene ether, and unsubstituted; and aryl, branched aryl and arylene ether each have at least one ethynyl group; and (b) an adhesion promoter comprising a compound having at least difunctionality, wherein The bifunctionality can be the same or different. The first functionality can interact with the thermosetting component (a) and when the composition is applied to a substrate, the second functionality can interact with the substrate. The composition according to item 34, wherein the adhesion promoter (b) is selected from the group consisting of: (i) a polycarbosilane of formula (I): Η ISi- R9 Rg * Rio-Si— R11 r12 • Si—R24— o—r13 Rl5 Si—R17 ab R16—d where Rs, 1 ^ 4 and each independently represent substituted or unsubstituted alkylene, cycloalkylene, ethylidene, or allyl or Rarylene; R9, R10, Rn, Rl2, Rl5 and R16 each independently represent a hydrogen atom, alkyl, alkylene, ethylene alkenyl, cycloalkyl, Propyl, aryl or arylene and may be straight or branched; Rn represents organosilicon, silyl, siloxy or organic; and a, b, c and d conform to [4 &lt; a + b + c +1 00,000], and b and c and d may be zero together or independently; (ii) a silane of formula (R18) f (R19) sSi (R20) h (R21) i, where R18, R19, R20 200408662 及r21各獨立代表氫、羥基、不飽和或飽和烷基、經取 代或未經取代烷基,其中取代基為胺基或環氧基,不 飽和或飽和虎氧基、不飽和或飽和複酸基、或芳基; 及該R1S,R19,R20及R21中至少二個代表氫、羥基、飽 和或不飽和烷氧基、不飽和烷基或不飽和羧酸基;及 f十g+ h+ i&lt;4 ; (iii) 下式的苯酚-甲醛樹月旨或低聚物 -[R22C6H2(〇H)(R23)]r其中R22為經取代或未經取代 伸燒基、環伸燒基、乙蹄基、蹄丙基或芳基;尺23 為烷基、伸烷基、伸乙晞基、環伸烷基、伸烯丙 基或芳基;及j=3-100 ; (iv) 縮水甘油酸; (v) 含有至少一個羧酸基的不飽和羧酸的酯;及 (vi) 乙烯基環狀低聚物或聚合物,其中該環狀基為吡 症、芳族或雜芳族。 36. 如申請專利範圍第35項之組合物,其中該黏著促進劑(b) 包括該聚碳矽烷。 37. —種包含如申請專利範圍第34項之組合物與溶劑的旋 壓組合物。 38. —種包含如申請專利範圍第37項之旋壓組合物,其中該 溶劑為環己酮β 39. —種包含如申請專利範圍第37項之旋签組合物之層。 40. —種製造低介電常數聚合物前軀體的方法,其包括下 列步驟: 200408662And r21 each independently represent hydrogen, hydroxyl, unsaturated or saturated alkyl, substituted or unsubstituted alkyl, wherein the substituent is amine or epoxy, unsaturated or saturated tigeroxy, unsaturated or saturated polyacid Or aryl; and at least two of R1S, R19, R20, and R21 represent hydrogen, hydroxyl, saturated or unsaturated alkoxy, unsaturated alkyl, or unsaturated carboxylic acid group; and f + g + h + i &lt;4; (iii) phenol-formaldehyde tree or oligomer of the formula-[R22C6H2 (〇H) (R23)] r where R22 is a substituted or unsubstituted alkynyl group, cycloendenyl group, ethoxylate Alkyl, alkyl, or aryl; Chin 23 is alkyl, alkylene, ethylidene, cycloalkylene, alkylene, or aryl; and j = 3-100; (iv) glycidic acid (V) an ester of an unsaturated carboxylic acid containing at least one carboxylic acid group; and (vi) a vinyl cyclic oligomer or polymer, wherein the cyclic group is pyridoxine, aromatic, or heteroaromatic. 36. The composition of claim 35, wherein the adhesion promoter (b) includes the polycarbosilane. 37. A spinning composition comprising a composition as described in claim 34 and a solvent. 38. A spin-drying composition as claimed in item 37 of the patent application, wherein the solvent is cyclohexanone β 39. A layer comprising a spin-show composition as claimed in item 37 of the patent application. 40. A method for manufacturing a low dielectric constant polymer precursor, including the following steps: 200408662 (l)提供一種組合物,其包含: (a)熱固性組份,其中該熱固性組份包含具有以下結構 物的單體 Ri(l) Provide a composition comprising: (a) a thermosetting component, wherein the thermosetting component comprises a monomer Ri having the following structure 具有以下結構物的二聚物 r4 Ri Ri R3 χγί/ίΐιΐί R5 R6Dimer r4 Ri Ri R3 χγί / ίΐιΐί R5 R6 或該單體與該二聚物的混合物,其中γ係選自籠狀化 合物與矽原子;Ri,R2,R3,R4,R5及獨立選自芳基、 支鏈芳基及伸芳醚;芳基、支鏈芳基及伸芳醚中至少 一個具有乙炔基;民7為芳基或經取代芳基;及該, R2,R3,R4,R5及R6中至少一個包含至少二個異構體; 及 (b)黏著促進&gt;劑,包含具有至少雙官能度之化合物,其 中雙官能度可相同或不同,第一官能度可與該熱固性 組份(a)交互作用而當該組合物塗敷至該基材時,第二 官能度可與基材交互作用;及 •10- 200408662Or a mixture of the monomer and the dimer, wherein γ is selected from cage compounds and silicon atoms; Ri, R2, R3, R4, R5 and independently selected from aryl, branched aryl, and arylene ether; aryl At least one of the group, branched aryl group and arylene ether has an ethynyl group; 7 is an aryl group or a substituted aryl group; and at least one of R2, R3, R4, R5 and R6 contains at least two isomers ; And (b) an adhesion promoting agent, comprising a compound having at least difunctionality, wherein the difunctionality may be the same or different, and the first functionality may interact with the thermosetting component (a) when the composition is coated When applied to the substrate, the second functionality can interact with the substrate; and • 10- 200408662 (2)在溫度為约30°C至約350°C下處理組合物約〇·5至約 60小時,藉以形成該低介電常數聚合物前軀體。 41. 如申請專利範圍第40項之方法,其中該單體存在。 42. 如申請專利範圍第41項之方法,其中該單體為1,3,5,7-肆[374、(苯基乙炔基)苯基]金剛烷。 43. 如申請專利範圍第40項之方法,其中該二聚物存在。 44. 如申請專利範圍第43項之方法,其中該二聚物為1,3/4-雙{Γ,3’,5、參[3”/4”_(苯基乙炔基)苯基]金剛烷基}苯。 45. 如申請專利範圍第40項之方法,其中該單體與該二聚物 之混合物存在β 46. 如申請專利範圍第45項之組合物,其中該單體為1,3,5,7-肆[3’/4’-(苯基乙炔基)苯基]金剛烷而該二聚物為1,3/4-雙{1’,3\5·-參[3’’/4&quot;-(苯基乙炔基)苯基]金剛烷基}苯。 47. 如申請專利範圍第40項之方法,其中該黏著促進劑(b) 係選自以下所組成之群:(2) The composition is treated at a temperature of about 30 ° C to about 350 ° C for about 0.5 to about 60 hours to form the low dielectric constant polymer precursor. 41. The method of claim 40, wherein the monomer is present. 42. The method of claim 41, wherein the monomer is 1,3,5,7-methyl [374, (phenylethynyl) phenyl] adamantane. 43. The method of claim 40, wherein the dimer is present. 44. The method according to item 43 of the scope of patent application, wherein the dimer is 1,3 / 4-bis {Γ, 3 ', 5, ref [3 ”/ 4” _ (phenylethynyl) phenyl] Adamantyl} benzene. 45. The method as claimed in the scope of patent application No. 40, wherein the mixture of the monomer and the dimer is present in β. 46. The composition, as claimed in the scope of patent application No. 45, wherein the monomer is 1, 3, 5, 7 -[3 '/ 4'-(phenylethynyl) phenyl] adamantane and the dimer is 1,3 / 4-bis {1 ', 3 \ 5 ·-ref [3' '/ 4 &quot; -(Phenylethynyl) phenyl] adamantyl} benzene. 47. The method of claim 40, wherein the adhesion promoter (b) is selected from the group consisting of: (i)式(I)的聚碳矽烷: ΗI Si—R8 R9 ^10-Si— R 11 b R12•Si—Rj4* 〇—R〇 RlS Si—RirI R16 d 其中Rs,R14及R17各獨立代表經取代或未經取代伸烷 基、環伸烷基、伸乙缔基、伸烯丙基或伸芳基;R9, Rio,Rn,Ru,Rn及Ri6各獨立代表氫原子、烷基、伸 -π - 200408662(i) Polycarbosilanes of formula (I): ΗI Si—R8 R9 ^ 10-Si— R 11 b R12 • Si—Rj4 * 〇—R〇R1S Si—RirI R16 d where Rs, R14 and R17 are each independently represented Substituted or unsubstituted alkylene, cycloalkylene, vinylidene, allyl, or aryl; R9, Rio, Rn, Ru, Rn, and Ri6 each independently represent a hydrogen atom, alkyl, or alkylene. -π-200408662 烷基、乙烯基、環烷基、烯丙基、芳基或伸芳基並可 為直鍵或支鏈;R i 3代表有機碎、碎燒基、碎氧基或有 機基;及a ,b , c與d符合[4&lt;a+b+c+d&lt; 100,000]白勺條件’ 及b與c與d可共同或獨立為零;Alkyl, vinyl, cycloalkyl, allyl, aryl, or arylene and may be straight or branched; R i 3 represents organic crushed, crushed, oxy, or organic; and a, b, c and d meet [4 &lt; a + b + c + d &lt; 100,000] conditions' and b, c and d may be zero together or independently; (ii) 式(R18)f(R19)gSi(R20)h(R21)i的矽烷,其中 R18, R19, R20 及R21各獨立代表氫、羥基、不飽和或飽和烷基、經取 代或未經取代烷基,其中取代基為胺基或環氧基,不 飽和或飽和烷氧基、不飽和或飽和羧酸基、或芳基; 及該R18,R19,R20及R21中至少二個代表氫、羥基、飽 和或不飽和烷氧基、不飽和烷基或不飽和羧酸基;及 f+ g+ h+ i&lt;4 ; (iii) 下式的苯酚-甲醛樹脂或低聚物(ii) Silane of formula (R18) f (R19) gSi (R20) h (R21) i, wherein R18, R19, R20 and R21 each independently represent hydrogen, hydroxyl, unsaturated or saturated alkyl, substituted or unsubstituted Substituted alkyl, wherein the substituent is amine or epoxy, unsaturated or saturated alkoxy, unsaturated or saturated carboxylic acid, or aryl; and at least two of R18, R19, R20, and R21 represent hydrogen , Hydroxyl, saturated or unsaturated alkoxy, unsaturated alkyl, or unsaturated carboxylic acid groups; and f + g + h + i &lt;4; (iii) a phenol-formaldehyde resin or oligomer of the formula -[R22C6H2(〇H)(R23)]j-其中R22為經取代或未經取代 伸燒基、環伸烷基、乙缔基、晞丙基或伸芳基; R23為烷基、伸烷基、伸乙晞基、環伸烷基、伸烯 丙基或芳基;及j = 100 ; (iv) 縮水甘油鍵; (v) 含有至少一個羧酸基的不飽和羧酸的酯;及 (vi) 乙烯基環狀低聚物或聚合物,其中該環狀基為吡 啶、芳族或雜芳族3 48. —種製造低介電常數聚合物的方法,其包括下列步騾: (1)提供一種低聚物,其包含(a)熱固性組份,其中該 熱固性組份包含具有以下結構物的單體 -12 - 200408662 Ri-[R22C6H2 (〇H) (R23)] j-where R22 is a substituted or unsubstituted alkynyl group, a cycloalkylene group, an ethylene group, an amidino group or an arylene group; R23 is an alkyl group or an alkylene group Phenylene, ethylidene, cycloalkylene, allylic or aryl; and j = 100; (iv) glycidyl bonds; (v) esters of unsaturated carboxylic acids containing at least one carboxylic acid group; and (vi) a vinyl cyclic oligomer or polymer, wherein the cyclic group is pyridine, aromatic or heteroaromatic 3 48.-a method for manufacturing a low dielectric constant polymer, comprising the following steps: ( 1) Provide an oligomer comprising (a) a thermosetting component, wherein the thermosetting component comprises a monomer having the following structure-12-200408662 Ri 具有以下結構物的二聚物 Ri R4 r2 ^/Ϋ^ΜΙιιι,...... R3 R7 R6 R5Dimer Ri R4 r2 ^ / Ϋ ^ ΜΙιι, ... R3 R7 R6 R5 或該單體與該二聚物的混合物,其中Y係選自籠狀化 合物與矽原子;Ri,R2,R3,R4,115及116獨立選自芳基、 支鍵芳基及伸芳謎;芳基、支鍵芳基及伸芳謎中至少 一個具有乙炔基;R7為芳基或經取代芳基;及該Ri, R2,R3,R4,115及R6中至少一個包含至少二個異構體; 及(b)黏著促進劑,包含具有至少雙官能度之化合物, 其中雙官能度可相同或不同,第一官能度可與該熱固 性組份(a)交互作用而當該組合物塗敷至該基材時,第 二官能度可與基材交互作用;及 (2)聚合該低聚物,藉以形成該低介電常數聚合物,其 中聚合作用包括該乙炔基的化學反應。 49.如申請專利範圍第48項之方法,其中該Y係選自金剛烷 與金鋼烷所組成之群。 50.如申請專利範圍第48項之方法,其中該芳基包含選自 -13 · 200408662Or a mixture of the monomer and the dimer, wherein Y is selected from cage compounds and silicon atoms; Ri, R2, R3, R4, 115 and 116 are independently selected from the group consisting of aryl, branched aryl, and mystery; At least one of aryl, branched aryl, and arylene has ethynyl; R7 is aryl or substituted aryl; and at least one of Ri, R2, R3, R4, 115, and R6 contains at least two isomers And (b) an adhesion promoter comprising a compound having at least difunctionality, wherein the difunctionality may be the same or different, and the first functionality may interact with the thermosetting component (a) when the composition is applied When reaching the substrate, the second functionality can interact with the substrate; and (2) polymerizing the oligomer to form the low dielectric constant polymer, wherein the polymerization includes a chemical reaction of the acetylene group. 49. The method of claim 48, wherein the Y is selected from the group consisting of adamantane and adamantane. 50. The method of claim 48, wherein the aryl group comprises a group selected from -13.200408662 (苯基乙炔基)苯基、苯基乙炔基(苯基乙炔基)苯基及 (苯基乙炔基)苯基苯基所組成之群的部分。 51. 如申請專利範圍第48項之方法,其中芳基、支鏈芳基及 伸芳醚中至少三個具有乙炔基,且其中聚合作用包括 該乙炔基中至少二個的化學反應。 52. 如申請專利範圍第48項之方法,其中所有芳基、支鏈芳 基及伸芳醚皆具有乙炔基,且其中聚合作用包括乙块 基的化學反應。 53. 如申請專利範圍第48項之方法,其中該單體存在。 54. 如申請專利範圍第53項之方法,其中該單體為1,3,5,7-肆[374·-(苯!基乙炔基)苯基]金剛烷。 55. 如申請專利範圍第48項之方法,其中該二聚物存在。 56. 如申請專利範圍第55項之方法,其中該二聚物為1,3/4-雙{ Γ,3、5·-參[3”4”-(苯基乙炔基)苯基]金剛烷基.}苯。 57. 如申請專利範圍第48項之方法,其中該單體與該二聚物 之混合物存在。 58. 如申請專利範圍第57項之方法,其中該單體為1,3,5,7-肆[374、(苯基乙炔基)苯基]金剛烷而該二聚物為1,3/4-雙{1’,3’,5’-參[3”/4”-(苯基乙炔基)苯基]金剛烷基}苯。 59. 如申請專利範圍第48項之方法,其中該至少二個異構體 為間位與對位異構體。 60·如申請專利範圍第48項之方法,其中該熱固性組份(a) 溶解於溶劑内。 61.如申請專利範圍第48項之方法,其中該黏著促進劑(b) 200408662Part of a group consisting of (phenylethynyl) phenyl, phenylethynyl (phenylethynyl) phenyl, and (phenylethynyl) phenylphenyl. 51. The method of claim 48, wherein at least three of the aryl group, the branched chain aryl group, and the diaryl ether have an ethynyl group, and wherein the polymerization includes a chemical reaction of at least two of the ethynyl group. 52. The method of claim 48, in which all aryl, branched-chain aryl, and arylene ethers have ethynyl groups, and wherein the polymerization reaction includes a chemical reaction of ethyl groups. 53. The method of claim 48, wherein the monomer is present. 54. The method of claim 53 in the scope of patent application, wherein the monomer is 1,3,5,7-methyl [374 ·-(phenyl! Ethynyl) phenyl] adamantane. 55. The method of claim 48, wherein the dimer is present. 56. The method according to item 55 of the patent application, wherein the dimer is 1,3 / 4-bis {Γ, 3,5 · -reference [3 ”4”-(phenylethynyl) phenyl] adamantine Alkyl.} Benzene. 57. The method of claim 48, wherein a mixture of the monomer and the dimer is present. 58. The method of claim 57 in the scope of patent application, wherein the monomer is 1,3,5,7-z [374, (phenylethynyl) phenyl] adamantane and the dimer is 1,3 / 4-bis {1 ', 3', 5'-reference [3 "/ 4"-(phenylethynyl) phenyl] adamantyl} benzene. 59. The method of claim 48, wherein the at least two isomers are meta and para isomers. 60. The method of claim 48, wherein the thermosetting component (a) is dissolved in a solvent. 61. The method of claim 48, wherein the adhesion promoter (b) 200408662 係選自以下所組成之群: (i)式(I)的聚碳矽烷: Η I-Si—r8 R9 R10-Si— R11 R12•Si—R14- 〇—R13 Rl5_S|i—Rl7' Rl6 a b d 其中R 8,R14及R 17各獨立代表經取代或未經取代伸烷 基、環伸烷基、伸乙晞基、伸烯丙基或伸芳基;R9, Rio,Rn,R12,Rh及R16各獨立代表氫原子、烷基、伸 烷基、乙缔基、環烷基、烯丙基、芳基或伸芳基並可 為直鏈或支鏈;R13代表有機矽、矽烷基、矽氧基或有 機基;及a,b,c與d符合[4Sa+b+c+dSl00,000]的條件, 及b與c與d可共同或獨立為零; (ii)A (R18)f(Rl9)gSi(R2〇)h(R2i)i的碎燒’其中 Ris,Ri9,R20 及R 21各獨王代表氫、經基、不绝和或飽和燒基、經取 代或未經取代伸烷基,其中取代基為胺基或環氧基, 不飽和或飽和燒氧基、不飽和或飽和幾酸基、或芳基; 汉遠R〖8’ Rl9’ R20及R21中主少二個代衣氮、輕基、绝 和或不飽和'貌氧基、不飽和烷基或不飽和羧酸基;及 f+ g+ h+ i&lt;4 ; (Hi)下式的苯酚-曱醛樹脂或低聚物 -[Κ22〇6Η2(〇Η)(Ι123)]」· -其中R22為經取代或未經取代伸燒 200408662Is selected from the group consisting of: (i) polycarbosilanes of formula (I): Η I-Si—r8 R9 R10-Si— R11 R12 • Si—R14- 〇-R13 Rl5_S | i-Rl7 'Rl6 abd Among them, R 8, R14 and R 17 each independently represent a substituted or unsubstituted alkylene, cycloalkylene, ethenyl, allyl or aryl; R9, Rio, Rn, R12, Rh and R16 each independently represents a hydrogen atom, an alkyl group, an alkylene group, an ethylenyl group, a cycloalkyl group, an allyl group, an aryl group or an arylene group and may be a straight chain or a branched chain; R13 represents an organic silicon, a silyl group, a silicon Oxy or organic groups; and a, b, c and d meet the conditions of [4Sa + b + c + dSl00,000], and b and c and d may be zero together or independently; (ii) A (R18) f (Rl9) gSi (R2〇) h (R2i) i crushed and burned 'where Ris, Ri9, R20, and R 21 each represent the hydrogen, the base, the endless and or saturated base, substituted or unsubstituted Alkyl, in which the substituent is amine or epoxy, unsaturated or saturated alkoxy, unsaturated or saturated carboxylic acid, or aryl; Han Yuan R 〖8 'Rl9' R20 and R21 Substituted nitrogen, light-based, absolute or unsaturated 'appearance oxygen, unsaturated alkyl or Unsaturated carboxylic acid group; and f + g + h + i &lt;4; (Hi) a phenol-formaldehyde resin or oligomer of the formula-[Κ22〇6Η2 (〇Η) (Ι123)] "--wherein R22 is substituted Or without replacement 基、環伸烷基、乙烯基、婦丙基或芳基;r23為烷 基、伸烷基、伸乙烯基、環伸烷基、伸烯丙基或 芳基;及j=3-100; (i v)縮水甘油醚; (v) 含有至少一個羧酸基的不飽和羧酸的酯;及 (vi) 乙烯基環狀低聚物或聚合物,其中該環狀基為吡 淀、芳族或雜芳族。 62. —種旋壓低介電常數材料,其包含: (a) 具有第一芳族部分及第一反應性基團的第一主鏈 與具有第二芳族部分及第二反應性基團的第二主鏈, 其中第一與第二主鏈在交聯反應中藉由第一與1第二反 應性基團交聯,而籠狀結構物物共價地键結至第一與 第二主鏈中至少一個,其中籠狀結構物物包含至少8 個原子;及 (b) 黏著促進劑,包含具有至少雙官能度之化合物,其 中雙官能度可相同或不同,第一官能度可與該第一與 第二主鏈交互作用而當該材料塗敷至該基材時,第二 官能度可與基材交互作用。 63. 如申請專利範圍第62項之旋壓低介電常數材料,其中該 芳族部分包括苯基。 64. 如申請專利範圍第62項之旋壓低介電常數材料,其中第 一反應性基團或第二反應性基團中至少一個包含乙炔 基。 65. 如申請專利範圍第62項之旋壓低介電常數材料,其中籠 200408662Base, cycloalkylene, vinyl, propyl, or aryl; r23 is alkyl, alkylene, vinylidene, cycloalkylene, allyl, or aryl; and j = 3-100; (iv) glycidyl ether; (v) an ester of an unsaturated carboxylic acid containing at least one carboxylic acid group; and (vi) a vinyl cyclic oligomer or polymer, wherein the cyclic group is pyridine, aromatic Or heteroaromatic. 62. A spinning low dielectric constant material, comprising: (a) a first main chain having a first aromatic moiety and a first reactive group and a first main chain having a second aromatic moiety and a second reactive group A second main chain, wherein the first and second main chains are crosslinked by the first and 1 second reactive groups in a crosslinking reaction, and the cage structure is covalently bonded to the first and second At least one of the main chains, in which the cage structure contains at least 8 atoms; and (b) an adhesion promoter comprising a compound having at least difunctionality, wherein the difunctionalities may be the same or different, and the first functionality may be the same as The first and second main chains interact and when the material is applied to the substrate, the second functionality can interact with the substrate. 63. The spin-on low dielectric constant material as claimed in item 62 of the patent application, wherein the aromatic portion includes a phenyl group. 64. The spin-on low-dielectric constant material according to item 62 of the application, wherein at least one of the first reactive group or the second reactive group contains an ethynyl group. 65. For example, the spin-on low dielectric constant material in the scope of patent application No. 62, in which the cage is 200408662 狀結構物包括金剛燒與金鋼垸中至少一個。 66. 如申請專利範圍第62項之旋壓低介電常數材料,其中籠 狀結構物包括取代基。 67. 如申請專利範圍第62項之旋壓低介電常數材料,其中該 黏著促進劑(b)係選自以下所組成之群: (i)式(I)的聚碳矽烷: Η I Si- R9 r8- R10 -Si— Rn r12 •Si—R14- 0—Rl3 a lb c Rl5 'Si —^17-- r16 -dThe structure includes at least one of diamond-fired and gold-steel cymbals. 66. The spin-on low-k material as claimed in item 62 of the patent application, wherein the cage structure includes substituents. 67. The spin-on low dielectric constant material according to item 62 of the application, wherein the adhesion promoter (b) is selected from the group consisting of: (i) a polycarbosilane of formula (I): Η I Si- R9 r8- R10 -Si— Rn r12 • Si—R14- 0—Rl3 a lb c Rl5 'Si — ^ 17-- r16 -d 其中Rs,· R14及Rl7各獨立代表經取代或未經取代伸烷 基、環伸烷基、伸乙烯基、伸烯丙基或伸芳基;R9, Rio,Rh,Ru,Rl5及Rl6各獨立代表氫原子、烷基、伸 烷基、乙烯基、環烷基、烯丙基、芳基或伸芳基並可 為直鏈或支鏈;1113代表有機s夕、碎燒基、&gt;5夕氧基或有 機基;及a,b,c與(1符合[4幺a+b+c+dS 100,000]的條件, 及b與c與d可共同或獨立為零; 及R21各獨立&gt;代表氫、羥基、不飽和或飽和烷基、經取 代或未經取代烷基,其中取代基為胺基或環氧基,不 飽和或绝和燒氧基、不飽和或飽和幾酸基或芳基;及 該R[8,Rl9’R20及中至少二個代表氫、經基、餘和 -17- 200408662Rs, · R14 and Rl7 each independently represent substituted or unsubstituted alkylene, cycloalkylene, vinylene, allyl or aryl; R9, Rio, Rh, Ru, R15 and R16 each Independently represents a hydrogen atom, an alkyl group, an alkylene group, a vinyl group, a cycloalkyl group, an allyl group, an aryl group or an arylene group and may be a straight chain or a branched chain; 1113 represents an organic group, a crushed group, &gt; Oxo or organic group; and a, b, c and (1 meet the conditions of [4 幺 a + b + c + dS 100,000], and b and c and d may be zero together or independently; and R21 each independently &gt; Represents hydrogen, hydroxyl, unsaturated or saturated alkyl, substituted or unsubstituted alkyl, wherein the substituent is amine or epoxy, unsaturated or absolute alkoxy, unsaturated or saturated acid group Or aryl; and R [8, R19'R20 and at least two of them represent hydrogen, meridian, co and -17-200408662 或不飽和烷氧基、不飽和烷基或不飽和羧酸基;及 f-τ- g-h h-r i&lt;4 ; (iii)下式的苯酚-甲醛樹脂或低聚物 -[R22C6H2(OH)(R23)]r其中R22為經取代或未經取代伸烷 基、環伸烷基、乙烯基、晞丙基或芳基;R23為烷 基、伸烷基、伸乙烯基、環伸烷基、伸烯丙基或 芳基;及j = 3-100 ;Or unsaturated alkoxy, unsaturated alkyl, or unsaturated carboxylic acid groups; and f-τ-gh hr i &lt;4; (iii) a phenol-formaldehyde resin or oligomer of the formula-[R22C6H2 (OH) ( R23)] r wherein R22 is substituted or unsubstituted alkylene, cycloalkylene, vinyl, propyl or aryl; R23 is alkyl, alkylene, vinylene, cycloalkylene, Allylic or aryl; and j = 3-100; (i v)縮水甘油謎; (v) 含有至少一個羧酸基的不飽和羧酸的酯;及 (vi) 乙烯基環狀低聚物或聚合物,其中該環狀基為吡 淀、芳族或雜芳族。 68. —種旋壓低介電常數聚合物,包含·· (a)具有垂懸籠狀結構物的聚合物-[〇R24(R25)m〇R26]n-(iv) glycidol puzzle; (v) esters of unsaturated carboxylic acids containing at least one carboxylic acid group; and (vi) vinyl cyclic oligomers or polymers, wherein the cyclic group is pyridine, aromatic Or heteroaromatic. 68. —Spinned low dielectric constant polymer, including (a) a polymer having a hanging cage structure— [〇R24 (R25) m〇R26] n- ,其中R24為-C6H3- ; R25為金剛烷、金鋼烷、(&lt;:ΰΗ5)ρ(金 剛燒)或(C(3H5)p(金鋼·貌);m= 1-3; 11=1-10): ρ=0或 1;及 尺26為2,3,4,5-(四苯基)環二烯酮-1的基或 及(b)黏著促'進劑,包含具有至少雙官能度之化合物, 其中雙官能度可相同或不同,第一官能度可與該聚合 物交互作用而當該聚合物塗敷至該基材時,第二官能 度可與基材交互作用^ -18-, Where R24 is -C6H3-; R25 is adamantane, adamantane, (&lt;: ΰΗ5) ρ (adamantine) or (C (3H5) p (gold steel · appearance); m = 1-3; 11 = 1-10): ρ = 0 or 1; and rule 26 is a group of 2,3,4,5- (tetraphenyl) cyclodienone-1 or (b) an adhesion promoter, comprising A bifunctional compound, where the bifunctionality may be the same or different, the first functionality may interact with the polymer and when the polymer is applied to the substrate, the second functionality may interact with the substrate ^ -18-
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