CN1637610A - 曝光装置和器件制造方法 - Google Patents
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Abstract
一种曝光装置,具有把标线片的图案投影到衬底上的投影光学系统,并经由填充在所述投影光学系统的配置在最靠近所述衬底一侧的光学元件和所述衬底之间的液体而把所述衬底曝光,其特征在于包括:用来自光源的光照明所述标线片的照明光学系统;以及通过调整所述光学元件的温度,调整所述液体的温度的温度调整装置。
Description
技术领域
本发明涉及把标线片(reticule)等原版的图案在晶片等衬底上曝光的曝光装置以及使用该曝光装置的半导体芯片、液晶面板等各种器件的制造方法,特别是涉及通过填充在投影光学系统和衬底之间的液体把衬底曝光的液浸型的曝光装置和使用该曝光装置的器件制造方法。
背景技术
液浸型的曝光装置通过在衬底和投影光学系统的最接近衬底的光学元件之间填充液体,利用该液体的高折射率,提高NA(数值孔径),所以能期待高析像度。
作为液浸型的曝光装置,提出在液体中浸渍衬底整体的方式(例如参照特开平10-303114号公报)、在衬底和投影光学系统的最接近衬底的光学元件之间填充液体的方式(例如参照国际公开第99/49504号小册子)。
图5表示特开平10-303114号公报的结构图。图5是表示保持衬底的衬底夹具102的剖视图。真空吸附衬底,以使其背面与吸附面102a接触。吸附用的真空从真空泵通过真空沟102c排气。而且,成为液浸材料的液体流向保持在吸附面102a上的衬底。这时,加入液体,以使液体不从壁102d溢出到外侧。
在特开平10-303114号公报中,描述液体的温度变化对液体的折射率变化带来的影响。因此,设置温度传感器108a、温度调整器108b、温调控制器108c。通过温调控制器108c和由塞贝克效应元件构成的温度调整器108b控制,以使由温度传感器108a检测的液体温度变为一定。
可是,在所述以往例中存在以下的课题。
图5中,通过配置在多处的温度传感器108a能检测曝光区域外的液体的温度,但是无法在衬底上配置温度传感器108a,所以不能检测曝光区域中的液体温度。即用温调控制器108c和温度调整器108b反馈控制温度传感器108a的检测结果意味着无法进行高精度的温度控制。
因此,曝光区域中的温度控制变得困难,伴随着曝光区域中的液体温度变化,液体的折射率变动,所以析像度下降。
这并不局限于图5那样的把衬底整体浸渍在液体中的液浸型曝光装置。如果对在衬底和最接近衬底的光学元件之间填充液体的液浸型投影曝光装置使用图5的温度控制,则温度传感器108a与液体接触的机会少,即不容易检测液体的温度,所以温度控制变得困难。这样,伴随着曝光区域中的液体温度变化,液体的折射率变动,所以析像度下降。
发明内容
本发明视鉴于上述课题而提出的,其目的在于提供能以高精度稳定地调整在投影光学系统的最靠近衬底一侧的光学元件和衬底之间填充的液体的温度的曝光装置。
为了实现所述目的,作为本发明的一侧面的曝光装置具有把标线片(reticule)(掩模)的图案投影到衬底上的投影光学系统,并经由填充在所述投影光学系统的配置在最靠近所述衬底一侧的光学元件和所述衬底之间的液体而把所述衬底曝光,其特征在于包括:通过调整所述光学元件的温度,调整所述液体的温度的温度调整装置。
此外,作为本发明的另一侧面的曝光装置具有把标线片的图案投影到衬底上的投影光学系统和保持所述衬底的保持构件,并经由填充在所述投影光学系统和所述衬底之间的液体而把所述衬底曝光,其特征在于包括:对所述保持构件所具有的流路供给调整了温度的液体的温度调整装置。
作为本发明的另一侧面的器件制造方法的特征在于包括:使用所述任一个曝光装置把衬底曝光的步骤;把该曝光的衬底显影的步骤。
在以下的参照附图的说明中,本发明其它特征和优势将变得明显,在附图中相似的参照符号表示相同或相似的部分。
附图说明
下面简要说明附图。
附图构成说明书的一部分,描述本发明的实施例,与说明一起用来解释发明的原理。
图1是模式地说明本发明的曝光装置的结构的图。
图2是说明本发明实施例1的衬底夹具和温度调整装置的图。
图3是说明本发明实施例2的衬底夹具和温度调整装置的图。
图4是说明本发明实施例3的投影光学系统的最靠衬底一侧的光学元件和温度调整装置的图。
图5是表示以往技术的液浸型曝光装置的温度调整方法。
图6是表示器件的制造流程的图。
图7是表示图6的晶片工艺的图。
具体实施方式
图1是本发明的曝光装置的图。
在图1中,1是晶片等衬底,2是作为保持衬底1的保持构件的衬底夹具(chuck),作为衬底的保持方法有真空保持的方法和静电保持的方法。3是衬底台,希望具有围绕X、Y、Z各轴驱动衬底的6轴驱动轴。4是台底盘,衬底台3气悬浮或磁悬浮在台底盘4上驱动。5是投影光学系统,是把未图示的标线片(reticule)(掩模)的图案投影到衬底1上的光学系统。须指出的是,在投影光学系统5的上部具有标线片,标线片搭载在标线片台上,与衬底台3同步扫描驱动,但是同样未图示。作为光源,能使用ArF受激准分子激光器或F2激光器。6是液体,在液浸型投影曝光装置中,在衬底1和投影光学系统5的最接近衬底1的光学元件之间填充液体6。须指出的是,当光源为ArF受激准分子激光器时,液体6主要使用水,当F2激光时,使用氟化化合物。而且,7是液体喷嘴,向衬底1和投影光学系统5的最接近衬底1的光学元件之间供给液体6以及回收液体6。8是温度调整装置,把调整了温度的温度调整水向形成了成为温度调整用的流路的水路的衬底夹具2内流动。此外,9是控制部,进行衬底台3的位置控制等装置整体的驱动的计测控制。
图2是说明实施例1的衬底夹具2的图。图2的上图表示衬底夹具2的截面,下图表示其A-A截面。
在图2中,2a是突起(突起部)。突起2a与衬底1的背面接触而保持衬底,为了防止在衬底1的背面和衬底夹具2之间混入异物时等衬底1的平面度的恶化,衬底夹具2的表面采用突起2a的构造,从而减少接触面积。2b是温度调整用的水路。在衬底夹具2内形成水路2b,通过把调整了温度的温度调整水流向水路2b中,进行衬底夹具2的温度调整。须指出的是,希望用温度调整装置8进行温度调整,从而使温度调整水变为给定范围内的温度。最好使其尽可能分布在衬底夹具2的整个面上地形成水路2b。须指出的是,衬底的保持方法有真空保持和静电保持,但是为此的管道、布线未图示。
通常,衬底夹具2由SiC等陶瓷形成。因此,难以在衬底夹具2的内部形成水路。因此,首先至少以二部分结构生成各部分,通过把它们粘贴在一起,生成一个衬底夹具2。例如,分别生成比A-A截面靠上部即保持衬底1的一侧、比A-A截面靠下部即衬底台3一侧等两种,然后用接合或阳极接合等方式粘贴在一起。这时,在保持衬底1的一侧、或衬底台3的至少任意一方形成水路。须指出的是,流路并不局限于图2的形状,可以是任意的,例如不是在衬底夹具内部,而是设置在衬底夹具的周围。此外,在本实施例中对温度调整用的流体使用水,但是并不局限于此,可以是温度调整水以外的液体或气体。进一步,根据来自未图示的控制部9的曝光光照射信息(对衬底1或液体6的累计曝光量等信息),温度调整装置8降低温度调整水的温度,从而在曝光中上升的衬底1和未图示的液体6的温度抵消。
根据以上说明的本实施例,通过使调整了温度的温度调整水流过衬底夹具2的流路,衬底夹具2的温度的温度调整成为可能。衬底夹具2的热容量比衬底1或液体6的热容量大很多,所以如果能调整衬底夹具2的温度,则衬底1和液体6的温度调整成为可能。
[实施例2]
在实施例1中,通过用温度调整装置8调整了温度的温度调整水流向衬底夹具2的内部,进行衬底夹具2的温度调整、液体6的温度调整。
而在本实施例中,通过对衬底夹具2内部的水路的区域进行四分割,进行更高精度的温度调整。须指出的是,生成方法与实施例1同样,首先至少以二部分结构生成各部分,通过把它们粘贴在一起,生成一个衬底夹具2。此外,关于温度调整装置8以外的曝光装置的结构与实施例1为大致相同的结构,所以省略说明。
图3是说明实施例2的衬底夹具2的图。未图示衬底夹具2内部的详细的水路,但是如虚线所示,把衬底夹具2内部分割为第一象现~第四象现,关于各象现,通过使由温度调整装置8调整了温度的温度调整水流过,进行温度调整。须指出的是,温度调整与实施例1同样使用温度调整水等流体。
下面说明控制方法。
作为初始状态,使各象现调整为液体温度一定。然后,把曝光位置位于第一象现的曝光位置信息从控制部9发送给温度调整装置8时,温度调整装置8只独立改变流向第一象现的温度调整水的温度。它降低温度调整水的温度,从而使受到曝光能量而上升的衬底1和液体6的温度抵消。此外,可以用前馈进行该控制。即不是在当前曝光位置的温度调整,而是调整下一个进行曝光的位置的温度。
须指出的是,在图3中,分割为第一象现到第四象现,但是并不局限于此,分割数是任意的。
可以根据来自未图示的控制部9的曝光光照射信息(对于衬底1或液体6的累计曝光量等的信息),温度调整装置8降低温度调整水的温度,从而抵消曝光中上升的衬底1以及未图示的液体6的温度。
根据以上说明的形态,能分割进行衬底夹具2的温度调整,所以能以更高精度对衬底夹具2进行温度调整,也能以高精度进行衬底1和液体6的温度调整。
[实施例3]
在实施例1和实施例2中,通过调整衬底夹具2的温度,进行液体6的温度调整。
而在本实施例中,通过调整投影光学系统5的最靠近衬底一侧的光学元件5a的温度,进行光学元件5a和衬底1之间的液体6的温度调整。须指出的是,关于温度调整装置8以外的曝光装置的结构与实施例1为大致相同的结构,所以省略说明。
图4是说明实施例3的温度调整的结构的图。在图4中,5a是最终透镜,是投影光学系统5的最靠衬底1一侧的光学元件。5b是支撑部,支撑最终透镜5a。而且,支撑部5b在投影光学系统5中被保持。用虚线表示关于温度调整的部分,所以进行说明。8a是温度调整管,包围支撑部5b的周围。由温度调整装置8成为给定范围内的温度地进行了温度调整的温度调整水通过温度调整管8a,对支撑部5b、最终透镜5a进行温度调整。
此外,可以采用根据来自未图示的控制部9的曝光光照射信息(对于液体6和透镜5a的累计曝光量等的信息),温度调整装置8降低温度调整水的温度,从而抵消曝光中上升的最终透镜5a以及未图示的液体6的温度的方法。
须指出的是,在温度调整中,与实施例1或实施例同样使用温度调整水。
图4说明在支撑部5b的周围包围温度调整管8a的方法,但是并不局限于此,可以是在支撑部5b中设置成为温度调整用的流路的水路,把调整了温度的水流向其中的方法;或把调整了温度的气体例如氦、氮等喷向最终透镜5a的方法。这时,可以采用根据来自未图示的控制部9的曝光光照射信息,温度调整装置8降低气体的温度,从而抵消曝光中最终透镜5a以及未图示的液体6上升的温度的方法。
实施例1和实施例2说明进行衬底夹具2的温度调整,实施例3说明进行最终透镜5a和支撑部5b的温度调整,从而进行液体6的温度调整的方法,但是在本发明中,可以使用至少任意一个方法,调整液体6的温度,当然,可以用两者的方法调整液体6的温度,这时,液体6的更稳定并且更高精度的温度调整成为可能。这时,温度调整用的流路可以是公共的。
根据本实施例,通过使调整了温度的温度调整水流向支持部5b和最终透镜5a的周围,能调整最终透镜5a的温度。最终透镜5a的热容量比液体6的热容量大很多,所以如果能调整最终透镜5a的温度,就能调整液体6的温度。在曝光光照射的区域附近能调整温度,所以能以更高精度进行液体6的温度调整。
以上说明本发明的曝光装置的实施例,但是根据这些实施例,能调整吸收曝光能量而上升的液体温度,所以能把液体的折射率变化抑制在给定以内,能提供析像性高的曝光装置。
[实施例4]
下面,说明利用所述实施例中记载的曝光装置的器件制造方法的
实施例。
图6表示器件(IC或LSI等半导体芯片、液晶面板或CCD)的制造流程。在步骤1(电路设计)中,进行器件的电路设计。在步骤2(掩模的制作)中,制作形成了所设计的电路图案的掩模。在步骤3(晶片的制造)中,使用硅等材料作为衬底,制造晶片。步骤4(晶片工艺)称作前步骤,使用所述准备的掩模和晶片,通过光刻技术,在晶片上形成实际的电路。步骤5(组装)称作后步骤,是使用由步骤4形成的晶片,形成芯片的步骤,包含装配步骤(切片、接合)、封装步骤(封入芯片)等步骤。在步骤6(检查)中,进行步骤5中制作的半导体器件的动作确认测试、耐久性测试等检查。经过这样的步骤,半导体器件完成,出厂(步骤7)。
图7是晶片工艺的详细的程序流程图。在步骤11(氧化)中,使晶片的表面氧化。在步骤12中,在晶片表面形成绝缘膜。在步骤13(形成电极)中,在晶片上通过蒸镀形成电极。在步骤14(离子注入)中,对晶片注入离子。在步骤15(抗蚀剂处理)中,在晶片上涂敷感光剂。在步骤16(曝光)中,通过所述实施例中记载的曝光装置以掩模的电路图案的像把晶片曝光。在步骤17(显影)中,把曝光的晶片显影。在步骤18(蚀刻)中,切去显影的抗蚀剂以外的部分。在步骤19(抗蚀剂剥离)中,剥离蚀刻后不需要的抗蚀剂。通过重复进行这些步骤,在晶片上形成电路图案。
根据实施例的制造方法,能制造以往困难的高集成度的器件。
通过引用,把包括权利要求书、说明书、附图、摘要的2004年1月7日提出的以前的日本专利申请No.2004-002058并入这里。
由于在不脱离发明的精神或范围的前提下,能取得很多表面大不相同的本发明的实施例,所以本发明并不局限于这里表示和描述的特别的实施例,只局限于权利要求书中的定义。
Claims (13)
1.一种曝光装置,具有把标线片的图案投影到衬底上的投影光学系统,并经由填充在所述投影光学系统的配置在最靠近所述衬底一侧的光学元件和所述衬底之间的液体而把所述衬底曝光,其特征在于包括:
用来自光源的光照明所述标线片的照明光学系统;以及
通过调整所述光学元件的温度,调整所述液体的温度的温度调整装置。
2.根据权利要求1所述的曝光装置,其特征在于:
还具有支撑所述光学元件的支撑构件;
所述温度调整装置对所述支撑构件所具有的流路中供给调整了温度的流体。
3.根据权利要求2所述的曝光装置,其特征在于:
所述支撑构件所具有的流路设置在该支撑构件的周围和/或该支撑构件的内部。
4.根据权利要求1所述的曝光装置,其特征在于:
所述温度调整装置把调整了温度的流体喷射到所述光学元件。
5.根据权利要求2所述的曝光装置,其特征在于:
所述温度调整装置根据曝光位置信息,调整所述流体的温度。
6.根据权利要求2所述的曝光装置,其特征在于:
所述温度调整装置根据曝光光照射信息,调整所述流体的温度。
7.根据权利要求1所述的曝光装置,其特征在于还具有:
对保持所述衬底的保持构件所具有的流路中供给调整了温度的流体的温度调整装置。
8.一种曝光装置,具有把标线片的图案投影到衬底上的投影光学系统和保持所述衬底的保持构件,并经由填充在所述投影光学系统和所述衬底之间的液体而把所述衬底曝光,其特征在于包括:
用来自光源的光照明所述标线片的照明光学系统;以及
对所述保持构件所具有的流路中供给调整了温度的流体的温度调整装置。
9.根据权利要求8所述的曝光装置,其特征在于:
所述流路具有多个分割了的流路。
10.根据权利要求9所述的曝光装置,其特征在于:
所述温度调整装置独立调整流过所述多个分割了的流路各个的所述流体的温度。
11.根据权利要求9所述的曝光装置,其特征在于:
所述温度调整装置根据曝光位置信息,针对所述多个分割了的流路的每一个调整流过该流路的所述流体的温度。
12.根据权利要求2所述的曝光装置,其特征在于:
所述流体是水、氦、氮中的任意一种。
13.一种器件制造方法,包括以下的步骤:
使用权利要求1所述的曝光装置把衬底曝光的步骤;
把该曝光的衬底显影的步骤。
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- 2004-12-28 CN CNB2004100817502A patent/CN100507719C/zh not_active Expired - Fee Related
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2005
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Also Published As
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JP4429023B2 (ja) | 2010-03-10 |
US7528930B2 (en) | 2009-05-05 |
TW200527162A (en) | 2005-08-16 |
KR20070039894A (ko) | 2007-04-13 |
US20050146694A1 (en) | 2005-07-07 |
KR100727516B1 (ko) | 2007-06-14 |
JP2005197447A (ja) | 2005-07-21 |
CN100507719C (zh) | 2009-07-01 |
CN101408734A (zh) | 2009-04-15 |
KR20050072685A (ko) | 2005-07-12 |
TWI308673B (en) | 2009-04-11 |
KR100717689B1 (ko) | 2007-05-11 |
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