CN1507582A - 抗蚀剂剥离剂组合物 - Google Patents
抗蚀剂剥离剂组合物 Download PDFInfo
- Publication number
- CN1507582A CN1507582A CNA018232795A CN01823279A CN1507582A CN 1507582 A CN1507582 A CN 1507582A CN A018232795 A CNA018232795 A CN A018232795A CN 01823279 A CN01823279 A CN 01823279A CN 1507582 A CN1507582 A CN 1507582A
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- CN
- China
- Prior art keywords
- water
- corrosion inhibitor
- resist
- composition
- amino
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
DMSO | NMP | DMI | DMF | DMAc | |
偶极矩 | 4.3 | 4.09 | 4.05 | 3.86 | 3.79 |
沸点(℃) | 189 | 202 | 225 | 153 | 166 |
抗蚀剂剥离剂组合物的组成比(wt%) | |||||||||
a)有机胺化合物 | b)极性有机溶剂 | c)水 | d)有机酚化合物(含两个或多个OH基) | e)羟胺 | |||||
类型 | 含量 | 类型 | 含量 | 含量 | 类型 | 含量 | 含量 | ||
实施例 | 1 | MIPA | 15 | NMP | 45 | 32.0 | 结构式7 | 8 | - |
2 | MIPA | 17 | DMF | 50 | 29.5 | 结构式8 | 3.5 | - | |
3 | MIPA | 25 | HBM | 49.5 | 23.0 | 儿茶酚 | 2.5 | - | |
4 | MEA | 21 | NMP | 47 | 30.0 | 结构式9 | 2 | - | |
5 | MEA | 35 | DMI | 30 | 30.0 | 结构式10 | 5 | - | |
6 | MEA | 30 | NMP | 50 | 18.0 | 结构式11 | 2 | - | |
7 | MEA | 40 | NMP | 30 | 25.0 | 儿茶酚 | 5 | - | |
8 | MEA | 40 | HBM | 30 | 26.0 | 结构式12 | 4 | - | |
9 | MEA | 30 | HBM | 47 | 21.0 | 儿茶酚 | 2 | - | |
10 | MEA | 30 | HBM+MMP | 30+10 | 28.0 | 儿茶酚 | 2 | - | |
11 | MEA | 32 | HBM+MMP | 31+11 | 24.0 | 儿茶酚 | 2 | - | |
比例 | 1 | MEA | 10 | MFDG | 22 | 48 | - | - | 20 |
2 | MEA | 15 | EC | 30 | 30 | - | - | 25 | |
3 | MEA | 3 | DMAc | 97.0 | - | - | - | - | |
4 | MEA | 70 | MF | 20 | 8 | m-C | 2 | - | |
5 | MEA | 60 | BC | 35 | 5 | - | - | - | |
6 | MEA | 60 | BC | 30 | 10 | - | - | - | |
7 | MEA | 40 | EC | 30 | 26 | SA | 4 | - |
剥离剂组合物的温度 | 25℃ | |||||||||
样品(强烈焙烧温度) | a-14 | a-16 | a-18 | b-14 | b-16 | b-18 | c-14 | c-16 | c-18 | |
实施例 | 1 | ○ | ○ | ○ | ○ | ○ | △ | ○ | ○ | △ |
2 | ○ | ○ | △ | ○ | ○ | ○ | ○ | ○ | △ | |
3 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | |
4 | ○ | ○ | △ | ○ | △ | ○ | ○ | ○ | △ | |
5 | ○ | ○ | ○ | ○ | △ | △ | △ | ○ | ○ | |
6 | ○ | ○ | ○ | ○ | ○ | △ | ○ | △ | △ | |
7 | ○ | ○ | ○ | △ | ○ | ○ | △ | ○ | ○ | |
8 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | |
9 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | |
10 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | |
11 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | |
对比例 | 1 | △ | × | × | △ | × | × | △ | × | × |
2 | ○ | △ | × | ○ | △ | △ | ○ | △ | × | |
3 | △ | × | × | × | × | × | × | × | × | |
4 | △ | × | × | × | × | × | △ | × | × | |
5 | ○ | △ | × | × | × | × | × | × | × | |
6 | ○ | △ | × | ○ | × | × | △ | × | × | |
7 | ○ | × | × | △ | × | × | △ | △ | × |
剥离剂组合物的温度 | 50℃ | |||||||||
样品(强烈焙烧温度) | a-14 | a-16 | a-18 | b-14 | b-16 | b-18 | c-14 | c-16 | c-18 | |
实施例 | 1 | ○ | ○ | ○ | △ | ○ | ○ | △ | ○ | ○ |
2 | ○ | ○ | △ | ○ | ○ | ○ | ○ | ○ | ○ | |
3 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | |
4 | ○ | ○ | △ | ○ | ○ | ○ | ○ | ○ | ○ | |
5 | ○ | ○ | ○ | △ | △ | ○ | ○ | ○ | ○ | |
6 | ○ | ○ | ○ | ○ | ○ | △ | ○ | △ | △ | |
7 | ○ | ○ | ○ | △ | ○ | ○ | △ | △ | ○ | |
8 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | |
9 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ |
10 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | |
11 | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | ○ | |
对比例 | 1 | △ | × | × | △ | × | × | △ | × | × |
2 | ○ | △ | △ | ○ | ○ | △ | ○ | △ | △ | |
3 | △ | △ | × | △ | × | × | △ | × | × | |
4 | △ | × | × | × | × | × | △ | × | × | |
5 | ○ | ○ | △ | × | × | × | × | × | × | |
6 | ○ | △ | × | ○ | × | × | △ | × | × | |
7 | ○ | △ | △ | ○ | × | × | △ | × | × |
剥离剂组合物的温度 | 50℃ | |||
浸入时间 | 10分钟 | 2小时 | 24小时 | |
实施例 | 1 | ◎ | ○ | △ |
2 | ◎ | ○ | △ | |
3 | ◎ | ◎ | ◎ | |
4 | ◎ | ○ | △ | |
5 | ◎ | ○ | △ | |
6 | ◎ | ◎ | ○ | |
7 | ◎ | ◎ | ○ | |
8 | ◎ | ◎ | ◎ | |
9 | ◎ | ◎ | ○ | |
10 | ◎ | ◎ | ◎ | |
11 | ◎ | ◎ | ◎ | |
对比例 | 1 | △ | × | × |
2 | ○ | △ | △ | |
3 | △ | × | × | |
4 | △ | × | × | |
5 | △ | × | × | |
6 | ○ | △ | × | |
7 | △ | × | × |
剥离剂组合物的温度 | 50℃ | ||||
浸入时间 | 0小时 | 12小时 | 24小时 | 48小时 | |
实施例 | 1 | 1 | 3 | 19 | 35 |
2 | 1 | 3 | 17 | 36 | |
3 | 1 | 2 | 13 | 29 | |
4 | 2 | 3 | 19 | 37 | |
5 | 1 | 4 | 21 | 41 | |
6 | 1 | 3 | 16 | 32 | |
7 | 2 | 3 | 15 | 34 | |
8 | 1 | 5 | 14 | 31 | |
9 | 1 | 1 | 15 | 30 | |
10 | 1 | 3 | 13 | 30 | |
11 | 1 | 2 | 12 | 29 | |
对比例 | 1 | 1 | 35 | 69 | 145 |
2 | 1 | 19 | 42 | 210 | |
3 | 2 | 24 | 39 | 109 | |
4 | 1 | 25 | 45 | 167 | |
5 | 1 | 42 | 63 | 231 | |
6 | 2 | 28 | 45 | 114 | |
7 | 2 | 31 | 48 | 121 |
处理的片数 | 样品b-14 | 样品c-14 | ||
实施例10 | 对比例3 | 实施例10 | 对比例3 | |
1 | 0 | 0 | 0 | 0 |
100 | 2 | 14 | 1 | 18 |
200 | 3 | 37 | 3 | 40 |
300 | 6 | 71 | 6 | 69 |
400 | 9 | 138 | 10 | 140 |
Claims (5)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR2001/000837 WO2002095500A1 (en) | 2001-05-21 | 2001-05-21 | Resist remover composition |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1507582A true CN1507582A (zh) | 2004-06-23 |
CN1238770C CN1238770C (zh) | 2006-01-25 |
Family
ID=19198381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN01823279.5A Expired - Fee Related CN1238770C (zh) | 2001-05-21 | 2001-05-21 | 抗蚀剂剥离剂组合物 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6861210B2 (zh) |
CN (1) | CN1238770C (zh) |
WO (1) | WO2002095500A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7015183B2 (en) * | 2001-05-21 | 2006-03-21 | Dongjin Semichem Co., Ltd. | Resist remover composition |
US8263539B2 (en) * | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
WO2010090146A1 (ja) * | 2009-02-03 | 2010-08-12 | 出光興産株式会社 | レジスト剥離剤組成物及びそれを用いたレジスト剥離方法 |
MY185453A (en) * | 2009-07-30 | 2021-05-19 | Basf Se | Post ion implant stripper for advanced semiconductor application |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4617251A (en) | 1985-04-11 | 1986-10-14 | Olin Hunt Specialty Products, Inc. | Stripping composition and method of using the same |
US4770713A (en) | 1986-12-10 | 1988-09-13 | Advanced Chemical Technologies, Inc. | Stripping compositions containing an alkylamide and an alkanolamine and use thereof |
JPS63208043A (ja) | 1987-02-25 | 1988-08-29 | Kanto Kagaku Kk | ポジ型フオトレジスト用水溶性剥離液 |
JPS63231343A (ja) | 1987-03-20 | 1988-09-27 | Hitachi Ltd | レジストパタ−ンの剥離液 |
JP2578821B2 (ja) | 1987-08-10 | 1997-02-05 | 東京応化工業株式会社 | ポジ型ホトレジスト用剥離液 |
DE3828513A1 (de) | 1988-08-23 | 1990-03-01 | Merck Patent Gmbh | Abloesemittel fuer fotoresists |
JP2527268B2 (ja) | 1990-09-17 | 1996-08-21 | 東京応化工業株式会社 | レジスト用剥離剤組成物 |
US5279771A (en) | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
JPH04350660A (ja) | 1991-05-28 | 1992-12-04 | Texas Instr Japan Ltd | 半導体装置製造用ポジ型フォトレジスト用剥離液および半導体装置の製造方法 |
JP2980772B2 (ja) | 1992-04-02 | 1999-11-22 | ナガセ電子化学株式会社 | 剥離剤組成物 |
EP0578507B1 (en) | 1992-07-09 | 2005-09-28 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
JPH06184595A (ja) | 1992-12-18 | 1994-07-05 | Nitto Chem Ind Co Ltd | レジスト剥離工程用洗浄剤 |
JPH06249355A (ja) | 1993-02-25 | 1994-09-06 | Toto Ltd | 流体弁の駆動装置 |
JP3619261B2 (ja) | 1993-06-15 | 2005-02-09 | 三菱レイヨン株式会社 | 溶剤組成物 |
US5612303B1 (en) * | 1993-06-15 | 2000-07-18 | Nitto Chemical Industry Co Ltd | Solvent composition |
JPH085664B2 (ja) | 1994-02-07 | 1996-01-24 | 住友特殊金属株式会社 | 希土類・鉄・ボロン系正方晶化合物 |
JPH08123043A (ja) | 1994-10-27 | 1996-05-17 | Sumitomo Chem Co Ltd | フォトレジスト用剥離液 |
JPH08262746A (ja) | 1995-03-28 | 1996-10-11 | Mitsubishi Gas Chem Co Inc | フォトレジスト剥離剤組成物および剥離方法 |
JP2911792B2 (ja) | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
JP3929518B2 (ja) | 1995-11-30 | 2007-06-13 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
-
2001
- 2001-05-21 CN CN01823279.5A patent/CN1238770C/zh not_active Expired - Fee Related
- 2001-05-21 US US10/478,388 patent/US6861210B2/en not_active Expired - Lifetime
- 2001-05-21 WO PCT/KR2001/000837 patent/WO2002095500A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2002095500A1 (en) | 2002-11-28 |
US20040152022A1 (en) | 2004-08-05 |
CN1238770C (zh) | 2006-01-25 |
US6861210B2 (en) | 2005-03-01 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: CO., LTD. DONG JIN SHI-MEI KEN Free format text: FORMER NAME: DONG JIN SE MI-KAN CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: West end of Inchon City, Republic of Korea Patentee after: DONGJIN SEMICHEM Co.,Ltd. Address before: West end of Inchon City, Republic of Korea Patentee before: DONGJIN SEMICHEM Co.,Ltd. |
|
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Beijing world east Macon Technology Co.,Ltd. Assignor: DONGJIN SEMICHEM Co.,Ltd. Contract fulfillment period: 2009.11.20 to 2024.11.19 Contract record no.: 2009990001324 Denomination of invention: Resist remover compsn. Granted publication date: 20060125 License type: General permission Record date: 20091216 |
|
LIC | Patent licence contract for exploitation submitted for record |
Free format text: COMMON LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.11.20 TO 2024.11.19; CHANGE OF CONTRACT Name of requester: BEIJING DONGJIN SEMICHEM TECHNOLOGY CO., LTD. Effective date: 20091216 |
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EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Beijing world east Macon Technology Co.,Ltd. Assignor: DONGJIN SEMICHEM Co.,Ltd. Contract record no.: 2009990001324 Date of cancellation: 20100304 |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060125 Termination date: 20110521 |