CN1366343A - 图像拾取设备 - Google Patents
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Abstract
一种图象拾取设备包括:象素区,包含多个象素;和基底。该象素区被结合在该基底上,其中该象素区的中心与该基底的中心基本上彼此吻合。这个装置的尺寸可以减小。
Description
发明背景
发明领域
本发明涉及一种用于拾取目标图象的图象拾取设备。
相关背景技术
图1所示为传统固态图象拾取元件的配置。象素1a具有光电转换部分,如光电二极管。这些象素是二维排列的,从而形成用于拾取目标图象的象素区2a。
外围电路3a包括从象素中读出信号的垂直及水平移位寄存器和用于供电的电源电路。象素区2a和外围电路3a集成在一个半导体基底4a上。
在图1所示的半导体基底上的象素区和外围电路的配置中,在固态图象拾取元件通过CMP(化学机械抛光)等整平形成的情况下,固态图象拾取元件的输出会受到遮蔽(shading)的影响。
另外,该装置由于固态图象拾取元件和透镜等之间的位置关系而难以减小尺寸。
发明概述
本发明的一个目的是减小图象拾取设备的尺寸。
为了实现上述目的,根据本发明的一个方面提供了一种图象拾取设备,它包括:
象素区,包含多个象素;以及
基底,该象素区结合在该基底上,
其中象素区的中心与基底的中心基本上彼此吻合。
根据本发明的另一个方面提供了一种图象拾取设备,它包括:
基底,包含多个象素的象素区置于该基底上;
透镜,用于使光在象素区上形成图象,该透镜并未与该象素区结合在一起;以及
至少在象素区两端彼此相对的两侧上配置的处理电路,用于执行预定的处理,
其中基底和透镜被结合在一起。
根据本发明的又一个方面提供了一种图象拾取设备,包括:
基底,包含多个象素的象素区置于该基底上;
透镜,用于在象素区上使光形成图象,该透镜并未与该象素区结合在一起;以及
至少在象素区两端彼此相对的两侧中的一侧上配置的处理电路,用于执行预定的处理,以及
虚拟(dummy)电路或衬垫(pad),置于这两侧中的另一侧上,
其中基底和透镜结合在一起。
结合附图,通过下面的描述,本发明的上述及其它目的、特征和优点将会显而易见。
附图简述
图1所示为传统固态图象拾取元件的配置的平面图;
图2所示为根据本发明第一实施例的固态图象拾取元件的平面示意图;
图3A和3B为分别表示图2中的固态图象拾取元件的平面示意图和截面图;
图4所示为图2中的固态图象拾取元件的透视示意图;
图5所示为图2中的象素区周围的放大图;
图6所示为图5中的象素的等效电路图;
图7A和7B分别表示作为与本发明第一实施例比较的例子的固态图象拾取元件的平面示意图和截面图;
图8所示为在固态图象拾取元件中使用的光电二极管周围的截面示意图;
图9A和9B表示在CMP之前和之后的图8所示中间介质层的状态的截面图;
图10A和10B表示图2、7A和7B中的固态图象拾取元件的象素区和外围电路的厚度图;
图11表示当图2、7A和73中的固态图象拾取元件被驱动时的每个象素的输出;
图12所示为根据本发明第一实施例的另一个固态图象拾取元件的平面示意图;
图13所示为根据本发明第一实施例的又一个固态图象抬取元件的平面示意图;
图14表示图3B所示图象拾取单元的细节的截面图;
图15A和15B所示为根据本发明第二实施例的固态图象拾取元件的平面图;以及
图16所示为根据本发明第三实施例的固态图象拾取系统的框图。
优选实施例的详细描述
图2所示为根据本发明第一实施例的固态图象拾取元件的平面示意图。图2所示为一种所谓四个透镜的固态图象拾取元件。在图2中,每个象素101具有一个光电二极管。每个象素组102a-102d均以象素101的二维阵列来形成。象素区103包括象素组102a-102d。水平移位寄存器(HSR)203和垂直移位寄存器(VSR)204从象素组102a-102d的象素101中读出其输出。电源电路105被用作固态图象拾取元件的驱动源,它置于象素区103的周围。时钟电路106把时钟信号提供给水平和垂直移位寄存器203和204。A/D转换器(ADC)107把来自每个象素101的信号从模拟信号转换为数字信号。模拟电路108包括用于校正信号的自动增益控制电路以及校正的二次取样电路。这些单元均集成在半导体基底104上。
在第一实施例中,如图2所示,具有多个象素组102a-102d的象素区103置于基底104的中心,并且电源电路105、时钟电路106、A/D转换器107和模拟电路108围绕着象素区103配置。
图3A所示为包括图2的固态图象拾取元件和诸如透镜这样的其它部件的图象拾取单元的平面示意图。图3B是沿着图3A中的线3B-3B所取的截面图。图4是图2中的固态图象拾取元件的透视示意图。
在图3A和3B中,图象拾取透镜301允许入射光进入象素组102a-102d的象素101中。支撑部件305置于基底104的外围部分,以用于支撑图象拾取透镜301。半导体基底104安装在安装板306上。外围电路303对应于图2中的水平移位寄存器203,垂直移位寄存器204、放大器201、电源电路105、时钟电路106、A/D转换器107和模拟电路108。R(红色)滤色器置于象素组102a的前面。G(绿色)滤色器置于象素组102b和102c的前面。B(兰色)滤色器置于象素组102d的前面。
如图3A和3B所示,在第一实施例的图象拾取单元中,半导体基底104和象素区103的中心彼此吻合。图象拾取透镜与半导体基底和安装板结合在一起。
图5所示为图2中的象素区103周围的放大图。在图5中,垂直输出线705用于读取象素组102a-102d的输出。放大器201连接垂直输出线705,以用于放大从象素组102a-102d读出的输出。
图6所示为图5中的象素101的等效电路图。在图6中,光电二极管701光电转换入射光。转接开关702把电信号传送到浮动传播(FD)区。复位开关703清除FD区和光电二极管701中的电荷。源极跟随器放大器704根据传送的电信号获得放大的信号。恒流电源706用于把放大信号读出到垂直输出线705。
下面将简要解释图2-6中的操作。在固态图象拾取设备由电源电路105打开的同时,来自要被拾取的目标的光由图象拾取透镜301收集并进入象素组102a-102d的象素101。在每个象素101中,光电二极管701把入射光转换为电信号。
根据时钟电路106的时钟信号,垂直移位寄存器204输出用于接通转接开关702的信号。随后,转接开关702被接通,以用于把光电二极管701光电转换的电信号传送到浮动传播(FD)区。该传送的电信号使源极跟随器放大器704的栅极导通,并且放大的信号通过源极跟随器放大器704和恒流电源706读出到垂直输出线705。
随后,根据时钟电路106的时钟信号,水平移位寄存器203按顺序把读出到各个垂直输出线705的放大信号输入到放大器201中。放大器201放大每个输入的放大信号并把其输出至模拟电路108。模拟电路108对放大的信号执行彩色处理,白色平衡处理、γ处理和遮蔽处理,并把处理的信号输出到A/D转换器107。A/D转换器107把该输出信号从模拟信号转换为数字信号。该数字信号被从外部读取,或者保存在存储器(未示出)中。
图7A所示为作为用来解释减小上述图象拾取单元的尺寸的优点的比较实例的图象拾取单元的平面示意图。图7B是沿着图7A中的线7B-7B所取的截面图。图7A和7B分别对应于图4A和4B。
在用于比较的例子中,如图7A和7B所示,外围电路303在围绕着象素组102a-102d的两个相邻侧边上以L形放置。如果外围电路303以L形放置,并且象素区和图象拾取透镜的中心彼此吻合,则在象素区和支撑部件之间会需要不必要的空间,从而使图象拾取单元非常大。换言之,本实施例的图象拾取单元可实现比图7A和7B所示的图象拾取单元要小的尺寸。
应当指出,尤其是在CMP作为固态图象拾取元件的制造步骤之一而被采用的情况下,可获得上述固态图象拾取元件的电路配置的优点的技术优势。但是,本发明并不限于使用CMP。为了满足固态图象拾取元件的高分辨率和高灵敏度这两个要求,光电二极管区可通过制造微布线图案来保证,并且光会聚比可通过把微透镜置于象素上而增加。
对于通过制造微布线图案的高集成度来说,具有多层布线结构的固态图象拾取元件是通过0.35μm或更小的设计规则来特别制造的。为了使布线层之间的介电中间层平整,用CMP对该元件的介质中间层进行抛光。
图8是示意剖视图,显示了用作该固态图象拾取元件中采用的一种光电转换元件的一个光电二极管的附近区域。如图8所示,由绝缘层1202、布线层1204和介质间层1203制成的多层布线结构在光电二极管1201上形成,该光电二极管1201具有在半导体基底104中形成的P和N层。
具体来说,布线层1204在绝缘层1202上形成。介质间层1203在布线层1204上形成,目的是降低由该布线层形成的台阶。介质间层1203通过CMP抛光并被整平。布线层(未示出)等在整平的介质间层1203上形成。钝化层在顶层上形成。
利用这种方式,布线层1204的台阶的影响被降低,从而可防止图案缺陷,如布线层(未示出)断开,或者是由光电二极管1201上的层1202-1204之间的折射率的差值引起的光的多重干扰。但是,根据布线层1204中的布线密度的不同,介质间层1203会受到其表面上台阶的不一致性的损害。
图9A所示为一种状态的截面图,在该状态下,基于SiO的材料作为介质间层1203涂覆于图8所示的布线层1204上,但它还未通过CMP进行抛光。图9B所示为在其中介质间层1203从图9A的状态经过CMP抛光的状态的截面图。如图9A和9B所示,布线层1204包括高布线密度区(图9A和9B的右边)以及低布线密度区(图9A和9B的左边)。介质间层1203在低布线密度区进行了令人满意的抛光,但在高布线密度区的抛光不充分。
如果布线层或钝化层(未示出)以这种状态形成,则由多个层构成的层的层厚会有所不同。根据该多个层构成的层的光谱灵敏度特性,波动将会产生。结果,光电二极管的灵敏度可能会由于微小的波长差而发生极大的变化。该多个层构成的层的厚度变化将会随着层厚的不同而改变光谱灵敏度特性,对于相同的波长来说,由此将产生灵敏度变化。
如果多层布线结构的介质间层的厚度改变,则布线层之间的电容也会变化,从而会改变电路特性,如增益。这些变化并不是所希望的,因为它们会引起象素间的灵敏度差异,即使是对于均匀的光来说,并且它们会在排列了多个光电二极管1201的固态图象拾取元件的输出中产生暗影。
通过清晰地把高和低布线密度区彼此分开并降低通过CMP整平的介质间层的台阶,可以防止由多个层构成的层的厚度变化。需要指出,象素区具有低至大约30%的布线密度,而外围电路,如用于处理从象素区读出的信号的处理电路则具有高达大约70%的布线密度。
图10A是表示图2中的固态图象抬取元件的象素区103和外围电路303的层厚的图。图10B是表示图7A和7B中的固态图象拾取元件的象素区103和外围电路303的层厚的图。
如图10A所示,图2的固态图象拾取元件具有两个高布线密度区。这些区域中的层厚较大,并且它们之间的区域的层厚较小。相反,如图10B所示,图7A和7B的固态图象拾取元件具有一个高布线密度区。除了该区域之外的其它区域的层厚较小。从图10A和10B可以看出,层厚是不同的。层厚度差使其难以获得均匀的灵敏度。因此,与图7A和7B所示的固态图象拾取元件相比,图2所示的固态图象拾取元件的灵敏度几乎不变。
图11所示为当图2、7A和7B的固态图象拾取元件被驱动时每个象素101的输出的图。如图11所示,与图7A和7B所示的固态图象拾取元件相比,图2所示的固态图象拾取元件的输出几乎不变。如图11所示,如果该多层构成的层的厚度变化很大,则在象素区的水平或垂直方向上的输出信号中会出现暗影,即使是在使用强度均匀的入射光时。
在本发明的第一实施例中,外围区域303在象素区103的所有侧边上形成,但也可在象素区103两端彼此相对的两侧上形成。举例来说,如图12所示,电源电路105、时钟电路106、A/D转换器107和模拟电路108可靠近相应的水平移位寄存器203来配置。另外,如图13所示,电源电路105、时钟电路106、A/D转换器107和模拟电路108可靠近相应的垂直移位寄存器204来配置。
在上面的描述中,所谓的象素区103中的每个象素101使用一个CMOS传感器。但是,象素101也可使用任意的传感器,如AMI(放大MOS成象器)、CMD(电荷调制器件)或CCD(电荷耦合器件)。
在上述配置中,固态图象拾取元件和安装板分开放置。另外,固态图象拾取元件也可起到安装板的作用,而不必采用与固态图象拾取元件分开的安装板。
参考图14将详细描述图3B中的配置。
固态图象拾取元件(CMOS传感器)10是通过把象素区、外围电路等结合在一起而形成的。光屏蔽部件13、滤色器11、红外阻断(cut)滤器14等被安装在玻璃板15上。密封树脂16填充固态图象拾取元件和玻璃板之间的空隙。
钟形金块(gold bump)17支撑玻璃板15并具有导电性。导电粘合剂18连接钟形金块和玻璃板并具有导电性。导线(FPC)19建立外部电连接。透镜固定粘合剂20固定透镜。图象拾取透镜21在固态图象拾取元件上使光形成图象。孔隙22和钝化玻璃23置于图象拾取透镜21上。
在上面的配置中,固态图象拾取元件起到了安装板的作用,这样就不必在固态图象拾取元件之外再使用安装板。固态图象拾取元件是由能够使该元件也起到安装板作用的材料制成的。
这种配置可进一步降低成本和尺寸。
图15A和15B是根据本发明第二实施例的固态图象拾取设备的平面图,它对应于图2。在图15A和15B中,虚拟电路804具有与外围电路303相同的布线密度。在图15A和15B中,与图2相同的参考数字表示相同的部分。
当外围电路303根据设计仅仅可置于象素区103的三个侧边上时,或者可置于象素区103的所有侧边上但仅仅置于所有侧边之一的一半侧边上时,图15A和15B中所示的固态图象拾取设备可获得与图2所示的固态图象拾取设备相同的灵敏度。应当指出,也可用一个衬垫来代替虚拟电路804。
图16所示为使用第一或第二实施例中描述的图象拾取单元的图象拾取系统的框图。在图16中,图象拾取单元1是在第一或第二实施例中描述的单元并且捕获目标图象作为图象信号。信号处理单元2对从图象拾取单元输出的图象数据执行各种校正处理,并压缩数据,并且合成来自各个象素组的图象数据。定时发生单元3为图象拾取单元1和信号处理单元2产生各种定时信号。系统控制和操作单元4控制各种算术运算和整个图象拾取系统。存储单元5临时存储图象数据。记录介质控制I/F单元6在/从记录介质中记录/读出数据。诸如半导体存储器的可拆卸记录介质7用来记录/读出图象数据。外部接口(I/F)单元8与外部计算机等通信。
第一到第三实施例是其中有多个象素组、目标图象被分成多个图象、并且光入射到相应的象素组上的情况为例子的。这种配置可缩短焦距,这特别有利于减小尺寸。但是,也可只用一个象素组来代替多个象素组并且在诸如该象素组上的拜尔布局中放置滤色器。
正如上面所描述的,图象拾取单元的尺寸和轮廓可被减小。另外,也可获得高质量的图象。
在不背离本发明宗旨和范围的情况下,可以构建本发明的许多非常不同的实施例。应当理解,本发明并不限于说明书中所描述的特定实施例,而是由所附的权利要求来定义。
Claims (23)
1.一种图象拾取设备,包括:
象素区,它包含多个象素;以及
基底,所述象素区被结合在该基底上,
其中所述象素区的中心与所述基底的中心基本上彼此吻合。
2.根据权利要求1的设备,其中所述基底包括用于执行预定处理的处理电路,它被结合在所述基底上的所述象素区两端彼此相对的至少两侧上。
3.根据权利要求1的设备,其中所述基底包括用于执行预定处理的处理电路,它被结合在所述基底上的所述象素区两端彼此相对的两侧中的至少一侧上,并且虚拟电路或衬垫置于另一侧上。
4.根据权利要求1的设备,其中所述基底包括通过化学机械抛光整平的区域。
5.根据权利要求1的设备,其中所述象素区通过排列多个象素组来形成,每个象素组具有一个二维象素阵列,并且
所述装置还包括对应于各个象素组配置的透镜,以使光在象素组上形成图象。
6.根据权利要求5的设备,还包括针对各个象素组配置的滤色器,
其中所述滤色器未被结合在所述基底上。
7.一种图象拾取系统,包括:
如权利要求1所定义的图象拾取设备;
信号处理电路,配置用于处理来自所述图象拾取设备的信号;以及
存储器,配置用于存储来自所述信号处理电路的信号。
8.一种图象拾取设备,包括:
基底,在其上设置有包含多个象素的一个象素区;
一个透镜,它被适当地设置以使光在所述象素区上成象,所述透镜并未与所述象素区结合在一起;以及
至少在象素区彼此相对的两侧上设置的处理电路,用于执行预定的处理,
其中所述基底和所述透镜被结合在一起。
9.根据权利要求8的设备,其中所述透镜至少在所述象素区周围彼此相对的两侧上被固定。
10.根据权利要求8的设备,其中上述象素区置于一块玻璃上,并且所述透镜固定在所述玻璃上。
11.根据权利要求8的设备,其中所述象素区在不同于所述基底的半导体基底上形成,并且所述半导体基底安装在所述基底上。
12.根据权利要求8的设备,其中所述象素区被结合在所述基底上。
13.根据权利要求8的设备,所述处理电路包括用于按顺序扫描象素的扫描电路,所述扫描电路至少在所述象素区两端彼此相对的两侧上配置。
14.根据权利要求8的设备,其中所述处理电路包括A/D转换电路、提供时钟信号的时钟电路、电源电路以及模拟电路之一,所述模拟电路至少包括自动增益控制器和校正的二次取样电路之一,它们被置于所述象素区两端彼此相对的两侧中的至少一侧上,并且A/D转换电路、时钟电路和模拟电路之一并未放置于所述一侧上,而是置于这两侧中的另一侧上。
15.一种图象拾取系统,包括:
如权利要求8所限定的图象拾取设备;
一个信号处理电路,它被适当地设置以处理来自所述图象拾取设备的信号;以及
一个存储器,它被适当地设置以存储来自所述信号处理电路的信号。
16.一种图象拾取设备,包括:
基底,在其上设置有包含多个象素的象素区;
一个透镜,它被适当地设置以使光在所述象素区上成象,所述透镜并未与所述象素区结合在一起;以及
至少在象素区两端彼此相对的两侧中的一侧上设置的处理电路,用于执行预定的处理,以及
一个虚拟电路或衬垫,它被置于该两侧中的另一侧上,
其中所述基底和所述透镜被结合在一起。
17.根据权利要求16的设备,其中所述透镜至少在所述象素区周围彼此相对的两侧上被固定。
18.根据权利要求16的设备,其中上述象素区置于一块玻璃上,并且所述透镜固定在所述玻璃上。
19.根据权利要求16的设备,其中所述象素区在不同于所述基底的半导体基底上形成,并且该半导体基底安装在所述基底上。
20.根据权利要求16的设备,其中所述象素区被结合在所述基底上。
21.根据权利要求16的设备,其中所述处理电路包括用于按顺序扫描象素的扫描电路。
22.根据权利要求16的设备,其中所述处理电路包括A/D转换电路、提供时钟信号的时钟电路、电源电路以及模拟电路之一,所述模拟电路至少包括自动增益控制器和校正的二次取样电路之一。
23.一种图象拾取系统,包括:
如权利要求16所定义的图象拾取设备;
信号处理电路,配置用于处理来自所述图象拾取设备的信号;以及
存储器,配置用于存储来自所述信号处理电路的信号。
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- 2001-12-18 CN CN01145778A patent/CN1366343A/zh active Pending
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CN107948552A (zh) * | 2017-12-28 | 2018-04-20 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
CN107948552B (zh) * | 2017-12-28 | 2020-03-31 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
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US20020113888A1 (en) | 2002-08-22 |
EP1215729A2 (en) | 2002-06-19 |
KR20020048905A (ko) | 2002-06-24 |
EP1215729A3 (en) | 2004-01-14 |
JP2002252338A (ja) | 2002-09-06 |
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