CN1326591A - 多晶硅电阻器及其制造方法 - Google Patents
多晶硅电阻器及其制造方法 Download PDFInfo
- Publication number
- CN1326591A CN1326591A CN99813247A CN99813247A CN1326591A CN 1326591 A CN1326591 A CN 1326591A CN 99813247 A CN99813247 A CN 99813247A CN 99813247 A CN99813247 A CN 99813247A CN 1326591 A CN1326591 A CN 1326591A
- Authority
- CN
- China
- Prior art keywords
- resistor
- layer
- polysilicon
- oxide
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
Abstract
Description
样品编号 | 分析方法 | Ti浓度(原子/cm2) | W浓度(原子/cm2) |
1 | RBS | 1×1013 | 6×1012 |
2 | RBS | 2×1013 | 1×1013 |
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9803883A SE513116C2 (sv) | 1998-11-13 | 1998-11-13 | Polykiselresistor och sätt att framställa sådan |
SE98038839 | 1998-11-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1326591A true CN1326591A (zh) | 2001-12-12 |
CN1156004C CN1156004C (zh) | 2004-06-30 |
Family
ID=20413276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB998132470A Expired - Fee Related CN1156004C (zh) | 1998-11-13 | 1999-11-15 | 多晶硅电阻器及其制造方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6400252B1 (zh) |
EP (1) | EP1142016A1 (zh) |
JP (1) | JP4731690B2 (zh) |
KR (1) | KR100722310B1 (zh) |
CN (1) | CN1156004C (zh) |
AU (1) | AU1901600A (zh) |
CA (1) | CA2350656A1 (zh) |
HK (1) | HK1042590A1 (zh) |
SE (1) | SE513116C2 (zh) |
WO (1) | WO2000030176A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100399506C (zh) * | 2003-01-31 | 2008-07-02 | 快捷半导体有限公司 | 具有低标准偏差的高值分裂多晶p电阻器 |
CN100409415C (zh) * | 2005-12-06 | 2008-08-06 | 上海华虹Nec电子有限公司 | 一种在集成电路中使用α多晶硅的方法 |
CN106684046A (zh) * | 2015-11-11 | 2017-05-17 | 无锡华润上华半导体有限公司 | 一种降低多晶高阻的氢化作用的结构、方法及半导体器件 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7439146B1 (en) * | 2000-08-30 | 2008-10-21 | Agere Systems Inc. | Field plated resistor with enhanced routing area thereover |
KR100767540B1 (ko) * | 2001-04-13 | 2007-10-17 | 후지 덴키 홀딩스 가부시끼가이샤 | 반도체 장치 |
JP2004071927A (ja) * | 2002-08-08 | 2004-03-04 | Renesas Technology Corp | 半導体装置 |
US20040070048A1 (en) * | 2002-10-15 | 2004-04-15 | Kwok Siang Ping | Providing high precision resistance in an integrated circuit using a thin film resistor of controlled dimension |
DE10317466A1 (de) * | 2003-04-16 | 2004-12-09 | Robert Bosch Gmbh | Elektromotor |
US7112535B2 (en) * | 2003-09-30 | 2006-09-26 | International Business Machines Corporation | Precision polysilicon resistor process |
KR100587669B1 (ko) * | 2003-10-29 | 2006-06-08 | 삼성전자주식회사 | 반도체 장치에서의 저항 소자 형성방법. |
US20070096260A1 (en) * | 2005-10-28 | 2007-05-03 | International Business Machines Corporation | Reduced parasitic and high value resistor and method of manufacture |
US7642892B1 (en) | 2006-03-10 | 2010-01-05 | Integrated Device Technology, Inc. | Negative voltage coefficient resistor and method of manufacture |
US7855422B2 (en) * | 2006-05-31 | 2010-12-21 | Alpha & Omega Semiconductor, Ltd. | Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process |
US7691717B2 (en) | 2006-07-19 | 2010-04-06 | International Business Machines Corporation | Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof |
DE102008035808B4 (de) * | 2008-07-31 | 2015-06-03 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Halbleiterbauelement mit einem Silizium/Germanium-Widerstand |
US8054156B2 (en) * | 2008-08-26 | 2011-11-08 | Atmel Corporation | Low variation resistor |
US8395435B2 (en) * | 2009-07-30 | 2013-03-12 | Qualcomm, Incorporated | Switches with bias resistors for even voltage distribution |
JP6556556B2 (ja) | 2015-08-20 | 2019-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6939497B2 (ja) * | 2017-12-13 | 2021-09-22 | 富士電機株式会社 | 抵抗素子 |
US10211830B2 (en) | 2017-04-28 | 2019-02-19 | Qualcomm Incorporated | Shunt termination path |
US10910714B2 (en) | 2017-09-11 | 2021-02-02 | Qualcomm Incorporated | Configurable power combiner and splitter |
JP7275884B2 (ja) | 2019-06-13 | 2023-05-18 | 富士電機株式会社 | 抵抗素子及びその製造方法 |
JPWO2022239719A1 (zh) * | 2021-05-10 | 2022-11-17 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1136773A (en) * | 1978-08-14 | 1982-11-30 | Norikazu Ohuchi | Semiconductor device |
US4758814A (en) * | 1985-12-02 | 1988-07-19 | Motorola, Inc. | Structure and method for wire lead attachment to a high temperature ceramic sensor |
US5241206A (en) * | 1991-07-03 | 1993-08-31 | Micron Technology, Inc. | Self-aligned vertical intrinsic resistance |
JPH0677402A (ja) * | 1992-07-02 | 1994-03-18 | Natl Semiconductor Corp <Ns> | 半導体デバイス用誘電体構造及びその製造方法 |
SE504969C2 (sv) * | 1995-09-14 | 1997-06-02 | Ericsson Telefon Ab L M | Polykiselresistor och förfarande för framställning av en sådan |
SE511816C3 (sv) * | 1996-06-17 | 2000-01-24 | Ericsson Telefon Ab L M | Resistor innefattande en resistorkropp av polykristallint kisel samt foerfarande foer framstaellning av en saadan |
-
1998
- 1998-11-13 SE SE9803883A patent/SE513116C2/sv not_active IP Right Cessation
-
1999
- 1999-11-15 WO PCT/SE1999/002092 patent/WO2000030176A1/en not_active Application Discontinuation
- 1999-11-15 KR KR1020017005458A patent/KR100722310B1/ko not_active IP Right Cessation
- 1999-11-15 EP EP99962609A patent/EP1142016A1/en not_active Withdrawn
- 1999-11-15 CA CA002350656A patent/CA2350656A1/en not_active Abandoned
- 1999-11-15 AU AU19016/00A patent/AU1901600A/en not_active Abandoned
- 1999-11-15 CN CNB998132470A patent/CN1156004C/zh not_active Expired - Fee Related
- 1999-11-15 JP JP2000583087A patent/JP4731690B2/ja not_active Expired - Fee Related
-
2000
- 2000-02-14 US US09/503,484 patent/US6400252B1/en not_active Expired - Lifetime
-
2002
- 2002-05-31 HK HK02104181.9A patent/HK1042590A1/zh unknown
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100399506C (zh) * | 2003-01-31 | 2008-07-02 | 快捷半导体有限公司 | 具有低标准偏差的高值分裂多晶p电阻器 |
CN100409415C (zh) * | 2005-12-06 | 2008-08-06 | 上海华虹Nec电子有限公司 | 一种在集成电路中使用α多晶硅的方法 |
CN106684046A (zh) * | 2015-11-11 | 2017-05-17 | 无锡华润上华半导体有限公司 | 一种降低多晶高阻的氢化作用的结构、方法及半导体器件 |
CN106684046B (zh) * | 2015-11-11 | 2019-03-08 | 无锡华润上华科技有限公司 | 一种降低多晶高阻的氢化作用的结构、方法及半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
JP4731690B2 (ja) | 2011-07-27 |
KR20010075671A (ko) | 2001-08-09 |
SE513116C2 (sv) | 2000-07-10 |
AU1901600A (en) | 2000-06-05 |
HK1042590A1 (zh) | 2002-08-16 |
CA2350656A1 (en) | 2000-05-25 |
WO2000030176A1 (en) | 2000-05-25 |
US6400252B1 (en) | 2002-06-04 |
JP2002530868A (ja) | 2002-09-17 |
EP1142016A1 (en) | 2001-10-10 |
SE9803883L (sv) | 2000-05-14 |
CN1156004C (zh) | 2004-06-30 |
KR100722310B1 (ko) | 2007-05-28 |
SE9803883D0 (sv) | 1998-11-13 |
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Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: ELLISON TELEPHONE CO., LTD. Effective date: 20040827 |
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CF01 | Termination of patent right due to non-payment of annual fee |
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