SE9803883L - Polykiselresistor och sätt att framställa sådan - Google Patents
Polykiselresistor och sätt att framställa sådanInfo
- Publication number
- SE9803883L SE9803883L SE9803883A SE9803883A SE9803883L SE 9803883 L SE9803883 L SE 9803883L SE 9803883 A SE9803883 A SE 9803883A SE 9803883 A SE9803883 A SE 9803883A SE 9803883 L SE9803883 L SE 9803883L
- Authority
- SE
- Sweden
- Prior art keywords
- resistor
- layers
- blocking layers
- atoms
- kinds
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9803883A SE513116C2 (sv) | 1998-11-13 | 1998-11-13 | Polykiselresistor och sätt att framställa sådan |
CNB998132470A CN1156004C (zh) | 1998-11-13 | 1999-11-15 | 多晶硅电阻器及其制造方法 |
JP2000583087A JP4731690B2 (ja) | 1998-11-13 | 1999-11-15 | ポリシリコンレジスタおよびそれを生産する方法 |
KR1020017005458A KR100722310B1 (ko) | 1998-11-13 | 1999-11-15 | 폴리실리콘 저항기 및 이것의 제조 방법 |
PCT/SE1999/002092 WO2000030176A1 (en) | 1998-11-13 | 1999-11-15 | A polysilicon resistor and a method of producing it |
AU19016/00A AU1901600A (en) | 1998-11-13 | 1999-11-15 | A polysilicon resistor and a method of producing it |
CA002350656A CA2350656A1 (en) | 1998-11-13 | 1999-11-15 | A polysilicon resistor and a method of producing it |
EP99962609A EP1142016A1 (en) | 1998-11-13 | 1999-11-15 | A polysilicon resistor and a method of producing it |
US09/503,484 US6400252B1 (en) | 1998-11-13 | 2000-02-14 | Polysilicon resistor and a method of producing it |
HK02104181.9A HK1042590A1 (zh) | 1998-11-13 | 2002-05-31 | 多晶硅電阻器及其製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9803883A SE513116C2 (sv) | 1998-11-13 | 1998-11-13 | Polykiselresistor och sätt att framställa sådan |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9803883D0 SE9803883D0 (sv) | 1998-11-13 |
SE9803883L true SE9803883L (sv) | 2000-05-14 |
SE513116C2 SE513116C2 (sv) | 2000-07-10 |
Family
ID=20413276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9803883A SE513116C2 (sv) | 1998-11-13 | 1998-11-13 | Polykiselresistor och sätt att framställa sådan |
Country Status (10)
Country | Link |
---|---|
US (1) | US6400252B1 (sv) |
EP (1) | EP1142016A1 (sv) |
JP (1) | JP4731690B2 (sv) |
KR (1) | KR100722310B1 (sv) |
CN (1) | CN1156004C (sv) |
AU (1) | AU1901600A (sv) |
CA (1) | CA2350656A1 (sv) |
HK (1) | HK1042590A1 (sv) |
SE (1) | SE513116C2 (sv) |
WO (1) | WO2000030176A1 (sv) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7439146B1 (en) * | 2000-08-30 | 2008-10-21 | Agere Systems Inc. | Field plated resistor with enhanced routing area thereover |
KR100767540B1 (ko) * | 2001-04-13 | 2007-10-17 | 후지 덴키 홀딩스 가부시끼가이샤 | 반도체 장치 |
JP2004071927A (ja) * | 2002-08-08 | 2004-03-04 | Renesas Technology Corp | 半導体装置 |
US20040070048A1 (en) * | 2002-10-15 | 2004-04-15 | Kwok Siang Ping | Providing high precision resistance in an integrated circuit using a thin film resistor of controlled dimension |
US6885280B2 (en) * | 2003-01-31 | 2005-04-26 | Fairchild Semiconductor Corporation | High value split poly p-resistor with low standard deviation |
DE10317466A1 (de) * | 2003-04-16 | 2004-12-09 | Robert Bosch Gmbh | Elektromotor |
US7112535B2 (en) * | 2003-09-30 | 2006-09-26 | International Business Machines Corporation | Precision polysilicon resistor process |
KR100587669B1 (ko) * | 2003-10-29 | 2006-06-08 | 삼성전자주식회사 | 반도체 장치에서의 저항 소자 형성방법. |
US20070096260A1 (en) * | 2005-10-28 | 2007-05-03 | International Business Machines Corporation | Reduced parasitic and high value resistor and method of manufacture |
CN100409415C (zh) * | 2005-12-06 | 2008-08-06 | 上海华虹Nec电子有限公司 | 一种在集成电路中使用α多晶硅的方法 |
US7642892B1 (en) | 2006-03-10 | 2010-01-05 | Integrated Device Technology, Inc. | Negative voltage coefficient resistor and method of manufacture |
US7855422B2 (en) * | 2006-05-31 | 2010-12-21 | Alpha & Omega Semiconductor, Ltd. | Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process |
US7691717B2 (en) | 2006-07-19 | 2010-04-06 | International Business Machines Corporation | Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof |
DE102008035808B4 (de) * | 2008-07-31 | 2015-06-03 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Halbleiterbauelement mit einem Silizium/Germanium-Widerstand |
US8054156B2 (en) * | 2008-08-26 | 2011-11-08 | Atmel Corporation | Low variation resistor |
US8395435B2 (en) * | 2009-07-30 | 2013-03-12 | Qualcomm, Incorporated | Switches with bias resistors for even voltage distribution |
JP6556556B2 (ja) | 2015-08-20 | 2019-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN106684046B (zh) * | 2015-11-11 | 2019-03-08 | 无锡华润上华科技有限公司 | 一种降低多晶高阻的氢化作用的结构、方法及半导体器件 |
JP6939497B2 (ja) * | 2017-12-13 | 2021-09-22 | 富士電機株式会社 | 抵抗素子 |
US10211830B2 (en) | 2017-04-28 | 2019-02-19 | Qualcomm Incorporated | Shunt termination path |
US10910714B2 (en) | 2017-09-11 | 2021-02-02 | Qualcomm Incorporated | Configurable power combiner and splitter |
JP7275884B2 (ja) | 2019-06-13 | 2023-05-18 | 富士電機株式会社 | 抵抗素子及びその製造方法 |
JPWO2022239719A1 (sv) * | 2021-05-10 | 2022-11-17 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1136773A (en) * | 1978-08-14 | 1982-11-30 | Norikazu Ohuchi | Semiconductor device |
US4758814A (en) * | 1985-12-02 | 1988-07-19 | Motorola, Inc. | Structure and method for wire lead attachment to a high temperature ceramic sensor |
US5241206A (en) * | 1991-07-03 | 1993-08-31 | Micron Technology, Inc. | Self-aligned vertical intrinsic resistance |
JPH0677402A (ja) * | 1992-07-02 | 1994-03-18 | Natl Semiconductor Corp <Ns> | 半導体デバイス用誘電体構造及びその製造方法 |
SE504969C2 (sv) * | 1995-09-14 | 1997-06-02 | Ericsson Telefon Ab L M | Polykiselresistor och förfarande för framställning av en sådan |
SE511816C3 (sv) * | 1996-06-17 | 2000-01-24 | Ericsson Telefon Ab L M | Resistor innefattande en resistorkropp av polykristallint kisel samt foerfarande foer framstaellning av en saadan |
-
1998
- 1998-11-13 SE SE9803883A patent/SE513116C2/sv not_active IP Right Cessation
-
1999
- 1999-11-15 WO PCT/SE1999/002092 patent/WO2000030176A1/en not_active Application Discontinuation
- 1999-11-15 KR KR1020017005458A patent/KR100722310B1/ko not_active IP Right Cessation
- 1999-11-15 EP EP99962609A patent/EP1142016A1/en not_active Withdrawn
- 1999-11-15 CA CA002350656A patent/CA2350656A1/en not_active Abandoned
- 1999-11-15 AU AU19016/00A patent/AU1901600A/en not_active Abandoned
- 1999-11-15 CN CNB998132470A patent/CN1156004C/zh not_active Expired - Fee Related
- 1999-11-15 JP JP2000583087A patent/JP4731690B2/ja not_active Expired - Fee Related
-
2000
- 2000-02-14 US US09/503,484 patent/US6400252B1/en not_active Expired - Lifetime
-
2002
- 2002-05-31 HK HK02104181.9A patent/HK1042590A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP4731690B2 (ja) | 2011-07-27 |
KR20010075671A (ko) | 2001-08-09 |
SE513116C2 (sv) | 2000-07-10 |
AU1901600A (en) | 2000-06-05 |
CN1326591A (zh) | 2001-12-12 |
HK1042590A1 (zh) | 2002-08-16 |
CA2350656A1 (en) | 2000-05-25 |
WO2000030176A1 (en) | 2000-05-25 |
US6400252B1 (en) | 2002-06-04 |
JP2002530868A (ja) | 2002-09-17 |
EP1142016A1 (en) | 2001-10-10 |
CN1156004C (zh) | 2004-06-30 |
KR100722310B1 (ko) | 2007-05-28 |
SE9803883D0 (sv) | 1998-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE9803883D0 (sv) | Polykiselresistor och sätt att framställa sådan | |
MY111221A (en) | Semiconductor electrical heater and method for making same | |
SG136795A1 (en) | Semiconductor device and manufacturing method thereof | |
JPS5720463A (en) | Semiconductor memory device | |
KR910005468A (ko) | 반도체 집적회로장치 | |
EP0994401A3 (en) | Direct-current stabilization power supply device | |
DE3480247D1 (en) | Monolithic integrated semiconductor circuit | |
DE60220394D1 (de) | Nanoelektronische bauelemente und schaltungen | |
JPS62143450A (ja) | 複合半導体装置 | |
WO2002054484A3 (en) | Metal ion diffusion barrier layers | |
WO2002056340A3 (en) | Semiconductor device with fuse, resistor, diffusion barrier or capacitor of a refractory metal-silicon-nitrogen compound | |
GB1243247A (en) | Ohmic contact and electrical interconnection system for electronic devices | |
ES2186766T3 (es) | Un elemento de resistencia electrica. | |
JPS5441087A (en) | Semiconductor integrated circuit device | |
US5227327A (en) | Method for making high impedance pull-up and pull-down input protection resistors for active integrated circuits | |
KR850005161A (ko) | 반도체 부재 및 이 부재를 사용한 반도체 장치 | |
EP0822596A3 (en) | Improvements in or relating to integrated circuits | |
KR880013257A (ko) | 반도체장치 | |
KR870009489A (ko) | 반도체장치 | |
EP0497577A3 (en) | High breakdown voltage semiconductor device | |
EP0087155A2 (en) | Means for preventing the breakdown of an insulation layer in semiconductor devices | |
EP0785576A2 (en) | Circuit including protection means | |
EP0885859A3 (en) | Member for semiconductor equipment | |
EP1184910A3 (en) | Field plated resistor with enhanced routing area thereover | |
JPS57143853A (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |